arXiv subjects

Riccardo Tomasello

Publications and source records attributed to Riccardo Tomasello.

40 records · Page 3Linked to original sources

arXiv2017

Description of statistical switching in perpendicular STT-MRAM within an analytical and numerical micromagnetic framework

The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an analytical formulation that takes into account the spin-torque asymmetry of the spin polarization function of magnetic tunnel junctions studying. We studied its validity range by comparing the analytical formulas with results achieved numerically within a full micromagnetic framework. We also find that a reasonable fit of the probability density function (PDF) of the switching time is given by a Pearson Type IV PDF. The main results of this work underlines the need of data-driven design of STT-MRAM that uses a full micromagnetic simulation framework for the statistical proprieties PDF of switching processes.

cond-mat.mes-hall↗

arXiv2015

Topological, non topological and instanton droplets driven by spin-transfer torque in materials with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya Interaction

The interfacial Dzyaloshinskii-Moriya Interaction can modify the topology of droplets excited by a localized spin-polarized current. Here, we show that, in addition to the stationary droplet excitations with skyrmion number either one (topological) or zero (non-topological), there exists, for a fixed current, an excited mode with a non-stationary time behavior. We call this mode "instanton droplet", which is characterized by time domain transitions of the skyrmion number. These transitions are coupled to an emission of incoherent spin-waves that can be observed in the frequency domain as a source of noise. Our results are interesting from a fundamental point of view to study spin-wave emissions due to a topological transition in current-driven systems, and could open the route for experiments based on magnetoresistance effect for the design of a further generation of nanoscale microwave oscillators.

cond-mat.mtrl-sci↗

arXiv2014

Intrinsic synchronization of an array of spin-torque oscillators driven by the spin-Hall effect

This paper micromagnetically studies the magnetization dynamics driven by the spin-Hall effect in a Platinum/Permalloy bi-layer. For a certain field and current range, the excitation of a uniform mode, characterized by a power with a spatial distribution in the whole ferromagnetic cross section, is observed. We suggest to use the ferromagnet of the bi-layer as basis for the realization of an array of spin-torque oscillators (STOs): the Permalloy ferromagnet will act as shared free layer, whereas the spacers and the polarizers are built on top of it. Following this strategy, the frequency of the uniform mode will be the same for the whole device, creating an intrinsic synchronization. The synchronization of an array of parallely connected STOs will allow to increase the output power, as necessary for technological applications.

cond-mat.mtrl-sci↗

arXiv2014

Switching Properties in Magnetic Tunnel Junctions with Interfacial Perpendicular Anisotropy: Micromagnetic Study

The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density maintaining the thermal stability) has been achieved in MTJs with interfacial perpendicular anisotropy (IPA) at the interface between CoFeB and MgO. In this paper, micromagnetic simulations point out the influence of IPA and saturation magnetization (MS) on the properties of fast magnetization reversal achieved in 5, 10 and 20 ns. Both cases of in-plane and out-of-plane free layer are considered. In addition, the thermal effect is included for the in-plane switching at 20 ns and a complete analysis of energy dissipation during the switching is illustrated. This study can provide useful information for the design of STT-based memories.

cond-mat.mes-hall↗