arXiv subjects

S. Massidda

Publications and source records attributed to S. Massidda.

36 records · Page 2Linked to original sources

arXiv2008

The optical phonon spectrum of SmFeAsO

We measured the Raman and the Infrared phonon spectrum of SmFeAsO polycrystalline samples. We also performed Density Functional Theory calculations within the pseudopotential approximation to obtain the structural and dynamical lattice properties of both the SmFeAsO and the prototype LaFeAsO compounds. The measured Raman and Infrared phonon frequencies are well predicted by the optical phonon frequencies computed at the Gamma point, showing the capability of the employed ab-initio methods to describe the dynamical properties of these materials. A comparison among the phonon frequencies of different oxypnictides suggests a possible role of the high frequency phonons in the pairing mechanism leading to superconductivity in these materials.

cond-mat.supr-con↗

arXiv2008

Evidence for gap anisotropy in CaC6 from directional point-contact spectroscopy

We present the first results of directional point-contact spectroscopy in high quality CaC6 samples both along the ab plane and in the c-axis direction. The superconducting order parameter Δ(0), obtained by fitting the Andreev-reflection (AR) conductance curves at temperatures down to 400 mK with the single-band 3D Blonder-Tinkham-Klapwijk model, presents two different distributions in the two directions of the main current injection, peaked at 1.35 and 1.71 meV, respectively. By ab-initio calculations of the AR conductance spectra, we show that the experimental results are in good agreement with the recent predictions of gap anisotropy in CaC6.

cond-mat.supr-con↗

arXiv2008

Electronic, dynamical and superconducting properties of CaBeSi

We report first-principles calculations on the normal and superconducting state of CaBe(x)Si(2-x) (x=1), in the framework of density functional theory for superconductors (SCDFT). CaBeSi is isostructural and isoelectronic to MgB2 and this makes possible a direct comparison of the electronic and vibrational properties and the electron-phonon interaction of the two materials. Despite the many similarities with MgB2 (e.g. sigma bands at the Fermi level and a larger Fermi surface nesting), according to our calculations CaBeSi has a very low critical temperature (Tc ~ 0.4 K, consistent with the experiment). CaBeSi exhibits a complex gap structure, with three gaps at Fermi level: besides the two sigma and pi gaps, present also in MgB2, the appearance of a third gap is related to the anisotropy of the Coulomb repulsion, acting in different way on the bonding and antibonding electronic pi states.

cond-mat.supr-con↗

arXiv2007

Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films

We report magnetoresistance (MR) measurements on MgB2 and the corresponding full account from ab-initio calculations; we suggest that this combination can be a useful tool to probe electron- phonon coupling. We obtain good quantitative agreement between high field measurements on neutron irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of magnetic fields (0-28 T) and temperatures (40-300 K), and as a function of the field orientation. The crossovers between in-plane and out-of-plane MR, experimentally observed as a function of either disorder or temperature are well reproduced indicating that disorder and interaction with phonons strongly affect the scattering rate of s-carriers.

cond-mat.supr-con↗

arXiv2006

Intraband versus interband scattering rate effects in neutron irradiated MgB2

One of the most important predictions of the two-gap theory of superconductivity concerns the role of interband scattering (IBS) by impurities. IBS is expected to decrease the critical temperature, Tc, of MgB2 to a saturation value of about 20 K, where the two gaps merge to a single one. These predictions have been partially contradicted by experiments. In fact, Tc does not saturate in irradiated samples, but decreases linearly with residual resistivity and the merging of the gaps has been observed at a much lower Tc (11 K). In this paper we argue that, while at low level of disorder IBS is the leading mechanism that suppresses superconductivity, at higher disorder the experimental results can only be understood if the smearing of the density of states due to intraband electron lifetime effects is considered.

cond-mat.supr-con↗

arXiv2006

The effect of magnetic impurities in a two-band superconductor: A point-contact study of Mn-substituted MgB2 single crystals

We present the first results of directional point-contact measurements in Mg_{1-x}Mn_{x}B_2 single crystals, with x up to 0.015 and bulk T_c down to 13.3 K. The order parameters Delta_{sigma} and Delta_{pi} were obtained by fitting the conductance curves with the two-band Blonder-Tinkham-Klapwijk (BTK) model. Both Delta_{pi} and Delta_{sigma} decrease with the critical temperature of the junctions T_c^A, but remain clearly distinct up to the highest Mn content. Once analyzed within the Eliashberg theory, the results indicate that spin-flip scattering is dominant in the sigma band, as also confirmed by first-principle band structure calculations.

cond-mat.supr-con↗

arXiv2005

Superconductivity in lithium, potassium and aluminium under extreme pressure: A first-principles study

Extreme pressure strongly affects the superconducting properties of ``simple'' elemental metals, like Li, K and Al. Pressure induces superconductivity in Li (as high as 17 K), while suppressing it in Al. We report first-principles investigations of the superconducting properties of dense Li, K and Al based on a recently proposed, parameter-free, method. Our results show an unprecedented agreement with experiments, assess the predictive power of the method over a wide range of densities and electron-phonon couplings, and provide predictions for K, where no experiments exist so far. More importantly, our results help uncovering the physics of the different behaviors of Li and Al in terms of phonon softening and Fermi surface nesting in Li.

cond-mat.supr-con↗

arXiv2005

Ab-initio theory of superconductivity - I: Density functional formalism and approximate functionals

A novel approach to the description of superconductors in thermal equilibrium is developed within a formally exact density-functional framework. The theory is formulated in terms of three ``densities'': the ordinary electron density, the superconducting order parameter, and the diagonal of the nuclear N-body density matrix. The electron density and the order parameter are determined by Kohn-Sham equations that resemble the Bogoliubov-de Gennes equations. The nuclear density matrix follows from a Schroedinger equation with an effective N-body interaction. These equations are coupled to each other via exchange-correlation potentials which are universal functionals of the three densities. Approximations of these exchange-correlation functionals are derived using the diagrammatic techniques of many-body perturbation theory. The bare Coulomb repulsion between the electrons and the electron-phonon interaction enter this perturbative treatment on the same footing. In this way, a truly ab-initio description is achieved which does not contain any empirical parameters.

cond-mat.supr-con↗

arXiv2005

Ab-initio theory of superconductivity - II: Applications to elemental metals

The density functional theory for superconductors developed in the preceding article [cond-mat/0408685] is applied to the calculation of superconducting properties of several elemental metals. In particular, we present results for the transition temperature, for the gap at zero temperature, and for thermodynamic properties like the specific heat. We obtain an unprecedented agreement with experimental results. Superconductors both with strong and weak electron-phonon coupling are equally well described. This demonstrates that, as far as conventional superconductivity is concerned, the first-principles prediction of superconducting properties is feasible.

cond-mat.supr-con↗

arXiv2005

Superconducting properties of MgB2 from first principles

Solid MgB$_2$ has rather interesting and technologically important properties, such as a very high superconducting transition temperature. Focusing on this compound, we report the first non-trivial application of a novel density-functional-type theory for superconductors, recently proposed by the authors. Without invoking any adjustable parameters, we obtain the transition temperature, the gaps, and the specific heat of MgB$_2$ in very good agreement with experiment. Moreover, our calculations show how the Coulomb interaction acts differently on s and p states, thereby stabilizing the observed superconducting phase.

cond-mat.supr-con↗

arXiv2004

Two-band Eliashberg equations and the experimental Tc of the diboride Mg1-xAlxB2

The variation of the superconducting critical temperature Tc as a function of x in the diboride Mg1-xAlxB2 has been studied in the framework of the two-bands Eliashberg theory and traditional phonon coupling mechanism. We have solved the two-bands Eliashberg equations using first-principle calculations or simple assumptions for the variation of the relevant physical quantities. We have found that the experimental Tc curve can be explained only if the Coulomb pseudopotential changes with x by tuning the Fermi level toward the sigma band edge. In polycrystal samples the x dependence of the sigma and pi-band gap has been found and is in agreement with experiments.

cond-mat.supr-con↗

arXiv2001

Role of structural relaxations, chemical substitutions and polarization fields on the potential line-up in [0001] wurtzite GaN/Al systems

First-principles full-potential linearized augmented plane wave (FLAPW) calculations are performed to clarify the role of the interface geometry on piezoelectric fields and on potential line-ups at the [0001]-wurtzite and [111]-zincblende GaN/Al junctions. The electric fields (polarity and magnitude) are found to be strongly affected by atomic relaxations in the interface region. A procedure is tested to evaluate the Schottky barrier in the presence of electric fields and used to show that their effect is quite small (a few tenths of an eV). These calculations assess the rectifying behaviour of the GaN/Al contact, giving very good agreement with experimental values for the barrier. Stimulated by the complexity of the problem, we disentangle chemical and structural effects on the relevant properties (such as the potential discontinuity and electric fields) by studying auxiliary unrelaxed nitride/metal systems. Focusing on simple electronegativity arguments, we outline the leading mechanisms that result in the final values of the electric fields and Schottky barriers in these ideal interfaces. Finally, the transitivity rule in the presence of two inequivalent junctions is proved to give reliable results.

cond-mat.mtrl-sci↗

arXiv2001

Electron transport properties of MgB2 in the normal state

We have measured the resistivity and the Seebeck coefficient of a MgB2 sintered sample. The temperature dependence of resistivity is fitted well by a generalized Bloch-Gruneisen equation with a Debye temperature of 1050 K. The Seebeck coefficient is given by the sum of a diffusive and a phonon drag term and the behavior in the temperature region $% Tc<T<0.1Θ_{R}$ follows a relationship $AT+BT^{3}$ where the two terms are proportional to the electron and to the phonon specific heat, respectively. The phonon drag term, here emphasized for the first time, is rather large, indicating a strong electron-phonon interaction. The diffusive term is positive and increases with Al doping. The comparison of the experimental values with calculations including precise electronic structure suggests that $σ$ bands give the main contribution to the Seebeck effect.

cond-mat.supr-con↗

arXiv2001

Electronic and structural properties of superconducting MgB$_2$, CaSi$_2$ and related compounds

We report a detailed study of the electronic and structural properties of the 39K superconductor \mgbtwo and of several related systems of the same family, namely \mgalbtwo, \bebtwo, \casitwo and \cabesi. Our calculations, which include zone-center phonon frequencies and transport properties, are performed within the local density approximation to the density functional theory, using the full-potential linearized augmented plane wave (FLAPW) and the norm-conserving pseudopotential methods. Our results indicate essentially three-dimensional properties for these compounds; however, strongly two-dimensional $σ$-bonding bands contribute significantly at the Fermi level. Similarities and differences between \mgbtwo and \bebtwo (whose superconducting properties have not been yet investigated) are analyzed in detail. Our calculations for \mgalbtwo show that metal substitution cannot be fully described in a rigid band model. \casitwo is studied as a function of pressure, and Be substitution in the Si planes leads to a stable compound similar in many aspects to diborides.

cond-mat.supr-con↗

arXiv2001

Electronic and structural properties of superconducting diborides and calcium disilicide in the $\rm AlB_2$ structure

We report a detailed study of the electronic and structural properties of the 39K superconductor \mgbtwo and of several related systems of the same family, namely \mgalbtwo, \bebtwo, \casitwo and \cabesi. Our calculations, which include zone-center phonon frequencies and transport properties, are performed within the local density approximation to the density functional theory, using the full-potential linearized augmented plane wave (FLAPW) and the norm-conserving pseudopotential methods. Our results indicate essentially three-dimensional properties for these compounds; however, strongly two-dimensional $σ$-bonding bands contribute significantly at the Fermi level. Similarities and differences between \mgbtwo and \bebtwo (whose superconducting properties have not been yet investigated) %it is not yet know if it is a superconductor) are analyzed in detail. Our calculations for \mgalbtwo show that metal substitution cannot be fully described in a rigid band model. \casitwo is studied as a function of pressure, and Be substitution in the Si planes leads to a stable compound similar in many aspects to diborides.

cond-mat.supr-con↗

arXiv2000

Metal induced gap states and Schottky barrier heights at non-reactive GaN/noble metal interfaces

We present ab-initio local density FLAPW calculations on non-reactive N-terminated [001] ordered GaN/Ag and GaN/Au interfaces and compare the results (such as metal induced gap states and Schottky barrier heights) with those obtained for GaN/Al, in order to understand the dependence of the relevant electronic properties on the deposited metal. Our results show that the density of gap states is appreciable only in the first semiconductor layer close to the interface. The decay length of the gap states in the semiconductor side is about 2.0 $\pm$ 0.1 Å$\:$ and is independent of the deposited metal, therefore being to a good extent a bulk property of GaN. Our calculated values of the Schottky barrier heights are $Φ_{B_p}(GaN/Ag)$ = 0.87 eV and $Φ_{B_p}(GaN/Au)$ = 1.08 eV; both values are smaller than the GaN/Al value ($Φ_{B_p}(GaN/Al)$ = 1.51 eV) and this quite large spread of values excludes the possibility of a Fermi level pinning within the GaN band gap. Because of the low screening in GaN, the potential barrier at the junction is strongly affected by the structural arrangement of the first metal layer at the interface. This leads to quite large variations of the Schottky barrier height as a function of the metal, in contrast with the behavior of GaAs/metal interfaces.

cond-mat.mtrl-sci↗

arXiv1998

Influence of the exchange reaction on the electronic structure of GaN/Al junctions

Ab-initio calculations have been used to study the influence of the interface morphology and, notably, of the exchange reaction on the electronic properties of Al/GaN (100) interfaces. In particular, the effects of interface structure (i.e. interfacial bond lengths, semiconductor surface polarity, and reacted intralayers) on the SBH at the Al/GaN (001) junction are specifically addressed. The electronic structure of the following atomic configurations have been investigated theoretically: (i) an abrupt, relaxed GaN/Al interface; (ii) an interface which has undergone one monolayer of exchange reaction; and interfaces with a monolayer-thick interlayer of (iii) AlN and (iv) Ga$_{0.5}$Al$_{0.5}$N. Intermixed interfaces are found to pin the interface Fermi level at a position not significantly different from that of an abrupt interface. Our calculations also show that the interface band line--up is not strongly dependent on the interface morphology changes studied. The p-type SBH is reduced by less than 0.1 eV if the GaN surface is Ga-terminated compared to the N-terminated one. Moreover, we show that both an ultrathin Ga$_x$Al$_{1-x}$N ($x$ = 0, 0.5) intralayer and a Ga$\leftrightarrow$Al atomic swap at the interface does not significantly affect the Schottky barrier height.

cond-mat.mtrl-sci↗

arXiv1997

Ab-initio study of oxygen vacancies in alpha-quartz

Extrinsic levels, formation energies, and relaxation geometries are calculated ab initio for oxygen vacancies in alpha-quartz SiO2. The vacancy is found to be thermodynamically stable in the charge states Q=+3, Q=0, Q=--2, and Q=-3. The charged states are stabilized by large and asymmetric distortions near the vacancy site. Concurrently, Franck-Condon shifts for absorption and recombination related to these states are found to be strongly asymmetric. In undoped quartz, the ground state of the vacancy is the neutral charge state, while for moderate p-type and n-type doping, the +3 and -3 states are favored, respectively, over a wide Fermi level window. Optical transitions related to the vacancy are predicted at around 3 eV and 6.5 eV (absorption) and 2.5 to 3.0 eV (emission), depending on the charge state of the ground state.

cond-mat.mtrl-sci↗