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Rongbo Wu

Publications and source records attributed to Rongbo Wu.

At least 19 recordsLinked to original sources
arXiv2025

High-Q Lithium Niobate Microring Resonator with Electro-Optically Reconfigurable Coupling Strength

The development of sophisticated integrated photonic circuits demands microresonators that combine exceptional optical confinement with dynamic operational flexibility. Here, we demonstrate a racetrack resonator on the thin-film lithium niobate platform that achieves an electro-optically tunable coupling strength while maintaining a stable, high intrinsic Q factor on the order of 10^6. By incorporating a Mach-Zehnder interferometer into the coupling region, the device facilitates a continuous and reversible transition across the entire coupling spectrum from under-coupling and critical coupling to deep over-coupling. To ensure high spectral purity, we employ Euler bends to facilitate an adiabatic transition between the straight and curved waveguide sections. This design effectively suppresses the excitation of higher-order modes, resulting in a clean transmission spectrum characterized by exclusive fundamental mode operation. At the critical coupling point, the resonator exhibits a high extinction ratio exceeding 30 dB. The integration of stable ultra-high Q, single-mode purity, and full-range coupling reconfigurability positions this device as a vital component for adaptive microwave photonics, high-efficiency nonlinear optics, and programmable quantum photonic networks.

physics.optics↗
arXiv2025

Near-Zero Crosstalk and Ultra-Low Loss Waveguide Crossings Enabled by three-dimensional Ta2O5-on-LNOI Integrated Photonic Platform

Waveguide crossings represent one of the most critical components in very-large-scale photonic integration (VLSPI). Three-dimensional waveguide crossings, which distribute optical pathways across multiple planes, can achieve near-zero crosstalk and extremely low crossing-induced loss. However, they face an intrinsic trade-off between interlayer crossing performance and coupling efficiency. To address this challenge, we developed a low-cost fabrication method for 3D waveguide crossings by exploiting the edge rounding effect inherent to chemical mechanical polishing (CMP). Using this method, we demonstrate waveguide crossings with average loss below 0.002 dB and crosstalk below -62 dB on Ta2O5-on-LNOI integrated photonic platform. Our method maintains full compatibility with conventional semiconductor manufacturing technology and paves the way for realizing VLSPI on the thin-film lithium niobate platform.

physics.optics↗
arXiv2025

Monolithic low-noise erbium-doped thin-film lithium niobate waveguide amplifier with 18 dB fiber to fiber net gain

Erbium-doped waveguide amplifiers have captured great attentions in recent years due to the rapid advance of photonic integration materials and fabrication techniques. In this work, a compact erbium-doped thin-film lithium niobate waveguide amplifier integrated with high-efficiency edge-couplers on the small footprint of 2 mm{\cross}25 mm, achieving >18 dB fiber-to-fiber (off-chip) net gain with bidirectional pumping by ~1480 nm laser diodes, is fabricated by the photolithography assisted chemo-mechanical etching technique. The fiber-to-fiber noise figures of the amplifier are also characterized to be around 5 dB, and the maximum amplified signal powers at the output fiber are above 13 dBm. Theoretical amplifier modeling resolving the erbium absorption and emission spectra predicts the efficient gain scaling with waveguide length for most of the telecom C-band wavelengths. The demonstrated high-external-gain erbium-doped waveguide amplifier will benefit various applications from optical communication and metrology to integrated photonic computing and artificial intelligence

physics.optics↗
arXiv2025

Monolithically Integrated Optical Convolutional Processors on Thin Film Lithium Niobate

Photonic neural networks (PNNs) of sufficiently large physical dimensions and high operation accuracies are envisaged as an ideal candidate for breaking the major bottlenecks in the current artificial intelligence architectures in terms of latency, energy efficiency and computational power. To achieve this vision, it is of vital importance to scale up the PNNs and in the meantime reduce the high demand on the dimensions required by the PNNs. The underlying cause of this strategy is the enormous gap between the scales of photonic and electronic integrated circuits. Here, we demonstrate monolithically integrated optical convolutional processors on thin film lithium niobate (TFLN) to enable large-scale programmable convolution kernels and in turn greatly reduce the dimensions required by the subsequent fully connected layers. Experimental validation achieves high classification accuracies of 96%/86% on the MNIST/Fashion-MNIST datasets and 84.6% on the AG News dataset, while dramatically reducing the required subsequent fully connected layer dimensions to 196x10 (from 784x10) and 175x4 (from 800x4), respectively. Furthermore, our devices can be driven by commercial field-programmable gate array (FPGA) systems, a unique advantage in addition to their scalable channel number and kernel size, our architecture provides a solution to build practical machine learning photonic devices.

physics.optics↗
arXiv2024

An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW

We demonstrate high-power thin film lithium niobate (TFLN) erbium-doped waveguide amplifier (EDWA) with a maximum on-chip output power of 113 mW and a gain of 16 dB. The on-chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1x1 cm2. Particularly, we connect segmented LMA waveguides with waveguide tapers to achieve on-chip mode conversion which maintains single-mode propagation all over the EDWA even at the waveguide bends. The design leads to significant increase of the amplified signal power by orders of magnitude and will open an avenue for applications such as on-chip high-power lasers and amplifiers system.

physics.optics↗
arXiv2024

Photonic Neural Network Fabricated on Thin Film Lithium Niobate for High-Fidelity and Power-Efficient Matrix Computation

Photonic neural networks (PNNs) have emerged as a promising platform to address the energy consumption issue that comes with the advancement of artificial intelligence technology, and thin film lithium niobate (TFLN) offers an attractive solution as a material platform mainly for its combined characteristics of low optical loss and large electro-optic (EO) coefficients. Here, we present the first implementation of an EO tunable PNN based on the TFLN platform. Our device features ultra-high fidelity, high computation speed, and exceptional power efficiency. We benchmark the performance of our device with several deep learning missions including in-situ training of Circle and Moons nonlinear datasets classification, Iris flower species recognition, and handwriting digits recognition. Our work paves the way for sustainable up-scaling of high-speed, energy-efficient PNNs.

physics.optics↗
arXiv2024

On-chip wavelength division multiplexing by angled multimode interferometer fabricated on erbium-doped thin film lithium niobate on insulator

Photonic integrated circuits based on erbium doped thin film lithium niobate on insulator has attracted broad interests with insofar various waveguide amplifiers and microlasers demonstrated. Wideband operation facilitated by the broadband absorption and emission of erbium ions necessitates the functional integration of wavelength filter and multiplexer on the same chip. Here a low-loss wavelength division multiplexer at the resonant pumping and emission wavelengths (~1480 nm and 1530~1560 nm) of erbium ions based on angled multimode interferometer, is realized in the erbium doped thin film lithium niobate on insulator fabricated by the photolithography assisted chemomechanical etching technique. The minimum on-chip insertion losses of the fabricated device are <0.7 dB for both wavelength ranges, and a 3-dB bandwidth of >20 nm is measured at the telecom C-band. Besides, direct visualization of the multimode interference pattern by the visible upconversion fluorescence of erbium ions compares well with the simulated light propagation in the multimode interferometer. Spectral tuning of the wavelength division multiplexer by structural design is also demonstrated and discussed.

physics.optics↗
arXiv2023

Electro-optically programmable photonic circuits enabled by wafer-scale integration on thin-film lithium niobate

Programmable photonic circuits performing universal linear-optical transformations underpin vital functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and many other intriguing applications. Recent advances in photonic integrated circuits facilitate monolithic integration of externally controlled Mach-Zehnder interferometers which can implement arbitrary unitary transformation on a large number of input/output modes. In this work, we demonstrate a 4x4 programmable linear photonic circuit on lithium niobate on insulator platform employing fast, power-efficient and low-loss electro-optical phase shifters, showing enormous advantages in terms of configuration rate and power consumption. Our device is capable of fast switching with 500 ps rise time and 1.7 ns fall time, and possesses a total on-chip power dissipation of only 0.015 mW when operated at 1 MHz modulation, and an insertion loss of 0.15 dB for each modulator and an on-chip extinction ratio of -34 dB for both cross and bar routes.

physics.optics↗
arXiv2022

On-chip single-mode thin film lithium niobate laser based on Sagnac loop reflectors

We demonstrate an on-chip single-mode Er3+-doped thin film lithium niobate (Er: TFLN) laser which consists of a Fabry-Pérot (FP) resonator based on Sagnac loop reflectors (SLRs). The fabricated Er: TFLN laser has a footprint of 6.5 mmx1.5 mm with a loaded quality (Q) factor of 1.6x105 and a free spectral range (FSR) of 63 pm. We generate the single-mode laser around 1550-nm wavelength with a maximum output power of 44.7 μW and a slope efficiency of 0.18 %.

physics.optics↗
arXiv2022

Monolithically integrated active passive waveguide array fabricated on thin film lithium niobate using a single continuous photolithography process

We demonstrate a robust low-loss optical interface by tiling passive (i.e., without doping of active ions) thin film lithium niobate (TFLN) and active (i.e., doped with rare earth ions) TFLN substrates for monolithic integration of passive/active lithium niobate photonics. The tiled substrates composed of both active and passive areas allow to pattern the mask of the integrated active passive photonic device at once using a single continuous photolithography process. The interface loss of tiled substrate is measured as low as 0.26 dB. Thanks to the stability provided by this approach, a four-channel waveguide amplifier is realized in a straightforward manner, which shows a net gain of ~5 dB at 1550-nm wavelength and that of ~8 dB at 1530-nm wavelength for each channel. The robust low-loss optical interface for passive/active photonic integration will facilitate large-scale high performance photonic devices which require on-chip light sources and amplifiers.

physics.optics↗
arXiv2022

Electrically driven compact hybrid lithium niobate microring laser

We demonstrate an electrically driven compact hybrid lithium niobate microring laser by butt coupling a commercial 980-nm pump laser diode chip with a high quality Er3+-doped lithium niobate microring chip. Single mode lasing emission at 1531 nm wavelength from the Er3+-doped lithium niobate microring can be observed with the integrated 980-nm laser pumping. The compact hybrid lithium niobate microring laser occupies the chip size of 3 mmx4mmx0.5 mm. The threshold pumping laser power is 6 mW and the threshold current is 0.5 A (operating voltage 1.64 V) in the atmospheric temperature. The spectrum featuring single mode lasing with small linewidth of 0.05 nm is observed. This work explores a robust hybrid lithium niobate microring laser source which has potential applications in coherent optical communication and precision metrology.

physics.optics↗
arXiv2022

Monolithically integrated waveguide-coupled single-frequency microlaser on erbium-doped thin film lithium niobate

We overcome the difficulty in realizing a monolithic waveguide-coupled microring laser integrated on erbium-doped thin film lithium niobate (Er: TFLN) using photolithography assisted chemo-mechanical etching (PLACE) technique. We demonstrate an integrated single-frequency microring laser operating around 1531 nm wavelength. The PLACE technique, enabling integrated Er: TFLN photonics with low propagation loss, can thus be used to realize low cost mass production of monolithic on-chip microlasers with applications ranging from optical communication and photonic integrated circuit (PIC) to precision metrology and large-scale sensing.

physics.optics↗
arXiv2022

High-production-rate fabrication of low-loss lithium niobate electro-optic modulators using photolithography assisted chemo-mechanical etching (PLACE)

Integrated thin-film lithium niobate (LN) electro-optic (EO) modulators of broad bandwidth, low insertion loss, low cost and high production rate are essential elements in contemporary inter-connection industries and disruptive applications. Here, we demonstrated the design and fabri-cation of a high performance thin-film LN EO modulator using photolithography assisted chemo-mechanical etching (PLACE) technology. Our device shows a 3-dB bandwidth over 50 GHz, along with a comparable low half wave voltage-length product of 2.16 Vcm. We obtain a fiber-to-fiber insertion loss of 2.6 dB.

physics.app-ph↗
arXiv2021

A high-gain cladded waveguide amplifier on erbium doped thin-film lithium niobate fabricated using photolithography assisted chemo-mechanical etching

Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode and moderate propagation loss, gain and power scaling in such integrated micro-to-nanoscale devices prove to be more challenging compared to their bulk counterparts. In this work, stimulated by the prevalent success of double-cladding optical fiber in high-gain/power operation, a Ta2O5 cladding is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemomechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ~980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.

physics.optics↗
arXiv2021

On-chip multi-color microdisk laser on Yb3+-doped thin-film lithium niobate

We demonstrate an on-chip Yb3+-doped lithium niobate (LN) microdisk laser. The intrinsic quality factors of the fabricated Yb3+-doped LN microdisk resonator are measured up to 3.79x10^5 at 976 nm wavelength and 1.1x10^6 at 1514 nm wavelength. The multi-mode laser emissions are obtained in a band from 1020 nm to 1070 nm pumped by 984 nm laser and with the low threshold of 103 μW, resulting in a slope efficiency of 0.53% at room temperature. Furthermore, the second-harmonic frequency of pump light and the sum-frequency of the pump light and laser emissions are both generated in the on-chip Yb3+-doped LN microdisk benefited from the strong \c{hi}(2) nonlinearity of LN. These microdisk lasers are expected to contribute to the high-density integration of LNOI-based photonic chip.

physics.optics↗
arXiv2021

An electro-optically tunable microring laser monolithically integrated on lithium niobate on insulator

We demonstrate monolithic integration of an electro-optically (EO) tunable microring laser on lithium niobate on insulator (LNOI) platform. The device is fabricated by photolithography assisted chemo-mechanical etching (PLACE), and the pump laser is evanescently coupled into the erbium (Er3+) doped LN microring laser using an undoped LN waveguide mounted above the microring. The quality factor of the LN microring resonator is measured as high as 1.54x10^5 at the wavelength of 1542 nm. Lasing action can be observed at a pump power threshold below 3.5 mW using a 980 nm continuous-wave pump laser. Finally, tuning of the laser wavelength is achieved by varying the electric voltage on the microelectrodes fabricated in the vicinity of microring waveguide, showing an EO coefficient of 0.33 pm/V.

physics.optics↗
arXiv2021

On-chip integrated waveguide amplifiers on Erbium-doped thin film lithium niobate on insulator

We demonstrate on-chip light amplification with integrated optical waveguide fabricated on erbium-doped thin film lithium niobate on insulator (TFLNOI) using the photolithography assisted chemo-mechanical etching (PLACE) technique. A maximum internal net gain of 18 dB in the small-signal-gain regime is measured at the peak emission wavelength of 1530 nm for a waveguide length of 3.6 cm, indicating a differential gain per unit length of 5 dB/cm. This work paves the way to the monolithic integration of diverse active and passive photonic components on the TFLNOI platform.

physics.optics↗