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Robert Stephen White

Publications and source records attributed to Robert Stephen White.

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Timing resolution from beam tests on thin LGADs down to 16.6 ps

The paper reports on the timing resolution achieved with Low-Gain Avalanche Diodes (LGADs), optimised for extreme-fluence conditions, at the DESY Test Beam Facility using 4~GeV/c electrons. The LGADs adopt an $n$-in-$p$ technology with a $p^{+}$-type boron gain implant, co-implanted with carbon to mitigate acceptor deactivation due to irradiation. The substrate thickness of the sensors varies from 20 to 45~\micron, with an active area spanning from 0.75~$\times$~0.75 to 1.28~$\times$~1.28~mm$^{2}$. The experimental setup consisted of a 45~\micron-thick trigger sensor with an active area of 3.6~$\times$~3.6~mm$^{2}$, two device-under-test (DUT) planes, and a Photonis micro-channel plate photomultiplier tube (MCP) as a time reference. Data taking was performed at the ambient temperature of the facility, at 18$^{\circ}$C. The gain was measured between 7 and 40 across all non-irradiated sensors in the study. The timing resolution was calculated from a Gaussian fitting of the difference in times of arrival of a particle at the DUT and the MCP, using the constant fraction discriminator technique. A timing resolution of 26.4~\ps was achieved in 45~\micron-thick sensors, down to 16.6~\ps in 20~\micron-thick sensors, in the non-irradiation study. The combination of two 20~\micron-thick LGADs reached a timing resolution of 12.2~\ps. A set of 30~\micron-thick sensors irradiated with neutrons at fluences between 0.4~$\times$~10$^{15}$ and 2.5~$\times$~10$^{15}$~\mevneut were tested in the beam. These irradiated sensors achieved a gain between 7 and 30 using a similar apparatus but cooled with solidified CO$_{2}$ to -42$^{\circ}$C. A timing resolution of 20~\ps was obtained in these irradiated sensors.

physics.ins-det

Compensated LGAD optimisation through van der Pauw test structures

A new gain implant design has recently been introduced to enhance the radiation resistance of low-gain avalanche diodes (LGADs) to the extreme fluences anticipated in future hadron colliders like FCC-hh. This design utilises an engineered compensation of two opposing types of doping implants, requiring a thorough analysis of their evolution due to irradiation. To this end, the experimental measurements of their initial test structures have been compared with Technology CAD simulations both before and after irradiation. From the measurement-simulation comparison regarding C-V characteristics, the donor removal at high initial donor concentrations ($>10^{16}$ at/cm$^3$) used in Compensated LGADs has been studied, along with how donor co-implantation influences the beneficial effect of carbon to slow acceptor removal. Furthermore, an innovative application of van der Pauw test structures, typically employed by foundries to monitor process quality, has been implemented. The doping removal of the single implants used in Compensated LGADs has been estimated by examining the variation in sheet resistance with irradiation through these structures.

physics.ins-det