arXiv subjects

S. Miwa

Publications and source records attributed to S. Miwa.

9 recordsLinked to original sources

arXiv2026

Temperature dependence of charge-to-spin conversion in rhombohedral (110) bismuth thin film

The amplitude of charge-to-spin conversion, namely the spin Hall effect (SHE), in bismuth (Bi) strongly depends on its crystal orientation. The conversion efficiency at room temperature in rhombohedral (110) bismuth is notably large as expected from its large spin-orbit interaction, and such a large SHE is ascribed to the large effective g-factor in bismuth [N. Fukumoto et al., Proc. Nat. Acad. Sci. 120, e2215030120 (2023)]. Despite the successful observation of the large conversion efficiency, a more detailed physical mechanism of the SHE in (110) bismuth is still elusive and under debate. In this work, we investigate the temperature dependence of charge-to-spin conversion in an epitaxial Bi(110)/Ni bilayer system using the second harmonic Hall method, revealing that both spin Hall conductivity and spin diffusion length augment with decreasing temperature. This finding suggests that spin scattering in (110) bismuth is dominated by the Elliott-Yafet mechanism, and the charge-to-spin conversion is mainly attributed to skew scattering.

cond-mat.mtrl-sci↗

arXiv2020

Electrical Control for Extension of Ramsey Spin Coherence Time of Ion-Implanted Nitrogen Vacancy Centers in diamond

The extension of the spin coherence times is a crucial issue for quantum information and quantum sensing. In solid state systems, suppressing noises with various techniques have been demonstrated. On the other hand, an electrical control for suppression is important toward individual controls of on-chip quantum information devices. Here we show the electrical control for extension of the spin coherence times of 40 nm-deep ion-implanted single nitrogen vacancy center spins in diamond by suppressing magnetic noises. We applied 120 V DC across two contacts spaced by 10 micrometers. The spin coherence times, estimated from a free-induction-decay and a Hahn-echo decay, were increased up to about 10 times (reaching 10 microseconds) and 1.4 times (reaching 150 microseconds), respectively. From the quantitative analysis, the dominant decoherence source depending on the applied static electric field was elucidated. The electrical control for extension can deliver a sensitivity enhancement to the DC sensing of temperature, pressure and electric (but not magnetic) fields, opening a new technique in solid-state quantum information devices.

quant-ph↗

arXiv2020

Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger local strain into the Si channel by changing a capping insulator. The highest MR ratio of 1.4% is achieved in the Si-LSVs through these improvements, with significant roles played by a reduction in the resistance-area product of the ferromagnetic contacts and an enhancement of the momentum relaxation time in the Si channel.

physics.app-ph↗

arXiv2020

Sizable spin-transfer torque in Bi/Ni80Fe20 bilayer film

The search for efficient spin conversion in Bi has attracted great attention in spin-orbitronics. In the present work, we employ spin-torque ferromagnetic resonance to investigate spin conversion in Bi/Ni80Fe20(Py) bilayer films with continuously varying Bi thickness. In contrast with previous studies, sizable spin-transfer torque (i.e., a sizable spin-conversion effect) is observed in Bi/Py bilayer film. Considering the absence of spin conversion in Bi/yttrium-iron-garnet bilayers and the enhancement of spin conversion in Bi-doped Cu, the present results indicate the importance of material combinations to generate substantial spin-conversion effects in Bi.

cond-mat.mes-hall↗

arXiv2019

Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature

Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundamental part of the magnetic logic gate (MLG) that enables reconfigurable and nonvolatile NAND or OR operation in one device. The device for the spin XOR gate consists of three iron (Fe)/cobalt (Co)/magnesium oxide (MgO) electrodes, i.e., two input and one output electrodes. Spins are injected into the Si channel from the input electrodes whose spin angular momentum corresponds to the binary input 1 or 0. The spin drift effect is controlled by a lateral electric field in the Si channel to adjust the spin accumulation voltages under two different parallel configurations, corresponding to (1, 1) and (0, 0), so that they exhibit the same value. As a result, the spin accumulation voltage detected by the output electrode exhibits three different voltages, represented by an XOR gate. The one-dimensional spin drift-diffusion model clearly explains the obtained XOR behavior. Charge current detection of the spin XOR gate is also demonstrated. The detected charge current has a maximum of 0.94 nA, the highest value in spin XOR gates reported thus far. Furthermore, gate voltage modulation of the spin XOR gate is also demonstrated, which enables operation of multiple MLG devices.

physics.app-ph↗

arXiv2017

Integer, fractional and side band injection locking of spintronic feedback nano-oscillator to microwave signal

In this article we demonstrate the injection locking of recently demonstrated spintronic feedback nano oscillator to microwave magnetic fields at integers as well fractional multiples of its auto oscillation frequency. Feedback oscillators have delay as a new degree of freedom which is absent for spin-transfer torque based oscillators, which gives rise to side peaks along with a main peak. We show that it is also possible to lock the oscillator on its side band peaks, which opens a new avenue to phase locked oscillators with large frequency differences. We observe that for low driving fields, side band locking improves the quality factor of the main peak, whereas for higher driving fields the main peak is suppressed. Further, measurements at two field angles provide some insight into the role of symmetry of oscillation orbit in determining the fractional locking.

cond-mat.mes-hall↗

arXiv2016

Coherent microwave generation by spintronic feedback oscillator

The transfer of spin angular momentum to a nanomagnet from a spin polarized current provides an efficient means of controlling the magnetization direction in nanomagnets. A unique consequence of this spin torque is that the spontaneous oscillations of the magnetization can be induced by applying a combination of a dc bias current and a magnetic field. Here we experimentally demonstrate a different effect, which can drive a nanomagnet into spontaneous oscillations without the need of external spin torque injection. For the demonstration of this effect, we use a nano-pillar of magnetic tunnel junction (MTJ) powered by a dc current and connected to a coplanar waveguide (CPW) lying above the free layer of the MTJ. Any fluctuation of the free layer magnetization is converted into oscillating voltage via the tunneling magneto-resistance effect and is fed back into the MTJ by the CPW through inductive coupling. As a result of this feedback, the magnetization of the free layer can be driven into a continual precession. The combination of MTJ and CPW behaves similar to a laser system and outputs a stable rf power with quality factor exceeding 10,000.

cond-mat.mes-hall↗

arXiv2014

Perfect selective alignment of nitrogen-vacancy center in diamond

Nitrogen-vacancy (NV) centers in diamond have attracted significant interest because of their excellent spin and optical characteristics for quantum information and metrology. To take advantage of the characteristics, the precise control of the orientation of the N-V axis in the lattice is essential. Here we show that the orientation of more than 99 % of the NV centers can be aligned along the [111]-axis by CVD homoepitaxial growth on (111)-substrates. We also discuss about mechanisms of the alignment. Our result enables a fourfold improvement in magnetic-field sensitivity and opens new avenues to the optimum design of NV center devices.

cond-mat.mes-hall↗

arXiv2013

RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed.

cond-mat.mtrl-sci↗