arXiv subjects

S. A. Tarasenko

Publications and source records attributed to S. A. Tarasenko.

100 records · Page 6Linked to original sources

arXiv2003

Tunneling spin-galvanic effect

It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons.

cond-mat.mes-hall↗

arXiv2003

Spin-galvanic effect due to optical spin orientation

Under oblique incidence of circularly polarized infrared radiation the spin-galvanic effect has been unambiguously observed in (001)-grown $n$-type GaAs quantum well (QW) structures in the absence of any external magnetic field. Resonant inter-subband transitions have been obtained making use of the tunability of the free-electron laser FELIX. It is shown that a helicity dependent photocurrent along one of the $<110>$ axes is predominantly contributed by the spin-galvanic effect while that along the perpendicular in-plane axis is mainly due to the circular photogalvanic effect. This strong non-equivalence of the [110] and [1$\bar{1}$0] directions is determined by the interplay between bulk and structural inversion asymmetries. A microscopic theory of the spin-galvanic effect for direct inter-subband optical transitions has been developed being in good agreement with experimental findings.

cond-mat↗

arXiv2003

Resonant inversion of the circular photogalvanic effect in n-doped quantum wells

We show that the sign of the circular photogalvanic effect can be changed by tuning the radiation frequency of circularly polarized light. Here resonant inversion of the photogalvanic effect has been observed for direct inter-subband transition in n-type GaAs quantum well structures. This inversion of the photon helicity driven current is a direct consequence of the lifting of the spin degeneracy due to k-linear terms in the Hamiltonian in combination with energy and momentum conservation and optical selection rules.

cond-mat↗

arXiv2003

Optical Spin Orientation under Inter- and Intra-Subband Transitions in QWs

It is shown that absorption of circularly polarized infrared radiation achieved by inter-subband and intra-subband (Drude-like) transitions results in a monopolar spin orientation of free carriers. The monopolar spin polarization in zinc-blende-based quantum wells (QWs) is demonstrated by the observation of the spin-galvanic and circular photogalvanic effects. It is shown that monopolar spin orientation in n-type QWs becomes possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account.

cond-mat↗

arXiv2003

Spin-Galvanic Effect in Quantum Wells

It is shown that a homogeneous non-equlibrium spin-polarization in semiconductor heterostructures results in an electric current. The microscopic origin of the effect is an inherent asymmetry of spin-flip scattering in systems with lifted spin degeneracy caused by k-linear terms in the Hamiltonian.

cond-mat↗

arXiv2003

Monopolar Optical Orientation of Electronic Spins in Semiconductors

It is shown that absorption of circularly polarized infrared radiation due to intraband (Drude-like) transitions in n-type bulk semiconductors and due to intra-subband or inter-subband transitions in quantum well (QW) structures results in a monopolar spin orientation of free electrons. Spin polarization in zinc-blende-structure based QWs is demonstrated by the observation of the spin-galvanic and the circular photogalvanic effects. The monopolar spin orientation in n-type materials is shown to be possible if an admixture of valence band states to the conduction band wave function and the spin-orbit splitting of the valence band are taken into account.

cond-mat↗

arXiv2003

Spin-dependent tunnelling through a symmetric barrier

The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The $k^3$ Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.

cond-mat.mes-hall↗

arXiv2002

Interference of Spin Splittings in Magneto-Oscillation Phenomena in Two-Dimensional Systems

The spin splitting caused by the terms linear in wavevector in the effective Hamiltonian containing can give rise to the new magneto-oscillation phenomena in two-dimensional systems. It is shown that the joint action of the spin-dependent contributions due to the heterostructure asymmetry and to the lack of inversion center in the bulk material suppresses beats that arise in the magneto-oscillation phenomena in the presence of the terms of only one of these types.

cond-mat.mes-hall↗

arXiv2002

Spin orientation of two-dimensional electron gas under intraband optical pumping

The theory of spin orientation of two-dimensional (2D) electron gas has been developed for intrasubband indirect optical transitions. The monopolar optical orientation of electrons in the conduction band is caused by the indirect scattering with virtual intermediate states in the valence band and allowance for selection rules for interband transitions. The considered mechanism of optical orientation is shown to be in an inherent relation with the special Elliot-Yafet mechanism of electron spin relaxation induced by virtual interband scattering.

cond-mat.mes-hall↗

arXiv2001

Effect of intersubband scattering on weak localization in 2D systems

The theory of weak localization is generalized for multilevel 2D systems taking into account intersubband scattering. It is shown that weak intersubband scattering which is negligible in a classical transport, affects strongly the weak-localization correction to conductivity. The anomalous magnetoresistance is calculated in the whole range of classically low magnetic fields. This correction to conductivity is shown to depend strongly on the ratios of occupied level concentrations. It is demonstrated that at relatively low population of the excited subband, it is necessary to use the present theory because the high-field limit asimptotics is shown to be achieved only in classical magnetic fields.

cond-mat.mes-hall↗