arXiv subjects

S. J. Xu

Publications and source records attributed to S. J. Xu.

7 recordsLinked to original sources

arXiv2025

Nonreciprocal ballistic transport in multi-layer Weyl semimetal films with surface engineering

Weyl semimetal (WSM) thin films exhibit distinct electronic properties compared to their bulk counterparts. In this study, we theoretically investigate the nonreciprocal ballistic transport phenomena arising in WSM thin films due to surface modifications. Our analysis demonstrates that the nonreciprocity is sub-band-resolved, where the surface states provide the dominant contribution to the nonreciprocity, whereas the bulk states introduce a negative correction. Calculations further reveal a quantum size effect: overall, the nonreciprocal signal decreases with increasing film thickness, but it undergoes discontinuities as the Fermi energy approaches the bottom of a sub-band. Moreover, we observe that the density of states (DOS) in such multi-layer systems exhibits a thickness-independent pattern, which can be effectively explained by a single-variable theory.

cond-mat.mes-hall↗

arXiv2013

Substrate effects on quasiparticles and excitons in graphene nanoflakes

The effects of substrate on electronic and optical properties of triangular and hexagonal graphene nanoflakes with armchair edges are investigated by using a configuration interaction approach beyond double excitation scheme. The quasiparticle correction to the energy gap and exciton binding energy are found to be dominated by the long-range Coulomb interactions and exhibit similar dependence on the dielectric constant of the substrate, which leads to a cancellation of their contributions to the optical gap. As a result, the optical gaps are shown to be insensitive to the dielectric environment and unexpectedly close to the single-particle gaps.

cond-mat.mes-hall↗

arXiv2007

Quantum Theory of Spontaneous Emission from Exciton-Electron-Phonon Complex in Solid: Quantum Interference and Many-Body Effect

A full quantum mechanical theory for the spontaneous emission from excitons simultaneously coupled to electronic excitations and anharmonic phonons in solid is developed. Origin of detailed structures, such as zero-phonon line splitting, Fano lineshape near one phonon sideband, strong second-order phonon Stokes line, asymmetric phonon anti-Stokes lines, and two-electron satellites as well as their phonon replicas recently revealed in the low-temperature photoluminescence of ZnO, has been identified by quantitative calculations from the theory.

cond-mat.mtrl-sci↗

arXiv2006

Experimental Observation of Kondo-Fano Resonant Tunneling in Silicon-Doped GaAs/AlAs Multiple Quantum Wells

We report experimental observation of Kondo-Fano resonant tunneling in Si-doped GaAs/AlAs multiple quantum wells. The spectrum of differential tunneling conductance at low bias shows a strong temperature dependent resonance, whose peak is split in the presence of a magnetic field, characteristic of a Kondo resonance. The data is well explained as a resonant tunneling of conduction electrons at the Fermi level through the doped silicon impurity states inside the wells by using an impurity Anderson model. The Coulomb blockade resonance of the impurity states induces a Fano dip above the Kondo resonance.

cond-mat.mtrl-sci↗

arXiv2005

Interpretation of the "S-shaped" temperature dependence of luminescent peaks from semiconductors

The ``S-shape'' (decrease-increase-decrease) temperature dependence of luminescence peak shift from semiconductors is considered. A luminescence model for localized state ensemble was employed to interpret this anomalous temperature dependence of emission peak. Excellent agreement between the theoretical calculation and the experiments was achieved over the whole studied temperature region. The physical origin of the ``S-shaped'' shift is revealed.

cond-mat.mtrl-sci↗

arXiv2005

Temperature dependent photon emission spectra of free excitons in phonon field of GaN

Temperature-dependent radiative recombination of free excitons involving one or two LO phonons in GaN is investigated in detail. It is found that both phonon sidebands possess asymmetric lineshape and their energy spacings from the zero phonon line strongly deviate from the characteristic energy of LO phonons as the temperature increases. Furthermore, the deviation rates of one and two phonon sidebands are significantly different. Segall-Mahan theory, taking the exciton-photon and exciton-phonon interactions into account, is employed to calculate the sidebands of one or two LO phonons for free excitons in a wide temperature range. Excellent agreement between theory and experiment is achieved by using only one adjustable parameter (effective mass of free excitons). The obtained effective mass indicates that the free excitons in GaN are likely much lighter than estimated by available theoretical studies.

cond-mat.mtrl-sci↗

arXiv2004

A model for luminescence of localized state ensemble

A distribution function for localized carriers, $f(E,T)=\frac{1}{e^{(E-E_a)/k_BT}+τ_{tr}/τ_r}$, is proposed by solving a rate equation, in which, electrical carriers' generation, thermal escape, recapture and radiative recombination are taken into account. Based on this distribution function, a model is developed for luminescence from localized state ensemble with a Gaussian-type density of states. The model reproduces quantitatively all the anomalous temperature behaviors of localized state luminescence. It reduces to the well-known band-tail and luminescence quenching models under certain approximations.

cond-mat.other↗