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Reza Asgari

Publications and source records attributed to Reza Asgari.

At least 91 records · Page 5Linked to original sources

Tuning quantum non-local effects in graphene plasmonics

The response of an electron system to electromagnetic fields with sharp spatial variations is strongly dependent on quantum electronic properties, even in ambient conditions, but difficult to access experimentally. We use propagating graphene plasmons, together with an engineered dielectric-metallic environment, to probe the graphene electron liquid and unveil its detailed electronic response at short wavelengths.The near-field imaging experiments reveal a parameter-free match with the full theoretical quantum description of the massless Dirac electron gas, in which we identify three types of quantum effects as keys to understanding the experimental response of graphene to short-ranged terahertz electric fields. The first type is of single-particle nature and is related to shape deformations of the Fermi surface during a plasmon oscillations. The second and third types are a many-body effect controlled by the inertia and compressibility of the interacting electron liquid in graphene. We demonstrate how, in principle, our experimental approach can determine the full spatiotemporal response of an electron system.

cond-mat.mes-hall↗

Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization

We theoretically investigate the unusual features of the magnetotransport in a monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybrid structure. We find that the charge conductance can feature a minimum at parallel (P) configuration and a maximum near the antiparallel (AP) configuration of magnetization in the F/N/F structure with $n$-doped F and $p$-doped N regions and also a finite conductance in the AP configuration with the N region of $n$-type doping. In particular, the proposed structure exhibits giant magnetoresistance, which can be tuned to unity. This perfect switching is found to show strong robustness with respect to increasing the contact length and tuning the chemical potential of the N region with a gate voltage. We also explore the oscillatory behavior of the charge conductance or magnetoresistance in terms of the size of the N region. We further demonstrate the penetration of the spin-transfer torque into the right F region and show that, unlike graphene structure, the spin-transfer torque is very sensitive to the chemical potential of the N region as well as the exchange field of the F region.

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Thermoelectric transport in monolayer phosphorene

We apply the generalized Boltzmann theory to describe thermoelectric transport properties of monolayer phosphorene in the presence of short- and long-range charged impurity interactions. First, we propose a low-energy Hamiltonian to explore the accurate electronic band structure of phosphorene in comparison with those results obtained by density-functional simulations. We explain the effect of the coupling between the conduction and valence bands on the thermoelectric properties. We show that the electric conductivity of phosphorene is highly anisotropic, while the Seebeck coefficient and figure of merit, without being influenced via either the presence or absence of the coupling term, are nearly isotropic. Furthermore, we demonstrate that the conductivity for the $n$ type of doping is more influenced by the coupling term than that of the $p$ type. Along with thermopower sign change, profound thermoelectric effects can be achieved.

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Thermoelectric effects in topological crystalline insulators

We investigate the electrical conductivity and thermoelectric effects in topological crystalline insulators in the presence of short- and long-range impurity interactions. We employ the generalized Boltzmann formalism for anisotropic Fermi surface systems. The conductivity exhibits a local minimum as doping varies owing to the Van Hove singularity in the density of states originated from the saddle point in the surface states band structure. Suppression of the interband scattering of the charge carriers at high-energy Dirac points results in a maximum in the electrical conductivity. Whenever the Fermi level passes an extremum in the conductivity, Seebeck coefficient changes sign. In addition, it is revealed that profound thermoelectric effects can be attained around these extrema points.

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Edge modes in zigzag and armchair ribbons of monolayer MoS$_2$

We explore the electronic structure, orbital character and topological aspect of a monolayer MoS$_2$ nanoribbon using tight-binding (TB) and low-energy (${\bm k}\cdot{\bm p} $) models. We obtain a mid-gap edge mode in the zigzag ribbon of monolayer MoS$_2$, which can be traced back to the topological properties of the bulk band structure. Monolayer MoS$_2$ can be considered as a valley Hall insulator. The boundary conditions at armchair edges mix the valleys on the edges, and a gap is induced in the edge modes. The spin-orbit coupling in the valence band reduces the hybridization of the bulk states.

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Electronic Cooling via Interlayer Coulomb Coupling in Multilayer Epitaxial Graphene

In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied.

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Topological phase and edge states dependence of the RKKY interaction in zigzag silicene nanoribbon

We propose versatile materials based on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction in a zigzag silicene nanoribbon (ZSNR) on half filling in the presence of an out-of-plane electric field. We show that the topological phase transition in the band dispersion of ZSNR can be probed by using the RKKY interaction. We find that, due to the zero-energy edge states of the ZSNR, the exchange coupling is significantly enhanced when the impurities are located on the zigzag edges, and also explore that the strength of the interaction in the topological insulator phase is much greater than that when the system is in the band insulator region. We present a model to investigate the phase of a system of two magnetic impurities located on the edge of the ZSNR and find that three different magnetic phases, spiral, ferromagnetic, and anti-ferromagnetic, are possible for different values of the electric field. This electrical tunability of the magnetic phases in silicene can be explored by using current experimental techniques and can be of interest in the field of spintronics.

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Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers

We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenides monolayers. We show that momentum and spin relaxation times due to the exchange interaction by magnetic impurities, are much longer when the Fermi level is inside the spin split region of the valence band. In contrast to the spin relaxation, we find that the dependence of Kondo temperature $T_K$ on the doping is not strongly affected by the spin-orbit induced splitting, although only one of the spin species are present at each valley. This result, which is obtained using both perturbation theory and poor man's scaling methods, originates from the intervalley spin-flip scattering in the spin-split region. We further demonstrate the decline in the conductivity with temperatures close to $T_K$ which can vary with the doping. Our findings reveal the qualitative difference with the Kondo physics in conventional metallic systems and other Dirac materials.

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Relaxation times and charge conductivity of silicene

We investigate the transport and single particle relaxation times of silicene in the presence of neutral and charged impurities. The static charge conductivity is studied using the semiclassical Boltzmann formalism when the spin-orbit interaction is taken into account. The screening is modeled within Thomas-Fermi and random phase approximations. We show that the transport relaxation time is always longer than the single particle one. Easy electrical controllability of both carrier density and band gap in this buckled two-dimensional structure makes it a suitable candidate for several electronic and optoelectronic applications. In particular, we observe that the dc charge conductivity could be easily controlled through an external electric field, a very promising feature for applications as electrical switches and transistors. Our findings would be qualitatively valid for other buckled honeycomb lattices of the same family, such as germanine and stanine.

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Excitons and optical spectra of phosphorene nanoribbons

On the basis of many-body {\it ab-initio} calculations, using single-shot G$_0$W$_0$ method and Bethe-Salpeter equation, we study phosphorene nanoribbons (PNRs) in the two typical zigzag and armchair directions. The electronic structure, optical absorption, electron-hole (exciton) binding energy, exciton exchange splitting, and exciton wave functions are calculated for different size of PNRs. The typically strong splitting between singlet and triplet excitonic states make PNRs favorable systems for application in optoelectronic. Quantum confinement occurs in both kinds of PNRs, and it is stronger in the zPNRs, as behave like quasi-zero-dimensional systems. Scaling laws are investigated for the size-dependent behaviors of PNRs. The first bright excitonic state in PNRs is explored in detail.

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Specular Andreev reflection in thin films of topological insulators

We theoretically reveal the possibility of specular Andreev reflection in a thin film topological insulator normal-superconductor (N/S) junction in the presence of a gate electric field. The probability of specular Andreev reflection increases with the electric field, and electron-hole conversion with unit efficiency happens in a wide experimentally accessible range of the electric field. We show that perfect specular Andreev reflection can occur for all angles of incidence with a particular excitation energy value. In addition, we find that the thermal conductance of the structure displays exponential dependence on the temperature. Our results reveal the potential of the proposed topological insulator thin-film-based N/S structure for the realization of intraband specular Andreev reflection.

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Orbital magnetic susceptibility of graphene and MoS2

We calculate the orbital magnetic susceptibility $χ_{\mathrm{orb}}$ for an 8-band tight-binding model of gapless and gapped graphene using Green's functions. Analogously, we study $χ_{\mathrm{orb}}$ for a $\mathrm{MoS_2}$ 12-band model. For both materials, we unravel the character of the processes involved in the magnetic response by looking at the contribution at each point of the Brillouin zone. By this, a clear distinction between intra- and interband excitations is generally possible and we are able to predict qualitative features of $χ_{\mathrm{orb}}$ only through the knowledge of the band structure. The study is complemented by comparing the magnetic response with that of 2-band lattice Hamiltonians which reduce to the Dirac and Bernevig-Hughes-Zhang (BHZ) models in the continuum limit.

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Theory of strain in single-layer transition metal dichalcogenides

Strain engineering has emerged as a powerful tool to modify the optical and electronic properties of two-dimensional crystals. Here we perform a systematic study of strained semiconducting transition metal dichalcogenides. The effect of strain is considered within a full Slater-Koster tight-binding model, which provides us with the band structure in the whole Brillouin zone. From this, we derive an effective low-energy model valid around the K point of the BZ, which includes terms up to second order in momentum and strain. For a generic profile of strain, we show that the solutions for this model can be expressed in terms of the harmonic oscillator and double quantum well models, for the valence and conduction bands respectively. We further study the shift of the position of the electron and hole band edges due to uniform strain. Finally, we discuss the importance of spin-strain coupling in these 2D semiconducting materials.

cond-mat.mtrl-sci↗

Quasiparticle Mass Enhancement and Fermi Surface Shape Modification in Oxide Two-Dimensional Electron Gases

We propose a model intended to qualitatively capture the electron-electron interaction physics of two-dimensional electron gases formed near transition-metal oxide heterojunctions containing $t_{2g}$ electrons with a density much smaller than one electron per metal atom. Two-dimensional electron systems of this type can be described perturbatively using a $GW$ approximation which predicts that Coulomb interactions enhance quasiparticle effective masses more strongly than in simple two-dimensional electron gases, and that they reshape the Fermi surface, reducing its anisotropy.

cond-mat.str-el↗

Charge compressibility and quantum magnetic phase transition in MoS$_2$

We investigate the ground-state properties of monolayer MoS$_2$ incorporating the Coulomb interaction together with a short-range intervalley interaction between charged particles between two valleys within the Hartree-Fock approximation. We consider four variables as independent parameters, namely homogeneous charge (electron or hole) density, averaged dielectric constant, spin degree of freedom and finally the Hubbard repulsion coefficient which originates mostly from $4d$ orbits of Mo atoms. We find the electronic charge compressibility within the mean-field approximation and show that non-monotonic behavior of the compressibility as a function of carrier density which is rather different from those of the two-dimensional electron gas. We also explore a paramagnetic-to-ferromagnetic quantum phase transition for the wide range of the electron density in the parameter space.

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Modulation of electronic and mechanical properties of phosphorene through strain

We report a first-principles study on the elastic, vibrational, and electronic properties of recently synthesized phosphorene. By calculating Grüneisen parameters, we evaluate the frequency shift of Raman/infrared active modes via symmetric biaxial strain. We also study an inducing semiconductor-metal transition, the gap size, and effective mass of carriers in various strain configurations. Furthermore, we unfold the emergence of a peculiar Dirac-shaped dispersion for specific strain conditions, including the zigzag-oriented tensile strain. The observed linear energy spectrum has distinct velocities corresponding to each of its linear branches and is limited to the $Γ-X$ direction in the first Brillouin zone.

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Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS$_2$ in a perpendicular magnetic field

We study the effect of a perpendicular magnetic field on the electronic structure and charge transport of a monolayer MoS$_2$ nanoribbon at zero temperature. We particularly explore the induced valley Zeeman effect through the coupling between the magnetic field, $B$, and the orbital magnetic moment. We show that the effective two-band Hamiltonian provides a mismatch between the valley Zeeman coupling in the conduction and valence bands due to the effective mass asymmetry and it is proportional to $B^2$ similar to the diamagnetic shift of exciton binding energies. However, the dominant term which evolves with $B$ linearly, originates from the multi-orbital and multi-band structures of the system. Besides, we investigate the transport properties of the system by calculating the spin-valley resolved conductance and show that, in a low-hole doped case, the transport channels at the edge are chiral for one of the spin components. This leads to a localization of the non-chiral spin component in the presence of disorder and thus provides a spin-valley polarized transport induced by disorder.

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Quantum phases of a one-dimensional dipolar Fermi gas

We quantitatively obtain the quantum ground-state phases of a Fermi system with on-site and dipole-dipole interactions in one-dimensional lattice chains within the density matrix renormalization group. We show, at a given spin polarization, the existence of six phases in the phase diagram and find that the phases are highly dependent on the spin degree of freedom. These phases can be constructed using available experimental techniques.

cond-mat.str-el↗