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arXiv · 1009.2506

Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition

J. Heo·H. J. Chung·Sung-Hoon Lee·H. Yang·D. H. Seo·J. K. Shin·U-In Chung·S. Seo·E. H. Hwang·S. Das Sarma
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Abstract

Temperature-dependent resistivity of graphene grown by chemical vapor deposition (CVD) is investigated. We observe in low mobility CVD graphene device a strong insulating behavior at low temperatures and a metallic behavior at high temperatures manifesting a non-monotonic in the temperature dependent resistivity.This feature is strongly affected by carrier density modulation. To understand this anomalous temperature dependence, we introduce thermal activation of charge carriers in electron-hole puddles induced by randomly distributed charged impurities. Observed temperature evolution of resistivity is then understood from the competition among thermal activation of charge carriers, temperature-dependent screening and phonon scattering effects. Our results imply that the transport property of transferred CVD-grown graphene is strongly influenced by the details of the environment

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J. Heo, H. J. Chung, Sung-Hoon Lee, H. Yang, D. H. Seo, J. K. Shin, U-In Chung, S. Seo, E. H. Hwang, S. Das Sarma. 2011-08-15. Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition. https://doi.org/10.1103/physrevb.84.035421

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