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Ronald Ulbricht

Publications and source records attributed to Ronald Ulbricht.

14 recordsLinked to original sources

Spin-Dependent Charge-State Conversion in NV Ensembles Mediated by Electron Tunneling

The nitrogen-vacancy (NV) center in diamond enables optical initialization and readout of its electronic spin, forming the basis of a wide range of quantum sensing and metrology applications. A central challenge in such measurements is the coexistence of two charge states, NV- and NV0: While detection protocols rely on the spin-dependent properties of NV-, fluorescence from NV0 does not carry useful contrast and is typically removed as background, reducing the available signal. Here, we show that the origin of NV0 emission depends strongly on the excitation wavelength in nitrogen-containing diamond. Using ensembles of NV centers with varying nitrogen concentrations, we compare excitation at the NV0 zero-phonon line (ZPL) at 575 nm with the commonly used 532 nm. We find that excitation at 575 nm generates NV0 predominantly through spin-selective tunneling from the excited state of NV- to nearby nitrogen donors, such that the NV0 emission follows the spin polarization of NV-. As a result, the NV0 fluorescence contributes to the measurable spin contrast, allowing the full fluorescence signal to be used for detection. This result opens opportunities for improved sensitivity in NV-based sensing applications.

cond-mat.mes-hall

Impact of strain on electron-phonon coupling of quantum emitters

Defects in semiconductors acting as optically active spin qubits are intriguing objects of fundamental study and future technological developments. These defect-based color centers are of particular interest for detection and response to physical variations such as pressure and strain, or conversely -- as we demonstrate the possibility of herein -- pressure and strain can be utilized to manipulate quantum emitter properties. To investigate how strain can alter the fundamental electron-phonon interaction of quantum defects, we employ the negatively charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC as a use-case and study its vibrational structure under applied tensile and compressive uniaxial strain using first-principles calculations. We show that the strain variations of the emission spectrum can be explained by differing responses of bulk-like and quasi-localized vibrational modes. Importantly, the $\mathrm{V_{Si}^{-}}$ defect exhibits a strain-induced enhancement of the Debye-Waller factor under uniaxial tensile strain applied along the $a$-axis of 4H-SiC, thereby improving its performance as a quantum emitter. The strain-dependent changes in the phonon sideband enable distinguishing between compressive and tensile strain, opening up the possibility of magnetic-field-free strain detection using only spin-conserving transitions of solid-state quantum emitters.

cond-mat.mtrl-sci

Unraveling the electronic structure of silicon vacancy centers in 4H-SiC

Point defects in silicon carbide (SiC), particularly the negatively-charged silicon vacancy ($\mathrm{V_{Si}^{-}}$) in 4H-SiC, are leading candidates for scalable quantum technologies due to their favorable spin-optical properties and compatibility with industrial semiconductor fabrication processes. Comprehensive knowledge of a defect's electronic structure is essential for interpreting spin-optical dynamics and for the reliable design and optimization of defect-based quantum devices. Despite extensive study, our knowledge of the electronic structure of $\mathrm{V_{Si}^{-}}$\ is limited since key excited-state manifolds have remained inaccessible to conventional steady-state spectroscopy. In this study, transient absorption spectroscopy is utilized to probe non-equilibrium electronic transitions of $\mathrm{V_{Si}^{-}}$\ and to uncover previously unobserved excited states. The first direct observation of the elusive V2' quartet transition is presented, with its broad spectral signature attributed to nonadiabatic vibronic coupling. Within the spin-doublet manifold, which is central to optically detected magnetic resonance (ODMR) but has remained unresolved spectroscopically, multiple optical transitions are identified. The complete electronic level structure in the relevant energy range is elucidated by combining polarization-resolved spectroscopy, group-theoretical analysis, quantum embedding calculations and first-principles optical lineshape modeling. Collectively, these results provide a microscopic understanding of the $\mathrm{V_{Si}^{-}}$\ electronic structure. Our approach also establishes a general framework for resolving and understanding complex excited-state manifolds in wide-bandgap color centers.

cond-mat.mtrl-sci

Charge state equilibration of nitrogen-vacancy center ensembles in diamond: The role of electron tunneling

The charge state stability of nitrogen-vacancy (NV) centers critically affects their application as quantum sensors and qubits. Understanding charge state conversion and equilibration is critical not only for NV centers in diamond but also for defects and impurities in wide-bandgap materials in general. The mechanisms by which these centers change charge state upon optical or electronic excitation without the presence of mobile carriers remain unclear, potentially affecting the performance of applications ranging from phosphors to power electronics. Here, we elucidate this issue for the case of photoionization of NV center ensembles. Using pump-probe spectroscopy, we ionize negatively charged NV centers and monitor the recovery of $\NVm$ on timescales of up to several seconds. We find that the recovery rate depends strongly on the concentration of surrounding nitrogen donors. Remarkably, the equilibration dynamics exhibit no discernible dependence on temperature, ruling out thermally activated processes. The multiphonon-assisted electron tunneling model, supported by density-functional calculations, explains the measurements and identifies tunneling as the equilibration mechanism.

cond-mat.mtrl-sci

Identifying high-energy electronic states of NV$^-$ centers in diamond

The negatively charged nitrogen-vacancy center in diamond is a prototype photoluminescent point defect spin qubit with promising quantum technology applications, enabled by its efficient optical spin polarization and readout. Its low-lying electronic states and optical spin polarization cycle have been well characterized over decades, establishing it as a benchmark system for state-of-the-art computational methods in point defect research. While the optical cycle is well understood, a comprehensive energetic analysis of higher-lying states has received less attention until recently. In this joint experimental theoretical study, we identify and characterize five high-energy states beyond those involved in the optical cycle. Using transient absorption spectroscopy, we determine their transition energies and relative oscillator strengths. Additionally, we perform two independent numerical studies employing two state-of-the-art post-DFT methods to support the experimental findings and assign energy levels. These results enhance our understanding of the NV center's energy spectrum and providing a broader reference for benchmarking high-level first-principles methods.

cond-mat.mtrl-sci

Towards high-sensitivity magnetometry with nitrogen vacancy centers in diamond using the singlet infrared absorption

The negatively-charged nitrogen vacancy (NV$^{-}$) center in diamond is widely used for quantum sensing since the sensitivity of the spin triplet in the electronic ground state to external perturbations such as strain and electromagnetic fields make it an excellent probe for changes in these perturbations. The spin state can be measured through optically detected magnetic resonance (ODMR), which is most commonly achieved by detecting the photoluminescence (PL) after exciting the spin-triplet transition. Recently, methods have been proposed and demonstrated that use the absorption of the infrared singlet transition at 1042 nm instead. These methods however require cryogenic temperatures or external cavities to enhance the absorption signal. Here, we report on our optimization efforts of the magnetometer sensitivity at room temperature and without cavities. We reach sensitivities of 18 pT$/\sqrt{\mathrm{Hz}}$, surpassing previously reported values. We also report on a defect that is native to CVD-grown diamond and thus absent in HPHT diamond, the excitation of which impacts the measured singlet absorption signal.

quant-ph

Near zero-field microwave-free magnetometry with ensembles of nitrogen-vacancy centers in diamond

We study cross-relaxation features near zero magnetic field with ensembles of nitrogen-vacancy (NV) centers in diamond and examine their properties in samples with a range (0.9 ppm - 16.0 ppm) of NV concentrations. The observed NV-NV cross-relaxation features between differently oriented NV centers in high (greater than 0.9 ppm)-NV-density samples hold promise for a variety of magnetometry applications where microwave fields (or any bias field) disturb the system under study. We theoretically determine the values of the bias magnetic fields corresponding to cross-relaxations between different axes and experimentally validate them. The behavior of zero-field cross-relaxation features as a function of temperature is also investigated.

cond-mat.mes-hall

Rapid multiplex ultrafast nonlinear microscopy for material characterization

We demonstrate rapid imaging based on four-wave mixing (FWM) by assessing the quality of advanced materials through measurement of their nonlinear response, exciton dephasing, and exciton lifetimes. We use a WSe$_2$ monolayer grown by chemical vapor deposition as a canonical example to demonstrate these capabilities. By comparison, we show that extracting material parameters such as FWM intensity, dephasing times, excited state lifetimes, and distribution of dark/localized states allows for a more accurate assessment of the quality of a sample than current prevalent techniques, including white light microscopy and linear micro-reflectance spectroscopy. We further discuss future improvements of the ultrafast FWM techniques by modeling the robustness of exponential decay fits to different spacing of the sampling points. Employing ultrafast nonlinear imaging in real-time at room temperature bears the potential for rapid in-situ sample characterization of advanced materials and beyond.

physics.optics

Hidden Silicon-Vacancy Centers in Diamond

We characterize a high-density sample of negatively charged silicon-vacancy (SiV$^-$) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of \ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity and extended electronic $T_2$ times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.

quant-ph

Coherent Interactions Between Silicon-Vacancy Centers in Diamond

We report coherent interactions within an ensemble of silicon-vacancy color centers in diamond. The interactions are ascribed to resonant dipole-dipole coupling. Further, we demonstrate control over resonant center pairs by using a driving optical pulse to induce collective, interaction-enabled Rabi-oscillations in the ensemble. Non-resonant center pairs do not undergo collective oscillations.

quant-ph

Using silicon-vacancy centers in diamond to probe the full strain tensor

An ensemble of silicon vacancy centers in diamond (\ce{SiV-}) is probed using two coherent spectroscopy techniques. Two main distinct families of \ce{SiV-} centers are identified using multidimensional coherent spectroscopy, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Such measurements are made at multiple points on the sample surface and variations in the strain tensor are observed.

cond-mat.mtrl-sci

Spectral Broadening and Ultrafast Dynamics of a Nitrogen-Vacancy Center Ensemble in Diamond

Many applications of nitrogen-vacancy (NV) centers in diamond crucially rely on a spectrally narrow and stable optical zero-phonon line transition. Though many impressive proof-of-principle experiments have been demonstrated, much work remains in engineering NV centers with spectral properties that are sufficiently robust for practical implementation. To elucidate the mechanisms underlying their interactions with the environment, we apply multi-dimensional coherent spectroscopy to an NV center ensemble in bulk diamond at cryogenic temperatures. Our spectra reveal thermal dephasing due to quasi-localized vibrational modes as well as ultrafast spectral diffusion on the picosecond timescale. The intrinsic, ensemble-averaged homogeneous linewidth is found to be in the tens of GHz range by extrapolating to zero temperature. We also observe a temperature-dependent Stark splitting of the excited state manifold, relevant to NV sensing protocols.

quant-ph

Enhanced third-order optical nonlinearity driven by surface-plasmon field gradients

Achieving efficient nonlinear optical frequency conversion in small volumes is key for future on-chip photonic devices that would provide a higher-speed alternative to modern electronics. However, the already intrinsically low conversion efficiency severely limits miniaturization to nanoscale dimensions. Here we demonstrate that gradient-field effects can provide for an efficient, conventionally dipole-forbidden nonlinear response, offering a new approach for enhanced nonlinear optics in nanostructures. We show that a {\em longitudinal} nonlinear source current can dominate the third-order optical nonlinearity of the free electron response in gold in the technologically important near-IR frequency range where the nonlinearities due to other mechanisms are particularly small. Using adiabatic nanofocusing to spatially confine the excitation fields, from measurements of the $2ω_1 - ω_2$ four-wave mixing response as a function of detuning $ω_1 - ω_2$, we find up to $10^{-5}$ conversion efficiency with a gradient field contribution to $χ^{(3)}_{\mathrm{Au}}$ of up to $10^{-19}~\mathrm{m}^2 / \mathrm{V}^2$. The results are in good agreement with theory based on plasma hydrodynamics. Our results demonstrate an increase in nonlinear conversion efficiency with decreasing sample size that can offset and even overcompensate the volume decrease of conventional dipolar pathways. This will enable more efficient nonlinear optical devices and frequency converters and facilitate the extension of coherent multidimensional spectroscopies to the nanoscale.

cond-mat.mes-hall

Detection of deep-subwavelength dielectric layers at terahertz frequencies using semiconductor plasmonic resonators

Plasmonic bowtie antennas made of doped silicon can operate as plasmonic resonators at terahertz (THz) frequencies and provide large field enhancement close to their gap. We demonstrate both experimentally and theoretically that the field confinement close to the surface of the antenna enables the detection of ultrathin (100 nm) inorganic films, about 3750 times thinner than the free space wavelength. Based on model calculations, we conclude that the detection sensitivity and its variation with the thickness of the deposited layer are related to both the decay of the local THz field profile around the antenna and the local field enhancement in the gap of the bowtie antenna. This large field enhancement has the potential to improve the detection limits of plasmon-based biological and chemical sensors.

cond-mat.mtrl-sci