arXiv subjects

Run-Wei Li

Publications and source records attributed to Run-Wei Li.

At least 19 recordsLinked to original sources

arXiv2026

Piezomagnetic Switching of Nonvolatile Antiferromagnetic States

Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of antiferromagnetic states remains a key challenge [2, 3]. Here, we propose a piezomagnetic writing scheme in triangular Mn3Ir-based memory cells, with readout achieved via the exchange bias effect. Our approach enables deterministic and nonvolatile switching of the antiferromagnetic states, which exhibit exceptional robustness against external perturbations. The switching mechanism is ascribed to piezomagnetic effect of Mn3Ir combined with the interfacial Dzyaloshinskii-Moriya interaction at the antiferromagnet-ferromagnet interface. This scheme overcomes the speed limitations imposed by conventional isothermal methods based on isothermal crystallization mechanism [4]. Our findings highlight the potential of piezomagnetic effects in designing advanced spintronic devices, providing an efficient pathway for manipulating antiferromagnetic states and developing energy-efficient memory technology.

cond-mat.mtrl-sci↗

arXiv2025

Flexible orbital torque device with ultralow switching current

Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT device based on a mica/SrRuO3(SRO)/CoPt heterostructure. We measure a large torque efficiency of -0.31, which originates from the significant orbital Hall effect in the SRO layer. Leveraging the low thermal conductivity of the mica substrate, a thermally-assisted switching mechanism is activated, enabling an ultralow threshold current density of 9.2x109 A/m2. This value represents a 90% reduction compared to conventional spin-torque devices and a 52% reduction against its rigid counterpart on a SrTiO3 substrate. The superior performances is well-maintained after 103 bending cycles, conforming its exceptional flexibility and durability. Our work pioneers the development of flexible OT devices, showcasing a viable path toward next-generation, low-power wearable spintronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Intrinsic Strain-Driven Topological Evolution in SrRuO3 via Flexural Strain Engineering

Strain engineering offers a powerful route to tailor topological electronic structures in correlated oxides, yet conventional epitaxial strain approaches introduce extrinsic factors such as substrate-induced phase transitions and crystalline quality variations, which makes the unambiguous identification of the intrinsic strain effects challenging. Here, we develop a flexural strain platform based on van der Waals epitaxy and flexible micro-fabrication, enabling precise isolation and quantification of intrinsic strain effects on topological electronic structures in correlated oxides without extrinsic interference. Through strain-dependent transport measurements of the Weyl semimetal SrRuO3, we observed a significant enhancement of anomalous Hall conductivity by 21% under a tiny strain level of 0.2%, while longitudinal resistivity remains almost constant -- a hallmark of intrinsic topological response. First-principles calculations reveal a distinct mechanism where strain-driven non-monotonic evolution of Weyl nodes across the Fermi level, exclusively governed by lattice constant modulation, drives the striking AHC behavior. Our work not only highlights the pivotal role of pure lattice strain in topological regulation but also establishes a universal platform for designing flexible topological oxide devices with tailored functionalities.

cond-mat.mtrl-sci↗

arXiv2025

Insulator-to-Metal Transition via Magnetic Reconstruction at Oxide Interfaces

Ultrathin two-dimensional (2D) electronic systems at the interfaces of layered materials are highly desirable platforms for exploring of novel quantum phenomena and developing advanced device applications. Here, we investigate ultrathin heterostructures composed of SrIrO3 (SIO) and SrRuO3 (SRO) layers to uncover their emergent properties. Strikingly, despite the fact that both individual layers are antiferromagnetic insulators, the interfaced heterostructure exhibits emergent metallicity. Through transport measurements, magnetic characterization, and angle-resolved photoemission spectroscopy (ARPES), we analyze the underlying mechanisms governing this insulator-to-metal transition. Our findings reveal that the transition is driven by interface-induced magnetic reconstruction, which is further corroborated by density functional theory (DFT) calculations. The staggered Dzyaloshinskii-Moriya interaction at the SIO/SRO interface is identified as the key driving force for this spin reorganization, as it stabilizes ferromagnetism in the coupled antiferromagnetic insulating layers. These findings highlight the significant potential of engineering interfacial magnetic interactions as a powerful approach to generate and control emergent electronic properties, paving the way for novel functionalities that are unattainable in individual ultrathin films.

cond-mat.mes-hall↗

arXiv2024

Unveiling the anisotropy of linear and nonlinear charge-spin conversion in Weyl semimetal TaIrTe4

In Weyl semimetals, the nonlinear planar Hall effect (NPHE) and spin-orbit torque (SOT) are prominent manifestations of nonlinear and linear charge-spin conversion, respectively. However, simultaneous investigations of these phenomena within a single material system are scarce, limiting our understanding of their intrinsic connection and underlying mechanisms. Here, we report the first simultaneous observation of NPHE and SOT in a TaIrTe4/Py heterostructure. By employing harmonic Hall measurements and developing a magnetic field-dependent method, we successfully separated the contributions from NPHE, field-like SOT, and damping-like SOT, enabling accurate characterization of both linear and nonlinear charge-spin conversion properties. Our experiments revealed significant anisotropy along the [100] and [010] crystallographic directions of TaIrTe4, with stronger nonlinear responses and field-like SOT along the [100] direction, and larger damping-like SOT along the [010] direction. The distinct directional dependence of these phenomena provides new insights into the interplay between surface and bulk contributions to charge-spin conversion in Weyl semimetals. These findings enhance our understanding of anisotropic charge-spin conversion mechanisms in Weyl semimetals, which may inform future research and development of spintronic devices based on topological materials.

cond-mat.mtrl-sci↗

arXiv2024

Manipulating Momentum-Space and Real-Space Topological States in Metallic Strontium Ruthenate Ultrathin Films

SrRuO3, a 4d transition metal oxide, has gained significant interest due to its topological states in both momentum space (Weyl points) and real space (skyrmions). However, probing topological states in ultrathin SrRuO3 faces challenges such as the metal-insulator transition and questioned existence of skyrmions due to possible superposition of opposite anomalous Hall effect (AHE) signals. To address these issues, we investigate ultrathin SrRuO3/SrIrO3 heterostructures and their AHE and topological Hall effect (THE). Our results reveal metallized ultrathin SrRuO3 down to the monolayer limit with an AHE signal. ARPES measurements confirm the metallic and topological band structure of ultrathin SrRuO3. Furthermore, the AHE sign remains negative over a wide thickness range, where THE is still observed. This observation excludes the two-channel explanation of THE and provides evidence for the existence of skyrmions in ultrathin SrRuO3.

cond-mat.mtrl-sci↗

arXiv2024

Sliding Flexoelectricity in Two-Dimensional van der Waals Systems

Two-dimensional sliding ferroelectrics, with their unique stacking degrees of freedom, offer a different approach to manipulate polarization by interlayer sliding. Bending sliding ferroelectrics inevitably leads to interlayer sliding motion, thus altering stacking orders and polarization properties. Here, by using machine-learning force field, we investigate the effects of bending deformation on geometries, stackings, energies, and polarizations in sliding ferroelectric bilayer h-BN and 3R-MoS2. We predict that bent ferroelectric bilayer forms irreversible kinks instead of arc when the bending angle exceeds a critical value. We demonstrate that the kinks originate from the competition between bending energy and interlayer van der Waals energy. The kink contains a ferroelectric domain wall that reverses the polarization, effectively inducing a flexoelectric effect. We term this phenomenon "sliding flexoelectricity" to distinguish it from conventional strain-gradient-induced flexoelectricity.

cond-mat.mtrl-sci↗

arXiv2024

A compositional ordering-driven morphotropic phase boundary in ferroelectric solid solutions

Ferroelectric solid solutions usually exhibit giant dielectric response and high piezoelectricity in the vicinity of the morphotropic phase boundary (MPB), where the structural phase transitions between the rhombohedral and the tetragonal phases as a result of the composition or strain variation. Here, we propose a compositional ordering-driven MPB in the specified compositional solid solutions. By preforming machine-learning potential based molecular dynamics simulations on lead zirconate titanate, we find a phase transition from the rhombohedral to tetragonal phase with the decrease of compositional ordering, leading to the MPB on temperature-ordering phase diagram. The compositional ordering-driven MPB can enhances the piezoelectricity with a magnitude comparable to that at the composition-driven MPB. Finally, we demonstrate that the mechanism of high piezoelectricity is polarization rotation driven by external field. This work provides an additional degree of freedom, compositional ordering, to design the high-performance piezoelectric materials.

cond-mat.mtrl-sci↗

arXiv2024

Cooperatively Modulating Magnetic Anisotropy and Colossal Magnetoresistance via Atomic-Scale Buffer Layers in Highly Strained La0.7Sr0.3MnO3 Films

Simultaneous control of magnetic anisotropy and magnetoresistance, especially with atomic scale precision, remains a pivotal challenge for realizing advanced spintronic functionalities. Here we demonstrate cooperative continuous control over both magnetoresistance and magnetic anisotropy in highly strained La0.7Sr0.3MnO3 (LSMO) thin films. By inserting varying perovskite buffer layers, compressively strained LSMO films transition from a ferromagnetic insulator with out-of-plane magnetic anisotropy to a metallic state with in-plane anisotropy. Atomic-scale buffer layer insertion enables remarkably acute, precise control to sharply modulate this magnetic phase transformation. A gigantic 10,000% modulation of the colossal magnetoresistance (CMR) and an exceptionally sharp transition from out-of-plane to in-plane magnetic anisotropy are attained in just a few contiguous layers. These atomic-scale correlations among electronic, magnetic, and structural order parameters yield flexible multifunctional control promising for next-generation oxide spintronics.

cond-mat.mtrl-sci↗

arXiv2023

Ultra-conformable Liquid Metal Particle Monolayer on Air/water Interface for Substrate-free E-tattoo

Gallium-based liquid metal is getting increased attention in conformal flexible electronics for its high electrical conductivity, intrinsic deformability and biocompatibility. A series of flexible devices are developed based on the micro-particles of liquid metal. But it is still challenging to fabricate conformal liquid metal film with a large area and high uniformity. Interfacial self-assembly is a competitive candidate method. Traditional interfacial self-assembly methods have difficulties assembling liquid metal particles because the floating state of the high-density microparticles could be easily disturbed by gravity. Here, we realized the multi-size universal self-assembly (MUS) for liquid metal particles with various diameters (0~500μm). By introducing a simple z-axis undisturbed interfacial material releasing strategy, the interference of gravitational energy on the stability of floating particles is avoided. Benefits from this, the ultra-conformable monolayer film, with large area (>100 cm2) and high floating yield (50%~90%), can be fabricated by liquid metal particles. Furthermore, the monolayer can be conformally transferred to any interesting complex surface such as human skin and plant leaf, to fabricate substrate-free flexible devices. Without interference from the mechanical response of traditional substrate, the liquid metal e-tattoo is more user-friendly and can realize feel-less continuous monitoring.

physics.app-ph↗

arXiv2022

Room temperature spin-orbit torque efficiency and magnetization switching in SrRuO3-based heterostructures

Spin-orbit torques (SOTs) from transition metal oxides (TMOs) in conjunction with magnetic materials have recently attracted tremendous attention for realizing high-efficient spintronic devices. SrRuO3 is a promising candidate among TMOs due to its large and tunable SOT-efficiency as well as high conductivity and chemical stability. However, a further study for benchmarking the SOT-efficiency and realizing SOT-driven magnetization switching in SrRuO3 is still highly desired so far. Here, we systematically study the SOT properties of high-quality SrRuO3 thin film heterostructuring with different magnetic alloys of both IMA and PMA configuration by the harmonic Hall voltage technique. Our results indicate that SrRuO3 possesses pronounced SOT-efficiency of about 0.2 at room temperature regardless of the magnetic alloys, which is comparable to typical heavy metals (HMs). Furthermore, we achieve SOT-driven magnetization switching with a low threshold current density of 3.8x10^10 A/m^2, demonstrating the promising potential of SrRuO3 for practical devices. By making a comprehensive comparison with HMs, our work unambiguously benchmarks the SOT properties and concludes the advantages of SrRuO3, which may bring more diverse choices for SOT applications by utilizing hybrid-oxide/metal and all-oxide systems.

cond-mat.mtrl-sci↗

arXiv2022

Anisotropic linear and nonlinear charge-spin conversion in topological semimetal SrIrO3

Over the past decade, utilizing spin currents in the linear response of electric field to manipulate magnetization states via spin-orbit torques (SOTs) is one of the core concepts for realizing a multitude of spintronic devices. Besides the linear regime, recently, nonlinear charge-spin conversion under the square of electric field has been recognized in a wide variety of materials with nontrivial spin textures, opening an emerging field of nonlinear spintronics. Here, we report the investigation of both linear and nonlinear charge-spin conversion in one single topological semimetal SrIrO3(110) thin film that hosts strong spin-orbit coupling and nontrivial spin textures in the momentum space. In the nonlinear regime, the observation of crystalline direction dependent response indicates the presence of anisotropic surface states induced spin-momentum locking near the Fermi level. Such anisotropic spin textures also give rise to spin currents in the linear response regime, which mainly contributes to the fieldlike SOT component. Our work demonstrates the power of combination of linear and nonlinear approaches in understanding and utilizing charge-spin conversion in topological materials.

cond-mat.mtrl-sci↗

arXiv2022

Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic

Magnetic insulators with strong perpendicular magnetic anisotropy (PMA) play a key role in exploring pure spin current phenomena and developing ultralow-dissipation spintronic devices, thereby it is highly desirable to develop new material platforms. Here we report epitaxial growth of La2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with different crystalline orientations fabricated by sequential two-target ablation process using pulsed laser deposition. The LSMIO films exhibit high crystalline quality with homogeneous mixture of LSMO and SIO at atomic level. Ferrimagnetic and insulating transport characteristics are observed, with the temperature-dependent electric resistivity well fitted by Mott variable-range-hopping model. Moreover, the LSMIO films show strong PMA. Through further constructing all perovskite oxide heterostructures of the ferrimagnetic insulator LSMIO and a strong spin-orbital coupled SIO layer, pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Hall effect (SH-AHE) were observed. These results illustrate the potential application of the ferrimagnetic insulator LSMIO in developing all-oxide ultralow-dissipation spintronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Lateral modulation of magnetic anisotropy in tricolor 3d-5d oxide superlattices

Manipulating magnetic anisotropy (MA) purposefully in transition metal oxides (TMOs) enables the development of oxide-based spintronic devices with practical applications. Here, we report a pathway to reversibly switch the lateral magnetic easy-axis via interfacial oxygen octahedral coupling (OOC) effects in 3d-5d tricolor superlattices, i.e. [SrIrO3,mRTiO3,SrIrO3,2La0.67Sr0.33MnO3]10 (RTiO3: SrTiO3 and CaTiO3). In the heterostructures, the anisotropy energy (MAE) is enhanced over one magnitude to ~106 erg/cm3 compared to La0.67Sr0.33MnO3 films. Moreover, the magnetic easy-axis is reversibly reoriented between (100)- and (110)-directions by changing the RTiO3. Using first-principles density functional theory calculations, we find that the SrIrO3 owns a large single-ion anisotropy due to its strong spin-orbit interaction. This anisotropy can be reversibly controlled by the OOC, then reorient the easy-axis of the superlattices. Additionally, it enlarges the MAE of the films via the cooperation with a robust orbital hybridization between the Ir and Mn atoms. Our results indicate that the tricolor superlattices consisting of 3d and 5d oxides provide a powerful platform to study the MA and develop oxide-based spintronic devices.

cond-mat.str-el↗

arXiv2021

Cooperative control of perpendicular magnetic anisotropy via crystal structure and orientation in single-crystal flexible SrRuO3 membranes

Flexible magnetic materials with robust and controllable perpendicular magnetic anisotropy (PMA) are highly desirable for developing flexible high-performance spintronic devices. However, it is still challenge to fabricate PMA films through current techniques of direct deposition on polymers. Here, we report a facile method for synthesizing single-crystal freestanding SrRuO3 (SRO) membranes with controlled crystal structure and orientation using water-soluble Ca3-xSrxAl2O6 sacrificial layers. Through cooperative effect of crystal structure and orientation engineering, flexible SrRuO3 membranes reveal highly tunable magnetic anisotropy from in-plane to our-of-plane with a remarkable PMA energy of 7.34*106 erg/cm3. Based on the first-principles calculations, it reveals that the underlying mechanism of PMA modulation is intimately correlated with structure-controlled Ru 4d-orbital occupation, as well as the spin-orbital matrix element differences, dependent on the crystal orientation. In addition, there are no obvious changes of the magnetism after 10,000 bending cycles, indicating an excellent magnetism reliability in the prepared films. This work provides a feasible approach to prepare the flexible oxide films with strong and controllable PMA.

cond-mat.str-el↗

arXiv2021

Isostructural Metal-Insulator Transition Driven by Dimensional-Crossover in SrIrO3 Heterostructures

Dimensionality reduction induced metal-insulator transitions in oxide heterostructures are usually coupled with structural and magnetic phase transitions, which complicate the interpretation of the underlying physics. Therefore, achieving isostructural MIT is of great importance for fundamental physics and even more for applications. Here, we report an isostructural metal-insulator transition driven by dimensional-crossover in spin-orbital coupled SrIrO3 films. By using in-situ pulsed laser deposition and angle-resolved photoemission spectroscopy, we synthesized and investigated the electronic structure of SrIrO3 ultrathin films with atomic-layer precision. Through inserting orthorhombic CaTiO3 buffer layers, we demonstrate that the crystal structure of SrIrO3 films remains bulk-like with similar oxygen octahedra rotation and tilting when approaching the ultrathin limit. We observe that a dimensional-crossover metal-insulator transition occurs in isostructural SrIrO3 films. Intriguingly, we find the bandwidth of Jeff=3/2 states reduces with lowering the dimensionality and drives the metal-insulator transition. Our results establish a bandwidth controlled metal-insulator transition in the isostructural SrIrO3 thin films.

cond-mat.str-el↗

arXiv2021

Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor

Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is 4 orders of magnitude larger than that in conventional antiferromagnetic alloys. Combined magnetization, resistivity, and theoretical analysis reveal that the colossal AMR effect is attributed to a novel mechanism of vector-field tunable band structure, rather than the conventional spin-orbit coupling mechanism. Moreover, it is revealed that the strong hybridization between orbitals of Eu-layer with localized spin and Te-layer with itinerant carriers is extremely important for the large AMR effect. Our results suggest a new direction towards exploring AFM materials with prominent magnetotransport properties, which creates an unprecedented opportunity for AFM spintronics applications.

cond-mat.mtrl-sci↗

arXiv2018

Anomalous Hall magnetoresistance in a ferromagnet

The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall effect also leads to spin accumulation at the surfaces perpendicular to both the current and magnetization direction. Here we experimentally demonstrate that the spin accumulation, subsequent spin backflow, and spin-charge conversion can give rise to a different type of spin current related magnetoresistance, dubbed here as the anomalous Hall magnetoresistance, which has the same angular dependence as the recently discovered spin Hall magnetoresistance. The anomalous Hall magnetoresistance is observed in four types of samples: co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnx and Pt multilayer, Fe1-xMnx with x = 0.17 to 0.65 and Fe, and analyzed using the drift-diffusion model. Our results provide an alternative route to study charge-spin conversion in ferromagnets and to exploit it for potential spintronic applications.

cond-mat.mtrl-sci↗