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S. Das Sarma

Publications and source records attributed to S. Das Sarma.

At least 433 records · Page 24Linked to original sources
arXiv2006

Transport properties of two-dimensional electron systems on silicon (111) surfaces

We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and resistivity for the recently fabricated Si(111)-vacuum FET by using a semiclassical Boltzmann theory including screened charged impurity scattering. We find reasonable agreement with the corresponding experimental transport properties, indicating that the screened disorder potential from random charged impurities is the main scattering mechanism. We also find that the theoretical results with the valley degeneracy $g_v=2$ give much better agreement with experiment than the $g_v=6$ situation indicating that the usual bulk six-valley degeneracy of Si is lifted in this system.

cond-mat.mtrl-sci↗
arXiv2006

Collective Modes and Skyrmion Excitations in Graphene SU(4) Quantum Hall Ferromagnets

Graphene exhibits quantum Hall ferromagnetism in which an approximate SU(4) symmetry involving spin and valley degrees of freedom is spontaneously broken. We construct a set of integer and fractional quantum Hall states that break the SU(4) spin/valley symmetry, and study their neutral and charged excitations. Several properties of these ferromagnets can be evaluated analytically in the SU(4) symmetric limit, including the full collective mode spectrum at integer fillings. By constructing explicit wave functions we show that the lowest energy skyrmion states carry charge $\pm 1$ for {\em any} integer filling, and that skyrmions are the lowest energy charged excitations for graphene Landau level index $|n| \le 3$. We also show that the skyrmion lattice states which occur near integer filling factors support four gapless collective mode branches in the presence of full SU(4) symmetry. Comparisons are made with the more familiar SU(2) quantum Hall ferromagnets studied previously.

cond-mat.mes-hall↗
arXiv2006

Coherent Tunneling in Exciton Condensates of Bilayer Quantum Hall Systems

Due to strong interlayer correlations, the bilayer quantum Hall system is a single coherent system as a whole rather than a weakly-coupled set of two independent systems, which makes conventional tunnelling theories inapplicable. In this paper, we develop a theory of interlayer tunnelling in coherent exciton condensates of bilayer quantum Hall systems at total filling factor $ν_T=1$. One of the most important consequences of our theory is that the zero-bias interlayer tunnelling conductance peak is strongly enhanced, but fundamentally finite even at zero temperature. We explicitly compute the height of the conductance peak as a function of interlayer distance, which is compared with experiment. It is emphasized that the interlayer distance dependence of the conductance peak is one of the key properties distinguishing between the spontaneous coherence due to many-body effects of the Coulomb interaction and the induced coherence due to the single-particle tunnelling gap. It is also emphasized that, though the strongly enhanced tunnelling conductance originates from the interlayer phase coherence, it is not the usual Josephson effect. We propose an experimental setup for the true Josephson effect in couterflowing current measurements for a coupled set of two bilayer quantum Hall systems, which is a more precise analogy with the real Josephson effect in superconductivity.

cond-mat.str-el↗
arXiv2006

Magnetic field-assisted manipulation and entanglement of Si spin qubits

Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.

cond-mat.mes-hall↗
arXiv2006

Quantum theory for electron spin decoherence induced by nuclear spin dynamics in semiconductor quantum computer architectures: Spectral diffusion of localized electron spins in the nuclear solid-state environment

We consider the decoherence of a single localized electron spin due to its coupling to the lattice nuclear spin bath in a semiconductor quantum computer architecture. In the presence of an external magnetic field and at low temperatures, the dominant decoherence mechanism is the spectral diffusion of the electron spin resonance frequency due to the temporally fluctuating random magnetic field associated with the dipolar interaction induced flip-flops of nuclear spin pairs. The electron spin dephasing due to this random magnetic field depends intricately on the quantum dynamics of the nuclear spin bath, making the coupled decoherence problem difficult to solve. We provide a formally exact solution of this non-Markovian quantum decoherence problem which numerically calculates accurate spin decoherence at short times, which is of particular relevance in solid-state spin quantum computer architectures. A quantum cluster expansion method is developed, motivated, and tested for the problem of localized electron spin decoherence due to dipolar fluctuations of lattice nuclear spins. The method is presented with enough generality for possible application to other types of spin decoherence problems. We present numerical results which are in quantitative agreement with electron spin echo measurements in phosphorus doped silicon. We also present spin echo decay results for quantum dots in GaAs which differ qualitatively from that of the phosphorus doped silicon system. Our theoretical results provide the ultimate limit on the spin coherence (at least, as characterized by Hahn spin echo measurements) of localized electrons in semiconductors in the low temperature and the moderate to high magnetic field regime of interest in scalable semiconductor quantum computer architectures.

cond-mat.mes-hall↗
arXiv2006

Exchange coupling in semiconductor nanostructures: Validity and limitations of the Heitler-London approach

The exchange coupling of the spins of two electrons in double well potentials in a semiconductor background is calculated within the Heitler-London (HL) approximation. Atomic and quantum dot types of confining potentials are considered, and a systematic analysis for the source of inaccuracies in the HL approach is presented. For the strongly confining coulombic atomic potentials in the H2 molecule, the most dramatic failure occurs at very large interatomic distances, where HL predicts a triplet ground state, both in 3D and in 2D, coming from the absence of electron-electron correlation effects in this approach. For a 2D double well potential, failures are identified at relatively smaller interdot distances, and may be attributed to the less confining nature of the potential, leading to larger overlap and consequently an inadequate representation of the two-particle states written, within HL, in terms of the ground state orbital at each isolated well. We find that in the double dot case, the range of validity of HL is improved (restricted) in a related 3D (1D) model, and that results always tend to become more reliable as the interdot distance increases. Our calculated exchange coupling is of relevance to the exchange gate quantum computer architectures in semiconductors.

cond-mat.mes-hall↗
arXiv2006

Magnetic Percolation and the Phase Diagram of the Disordered RKKY model

We consider ferromagnetism in spatially randomly located magnetic moments, as in a diluted magnetic semiconductor, coupled via the carrier-mediated indirect exchange RKKY interaction. We obtain via Monte Carlo the magnetic phase diagram as a function of the impurity moment density $n_{i}$ and the relative carrier concentration $n_{c}/n_{i}$. As evidenced by the diverging correlation length and magnetic susceptibility, the boundary between ferromagnetic (FM) and non-ferromagnetic (NF) phases constitutes a line of zero temperature critical points which can be viewed as a magnetic percolation transition. In the dilute limit, we find that bulk ferromagnetism vanishes for $n_{c}/n_{i}>.1$. We also incorporate the local antiferromagnetic direct superexchange interaction between nearest neighbor impurities, and examine the impact of a damping factor in the RKKY range function.

cond-mat.mtrl-sci↗
arXiv2006

Quantum Computation Using Vortices and Majorana Zero Modes of a $p_x$ + $ip_y$ Superfluid of Fermionic Cold Atoms

We propose to use the recently predicted two-dimensional `weak-pairing' $p_x + ip_y$ superfluid state of fermionic cold atoms as a platform for topological quantum computation. In the core of a vortex, this state supports a zero-energy Majorana mode, which moves to finite energy in the corresponding topologically trivial `strong-pairing' state. By braiding vortices in the `weak-pairing' state, unitary quantum gates can be applied to the Hilbert space of Majorana zero-modes. For read-out of the topological qubits, we propose realistic schemes suitable for atomic superfluids.

quant-ph↗
arXiv2006

Searching for a Supersolid in Cold Atom Optical Lattices

We suggest a technique for the observation of a predicted supersolid phase in extended Bose-Hubbard models which are potentially realizable in cold atom optical lattice systems. In particular, we discuss important subtleties arising from the existence of the trapping potential which leads to an externally imposed (as opposed to spontaneous) breaking of translational invariance. We show, by carefully including the trapping potential in our theoretical formalism, that noise correlations could prove instrumental in identifying the supersolid and density wave phases. We also find that the noise correlation peak width scales inversely with the relative size of trapped Mott domains.

cond-mat.other↗
arXiv2006

Nonlinear 2D Spin Susceptibility in a Finite Magnetic Field: Spin-Polarization Dependence

By theoretically calculating the interacting spin susceptibility of a two-dimensional electron system in the presence of finite spin polarization, we show that the extensively employed technique of measuring the 2D spin susceptibility by linear extrapolation to a zero field from the finite-field experimental data is theoretically unjustified due to the strong nonlinear magnetic field dependence of the interacting susceptibility. Our work compellingly establishes that much of the prevailing interpretation of the 2D susceptibility measurements is incorrect, and, in general, the 2D interacting susceptibility cannot be extracted from the critical magnetic field for full spin polarization, as is routinely done experimentally.

cond-mat.str-el↗
arXiv2006

Cold Atom Optical Lattices as Quantum Analog Simulators for Aperiodic One-Dimensional Localization Without Disorder

Cold atom optical lattices allow for the study of quantum localization and mobility edges in a disorder-free environment. We predict the existence of an Anderson-like insulator with sharp mobility edges in a one-dimensional nearly-periodic optical lattice. We show that the mobility edge manifests itself as the early onset of pinning in center of mass dipole oscillations in the presence of a magnetic trap which should be observable in optical lattices.

cond-mat.other↗
arXiv2006

Charge fluctuation induced dephasing of exchange coupled spin qubits

Exchange coupled {\it spin} qubits in semiconductor nanostructures are shown to be vulnerable to dephasing caused by {\it charge noise} invariably present in the semiconductor environment. This decoherence of exchange gate by environmental charge fluctuations arises from the fundamental Coulombic nature of the Heisenberg coupling, and presents a serious challenge to the scalability of the widely studied exchange gate solid state spin quantum computer architectures. We estimate dephasing times for coupled spin qubits in a wide range (from 1 ns up to $> 1 μ$s) depending on the exchange coupling strength and its sensitivity to charge fluctuations.

cond-mat.mes-hall↗
arXiv2006

Mean field theory for double-perovskites

A mean field approximation of a model for double perovskites that takes into account the coupling between itinerant electron spins and localized spins is developed. As in previously reported theoretical results, and contrary to experimental observation, the critical temperature is suppressed for large electron density. An effective Heisenberg model reveals the cause of this discrepancy: the competition between degenerate antiferromagnetic and ferromagnetic channels. This degeneracy can be broken by the inclusion of a Hubbard-type U term. It is therefore suggested that electron correlation effects need to be incorporated in the minimal model of double perovskites in order to explain the experimental observation of increasing ferromagnetic critical temperature with increasing electron doping.

cond-mat.mtrl-sci↗
arXiv2006

Intrinsic Spin Hall Effect in the presence of Extrinsic Spin-Orbit Scattering

Intrinsic and extrinsic spin Hall effects are considered together on an equal theoretical footing for the Rashba spin-orbit coupling in two-dimensional (2D) electron and hole systems, using the diagrammatic method for calculating the spin Hall conductivity. Our analytic theory for the 2D holes shows the expected lowest-order additive result for the spin Hall conductivity. But, the 2D electrons manifest a very surprising result, exhibiting a non-analyticity in the Rashba coupling strength $α$ where the strictly extrinsic spin Hall conductivity (for $α= 0$) cannot be recovered from the $α\to 0$ limit of the combined theory. The theoretical results are discussed in the context of existing experimental results.

cond-mat.mes-hall↗
arXiv2006

Clustering in disordered ferromagnets: The Curie temperature in diluted magnetic semiconductors

We theoretically investigate impurity correlation and magnetic clustering effects on the long-range ferromagnetic ordering in diluted magnetic semiconductors, such as $\textrm{Ga}_{1-x}\textrm{Mn}_{x}\textrm{As}$, using analytical arguments and direct Monte Carlo simulations. We obtain an analytic formula for the ferromagnetic transition temperature $T_{c}$ which becomes asymptotically exact in the strongly disordered, highly dilute (i.e. small $x$) regime. We establish that impurity correlations have only small effects on $T_{c}$ with the neutrally correlated random disorder producing the nominally highest $T_{c}$. We find that the ferromagnetic order is approached from the high temperature paramagnetic side through a random magnetic clustering phenomenon consistent with the percolation transition scenario.

cond-mat.mtrl-sci↗
arXiv2006

Quantum control of donor electrons at the Si-SiO2 interface

Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the distance (~ 10-50 nm) of the donor from the interface. Our results establish that quantum control in such nanostructure architectures could, in principle, be achieved.

cond-mat.mes-hall↗
arXiv2006

Hall coefficient and magnetoresistance of 2D spin-polarized electron systems

Recent measurements of the 2D Hall resistance show that the Hall coefficient is independent of the applied in-plane magnetic field, i.e., the spin-polarization of the system. We calculate the weak-field Hall coefficient and the magnetoresistance of a spin polarized 2D system using the semi-classical transport approach based on the screening theory. We solve the coupled kinetic equations of the two carrier system including electron-electron interaction. We find that the in-plane magnetic field dependence of the Hall coefficient is suppressed by the weakening of screening and the electron-electron interaction. However, the in-plane magnetoresistance is mostly determined by the change of the screening of the system, and can therefore be strongly field dependent.

cond-mat.mes-hall↗