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arXiv · 1307.2745

RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance

K. Konishi·D. K. Dixit·A. A. Tulapurkar·S. Miwa·T. Nozaki·H. Kubota·A. Fukushima·S. Yuasa·Y. Suzuki
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Abstract

The radio-frequency (RF) voltage amplification property of a tunnel magnetoresistance device driven by an RF external-magnetic-field-induced ferromagnetic resonance was studied. The proposed device consists of a magnetic tunnel junction (MTJ) and an electrically isolated coplanar waveguide. The input RF voltage applied to the waveguide can excite the resonant dynamics in the free layer magnetization, leading to the generation of an output RF voltage under a DC bias current. The dependences of the RF voltage gain on the static external magnetic field strength and angle were systematically investigated. The design principles for the enhancement of the gain factor are also discussed.

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K. Konishi, D. K. Dixit, A. A. Tulapurkar, S. Miwa, T. Nozaki, H. Kubota, A. Fukushima, S. Yuasa, Y. Suzuki. 2013-07-10. RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance. https://doi.org/10.1063/1.4803050

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