arXiv subjects

S. Das Sarma

Publications and source records attributed to S. Das Sarma.

At least 253 records · Page 14Linked to original sources

arXiv2011

Inhomogenous electronic structure, transport gap, and percolation threshold in disordered bilayer graphene

The inhomogenous real-space electronic structure of gapless and gapped disordered bilayer graphene is calculated in the presence of quenched charge impurities. For gapped bilayer graphene we find that for current experimental conditions the amplitude of the fluctuations of the screened disorder potential is of the order of (or often larger than) the intrinsic gap $Δ$ induced by the application of a perpendicular electric field. We calculate the crossover chemical potential, $Δ_{\rm cr}$, separating the insulating regime from a percolative regime in which less than half of the area of the bilayer graphene sample is insulating. We find that most of the current experiments are in the percolative regime with $Δ_{\rm cr}<<Δ$. The huge suppression of $Δ_{\rm cr}$ compared with $Δ$ provides a possible explanation for the large difference between the theoretical band gap $Δ$ and the experimentally extracted transport gap.

cond-mat.mes-hall↗

arXiv2011

Theory of 2D transport in graphene for correlated disorder

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged impurity correlations give rise to a density dependent graphene conductivity, which agrees well qualitatively with the existing experimental data. We also find, quite unexpectedly, that the conductivity could increase with increasing impurity density if there is sufficient inter-impurity correlation present in the system. In particular, the linearity (sublinearity) of graphene conductivity at lower (higher) gate voltage is naturally explained as arising solely from impurity correlation effects in the Coulomb disorder.

cond-mat.mes-hall↗

arXiv2011

Interaction-induced excited-band condensate in a double-well optical lattice

We show theoretically that interaction effects in a double-well optical lattice can induce condensates in an excited band. For a symmetric double-well lattice, bosons condense into the bottom of the excited band at the edge of the Brillouin Zone if the chemical potential is above a critical value. For an asymmetric lattice, a condensate with zero momentum is automatically induced in the excited band by the condensate in the lowest band. This is due to a combined effect of interaction and lattice potential, which reduces the band gap and breaks the inversion symmetry. Our work can be generalized to a superlattice composed of multiple-well potentials at each lattice site, where condensates can be induced in even higher bands.

cond-mat.quant-gas↗

arXiv2011

Disorder-induced temperature-dependent transport in graphene: Puddles, impurities, activation, and diffusion

We theoretically study the transport properties of both monolayer and bilayer graphene in the presence of electron-hole puddles induced by charged impurities which are invariably present in the graphene environment. We calculate the graphene conductivity by taking into account the non-mean-field two-component nature of transport in the highly inhomogeneous density and potential landscape, where activated transport across the potential fluctuations in the puddle regimes coexists with regular metallic diffusive transport. The existence of puddles allows the local activation at low carrier densities, giving rise to an insulating temperature dependence in the conductivity of both monolayer and bilayer graphene systems. We also critically study the qualitative similarity and the quantitative difference between monolayer and bilayer graphene transport in the presence of puddles. Our theoretical calculation explains the non-monotonic feature of the temperature dependent transport, which is experimentally generically observed in low mobility graphene samples. We establish the 2-component nature (i.e., both activated and diffusive) of graphene transport arising from the existence of potential fluctuation induced inhomogeneous density puddles. The temperature dependence of the graphene conductivity arises from many competing mechanisms, even without considering any phonon effects, such as thermal excitation of carriers from the valence band to the conduction band, temperature dependent screening, thermal activation across the potential fluctuations associated with the electron-hole puddles induced by the random charged impurities in the environment, leading to very complex temperature dependence which depends both on the carrier density and the temperature range of interest.

cond-mat.mes-hall↗

arXiv2011

Low-noise conditional operation of singlet-triplet coupled quantum dot qubits

We theoretically study the influence of charge noise on a controlled phase gate, implemented using two proximal double quantum dots coupled electrostatically. Using the configuration interaction method, we present a full description of the conditional control scheme and quantitatively calculate the gate error arising from charge fluctuations. Our key finding is that the existence of noise-immune sweet spots depends on not only the energy detuning but also the device geometry. The conditions for sweet spots with minimal charge noise are predicted analytically and verified numerically. Going beyond the simple sweet-spot concept we demonstrate the existence of other optimal situations for fast and low-noise singlet-triplet two-qubit gates.

cond-mat.mes-hall↗

arXiv2011

Probing non-Abelian statistics with Majorana fermion interferometry in spin-orbit-coupled semiconductors

The list of quantum mechanical systems with non-Abelian statistics has recently been expanded by including generic spin-orbit-coupled semiconductors e.g., InAs) in proximity to a s-wave superconductor. Demonstration of the anyonic statistics using Majorana fermion interferometry in this system is a necessary first step towards topological quantum computation (TQC). However, since all isolated chiral edges that can be created in the semiconductor are charge neutral, it is not clear if electrically controlled interferometry is possible in this system. Here we show that when two isolated chiral Majorana edges are brought into close contact, the resultant interface supports charge current, enabling electrically controlled Majorana fermion interferometry in the semiconductor structure. Such interferometry experiments on the semiconductor are analogous to similar interferometry experiments on the $ν=5/2$ fractional quantum Hall systems and on the surface of a 3D strong topological insulator, illustrating the usefulness of the 2D semiconductor heterostructure as a suitable TQC platform. In particular, we proposed Majorana interferometers may be the most direct method for establishing non-Abelian braiding statistics in topological superconductors.

cond-mat.str-el↗

arXiv2011

Quantum-Classical Crossover and Apparent Metal-Insulator Transition in a Weakly Interacting 2D Fermi Liquid

We report the observation of a parallel magnetic field induced metal-insulator transition (MIT) in a high-mobility two-dimensional electron gas (2DEG) for which spin and localization physics most likely play no major role. The high-mobility metallic phase at low field is consistent with the established Fermi liquid transport theory including phonon scattering, whereas the insulating phase at higher field shows a large negative temperature dependence at resistances much smaller than the quantum of resistance, $h/e^2$. We argue that this observation is a direct manifestation of a quantum-classical crossover arising predominantly from the magneto-orbital coupling between the finite width of the 2DEG and the in-plane magnetic field.

cond-mat.mes-hall↗

arXiv2011

Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high temperatures manifesting a non-monotonic in the temperature dependent resistivity.This feature is strongly affected by carrier density modulation. To understand this anomalous temperature dependence, we introduce thermal activation of charge carriers in electron-hole puddles induced by randomly distributed charged impurities. Observed temperature evolution of resistivity is then understood from the competition among thermal activation of charge carriers, temperature-dependent screening and phonon scattering effects. Our results imply that the transport property of transferred CVD-grown graphene is strongly influenced by the details of the environment

cond-mat.mes-hall↗

arXiv2011

Quantum theory of the charge stability diagram of semiconductor double quantum dot systems

We complete our recently introduced theoretical framework treating the double quantum dot system with a generalized form of Hubbard model. The effects of all quantum parameters involved in our model on the charge stability diagram are discussed in detail. A general formulation of the microscopic theory is presented, and truncating at one orbital per site, we study the implication of different choices of the model confinement potential on the Hubbard parameters as well as the charge stability diagram. We calculate the charge stability diagram keeping three orbitals per site and find that the effect of additional higher-lying orbitals on the subspace with lowest-energy orbitals only can be regarded as a small renormalization of Hubbard parameters, thereby justifying our practice of keeping only the lowest-orbital in all other calculations. The role of the harmonic oscillator frequency in the implementation of the Gaussian model potential is discussed, and the effect of an external magnetic field is identified to be similar to choosing a more localized electron wave function in microscopic calculations. The full matrix form of the Hamiltonian including all possible exchange terms, and several peculiar charge stability diagrams due to unphysical parameters are presented in the appendix, thus emphasizing the critical importance of a reliable microscopic model in obtaining the system parameters defining the Hamiltonian.

cond-mat.mes-hall↗

arXiv2011

Master equation approach to the central spin decoherence problem: the uniform coupling model and the role of projection operators

The generalized Master equation of the Nakajima-Zwanzig (NZ) type has been used extensively to investigate the coherence dynamics of the central spin model with the nuclear bath in a narrowed state characterized by a well defined value of the Overhauser field. We revisit the perturbative NZ approach and apply it to the exactly solvable case of a system with uniform hyperfine couplings. This is motivated by the fact that the effective Hamiltonian-based theory suggests that the dynamics of the realistic system at low magnetic fields and short times can be mapped onto the uniform coupling model. We show that the standard NZ approach fails to reproduce the exact solution of this model beyond very short times, while the effective Hamiltonian calculation agrees very well with the exact result on timescales during which most of the coherence is lost. Our key finding is that in order to extend the timescale of applicability of the NZ approach in this case, instead of using a single projection operator one has to use a set of correlated projection operators which properly reflect the symmetries of the problem and greatly improve the convergence of the theory. This suggests that the correlated projection operators are crucial for a proper description of narrowed state free induction decay at short times and low magnetic fields. Our results thus provide important insights toward the development of a more complete theory of central spin decoherence applicable in a broader regime of timescales and magnetic fields.

cond-mat.mes-hall↗

arXiv2011

Optical and transport gaps in gated bilayer graphene

We discuss the effect of disorder on the band gap measured in bilayer graphene in optical and transport experiments. By calculating the optical conductivity and density of states using a microscopic model in the presence of disorder, we demonstrate that the gap associated with transport experiments is smaller than that associated with optical experiments. Intrinsic bilayer graphene has an optical conductivity in which the energy of the peaks associated with the interband transition are very robust against disorder and thus provide an estimate of the band gap. In contrast, extraction of the band gap from the optical conductivity of extrinsic bilayer graphene is almost impossible for significant levels of disorder due to the ambiguity of the transition peaks. The density of states contains an upper bound on the gap measured in transport experiments, and disorder has the effect of reducing this gap which explains why these experiments have so far been unable to replicate the large band gaps seen in optical measurements.

cond-mat.mes-hall↗

arXiv2011

A proposed spin qubit CNOT gate robust against noisy coupling

We propose an implementation of the two-qubit gate in a quantum dot spin qubit system which is immune to charge noise problems. Our proposed implementation, if it could be realized in a physical system, would have the advantage of being robust against uncertainties and fluctuations in the tunnel coupling and barrier gate voltage pulse area. The key idea is to introduce an auxiliary dot and use an analog to the stimulated Raman adiabatic passage pulse sequence in three-level atomic systems, often referred to in the context of electron transport in quantum dot systems as Coherent Tunneling by Adiabatic Passage. Spin-dependent tunneling opens the possibility of performing two-qubit gate operations by this method.

cond-mat.mes-hall↗

arXiv2011

Impurity effects on semiconductor quantum bits in coupled quantum dots

We theoretically consider the effects of having unintentional charged impurities in laterally coupled two-dimensional double (GaAs) quantum dot systems, where each dot contains one or two electrons and a single charged impurity in the presence of an external magnetic field. Using molecular orbital and configuration interaction method, we calculate the effect of the impurity on the 2-electron energy spectrum of each individual dot as well as on the spectrum of the coupled-double-dot 2-electron system. We find that the singlet-triplet exchange splitting between the two lowest energy states, both for the individual dots and the coupled dot system, depends sensitively on the location of the impurity and its coupling strength (i.e. the effective charge). A strong electron-impurity coupling breaks down equality of the two doubly-occupied singlets in the left and the right dot leading to a mixing between different spin singlets. As a result, the maximally entangled qubit states are no longer fully obtained in zero magnetic field case. Moreover, a repulsive impurity results in a triplet-singlet transition as the impurity effective charge increases or/and the impurity position changes. We comment on the impurity effect in spin qubit operations in the double dot system based on our numerical results.

cond-mat.mes-hall↗

arXiv2011

Anomalous Hall response of topological insulators

The anomalous Hall effect due to the surface conduction band of 3D topological insulators with an out-of-plane magnetization is \textit{always} dominated by an intrinsic topological term of the order of the conductivity quantum. We determine the contributions due to the band structure, skew scattering, side jump and magnetic impurities on the same footing, demonstrating that the topological term, renormalized due to disorder, overwhelms all other terms, providing an unmistakable signature of $Z_2$ topological order. Uncharacteristically, skew scattering contributes in the Born approximation as well as in the third order in the scattering potential, while in addition to the side-jump scattering term we identify a novel intrinsic side-jump term of a similar magnitude. These, however, never overwhelm the topological contribution.

cond-mat.mes-hall↗

arXiv2011

Hubbard model description of silicon spin qubits: charge stability diagram and tunnel coupling in Si double quantum dots

We apply the recently introduced Hubbard model approach to quantitatively describe the experimental charge stability diagram and tunnel coupling of silicon double quantum dot systems. The results calculated from both the generalized Hubbard model and the microscopic theory are compared with existing experimental data, and excellent agreement between theory and experiment is found. The central approximation of our theory is a reduction of the full multi-electron multi-band system to an effective two-electron model, which is numerically tractable. In the microscopic theory we utilize the Hund-Mulliken approximation to the electron wave functions and compare the results calculated with two different forms of confinement potentials (biquadratic and Gaussian). We discuss the implications of our work for future studies.

cond-mat.mes-hall↗

arXiv2011

Topologically non-trivial superconductivity in spin-orbit coupled systems: Bulk phases and quantum phase transitions

Topologically non-trivial superconductivity has been predicted to occur in superconductors with a sizable spin-orbit coupling in the presence of an external Zeeman splitting. Two such systems have been proposed: (a) s-wave superconductor pair potential is proximity induced on a semiconductor, and (b) pair potential naturally arises from an intrinsic s-wave pairing interaction. As is now well known, such systems in the form of a 2D film or 1D nano-wires in a wire-network can be used for topological quantum computation. When the external Zeeman splitting $Γ$ crosses a critical value $Γ_c$, the system passes from a regular superconducting phase to a non-Abelian topological superconducting phase. In both cases (a) and (b) we consider in this paper the pair potential $Δ$ is strictly s-wave in both the ordinary and the topological superconducting phases, which are separated by a topological quantum critical point at $Γ_c = \sqrt{Δ^2 + μ^2}$, where $μ(>> Δ)$ is the chemical potential. On the other hand, since $Γ_c >> Δ$, the Zeeman splitting required for the topological phase ($Γ> Γ_c$) far exceeds the value ($Γ\sim Δ$) above which an s-wave pair potential is expected to vanish (and the system to become non-superconducting) in the absence of spin-orbit coupling. We are thus led to a situation that the topological superconducting phase appears to set in a parameter regime at which the system actually is non-superconducting in the absence of spin-orbit coupling. In this paper we address the question of how a pure s-wave pair potential can survive a strong Zeeman field to give rise to a topological superconducting phase. We show that the spin-orbit coupling is the crucial parameter for the quantum transition into and the robustness of the topologically non-trivial superconducting phase realized for $Γ>> Δ$.

cond-mat.supr-con↗

arXiv2011

Nearly-flat bands with nontrivial topology

We report the theoretical discovery of a large class of 2D tight-binding models containing nearly-flat bands with nonzero Chern numbers. In contrast with previous studies, where nonlocal hoppings are usually required, the Hamiltonians of our models only require short-range hopping and have the potential to be realized in cold atomic gases. Due to the similarity with 2D continuum Landau levels, these topologically nontrivial nearly-flat bands may lead to the realization of fractional anomalous quantum Hall states and fractional topological insulators in real materials. Among the models we discover, the most interesting and practical one is a square-lattice three-band model which has only nearest-neighbor hopping. To understand better the physics underlying the topological flat band aspects, we also present the studies of a minimal two-band model on the checkerboard lattice.

cond-mat.str-el↗

arXiv2011

Scattering Mechanisms in a High Mobility Low Density Carbon-Doped (100) GaAs Two-Dimensional Hole System

We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured. This is the highest mobility reported for a 2DHS to date. Using a back-gated sample geometry, the density dependence of mobility was studied from 2.8 x 10^10 cm^-2 to 1 x 10^11 cm^-2. The mobility vs. density cannot be fit to a power law dependence of the form mu ~ p^alpha using a single exponent alpha. Our data indicate a continuous evolution of the power law with alpha ranging from ~ 0.7 at high density and increasing to ~ 1.7 at the lowest densities measured. Calculations specific to our structure indicate a crossover of the dominant scattering mechanism from uniform background impurity scattering at high density to remote ionized impurity scattering at low densities. This is the first observation of a carrier density-induced transition from background impurity dominated to remote dopant dominated transport in a single sample.

cond-mat.str-el↗