arXiv subjects

Richard J. Warburton

Publications and source records attributed to Richard J. Warburton.

At least 37 records · Page 2Linked to original sources

arXiv2023

A hole spin qubit in a fin field-effect transistor above 4 kelvin

The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allows the quantum hardware and its classical control electronics to be integrated on the same chip. However, this requires qubit operation at temperatures above 1K, where the cooling overcomes heat dissipation. Here, we show that silicon FinFETs can host spin qubits operating above 4K. We achieve fast electrical control of hole spins with driving frequencies up to 150MHz, single-qubit gate fidelities at the fault-tolerance threshold, and a Rabi oscillation quality factor greater than 87. Our devices feature both industry compatibility and quality, and are fabricated in a flexible and agile way that should accelerate further development.

cond-mat.mes-hall↗

arXiv2023

Cavity-enhanced excitation of a quantum dot in the picosecond regime

A major challenge in generating single photons with a single emitter is to excite the emitter while avoiding laser leakage into the collection path. Ideally, any scheme to suppress this leakage should not result in a loss in efficiency of the single-photon source. Here, we investigate a scheme in which a single emitter, a semiconductor quantum dot, is embedded in a microcavity. The scheme exploits the splitting of the cavity mode into two orthogonally-polarised modes: one mode is used for excitation, the other for collection. By linking experiment to theory, we show that the best population inversion is achieved with a laser pulse detuned from the quantum emitter. The Rabi oscillations have an unusual dependence on pulse power. Our theory describes them quantitatively allowing us to determine the absolute photon creation probability. For the optimal laser detuning, the population innversion is 98\%. The Rabi oscillations depend on the sign of the laser-pulse detuning. We show that this arises from the non-trivial effect of phonons on the exciton dynamics. The exciton-phonon interaction is included in the theory and gives excellent agreement with all the experimental results.

quant-ph↗

arXiv2022

A compact and versatile cryogenic probe station for quantum device testing

Fast feedback from cryogenic electrical characterization measurements is key for the development of scalable quantum computing technology. At room temperature, high-throughput device testing is accomplished with a probe-based solution, where electrical probes are repeatedly positioned onto devices for acquiring statistical data. In this work we present a probe station that can be operated from room temperature down to below 2$\,$K. Its small size makes it compatible with standard cryogenic measurement setups with a magnet. A large variety of electronic devices can be tested. Here, we demonstrate the performance of the prober by characterizing silicon fin field-effect transistors as a host for quantum dot spin qubits. Such a tool can massively accelerate the design-fabrication-measurement cycle and provide important feedback for process optimization towards building scalable quantum circuits.

cond-mat.mes-hall↗

arXiv2022

Two-qubit logic with anisotropic exchange in a fin field-effect transistor

Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and nuclear spin noise. The demonstration of a two-qubit quantum gate in a silicon fin field-effect transistor, that is, the workhorse device of today's semiconductor industry, has remained an open challenge. Here, we demonstrate a controlled rotation two-qubit gate on hole spins in an industry-compatible device. A short gate time of 24 ns is achieved. The quantum logic exploits an exchange interaction that can be tuned from above 500 MHz to close-to-off. Significantly, the exchange is strikingly anisotropic. By developing a general theory, we show that the anisotropy arises as a consequence of a strong spin-orbit interaction. Upon tunnelling from one quantum dot to the other, the spin is rotated by almost 90 degrees. The exchange Hamiltonian no longer has Heisenberg form and is engineered in such a way that there is no trade-off between speed and fidelity of the two-qubit gate. This ideal behaviour applies over a wide range of magnetic field orientations rendering the concept robust with respect to variations from qubit to qubit. Our work brings hole spin qubits in silicon transistors a step closer to the realization of a large-scale quantum computer.

cond-mat.mes-hall↗

arXiv2022

Structural symmetry-breaking to explain radiative Auger transitions in self-assembled quantum dots

The optical spectrum of a quantum dot is typically dominated by the fundamental transition between the lowest-energy configurations. However, the radiative Auger process can result in additional red-shifted emission lines. The origin of these lines is a combination of Coulomb interaction and symmetry-breaking in the quantum dot. In this paper, we present measurements of such radiative Auger lines for a range of InGaAs/GaAs self-assembled quantum dots and use a tight-binding model with a configuration interaction approach to explain their appearance. Introducing a composition fluctuation cluster in the dot, our calculations show excellent agreement with measurements. We relate our findings to group theory explaining the origin of the additional emission lines. Our model and results give insight into the interplay between the symmetry breaking in a quantum dot and the position and strength of the radiative Auger lines.

cond-mat.mes-hall↗

arXiv2022

Direct observation of photon bound states using a single artificial atom

The interaction between photons and a single two-level atom constitutes a fundamental paradigm in quantum physics. The nonlinearity provided by the atom means that the light-matter interaction depends strongly on the number of photons interacting with the two-level system within its emission lifetime. This nonlinearity results in the unveiling of strongly correlated quasi-particles known as photon bound states, giving rise to key physical processes such as stimulated emission and soliton propagation. While signatures consistent with the existence of photon bound states have been measured in strongly interacting Rydberg gases, their hallmark excitation-number-dependent dispersion and propagation velocity have not yet been observed. Here, we report the direct observation of a photon-number-dependent time delay in the scattering off a single semiconductor quantum dot coupled to an optical cavity. By scattering a weak coherent pulse off the cavity-QED system and measuring the time-dependent output power and correlation functions, we show that single photons, and two- and three-photon bound states incur different time delays of 144.02\,ps, 66.45\,ps and 45.51\,ps respectively. The reduced time delay of the two-photon bound state is a fingerprint of the celebrated example of stimulated emission, where the arrival of two photons within the lifetime of an emitter causes one photon to stimulate the emission of the other from the atom.

quant-ph↗

arXiv2021

Widely-tunable, doubly-resonant Raman scattering on diamond in an open microcavity

Raman lasers based on bulk diamond are a valuable resource for generating coherent light in wavelength regimes where no common laser diodes are available. Nevertheless, the widespread use of such lasers is limited by their high threshold power requirements on the order of several Watts. Using on-chip microresonators, a significant reduction of the lasing threshold by more than two orders of magnitude has been shown. However, these resonators lack a continuous tuning mechanism and, mainly due to fabrication limitations, their implementation in the visible remains elusive. Here, we propose a platform for a diamond Raman laser in the visible. The device is based on a miniaturized, open-access Fabry-Perot cavity. Our microcavity provides widely-tunable doubly-resonant enhancement of Raman scattering from high quality single-crystalline diamond. We demonstrate a $>$THz continuous tuning range of doubly-resonant Raman scattering, a range limited only by the reflective stopband of the mirrors. Based on the experimentally determined quality factors exceeding $300\,000$, our theoretical analysis suggests that, with realistic improvements, a sub-mW threshold is readily within reach. Our findings pave the way to the creation of a universal low-power frequency shifter, a potentially valuable addition to the nonlinear optics toolbox.

physics.optics↗

arXiv2021

A chiral one-dimensional atom using a quantum dot in an open microcavity

In nanostructures, the light-matter interaction can be engineered to be chiral. In the fully quantum regime, a chiral one-dimensional atom, a photon propagating in one direction interacts with the atom; a photon propagating in the other direction does not. Chiral quantum optics has applications in creating nanoscopic single-photon routers, circulators, phase-shifters and two-photon gates. Furthermore, the directional photon-exchange between many emitters in a chiral system may enable the creation of highly exotic quantum states. Here, we present a new way of implementing chiral quantum optics $-$ we use a low-noise quantum dot in an open microcavity. Specifically, we demonstrate the non-reciprocal absorption of single photons, a single-photon diode. The non-reciprocity, the ratio of the transmission in the forward-direction to the transmission in the reverse direction, is as high as 10.7 dB, and is optimised $\textit{in situ}$ by tuning the photon-emitter coupling to the optimal operating condition ($β= 0.5$). Proof that the non-reciprocity arises from a single quantum emitter lies in the nonlinearity with increasing input laser power, and in the photon statistics $-$ ultralow-power laser light propagating in the diode's reverse direction results in a highly bunched output ($g^{(2)}(0) = 101$), showing that the single-photon component is largely removed. The results pave the way to a single-photon phase shifter, and, by exploiting a quantum dot spin, to two-photon gates and quantum non-demolition single-photon detectors.

quant-ph↗

arXiv2021

Low charge-noise nitrogen-vacancy centers in diamond created using laser writing with a solid-immersion lens

We report on pulsed-laser induced generation of nitrogen-vacancy (NV) centers in diamond facilitated by a solid-immersion lens (SIL). The SIL enables laser writing at energies as low as 5.8 nJ per pulse and allows vacancies to be formed close to a diamond surface without inducing surface graphitization. We operate in the previously unexplored regime where lattice vacancies are created following tunneling breakdown rather than multiphoton ionization. We present three samples in which NV-center arrays were laser-written at distances between ~1 $μ$m and 40 $μ$m from a diamond surface, all presenting narrow distributions of optical linewidths with means between 62.1 MHz and 74.5 MHz. The linewidths include the effect of long-term spectral diffusion induced by a 532 nm repump laser for charge-state stabilization, thereby emphasizing the particularly low charge-noise environment of the created color centers. Such high-quality NV centers are excellent candidates for practical applications employing two-photon quantum interference with separate NV centers. Finally, we propose a model for disentangling power broadening from inhomogeneous broadening in the NV center optical linewidth.

physics.optics↗

arXiv2021

Capacitively-coupled and inductively-coupled excitons in bilayer MoS$_2$

The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to the other. Conversely, the interlayer exciton interacts inductively with the intralayer A-exciton (negative coupling constant). First-principles many-body calculations show that this coupling arises via an intravalley exchange-interaction of A- and B-excitons.

cond-mat.mes-hall↗

arXiv2021

Giant Stark splitting of an exciton in bilayer MoS$_2$

Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is considerably reduced. Here, we show tuning over 120 meV of interlayer excitons with high oscillator strength in bilayer MoS2. These shifts are due to the quantum confined Stark effect, here the electron is localised to one of the layers yet the hole is delocalised across the bilayer. We optically probe the interaction between intra- and interlayer excitons as they are energetically tuned into resonance. This allows studying their mixing supported by beyond standard density functional theory calculations including excitonic effects. In MoS2 trilayers our experiments uncover two types of interlayer excitons with and without in-built electric dipoles, respectively. Highly tunable excitonic transitions with large oscillator strength and in-built dipoles, that lead to considerable exciton-exciton interactions, hold great promise for non-linear optics with polaritons.

cond-mat.mes-hall↗

arXiv2021

High quality-factor diamond-confined open microcavity

With a highly coherent, optically addressable electron spin, the nitrogen vacancy (NV) centre in diamond is a promising candidate for a node in a quantum network. However, the NV centre is a poor source of coherent single photons owing to a long radiative lifetime, a small branching ratio into the zero-phonon line (ZPL) and a poor extraction efficiency out of the high-index host material. In principle, these three shortcomings can be addressed by resonant coupling to a single mode of an optical cavity. Utilising the weak-coupling regime of cavity electrodynamics, resonant coupling between the ZPL and a single cavity-mode enhances the transition rate and branching ratio into the ZPL. Furthermore, the cavity channels the light into a well-defined mode thereby facilitating detection with external optics. Here, we present an open Fabry-Perot microcavity geometry containing a single-crystal diamond membrane, which operates in a regime where the vacuum electric field is strongly confined to the diamond membrane. There is a field anti-node at the diamond-air interface. Despite the presence of surface losses, quality factors exceeding $120\,000$ and a finesse $\mathcal{F}=11\,500$ were observed. We investigate the interplay between different loss mechanisms, and the impact these loss channels have on the performance of the cavity. This analysis suggests that the "waviness" (roughness with a spatial frequency comparable to that of the microcavity mode) is the mechanism preventing the quality factors from reaching even higher values. Finally, we apply the extracted cavity parameters to the NV centre and calculate a predicted Purcell factor exceeding 150.

quant-ph↗

arXiv2021

Optically driving the radiative Auger transition

In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and at infrared frequencies as shake-up lines in two-dimensional systems. So far, all the work on the radiative Auger process has focussed on detecting the spontaneous emission. However, the fact that the radiative Auger process leads to photon emission suggests that the transition can also be optically excited. In such an inverted radiative Auger process, excitation would correspond to simultaneous photon absorption and electronic de-excitation. Here, we demonstrate optical driving of the radiative Auger transition on a trion in a semiconductor quantum dot. The radiative Auger and the fundamental transition together form a $Λ$-system. On driving both transitions of this $Λ$-system simultaneously, we observe a reduction of the fluorescence signal by up to $70\%$. Our results demonstrate a type of optically addressable transition connecting few-body Coulomb interactions to quantum optics. The results open up the possibility of carrying out THz spectroscopy on single quantum emitters with all the benefits of optics: coherent laser sources, efficient and fast single-photon detectors. In analogy to optical control of an electron spin, the $Λ$-system between the radiative Auger and the fundamental transitions allows optical control of the emitters' orbital degree of freedom.

quant-ph↗

arXiv2021

Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress

A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results.

physics.optics↗

arXiv2021

Suppression of surface-related loss in a gated semiconductor microcavity

We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR) with radius $\sim 10$ $μ$m paired with a GaAs-based heterostructure. The heterostructure consists of a semiconductor DBR followed by an n-i-p diode with a layer of quantum dots in the intrinsic region. Free-carrier absorption in the highly doped n- and p-layers is minimized by positioning them close to a node of the vacuum electromagnetic-field. The surface, however, resides at an anti-node of the vacuum field and results in significant loss. These losses are much reduced by surface passivation. The strong dependence on wavelength implies that the main effect of the surface passivation is to eliminate the surface electric field, thereby quenching below-bandgap absorption via a Franz-Keldysh-like effect. An additional benefit is that the surface passivation reduces scattering at the GaAs surface. These results are important in other nano-photonic devices which rely on a GaAs-vacuum interface to confine the electromagnetic field.

physics.optics↗

arXiv2021

Radiative Auger Process in the Single-Photon Limit

In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon is created. In a semiconductor quantum dot, radiative Auger is predicted for charged excitons. Here we report the observation of radiative Auger on trions in single quantum dots. For a trion, a photon is created on electron-hole recombination, leaving behind a single electron. The radiative Auger process promotes this additional (Auger) electron to a higher shell of the quantum dot. We show that the radiative Auger effect is a powerful probe of this single electron: the energy separations between the resonance fluorescence and the radiative Auger emission directly measure the single-particle splittings of the electronic states in the quantum dot with high precision. In semiconductors, these single-particle splittings are otherwise hard to access by optical means as particles are excited typically in pairs, as excitons. After the radiative Auger emission, the Auger carrier relaxes back to the lowest shell. Going beyond the original theoretical proposals, we show how applying quantum optics techniques to the radiative Auger photons gives access to the single-electron dynamics, notably relaxation and tunneling. This is also hard to access by optical means: even for quasi-resonant $p$-shell excitation, electron relaxation takes place in the presence of a hole, complicating the relaxation dynamics. The radiative Auger effect can be exploited in other semiconductor nanostructures and quantum emitters in the solid state to determine the energy levels and the dynamics of a single carrier.

cond-mat.mes-hall↗

arXiv2020

Narrow optical linewidths and spin pumping on charge-tunable, close-to-surface self-assembled quantum dots in an ultra-thin diode

We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the top GaAs surface. We design and realize a p-i-n-i-n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below $2\,μ\text{eV}$, just a factor of two above the transform limit. Clear optical spin pumping is observed in a magnetic field of $0.5\,\text{T}$ in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots -- highly coherent single photon generation, ultra-fast optical spin manipulation -- in the thin diodes required in quantum nano-photonics and nano-phononics applications.

cond-mat.mes-hall↗

arXiv2020

Low-Noise GaAs Quantum Dots for Quantum Photonics

Quantum dots are both excellent single-photon sources and hosts for single spins. This combination enables the deterministic generation of Raman-photons -- bandwidth-matched to an atomic quantum-memory -- and the generation of photon cluster states, a resource in quantum communication and measurement-based quantum computing. GaAs quantum dots in AlGaAs can be matched in frequency to a rubidium-based photon memory, and have potentially improved electron spin coherence compared to the widely used InGaAs quantum dots. However, their charge stability and optical linewidths are typically much worse than for their InGaAs counterparts. Here, we embed GaAs quantum dots into an $n$-$i$-$p$-diode specially designed for low-temperature operation. We demonstrate ultra-low noise behaviour: charge control via Coulomb blockade, close-to lifetime-limited linewidths, and no blinking. We observe high-fidelity optical electron-spin initialisation and long electron-spin lifetimes for these quantum dots. Our work establishes a materials platform for low-noise quantum photonics close to the red part of the spectrum.

cond-mat.mes-hall↗