arXiv subjects

Richard J. Warburton

Publications and source records attributed to Richard J. Warburton.

At least 55 records · Page 3Linked to original sources

arXiv2020

Statistically Modeling Optical Linewidths of Nitrogen Vacancy Centers in Post-Implanted Nanostructures

We investigate the effects of a novel approach to diamond nanofabrication and nitrogen vacancy (NV) center formation on the optical linewidth of the NV zero-phonon line (ZPL). In this post-implantation method, nitrogen is implanted after all fabrication processes have been completed. We examine three post-implanted samples, one implanted with $^{14}$N and two with $^{15}$N isotopes. We perform photoluminescence excitation (PLE) spectroscopy to assess optical linewidths and optically detected magnetic resonance (ODMR) measurements to isotopically classify the NV centers. From this, we find that NV centers formed from nitrogen naturally occuring in the diamond lattice are characterized by a linewidth distribution peaked at an optical linewidth nearly two orders of magnitude smaller than the distribution characterizing most of the NV centers formed from implanted nitrogen. Surprisingly, we also observe a number of $^{15}$NV centers with narrow ($<500\,\mathrm{MHz}$) linewidths, implying that implanted nitrogen can yield NV centers with narrow optical linewidths. We further use a Bayesian approach to statistically model the linewidth distributions, to accurately quantify the uncertainty of fit parameters in our model, and to predict future linewidths within a particular sample. Our model is designed to aid comparisons between samples and research groups, in order to determine the best methods of achieving narrow NV linewidths in structured samples.

cond-mat.mes-hall↗

arXiv2020

Large-Range Frequency Tuning of a Narrow-Linewidth Quantum Emitter

A hybrid system of a semiconductor quantum dot single photon source and a rubidium quantum memory represents a promising architecture for future photonic quantum repeaters. One of the key challenges lies in matching the emission frequency of quantum dots with the transition frequency of rubidium atoms while preserving the relevant emission properties. Here, we demonstrate the bidirectional frequency-tuning of the emission from a narrow-linewidth (close-to-transform-limited) quantum dot. The frequency tuning is based on a piezoelectric strain-amplification device, which can apply significant stress to thick bulk samples. The induced strain shifts the emission frequency of the quantum dot over a total range of $1.15\ \text{THz}$, about three orders of magnitude larger than its linewidth. Throughout the whole tuning process, both the spectral properties of the quantum dot and its single-photon emission characteristics are preserved. Our results show that external stress can be used as a promising tool for reversible frequency tuning of high-quality quantum dots and pave the wave towards the realisation of a quantum dot -- rubidium atoms interface for quantum networking.

cond-mat.mes-hall↗

arXiv2020

Silicon quantum dot devices with a self-aligned second gate layer

We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is dominated by spin-orbit interaction, and enable us to determine the effective hole $g$-factor $\simeq1.6$. From an avoided singlet-triplet crossing, occurring at high magnetic field, the spin-orbit coupling strength $\simeq0.27$meV is obtained, promising fast and all-electrical spin control.

cond-mat.mes-hall↗

arXiv2020

A bright and fast source of coherent single photons

A single photon source is a key enabling technology in device-independent quantum communication, quantum simulation for instance boson sampling, linear optics-based and measurement-based quantum computing. These applications involve many photons and therefore place stringent requirements on the efficiency of single photon creation. The scaling on efficiency is an exponential function of the number of photons. Schemes taking full advantage of quantum superpositions also depend sensitively on the coherence of the photons, i.e. their indistinguishability. It is therefore crucial to maintain the coherence over long strings of photons. Here, we report a single photon source with an especially high system efficiency: a photon is created on-demand at the output of the final optical fibre with a probability of 57%. The coherence of the photons is very high and is maintained over a stream consisting of thousands of photons; the repetition rate is in the GHz regime. We break with the established semiconductor paradigms, such as micropillars, photonic crystal cavities and waveguides. Instead, we employ gated quantum dots in an open, tunable microcavity. The gating ensures low-noise operation; the tunability compensates for the lack of control in quantum dot position and emission frequency; the output is very well-matched to a single-mode fibre. An increase in efficiency over the state-of-the-art by more than a factor of two, as reported here, will result in an enormous decrease in run-times, by a factor of $10^{7}$ for 20 photons.

quant-ph↗

arXiv2020

Near Transform-limited Quantum Dot Linewidths in a Broadband Photonic Crystal Waveguide

Planar nanophotonic structures enable broadband, near-unity coupling of emission from quantum dots embedded within, thereby realizing ideal singe-photon sources. The efficiency and coherence of the single-photon source is limited by charge noise, which results in the broadening of the emission spectrum.We report suppression of the noise by fabricating photonic crystal waveguides in a gallium arsenide membrane containing quantum dots embedded in a $p$-$i$-$n$ diode. Local electrical contacts in the vicinity of the waveguides minimize the leakage current and allow fast electrical control ($\approx$4 MHz bandwidth) of the quantum dot resonances. Resonant linewidth measurements of $79$ quantum dots coupled to the photonic crystal waveguides exhibit near transform-limited emission over a 6 nm wide range of emission wavelengths. Importantly, the local electrical contacts allow independent tuning of multiple quantum dots on the same chip, which together with the transform-limited emission are key components in realizing multiemitter-based quantum information processing.

quant-ph↗

arXiv2020

On-chip deterministic operation of quantum dots in dual-mode waveguides for a plug-and-play single-photon source

A deterministic source of coherent single photons is an enabling device of quantum-information processing for quantum simulators, and ultimately a full-fledged quantum internet. Quantum dots (QDs) in nanophotonic structures have been employed as excellent sources of single photons, and planar waveguides are well suited for scaling up to multiple photons and emitters exploring near-unity photon-emitter coupling and advanced active on-chip functionalities. An ideal single-photon source requires suppressing noise and decoherence, which notably has been demonstrated in electrically-contacted heterostructures. It remains a challenge to implement deterministic resonant excitation of the QD required for generating coherent single photons, since residual light from the excitation laser should be suppressed without compromising source efficiency and scalability. Here, we present the design and realization of a novel planar nanophotonic device that enables deterministic pulsed resonant excitation of QDs through the waveguide. Through nanostructure engineering, the excitation light and collected photons are guided in two orthogonal waveguide modes enabling deterministic operation. We demonstrate a coherent single-photon source that simultaneously achieves high-purity ($g^{(2)}(0)$ = 0.020 $\pm$ 0.005), high-indistinguishability ($V$ = 96 $\pm$ 2 %), and $>$80 % coupling efficiency into the waveguide. The novel `plug-and-play' coherent single-photon source could be operated unmanned for several days and will find immediate applications, e.g., for constructing heralded multi-photon entanglement sources for photonic quantum computing or sensing.

quant-ph↗

arXiv2020

Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition

Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers, where both holes and electrons are confined to the individual layers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about $t_\perp=49$ meV. Obtaining very similar results for as-grown and artificially stacked bilayers is promising for assembling large area van der Waals structures with CVD material, using interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments.

cond-mat.mtrl-sci↗

arXiv2019

Correlations between Optical Properties and Voronoi-Cell Area of Quantum Dots

A semiconductor quantum dot (QD) can generate highly indistinguishable single-photons at a high rate. For application in quantum communication and integration in hybrid systems, control of the QD optical properties is essential. Understanding the connection between the optical properties of a QD and the growth process is therefore important. Here, we show for GaAs QDs, grown by infilling droplet-etched nano-holes, that the emission wavelength, the neutral-to-charged exciton splitting, and the diamagnetic shift are strongly correlated with the capture zone-area, an important concept from nucleation theory. We show that the capture-zone model applies to the growth of this system even in the limit of a low QD-density in which atoms diffuse over $μ$m-distances. The strong correlations between the various QD parameters facilitate preselection of QDs for applications with specific requirements on the QD properties; they also suggest that a spectrally narrowed QD distribution will result if QD growth on a regular lattice can be achieved.

cond-mat.mes-hall↗

arXiv2019

Cavity-enhanced Raman scattering for in situ alignment and characterization of solid-state microcavities

We report cavity-enhanced Raman scattering from a single-crystal diamond membrane embedded in a highly miniaturized fully-tunable Fabry-Pérot cavity. The Raman intensity is enhanced 58.8-fold compared to the corresponding confocal measurement. The strong signal amplification results from the Purcell effect. We show that the cavity-enhanced Raman scattering can be harnessed as a narrowband, high-intensity, internal light-source. The Raman process can be triggered in a simple way by using an optical excitation frequency outside the cavity stopband and is independent of the lateral positioning of the cavity mode with respect to the diamond membrane. The strong Raman signal emerging from the cavity output facilitates in situ mode-matching of the cavity mode to single-mode collection optics; it also represents a simple way of measuring the dispersion and spatial intensity-profile of the cavity modes. The optimization of the cavity performance via the strong Raman process is extremely helpful in achieving efficient cavity-outcoupling of the relatively weak emission of single color-centers such as nitrogen-vacancy centers in diamond or rare-earth ions in crystalline hosts with low emitter density.

quant-ph↗

arXiv2019

Intrinsically-limited timing jitter in molybdenum silicide superconducting nanowire single-photon detectors

Recent progress in the development of superconducting nanowire single-photon detectors (SNSPDs) has delivered excellent performances, and has had a great impact on a range of research fields. The timing jitter, which denotes the temporal resolution of the detection, is a crucial parameter for many applications. Despite extensive work since their apparition, the lowest jitter achievable with SNSPDs is still not clear, and the origin of the intrinsic limits is not fully understood. Understanding its intrinsic behaviour and limits is a mandatory step toward improvements. Here, we report our experimental study on the intrinsically-limited timing jitter in molybdenum silicide (MoSi) SNSPDs. We show that to reach intrinsic jitter, several detector properties such as the latching current and the kinetic inductance of the devices have to be understood. The dependence on the nanowire cross-section and the energy dependence of the intrinsic jitter are exhibited, and the origin of the limits are explicited. System timing jitter of 6.0 ps at 532 nm and 10.6 ps at 1550 nm photon wavelength have been obtained.

physics.ins-det↗

arXiv2018

A gated quantum dot far in the strong-coupling regime of cavity-QED at optical frequencies

The strong-coupling regime of cavity-quantum-electrodynamics (cQED) represents light-matter interaction at the fully quantum level. Adding a single photon shifts the resonance frequencies, a profound nonlinearity. cQED is a test-bed of quantum optics and the basis of photon-photon and atom-atom entangling gates. At microwave frequencies, success in cQED has had a transformative effect. At optical frequencies, the gates are potentially much faster and the photons can propagate over long distances and be easily detected, ideal features for quantum networks. Following pioneering work on single atoms, solid-state implementations are important for developing practicable quantum technology. Here, we embed a semiconductor quantum dot in a microcavity. The microcavity has a $\mathcal{Q}$-factor close to $10^{6}$ and contains a charge-tunable quantum dot with close-to-transform-limited optical linewidth. The exciton-photon coupling rate $g$ exceeds both the photon decay rate $κ$ and exciton decay rate $γ$ by a large margin ($g/γ=14$, $g/κ=5.3$); the cooperativity is $C=2g^{2}/(γκ)=150$, the $β$-factor 99.7%. We observe pronounced vacuum Rabi oscillations in the time-domain, photon blockade at a one-photon resonance, and highly bunched photon statistics at a two-photon resonance. We use the change in photon statistics as a sensitive spectral probe of transitions between the first and second rungs of the Jaynes-Cummings ladder. All experiments can be described quantitatively with the Jaynes-Cummings model despite the complexity of the solid-state environment. We propose this system as a platform to develop optical-cQED for quantum technology, for instance a photon-photon entangling gate.

quant-ph↗

arXiv2018

Excitons in InGaAs Quantum Dots without Electron Wetting Layer States

The Stranski-Krastanov (SK) growth-mode facilitates the self-assembly of quantum dots (QDs) using lattice-mismatched semiconductors, for instance InAs and GaAs. SK QDs are defect-free and can be embedded in heterostructures and nano-engineered devices. InAs QDs are excellent photon emitters: QD-excitons, electron-hole bound pairs, are exploited as emitters of high quality single photons for quantum communication. One significant drawback of the SK-mode is the wetting layer (WL). The WL results in a continuum rather close in energy to the QD-confined-states. The WL-states lead to unwanted scattering and dephasing processes of QD-excitons. Here, we report that a slight modification to the SK-growth-protocol of InAs on GaAs -- we add a monolayer of AlAs following InAs QD formation -- results in a radical change to the QD-excitons. Extensive characterisation demonstrates that this additional layer eliminates the WL-continuum for electrons enabling the creation of highly charged excitons where up to six electrons occupy the same QD. Single QDs grown with this protocol exhibit optical linewidths matching those of the very best SK QDs making them an attractive alternative to standard InGaAs QDs.

cond-mat.mes-hall↗

arXiv2018

Optical second harmonic generation in encapsulated single-layer InSe

We report the observation of optical second harmonic generation (SHG) in single-layer indium selenide (InSe). We measure a second harmonic signal of $>10^3$ $\textrm{cts/s}$ under nonresonant excitation using a home-built confocal microscope and a standard pulsed pico-second laser. We demonstrate that polarization-resolved SHG serves as a fast, non-invasive tool to determine the crystal axes in single-layer InSe and to relate the sharp edges of the flake to the armchair and zigzag edges of the crystal structure. Our experiment determines these angles to an accuracy better than $\pm$ $0.2^{\circ}$. Treating the two-dimensional material as a nonlinear polarizable sheet, we determine a second-order nonlinear sheet polarizability $| χ_{\textrm{sheet}}^{(2)}|=(17.9 \pm 11.0)\times 10^{-20}$ $\textrm{m}^2 \textrm{V}^{-1}$ for single-layer InSe, corresponding to an effective nonlinear susceptibility value of $| χ_\textrm{eff}^{(2)}| \approx (223 \pm 138) \times 10^{-12}$ $\textrm{m} \textrm{V}^{-1}$ accounting for the sheet thickness ($\textrm{d} \approx 0.8$ $\textrm{nm}$). We demonstrate that the SHG technique can also be applied to encapsulated samples to probe their crystal orientations. The method is therefore suitable for creating high quality van der Waals heterostructures with control over the crystal directions.

physics.optics↗

arXiv2018

Spin-Polarized Electrons in Monolayer MoS$_2$

The optical susceptibility is a local, minimally-invasive and spin-selective probe of the ground state of a two-dimensional electron gas. We apply this probe to a gated monolayer of MoS$_2$. We demonstrate that the electrons are spin polarized. Of the four available bands, only two are occupied. These two bands have the same spin but different valley quantum numbers. We argue that strong Coulomb interactions are a key aspect of this spontaneous symmetry breaking. The Bohr radius is so small that even electrons located far apart in phase space interact, facilitating exchange couplings to align the spins.

cond-mat.mes-hall↗

arXiv2018

Quantum optics with near lifetime-limited quantum-dot transitions in a nanophotonic waveguide

Establishing a highly efficient photon-emitter interface where the intrinsic linewidth broadening is limited solely by spontaneous emission is a key step in quantum optics. It opens a pathway to coherent light-matter interaction for, e.g., the generation of highly indistinguishable photons, few-photon optical nonlinearities, and photon-emitter quantum gates. However, residual broadening mechanisms are ubiquitous and need to be combated. For solid-state emitters charge and nuclear spin noise is of importance and the influence of photonic nanostructures on the broadening has not been clarified. We present near lifetime-limited linewidths for quantum dots embedded in nanophotonic waveguides through a resonant transmission experiment. It is found that the scattering of single photons from the quantum dot can be obtained with an extinction of $66 \pm 4 \%$, which is limited by the coupling of the quantum dot to the nanostructure rather than the linewidth broadening. This is obtained by embedding the quantum dot in an electrically-contacted nanophotonic membrane. A clear pathway to obtaining even larger single-photon extinction is laid out, i.e., the approach enables a fully deterministic and coherent photon-emitter interface in the solid state that is operated at optical frequencies.

quant-ph↗

arXiv2018

High-detection efficiency and low-timing jitter with amorphous superconducting nanowire single-photon detectors

Recent progress in the development of superconducting nanowire single-photon detectors (SNSPDs) made of amorphous material has delivered excellent performances, and has had a great impact on a range of research fields. Despite showing the highest system detection efficiency (SDE) ever reported with SNSPDs, amorphous materials typically lead to lower critical currents, which impacts on their jitter performance. Combining a very low jitter and a high SDE remains a challenge. Here, we report on highly efficient superconducting nanowire single-photon detectors based on amorphous MoSi, combining system jitters as low as 26 ps and a SDE of 80% at 1550 nm. We also report detailed observations on the jitter behaviour, which hints at intrinsic limitations and leads to practical implications for SNSPD performance.

quant-ph↗

arXiv2017

Quantum confined Stark effect in a MoS$_2$ monolayer van der Waals heterostructure

The optics of dangling-bond-free van der Waals heterostructures containing transition metal dichalcogenides are dominated by excitons. A crucial property of a confined exciton is the quantum confined Stark effect (QCSE). Here, such a heterostructure is used to probe the QCSE by applying a uniform vertical electric field across a molybdenum disulfide (MoS$_2$) monolayer. The photoluminescence emission energies of the neutral and charged excitons shift quadratically with the applied electric field provided the electron density remains constant, demonstrating that the exciton can be polarized. Stark shifts corresponding to about half the homogeneous linewidth were achieved. Neutral and charged exciton polarizabilities of $(7.8~\pm~1.0)\times 10^{-10}~\tr{D~m~V}^{-1}$ and $(6.4~\pm~0.9)\times 10^{-10}~\tr{D~m~V}^{-1}$ at relatively low electron density ($8 \times 10^{11}~\tr{cm}^{-2}$) have been extracted, respectively. These values are one order of magnitude lower than the previously reported values, but in line with theoretical calculations. The methodology presented here is versatile and can be applied to other semiconducting layered materials as well.

cond-mat.mes-hall↗

arXiv2017

On-demand semiconductor source of 780 nm single photons with controlled temporal wave packets

We report on a fast, bandwidth-tunable single-photon source based on an epitaxial GaAs quantum dot. Exploiting spontaneous spin-flip Raman transitions, single photons at $780\,$nm are generated on-demand with tailored temporal profiles of durations exceeding the intrinsic quantum dot lifetime by up to three orders of magnitude. Second-order correlation measurements show a low multi-photon emission probability ($g^{2}(0)\sim\,0.10-0.15$) at a generation rate up to $10\,$MHz. We observe Raman photons with linewidths as low as $200\,$MHz, narrow compared to the $1.1\,$GHz linewidth measured in resonance fluorescence. The generation of such narrow-band single photons with controlled temporal shapes at the rubidium wavelength is a crucial step towards the development of an optimized hybrid semiconductor-atom interface.

quant-ph↗