arXiv subjects

S. Amitonov

Publications and source records attributed to S. Amitonov.

2 recordsLinked to original sources

arXiv2024

Persistence of Entangled States and High Fidelity Quantum Gate Operations in Si/SiGe Spin Qubits at High Temperature

We characterize single- and two-qubit operations in a SiGe quantum dot array, from the perspective of its quantum information processing capabilities. The analysis includes rigorous randomized benchmarking of single- and two-qubit gates, SPAM characterization, and Bell's state tomography, which are all basic functionality required for universal quantum computation. To assess compatibility with integrated cryogenic electronics, we evaluate qubit performance at 350 mK, 500 mK, and 750 mK, with high fidelity single and two qubit operations. The highest temperature, 750 mK, falls within the realistic thermal budget for practical integrated cryogenic electronics and represents the highest operating temperature reported for this qubit platform.

quant-ph↗

arXiv2019

Quantum transport properties of industrial $^{28}$Si/$^{28}$SiO$_2$

We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92\%. Hall-bar transistors with an equivalent oxide thickness of 17 nm are fabricated in an academic cleanroom. A critical density for conduction of $1.75\times10^{11}$ cm$^{-2}$ and a peak mobility of 9800 cm$^2$/Vs are measured at a temperature of 1.7 K. The $^{28}$Si/$^{28}$SiO$_2$ interface is characterized by a roughness of $Δ=0.4$ nm and a correlation length of $Λ=3.4$ nm. An upper bound for valley splitting energy of 480 $μ$eV is estimated at an effective electric field of 9.5 MV/m. These results support the use of wafer-scale $^{28}$Si/$^{28}$SiO$_2$ as a promising material platform to manufacture industrial spin qubits.

cond-mat.mes-hall↗