arXiv subjects

Rui Ning Wang

Publications and source records attributed to Rui Ning Wang.

At least 37 records · Page 2Linked to original sources

arXiv2022

Tightly confining lithium niobate photonic integrated circuits and lasers

Photonic integrated circuits are indispensible for data transmission within modern datacenters and pervade into multiple application spheres traditionally limited for bulk optics, such as LiDAR and biosensing. Of particular interest are ferroelectrics such as Lithium Niobate, which exhibit a large electro-optical Pockels effect enabling ultrafast and efficient modulation, but are difficult to process via dry etching . For this reason, etching tightly confining waveguides - routinely achieved in silicon or silicon nitride - has not been possible. Diamond-like carbon (DLC) was discovered in the 1950s and is a material that exhibits an amorphous phase, excellent hardness, and the ability to be deposited in nano-metric thin films. It has excellent thermal, mechanical, and electrical properties, making it an ideal protective coating. Here we demonstrate that DLC is also a superior material for the manufacturing of next-generation photonic integrated circuits based on ferroelectrics, specifically Lithium Niobate on insulator (LNOI). Using DLC as a hard mask, we demonstrate the fabrication of deeply etched, tightly confining, low loss photonic integrated circuits with losses as low as 5.6 dB/m. In contrast to widely employed ridge waveguides, this approach benefits from a more than 1 order of magnitude higher area integration density while maintaining efficient electro-optical modulation, low loss, and offering a route for efficient optical fiber interfaces. As a proof of concept, we demonstrate a frequency agile hybrid integrated III-V Lithium Niobate based laser with kHz linewidth and tuning rate of 0.7 Peta-Hertz per second with excellent linearity and CMOS-compatible driving voltage. Our approach can herald a new generation of tightly confining ferroelectric photonic integrated circuits.

physics.optics↗

arXiv2022

Dissipative solitons and switching waves in dispersion folded Kerr cavities

We theoretically and experimentally investigate the formation of dissipative coherent structures in Kerr nonlinear optical microresonators, whose integrated dispersion exceeds the free-spectral range. We demonstrate that the presence of any periodic modulation along the resonator's circumference, such as periodically varying dispersion, can excite higher-order comb structures. We explore the outcomes of coherent microcomb generation in both cases of anomalous and normal dispersion. We are able to access this regime in microresonators via the high peak power of synchronous pulse-driving. For solitons in anomalous dispersion, we observe the formation of higher-order phase-matched dispersive waves (`Kelly-like' sidebands), where the folded dispersion crosses the frequency comb grid. In normal dispersion, we see the coexistence of switching wave fronts with Faraday instability-induced period-doubling patterns, manifesting as powerful satellite microcombs highly separated either side of the core microcomb while sharing the same repetition rate. This regime of dispersion-modulated phase matching opens a dimension of Kerr cavity physics and microcomb generation, particularly for the spectral extension and tuneability of microcombs in normal dispersion.

physics.optics↗

arXiv2022

A photonic integrated circuit based erbium-doped amplifier

Erbium-doped fiber amplifiers have revolutionized long-haul optical communications and laser technology. Erbium ions could equally provide a basis for efficient optical amplification in photonic integrated circuits. However, this approach has thus far remained impractical due to insufficient output power. Here, we demonstrate a photonic integrated circuit based erbium amplifier reaching 145 mW output power and more than 30 dB small-signal gain -- on par with commercial fiber amplifiers and beyond state-of-the-art III-V heterogeneously integrated semiconductor amplifiers. We achieve this by applying ion implantation to recently emerged ultralow-loss Si3N4 photonic integrated circuits with meter-scale-length waveguides. We utilize the device to increase by 100-fold the output power of soliton microcombs, required for low-noise photonic microwave generation or as a source for wavelength-division multiplexed optical communications. Endowing Si3N4 photonic integrated circuits with gain enables the miniaturization of a wide range of fiber-based devices such as high-pulse-energy femtosecond mode-locked lasers.

physics.optics↗

arXiv2022

Near ultraviolet photonic integrated lasers based on silicon nitride

Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride (GaN) based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. Using self-injection locking to a high Q (0.4 $\times$ 10$^6$) photonic integrated microresonator we observe a phase noise reduction of the Fabry-Pérot laser at 461 nm by a factor greater than 100$\times$, limited by the device quality factor and back-reflection.

physics.optics↗

arXiv2021

Compact, spatial-mode-interaction-free, ultralow-loss, nonlinear photonic integrated circuits

Nonlinear photonics based on integrated circuits has enabled applications such as parametric amplifiers, soliton frequency combs, supercontinua, and non-reciprocal devices. Ultralow optical loss and the capability for dispersion engineering are essential, which necessitate the use of multi-mode waveguides. Despite that rich interaction among different spatial waveguide eigenmodes can give rise to novel nonlinear phenomena, spatial mode interaction is typically undesired as it increases optical loss, perturbs local dispersion profile, and impedes soliton formation. Adiabatic bends, such as Euler bends whose curvature varies linearly with their path length, have been favoured to suppress spatial mode interaction. Adiabatic bends can essentially connect any two waveguide segments with adiabatic mode conversion, thus efficiently avoid mode mixing due to mode mismatch. However, previous works lack quantitative measurement data and analysis to fairly evaluate the adiabaticity, and are not based on photonic integrated circuits with tight optical confinement and optical losses of few dB/m. Here, we adapt, optimize, and implement Euler bends to build compact racetrack microresonators based on ultralow-loss, multi-mode, silicon nitride photonic integrated circuits. The racetrack microresonators feature a small footprint of only 0.21 mm^2 for 19.8 GHz FSR. We quantitatively investigate the suppression of spatial mode interaction in the racetrack microresonators with Euler bends. We show that the optical loss rate (15.5 MHz) is preserved, on par with the mode interaction strength (25 MHz). This results in an unperturbed microresonator dispersion profile. We further demonstrate single soliton of 19.8 GHz repetition rate. The optimized Euler bends and racetrack microresonators can be key building blocks for integrated nonlinear photonic systems, programmable processors and photonic quantum computing.

physics.optics↗

arXiv2021

Platicon microcomb generation using laser self-injection locking

The past decade has witnessed major advances in the development of microresonator-based frequency combs (microcombs) that are broadband optical frequency combs with repetition rates in the millimeter-wave to microwave domain. Integrated microcombs can be manufactured using wafer-scale process and have been applied in numerous applications. Most of these advances are based on the harnessing of dissipative Kerr solitons (DKS) in optical microresonators with anomalous group velocity dispersion (GVD). However, microcombs can also be generated with normal GVD using dissipative localized structures that are referred to as "dark pulse", "switching wave" or "platicon". Importantly, as most materials feature intrinsic normal GVD, the requirement of dispersion engineering is significantly relaxed for platicon generation. Therefore while DKS microcombs require particular designs and fabrication processes, platicon microcombs can be readily built using standard CMOS-compatible platforms such as thin-film (i.e. typically below 300 nm) Si3N4. Yet laser self-injection locking that has been recently used to create highly compact integrated DKS microcomb modules has not been demonstrated for platicons. Here we report the first fully integrated platicon microcomb operating at a microwave-K-band repetition rate. Using laser self-injection locking of a DFB laser edge-coupled to a Si3N4 microresonator, platicons are electrically initiated and stably maintained, enabling a compact microcomb module without any complex control. We further characterize the phase noise of the platicon repetition rate and the pumping laser. The observation of self-injection-locked platicons facilitates future wide adoption of microcombs as a build-in block in standard photonic integrated architectures via commercial foundry service.

physics.optics↗

arXiv2021

Photonic chip-based continuous-travelling-wave parametric amplifier

The ability to amplify optical signals is of pivotal importance across science and technology. The development of optical amplifiers has revolutionized optical communications, which are today pervasively used in virtually all sensing and communication applications of coherent laser sources. In the telecommunication bands, optical amplifiers typically utilize gain media based on III-V semiconductors or rare-earth-doped fibers. Another way to amplify optical signals is to utilize the Kerr nonlinearity of optical fibers or waveguides via parametric processes. Such parametric amplifiers of travelling continuous wave have been originally developed in the microwave domain, and enable quantum-limited signal amplification with high peak gain, broadband gain spectrum tailored via dispersion control, and ability to enable phase sensitive amplification. Despite these advantages, optical amplifiers based on parametric gain have proven impractical in silica fibers due to the low Kerr nonlinearity. Recent advances in photonic integrated circuits have revived interest in parametric amplifiers due to the significantly increased nonlinearity in various integrated platforms. Yet, despite major progress, continuous-wave-pumped parametric amplifiers built on photonic chips have to date remained out of reach. Here we demonstrate a chip-based travelling-wave optical parametric amplifier with net signal gain in the continuous-wave regime. Using ultralow-loss, dispersion-engineered, meter-long, silicon nitride photonic integrated circuits that are tightly coiled on a photonic chip, we achieve a continuous parametric gain of 12 dB that exceeds both the on-chip optical propagation loss and fiber-chip-fiber coupling losses in the optical C-band.

physics.optics↗

arXiv2021

Ultralow-noise frequency-agile photonic integrated lasers

Low-noise lasers are of central importance in a wide variety of applications, including high spectral-efficiency coherent communication protocols, distributed fibre sensing, and long distance coherent LiDAR. In addition to low phase noise, frequency agility, that is, the ability to achieve high-bandwidth actuation of the laser frequency, is imperative for triangular chirping in frequency-modulated continuous-wave (FMCW) based ranging or any optical phase locking as routinely used in metrology. While integrated silicon-based lasers have experienced major advances and are now employed on a commercial scale in data centers, integrated lasers with sub-100 Hz-level intrinsic linewidth are based on optical feedback from photonic circuits that lack frequency agility. Here, we demonstrate a wafer-scale-manufacturing-compatible hybrid photonic integrated laser that exhibits ultralow intrinsic linewidth of 25 Hz while offering unsurpassed megahertz actuation bandwidth, with a tuning range larger than 1 GHz. Our approach uses ultralow-loss (1 dB/m) Si$_3$N$_4$ photonic microresonators, combined with aluminium nitride (AlN) or lead zirconium titanate (PZT) microelectromechanical systems (MEMS) based stress-optic actuation. Electrically driven low-phase noise lasing is attained by self-injection locking of an Indium Phosphide (InP) laser chip and only limited by fundamental thermo-refractive noise. By utilizing difference drive and apodization of the photonic chip, a flat actuation response up to 10 MHz is achieved. We leverage this capability to demonstrate a compact coherent LiDAR engine that can generate up to 800 kHz FMCW triangular optical chirp signals, requiring neither any active linearization nor predistortion compensation, and perform a 10 m optical ranging experiment, with a resolution of 12.5 cm.

physics.optics↗

arXiv2021

Magnetic-Free Silicon Nitride Integrated Optical Isolator

Integrated photonics has enabled signal synthesis, modulation and conversion using photonic integrated circuits (PIC). Many materials have been developed, among which silicon nitride (Si$_3$N$_4$) has emerged as a leading platform particularly for nonlinear photonics. Low-loss Si$_3$N$_4$ PIC has been widely used for frequency comb generation, narrow-linewidth lasers, microwave photonics, photonic computing networks, and even surface-electrode ion traps. Yet, among all demonstrated functionalities for Si$_3$N$_4$ integrated photonics, optical non-reciprocal devices, such as isolators and circulators, have not been achieved. Conventionally, they are realized based on Faraday effect of magneto-optic materials under external magnetic field. However, it has been challenging to integrate magneto-optic materials that are not CMOS-compatible and that require bulky external magnet. Here, we demonstrate a magnetic-free optical isolator based on aluminum nitride (AlN) piezoelectric modulators monolithically integrated on ultralow-loss Si$_3$N$_4$ PIC. The transmission reciprocity is broken by spatio-temporal modulation of a Si$_3$N$_4$ microring resonator with three AlN bulk acoustic wave resonators that are driven with a rotational phase. This design creates an effective rotating acoustic wave that allows indirect interband transition in only one direction among a pair of strongly coupled optical modes. Maximum of 10 dB isolation is achieved under 100 mW RF power applied to each actuator, with minimum insertion loss of 0.1 dB. The isolation remains constant over nearly 30 dB dynamic range of optical input power, showing excellent optical linearity. Our integrated, linear, magnetic-free, electrically driven optical isolator could become key building blocks for integrated lasers, chip-scale LiDAR engines, as well as optical interfaces for superconducting circuits.

physics.optics↗

arXiv2021

Laser soliton microcombs on silicon

Silicon photonics enables wafer-scale integration of optical functionalities on chip. A silicon-based laser frequency combs could significantly expand the applications of silicon photonics, by providing integrated sources of mutually coherent laser lines for terabit-per-second transceivers, parallel coherent LiDAR, or photonics-assisted signal processing. Here, we report on heterogeneously integrated laser soliton microcombs combining both InP/Si semiconductor lasers and ultralow-loss silicon nitride microresonators on monolithic silicon substrate. Thousands of devices are produced from a single wafer using standard CMOS techniques. Using on-chip electrical control of the microcomb-laser relative optical phase, these devices can output single-soliton microcombs with 100 GHz repetition rate. Our approach paves the way for large-volume, low-cost manufacturing of chip-based frequency combs for next-generation high-capacity transceivers, datacenters, space and mobile platforms.

physics.optics↗

arXiv2020

Low-loss integrated nanophotonic circuits with layered semiconductor materials

Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding.

physics.optics↗

arXiv2020

High-yield wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits

Low-loss photonic integrated circuits (PIC) and microresonators have enabled novel applications ranging from narrow-linewidth lasers, microwave photonics, to chip-scale optical frequency combs and quantum frequency conversion. To translate these results into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in fabrication of integrated Si3N4 photonics have shown that ultralow-loss, dispersion-engineered microresonators can be attained at die-level throughput. For emerging nonlinear applications such as integrated travelling-wave parametric amplifiers and mode-locked lasers, PICs of length scales of up to a meter are required, placing stringent demands on yield and performance that have not been met with current fabrication techniques. Here we overcome these challenges and demonstrate a fabrication technology which meets all these requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 million, corresponding to a linear propagation loss of 1.0 dB/m, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances and cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB/m loss in dies of only 5x5 mm size. Using a modulation response measurement self-calibrated via the Kerr nonlinearity, we reveal that, strikingly, the intrinsic absorption-limited Q factor of our Si3N4 microresonators exceeds a billion. Transferring the present Si3N4 photonics technology to standard commercial foundries, and merging it with silicon photonics using heterogeneous integration technology, will significantly expand the scope of today's integrated photonics and seed new applications.

physics.app-ph↗

arXiv2020

Emergent Nonlinear Phenomena in a Driven Dissipative Photonic Dimer

Emergent phenomena are ubiquitous in nature and refer to spatial, temporal, or spatiotemporal pattern formation in complex nonlinear systems driven out of equilibrium that is not contained in the microscopic descriptions at the single-particle level. Examples range from novel phases of matter in both quantum and classical many-body systems, to galaxy formation or neural dynamics. Two characteristic phenomena are length scales that exceed the characteristic interaction length and spontaneous symmetry breaking. Recent advances in integrated photonics indicate that the study of emergent phenomena is possible in complex coupled nonlinear optical systems. Here we demonstrate that out-of-equilibrium driving of a strongly coupled ("dimer") pair of photonic integrated Kerr microresonators, which at the "single-particle" (i.e. individual resonator) level generate well understood dissipative Kerr solitons, exhibit emergent nonlinear phenomena. By exploring the dimer phase diagram, we find unexpected and therefore unpredicted regimes of soliton hopping, spontaneous symmetry breaking, and periodically emerging (in)commensurate dispersive waves. These phenomena are not included in the single-particle description and related to the parametric frequency conversion between hybridized supermodes. Moreover, by controlling supermode hybridization electrically, we achieve wide tunability of spectral interference patterns between dimer solitons and dispersive waves. Our findings provide the first critical step towards the study of emergent nonlinear phenomena in soliton networks and multimode lattices.

nlin.PS↗

arXiv2020

Monolithic piezoelectric control of soliton microcombs

High-speed laser frequency actuation is critical in all applications employing lasers and frequency combs, and is prerequisite for phase locking, frequency stabilization and stability transfer among multiple optical carriers. Soliton microcombs have emerged as chip-scale, broadband and low-power-consumption frequency comb sources.Yet, integrated microcombs relying on thermal heaters for on-chip actuation all exhibit only kilohertz actuation bandwidth. Consequently, high-speed actuation and locking of microcombs have been attained only with off-chip bulk modulators. Here, we present high-speed microcomb actuation using integrated components. By monolithically integrating piezoelectric AlN actuators on ultralow-loss Si3N4 photonic circuits, we demonstrate voltage-controlled soliton tuning, modulation and stabilization. The integrated AlN actuators feature bi-directional tuning with high linearity and low hysteresis, operate with 300 nW power and exhibit flat actuation response up to megahertz frequency, significantly exceeding bulk piezo tuning bandwidth. We use this novel capability to demonstrate a microcomb engine for parallel FMCW LiDAR, via synchronously tuning the laser and microresonator. By applying a triangular sweep at the modulation rate matching the frequency spacing of HBAR modes, we exploit the resonant build-up of bulk acoustic energy to significantly lower the required driving to a CMOS voltage of only 7 Volts. Our approach endows soliton microcombs with integrated, ultralow-power-consumption, and fast actuation, significantly expanding the repertoire of technological applications.

physics.app-ph↗

arXiv2019

Nanophotonic soliton-based microwave synthesizers

Microwave photonic technologies, which upshift the carrier into the optical domain to facilitate the generation and processing of ultrawide-band electronic signals at vastly reduced fractional bandwidths, have the potential to achieve superior performance compared to conventional electronics for targeted functions. For microwave photonic applications such as filters, coherent radars, subnoise detection, optical communications and low-noise microwave generation, frequency combs are key building blocks. By virtue of soliton microcombs, frequency combs can now be built using CMOS compatible photonic integrated circuits, operated with low power and noise, and have already been employed in system-level demonstrations. Yet, currently developed photonic integrated microcombs all operate with repetition rates significantly beyond those that conventional electronics can detect and process, compounding their use in microwave photonics. Here we demonstrate integrated soliton microcombs operating in two widely employed microwave bands, X- and K-band. These devices can produce more than 300 comb lines within the 3-dB-bandwidth, and generate microwave signals featuring phase noise levels below 105 dBc/Hz (140 dBc/Hz) at 10 kHz (1 MHz) offset frequency, comparable to modern electronic microwave synthesizers. In addition, the soliton pulse stream can be injection-locked to a microwave signal, enabling actuator-free repetition rate stabilization, tuning and microwave spectral purification, at power levels compatible with silicon-based lasers (<150 mW). Our results establish photonic integrated soliton microcombs as viable integrated low-noise microwave synthesizers. Further, the low repetition rates are critical for future dense WDM channel generation schemes, and can significantly reduce the system complexity of photonic integrated frequency synthesizers and atomic clocks.

physics.optics↗

arXiv2019

Integrated turnkey soliton microcombs operated at CMOS frequencies

While soliton microcombs offer the potential for integration of powerful frequency metrology and precision spectroscopy systems, their operation requires complex startup and feedback protocols that necessitate difficult-to-integrate optical and electrical components. Moreover, CMOS-rate microcombs, required in nearly all comb systems, have resisted integration because of their power requirements. Here, a regime for turnkey operation of soliton microcombs co-integrated with a pump laser is demonstrated and theoretically explained. Significantly, a new operating point is shown to appear from which solitons are generated through binary turn-on and turn-off of the pump laser, thereby eliminating all photonic/electronic control circuitry. These features are combined with high-Q $Si_3N_4$ resonators to fully integrate into a butterfly package microcombs with CMOS frequencies as low as 15 GHz, offering compelling advantages for high-volume production.

physics.optics↗

arXiv2019

Observation of stimulated Brillouin scattering in silicon nitride integrated waveguides

Silicon nitride (Si3N4) has emerged as a promising material for integrated nonlinear photonics and has been used for broadband soliton microcombs and low-pulse-energy supercontinuum generation. Therefore understanding all nonlinear optical properties of Si3N4 is important. So far, only stimulated Brillouin scattering (SBS) has not been reported. Here we observe, for the first time, backward SBS in fully cladded Si3N4 waveguides. The Brillouin gain spectrum exhibits an unusual multi-peak structure resulting from hybridization with with high-overtone bulk acoustic resonances (HBARs) of the silica cladding. The reported intrinsic Si3N4 Brillouin gain at 25 GHz is estimated as 7x10^-13 m/W. Moreover, the magnitude of the Si3N4 photoelastic constant is estimated as |p12| = 0.047 +/- 0.004. Since SBS imposes an optical power limitation for waveguides, our results explain the capability of Si3N4 to handle high optical power, central for integrated nonlinear photonics.

physics.optics↗

arXiv2019

Packaged photonic chip-based soliton microcomb using an ultralow-noise laser

Photonic chip-based soliton microcombs have shown rapid progress and have already been used in many system-level applications, including coherent communications, astrophysical spectrometer calibration and ultrafast ranging. While there has been substantial progress in realizing soliton microcombs that rely on compact laser diodes, culminating in devices that only utilize a semiconductor amplifier or a self-injection-locked laser as a pump source, accessing and generating single soliton states with electronically detectable line rates from a compact laser module has remained challenging. Here we demonstrate a current-initiated, $\mathrm{Si_3N_4}$ chip-based, 99-GHz soliton microcomb driven directly by an ultra-compact, low-noise laser. This approach does not require any fast laser tuning mechanism, and single soliton states can be accessed by changing the current of the laser diode. A simple, yet reliable, packaging technique has been developed to demonstrate the viability of such a microcomb system in field-deployable applications.

physics.app-ph↗