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arXiv · 2405.16583

An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW

Rui Bao·Zhiwei Fang·Jian Liu·Zhaoxiang Liu·Jinming Chen·Min Wang·Rongbo Wu·Haisu Zhang·Ya Cheng
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Abstract

We demonstrate high-power thin film lithium niobate (TFLN) erbium-doped waveguide amplifier (EDWA) with a maximum on-chip output power of 113 mW and a gain of 16 dB. The on-chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1x1 cm2. Particularly, we connect segmented LMA waveguides with waveguide tapers to achieve on-chip mode conversion which maintains single-mode propagation all over the EDWA even at the waveguide bends. The design leads to significant increase of the amplified signal power by orders of magnitude and will open an avenue for applications such as on-chip high-power lasers and amplifiers system.

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Rui Bao, Zhiwei Fang, Jian Liu, Zhaoxiang Liu, Jinming Chen, Min Wang, Rongbo Wu, Haisu Zhang, Ya Cheng. 2024-05-26. An erbium-doped waveguide amplifier on thin film lithium niobate with an output power exceeding 100 mW. https://arxiv.org/abs/2405.16583

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