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arXiv · 1410.2436

Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures

Stefano Frabboni·Vincenzo Grillo·Gian Carlo Gazzadi·Roberto Balboni·Rinaldo Trotta·Antonio Polimeni·Mario Capizzi·Faustino Martelli·Silvia Rubini·Giulio Guzzinati·Frank Glas
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Abstract

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.

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Stefano Frabboni, Vincenzo Grillo, Gian Carlo Gazzadi, Roberto Balboni, Rinaldo Trotta, Antonio Polimeni, Mario Capizzi, Faustino Martelli, Silvia Rubini, Giulio Guzzinati, Frank Glas. 2014-10-09. Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H heterostructures. https://doi.org/10.1063/1.4752464

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