arXiv subjects

Roberto Robles

Publications and source records attributed to Roberto Robles.

24 records · Page 2Linked to original sources

arXiv2016

Structural and magnetic properties of FeMn$_x$ ($x=$1...6) chains supported on Cu$_2$N / Cu (100)

Heterogeneous atomic magnetic chains are built by atom manipulation on a Cu$_2$N/Cu (100) substrate. Their magnetic properties are studied and rationalized by a combined scanning tunneling microscopy (STM) and density functional theory (DFT) work completed by model Hamiltonian studies. The chains are built using Fe and Mn atoms ontop of the Cu atoms along the N rows of the Cu$_2$N surface. Here, we present results for FeMn$_x$ ($x$=1...6) chains emphasizing the evolution of the geometrical, electronic, and magnetic properties with chain size. By fitting our results to a Heisenberg Hamiltonian we have studied the exchange-coupling matrix elements $J$ for different chains. For the shorter chains, $x \leq 2$, we have included spin-orbit effects in the DFT calculations, extracting the magnetic anisotropy energy. Our results are also fitted to a simple anisotropic spin Hamiltonian and we have extracted values for the longitudinal-anisotropy $D$ and transversal-anisotropy $E$ constants. These parameters together with the values for $J$ allow us to compute the magnetic excitation energies of the system and to compare them with the experimental data.

cond-mat.mes-hall↗

arXiv2016

Electronic structure of atomic manganese chains supported on Cu$_2$N / Cu (100)

Scanning tunnelling microscopy and density functional theory studies of manganese chains adsorbed on Cu$_2$N/Cu (100) reveal an unsuspected electronic edge state at $\sim 1$ eV above the Fermi energy. This Tamm-like state is strongly localised to the last Mn atom of the chain and fully spin polarised. However, no equivalence is found for occupied states, and the electronic structure at $\sim -1$ eV is mainly spin unpolarised due to the extended $p$-states of the N atoms that mediate the coupling between the Mn atoms in the chain. Odd-numbered Mn chains present an exponentially decreasing direct coupling with distance between the two edges, leading to a vanishing bonding/anti-bonding splitting of states while even-numbered Mn chains present perfect decoupling of both edges due to the the antiferromagnetic ordering of Mn chains.

cond-mat.mes-hall↗

arXiv2015

Entanglement-induced Kondo screening in atomic spin chains

Quantum entanglement permeates the complex ground states of correlated electron materials defying single-particle descriptions. Coupled magnetic atoms have potential as model systems for entanglement in condensed matter giving the opportunity to create artificial many-body states which can be controlled by tuning the underlying interactions. They provide an avenue to unravel the complexities of correlated-electron materials. Here we use low temperature scanning tunnelling microscopy (STM) and atomic manipulation to tune entanglement in chains of magnetic atoms. We find that a Kondo singlet state can emerge from this entanglement. The many electron Kondo state is based on the screening of the entangled spin ground state of the chain by substrate electrons and can be engineered to envelop at least ten magnetic atoms. The concomitant Kondo resonance measured in the differential conductance enables the electric read-out of entanglement. By tuning composition and coupling strength within atomic chains it is possible to create model spin chains with defined entanglement. This lays the foundation for a new class of experiments to construct exotic correlated-electron materials atom by atom.

cond-mat.mes-hall↗

arXiv2014

Spin transport in dangling-bond wires on doped H-passivated Si(100)

New advances in single-atom manipulation are leading to the creation of atomic structures on H passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. We perform total-energy and electron-transport calculations to reveal the properties and understand the features of atomic wires crafted by H removal from the surface. The presence of dopants radically change the wire properties. Our calculations show that dopants have a tendency to approach the dangling-bond wires, and in these conditions, transport is enhanced and spin selective. These results have important implications in the development of atomic-scale spintronics showing that boron, and to a lesser extent phosphorous, convert the wires in high-quality spin filters.

cond-mat.mtrl-sci↗

arXiv2012

Elastic transport through dangling-bond silicon wires on H passivated Si(100)

We evaluate the electron transmission through a dangling-bond wire on Si(100)-H (2x1). Finite wires are modelled by decoupling semi-infinite Si electrodes from the dangling-bond wire with passivating H atoms. The calculations are performed using density functional theory in a non-periodic geometry along the conduction direction. We also use Wannier functions to analyze our results and to build an effective tight-binding Hamiltonian that gives us enhanced insight in the electron scattering processes. We evaluate the transmission to the different solutions that are possible for the dangling-bond wires: Jahn-Teller distorted ones, as well as antiferromagnetic and ferromagnetic ones. The discretization of the electronic structure of the wires due to their finite size leads to interesting transmission properties that are fingerprints of the wire nature.

cond-mat.mtrl-sci↗

arXiv2012

Energetics and stability of dangling-bond silicon wires on H passivated Si(100)

We evaluate the electronic, geometric and energetic properties of quasi 1-D wires formed by dangling bonds on Si(100)-H (2 x 1). The calculations are performed with density functional theory (DFT). Infinite wires are found to be insulating and Peierls distorted, however finite wires develop localized electronic states that can be of great use for molecular-based devices. The ground state solution of finite wires does not correspond to a geometrical distortion but rather to an antiferromagnetic ordering. For the stability of wires, the presence of abundant H atoms in nearby Si atoms can be a problem. We have evaluated the energy barriers for intradimer and intrarow diffusion finding all of them about 1 eV or larger, even in the case where a H impurity is already sitting on the wire. These results are encouraging for using dangling-bond wires in future devices.

cond-mat.mtrl-sci↗