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Rinaldo Trotta

Publications and source records attributed to Rinaldo Trotta.

69 records · Page 4Linked to original sources

Two-photon interference from two blinking quantum emitters

We investigate the effect of blinking on the two-photon interference measurement from two independent quantum emitters. We find that blinking significantly alters the statistics in the second-order intensity correlation function g$^{(2)}(τ)$ and the outcome of two-photon interference measurements performed with independent quantum emitters. We theoretically demonstrate that the presence of blinking can be experimentally recognized by a deviation from the g$^{(2)}_{D}(0)=0.5$ value when distinguishable photons impinge on a beam splitter. Our results show that blinking imposes a mandatory cross-check measurement to correctly estimate the degree of indistinguishablility of photons emitted by independent quantum emitters.

cond-mat.mes-hall↗

Effects of Dielectric Stoichiometry on the Photoluminescence Properties of Encapsulated WSe2 Monolayers

Two-dimensional transition-metal-dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact performances. However atomically thin materials are highly sensitive to surrounding dielectric media, which imposes severe limitations to their practical applicability. Hence for their suitable integration into devices, the development of reliable encapsulation procedures that preserve their physical properties are required. Here, the excitonic photoluminescence of WSe2 monolayer flakes is assessed, at room temperature and 10 K, on mechanically exfoliated flakes encapsulated with SiOx and AlxOy layers employing chemical and physical deposition techniques. Conformal flakes coating on untreated - non-functionalized - flakes is successfully demonstrated by all the techniques except for atomic layer deposition, where a cluster-like oxide coating is observed. No significant compositional or strain state changes in the flakes are detected upon encapsulation by any of the techniques. Remarkably, our results evidence that the flakes' optical emission is strongly influenced by the quality of the encapsulating oxide - stoichiometry -. When the encapsulation is carried out with slightly sub-stoichiometric oxides two remarkable phenomena are observed. First, there is a clear electrical doping of the monolayers that is revealed through a dominant trion - charged exciton - room-temperature photoluminescence. Second, a strong decrease of the monolayers optical emission is measured attributed to non-radiative recombination processes and/or carriers transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation.

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Phonon-assisted two-photon interference from remote quantum emitters

Photonic quantum technologies are on the verge of finding applications in everyday life with quantum cryptography and the quantum internet on the horizon. Extensive research has been carried out to determine suitable quantum emitters and single epitaxial quantum dots are emerging as near-optimal sources of bright, on-demand, highly indistinguishable single photons and entangled photon pairs. In order to build up quantum networks, it is now essential to interface remote quantum emitters. However, this is still an outstanding challenge, as the quantum states of dissimilar 'artificial atoms' have to be prepared on-demand with high fidelity, and the generated photons have to be made indistinguishable in all possible degrees of freedom. Here, we overcome this major obstacle and show an unprecedented two-photon interference (visibility of 51+/-5%) from remote strain-tunable GaAs quantum dots, emitting on-demand photon-pairs. We achieve this result by exploiting for the first time the full potential of the novel phonon-assisted two-photon excitation scheme, which allows for the generation of highly indistinguishable (visibility of 71+/-9%) entangled photon-pairs (fidelity of 90+/-2%), it enables push-to button biexciton state preparation (fidelity of 80+/-2%) and it outperforms conventional resonant two-photon excitation schemes in terms of robustness against environmental decoherence. Our results mark an important milestone for the practical realization of quantum repeaters and complex multi-photon entanglement experiments involving dissimilar artificial atoms.

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Comparison of different bonding techniques for efficient strain transfer using piezoelectric actuators

In this paper strain transfer efficiencies from single crystalline piezoelectric lead magnesium niobate-lead titanate (PMN-PT) substrate to a GaAs semiconductor membrane bonded on top are investigated using state-of-the-art x-ray diffraction (XRD) techniques and finite-element-method (FEM) simulations. Two different bonding techniques are studied, namely gold-thermo-compression and polymer-based SU8 bonding. Our results show a much higher strain-transfer for the "soft" SU8 bonding in comparison to the "hard" bonding via gold-thermo-compression. A comparison between the XRD results and FEM simulations allows to explain this unexpected result with the presence of complex interface structures between the different layers.

cond-mat.mtrl-sci↗

Electrically-Pumped Wavelength-Tunable GaAs Quantum Dots Interfaced with Rubidium Atoms

We demonstrate the first wavelength-tunable electrically-pumped source of non-classical light that can emit photons with wavelength in resonance with the D2 transitions of 87Rb atoms. The device is fabricated by integrating a novel GaAs single-quantum-dot light-emitting-diode (LED) onto a piezoelectric actuator. By feeding the emitted photons into a 75-mm-long cell containing warm 87Rb atom vapor, we observe slow-light with a temporal delay of up to 3.4 ns. In view of the possibility of using 87Rb atomic vapors as quantum memories, this work makes an important step towards the realization of hybrid-quantum systems for future quantum networks.

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Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

The development of scalable sources of non-classical light is fundamental to unlock the technological potential of quantum photonics\cite{Kimble:Nat2008}. Among the systems under investigation, semiconductor quantum dots are currently emerging as near-optimal sources of indistinguishable single photons. However, their performances as sources of entangled-photon pairs are in comparison still modest. Experiments on conventional Stranski-Krastanow InGaAs quantum dots have reported non-optimal levels of entanglement and indistinguishability of the emitted photons. For applications such as entanglement teleportation and quantum repeaters, both criteria have to be met simultaneously. In this work, we show that this is possible focusing on a system that has received limited attention so far: GaAs quantum dots grown via droplet etching. Using a two-photon resonant excitation scheme, we demonstrate that these quantum dots can emit triggered polarization-entangled photons with high purity (g^(2)(0)=0.002 +/-0.002), high indistinguishability (0.93 +/-0.07) and high entanglement fidelity (0.94 +/-0.01). Such unprecedented degree of entanglement, which in contrast to InGaAs can theoretically reach near-unity values, allows Bell's inequality (2.64 +/-0.01) to be violated without the aid of temporal or spectral filtering. Our results show that if quantum-dot entanglement resources are to be used for future quantum technologies, GaAs might be the system of choice.

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An artificial Rb atom in a semiconductor with lifetime-limited linewidth

We report results important for the creation of a best-of-both-worlds quantum hybrid system consisting of a solid-state source of single photons and an atomic ensemble as quantum memory. We generate single photons from a GaAs quantum dot (QD) frequency-matched to the Rb D2-transitions and then use the Rb transitions to analyze spectrally the quantum dot photons. We demonstrate lifetime-limited QD linewidths (1.48 GHz) with both resonant and non-resonant excitation. The QD resonance fluorescence in the low power regime is dominated by Rayleigh scattering, a route to match quantum dot and Rb atom linewidths and to shape the temporal wave packet of the QD photons. Noise in the solid-state environment is relatively benign: there is a blinking of the resonance fluorescence at MHz rates but negligible upper state dephasing of the QD transition. We therefore establish a close-to-ideal solid-state source of single photons at a key wavelength for quantum technologies.

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Fourier synthesis of radio frequency nanomechanical pulses with different shapes

The concept of Fourier synthesis is heavily employed in both consumer electronic products and fundamental research. In the latter, pulse shaping is key to dynamically initialize, probe and manipulate the state of classical or quantum systems. In nuclear magnetic resonance, for instance, shaped pulses have a long-standing tradition and the underlying fundamental concepts have subsequently been successfully extended to optical frequencies and even to implement quantum gate operations. Transferring these paradigms to nanomechanical systems requires tailored nanomechanical waveforms. Here, we report on an additive Fourier synthesizer for nanomechanical waveforms based on monochromatic surface acoustic waves. As a proof of concept, we electrically synthesize four different elementary nanomechanical waveforms from a fundamental surface acoustic wave at $ f_1 \sim 150$ MHz using a superposition of up to three discrete harmonics $f_n$. We employ these shaped pulses to interact with an individual sensor quantum dot and detect their deliberately and temporally modulated strain component via the opto-mechanical quantum dot response. Importantly, and in contrast to the direct mechanical actuation by bulk piezoactuators, surface acoustic waves provide much higher frequencies (> 20 GHz) to resonantly drive mechanical motion. Thus, our technique uniquely allows coherent mechanical control of localized vibronic modes of optomechanical crystals, even in the quantum limit when cooled to the vibrational ground state.

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Scalable Sources of Entangled Photons with Wavelength on Demand

The prospect of using the quantum nature of light for secure communication keeps spurring the search and investigation of suitable sources of entangled-photons. Semiconductor quantum dots are arguably the most attractive. They can generate indistinguishable entangled-photons deterministically, and are compatible with current photonic-integration technologies, a set of properties not shared by any other entanglement resource. However, as no two quantum dots are identical, they emit entangled-photons with random energies. This hinders their exploitation in communication protocols requiring entangled-states with well-defined energies. Here, we introduce scalable quantum-dot-based sources of polarization-entangled-photons whose energy can be controlled via dynamic strain-engineering without degrading the degree of entanglement of the source. As a test-bench, we interface quantum dots with clouds of atomic vapours, and we demonstrate slow-entangled-photons from a single quantum emitter. These results pave the way towards the implementation of hybrid quantum networks where entanglement is distributed among distant parties using scalable optoelectronic devices.

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Atomic Clouds as Spectrally-Selective and Tunable Delay Lines for Single Photons from Quantum Dots

We demonstrate a compact, spectrally-selective, and tunable delay line for single photons emitted by quantum dots. This is achieved by fine-tuning the wavelength of the optical transitions of such "artificial atoms" into a spectral window in which a cloud of natural atoms behaves as slow-light medium. By employing the ground-state fine-structure-split exciton confined in an InGaAs/GaAs quantum dot as a source of single photons at different frequencies and the hyperfine-structure-split $D_1$ transition of Cs-vapors as a tunable delay-medium, we achieve a differential delay of up 2.4 ns on a 7.5 cm long path for photons that are only 60 μeV (14.5 GHz) apart. To quantitatively explain the experimental data we develop a theoretical model that accounts for both the inhomogeneously broadening of the quantum-dot emission lines and the Doppler-broadening of the atomic lines. The concept we proposed here may be used to implement time-reordering operations aimed at erasing the "which-path" information that deteriorates entangled-photon emission from excitons with finite fine-structure-splitting.

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Strain-tunable entangled-light-emitting diodes with high yield and fast operation speed

Triggered sources of entangled photons play crucial roles in almost any existing protocol of quantum information science. The possibility to generate these non-classical states of light with high speed and using electrical pulses could revolutionize the field. Entangled-light-emitting-diodes (ELEDs) based on semiconductor quantum dots (QDs) are at present the only devices that can address this task 5. However, ELEDs are plagued by a source of randomness that hampers their practical exploitation in the foreseen applications: the very low probability (~10-2) of finding QDs with sufficiently small fine-structure-splitting for entangled-photon-generation. Here, we overcome this hurdle by introducing the first strain-tunable ELEDs (S-ELEDs) that exploit piezoelectric-induced strains to tune QDs for entangled-photon-generation. We demonstrate that up to 30% of the QDs in S-ELEDs emit polarization-entangled photon pairs with entanglement-fidelities as high as f+ = 0.83(5). Driven at the highest operation speed of 400 MHz ever reported so far, S-ELEDs emerge as unique devices for high-data rate entangled-photon applications.

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Energy-tunable sources of entangled photons: a viable concept for solid-state-based quantum relays

We propose a new method of generating triggered entangled photon pairs with wavelength on demand. The method uses a micro-structured semiconductor-piezoelectric device capable of dynamically reshaping the electronic properties of self-assembled quantum dots (QDs) via anisotropic strain-engineering. Theoretical models based on kp theory in combination with finite-element calculations show that the energy of the polarization-entangled photons emitted by QDs can be tuned in a range larger than 100 meV without affecting the degree of entanglement of the quantum source. These results pave the way towards the deterministic implementation of QD entanglement resources in all-electrically-controlled solid-state-based quantum relays.

cond-mat.mtrl-sci↗

Engineering of quantum dot photon sources via electro-elastic fields

The possibility to generate and manipulate non-classical light using the tools of mature semiconductor technology carries great promise for the implementation of quantum communication science. This is indeed one of the main driving forces behind ongoing research on the study of semiconductor quantum dots. Often referred to as artificial atoms, quantum dots can generate single and entangled photons on demand and, unlike their natural counterpart, can be easily integrated into well-established optoelectronic devices. However, the inherent random nature of the quantum dot growth processes results in a lack of control of their emission properties. This represents a major roadblock towards the exploitation of these quantum emitters in the foreseen applications. This chapter describes a novel class of quantum dot devices that uses the combined action of strain and electric fields to reshape the emission properties of single quantum dots. The resulting electro-elastic fields allow for control of emission and binding energies, charge states, and energy level splittings and are suitable to correct for the quantum dot structural asymmetries that usually prevent these semiconductor nanostructures from emitting polarization-entangled photons. Key experiments in this field are presented and future directions are discussed.

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Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.

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Highly entangled photons from hybrid piezoelectric-semiconductor quantum dot devices

Entanglement resources are key ingredients of future quantum technologies. If they could be efficiently integrated into a semiconductor platform a new generation of devices could be envisioned, whose quantum-mechanical functionalities are controlled via the mature semiconductor technology. Epitaxial quantum dots (QDs) embedded in diodes would embody such ideal quantum devices, but QD structural asymmetries lower dramatically the degree of entanglement of the sources and hamper severely their real exploitation in the foreseen applications. In this work, we overcome this hurdle using strain-tunable optoelectronic devices, where any QD can be tuned for the emission of highly polarization-entangled photons. The electrically-controlled sources violate Bell inequalities without the need of spectral or temporal filtering and they feature the highest degree of entanglement ever reported for QDs, with concurrence as high as 0.75(2). These quantum-devices are at present the most promising candidates for the direct implementation of QD-based entanglement-resources in quantum information science and technology.

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