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S. Prawer

Publications and source records attributed to S. Prawer.

At least 37 records · Page 2Linked to original sources

Reply on the comment on the paper "Superconducting transition in Nb nanowires fabricated using focused ion beam"

In this communication we present our response to the recent comment of A. Engel regarding our paper on FIB- fabricated Nb nanowires (see Vol. 20 (2009) Pag. 465302). After further analysis and additional experimental evidence, we conclude that our interpretation of the experimental results in light of QPS theory is still valid when compared with the alternative proximity-based model as proposed by A. Engel.

cond-mat.mes-hall↗

Nano-Raman spectroscopy of silicon surfaces

Near-field enhanced, nano-Raman spectroscopy has been successfully used to probe the surface chemistry of silicon prepared using standard wafer cleaning and processing techniques. The results demonstrate the utility of this measurement for probing the local surface chemical nano-environment with very high sensitivity. Enhancements were observed for the vibrational (stretching) modes of Si-H, F-Si-H and possibly also B-O-Si consistent with the surface treatments applied. The nano-probes did not enhance the phononic features of the silicon substrate.

cond-mat.mtrl-sci↗

Low temperature optical characterization of near infrared single photon emitters in nanodiamonds

In this paper, we study the optical properties of single defects emitting in the near infrared in nanodiamonds at liquid helium temperature. The nanodiamonds are synthesized using a microwave chemical vapor deposition method followed by nickel implantation and annealing. We show that single defects exhibit several striking features at cryogenic temperature: the photoluminescence is strongly concentrated into a sharp zero-phonon line in the near infrared, the radiative lifetime is in the nanosecond range and the emission is perfectly linearly polarized. The spectral stability of the defects is then investigated. An optical resonance linewidth of 4 GHz is measured using resonant excitation on the zero-phonon line. Although Fourier-transform limited emission is not achieved, our results show that it might be possible to use consecutive photons emitted in the near infrared by single defects in diamond nanocrystals to perform two photon interference experiments, which are at the heart of linear quantum computing protocols.

quant-ph↗

Photophysics of novel diamond based single photon emitters

A detailed study of the photophysical properties of several novel color centers in chemical vapor deposition diamond is presented. These emitters show narrow luminescence lines in the near infra-red. Single photon emission was verified with continuous and pulsed excitation with emission rates at saturation in the MHz regime, whilst direct lifetime measurements reveal excited state lifetimes ranging from 1-14 ns. In addition, a number of quantum emitters demonstrate two level behavior with no bunching present in the second order correlation function. An improved method of evaluating the quantum efficiency through the direct measurement of the collection efficiency from two level emitters is presented and discussed. \

quant-ph↗

Nano-manipulation of diamond-based single photon sources

The ability to manipulate nano-particles at the nano-scale is critical for the development of active quantum systems. This paper presents a new technique to manipulate diamond nano-crystals at the nano-scale using a scanning electron microscope, nano-manipulator and custom tapered optical fibre probes. The manipulation of a ~ 300 nm diamond crystal, containing a single nitrogen-vacancy centre, onto the endface of an optical fibre is demonstrated. The emission properties of the single photon source post manipulation are in excellent agreement with those observed on the original substrate.

quant-ph↗

A highly efficient two level diamond based single photon source

An unexplored diamond defect centre which is found to emit stable single photons at a measured rate of 1.6 MHz at room temperature is reported. The novel centre, identified in chemical vapour deposition grown diamond crystals, exhibits a sharp zero phonon line at 734 nm with a full width at half maximum of ~ 4 nm. The photon statistics confirm the center is a single emitter and provides direct evidence of the first true two-level single quantum system in diamond.

quant-ph↗

Single photon quantum non-demolition in the presence of inhomogeneous broadening

Electromagnetically induced transparency (EIT) has been often proposed for generating nonlinear optical effects at the single photon level; in particular, as a means to effect a quantum non-demolition measurement of a single photon field. Previous treatments have usually considered homogeneously broadened samples, but realisations in any medium will have to contend with inhomogeneous broadening. Here we reappraise an earlier scheme [Munro \textit{et al.} Phys. Rev. A \textbf{71}, 033819 (2005)] with respect to inhomogeneities and show an alternative mode of operation that is preferred in an inhomogeneous environment. We further show the implications of these results on a potential implementation in diamond containing nitrogen-vacancy colour centres. Our modelling shows that single mode waveguide structures of length $200 μ\mathrm{m}$ in single-crystal diamond containing a dilute ensemble of NV$^-$ of only 200 centres are sufficient for quantum non-demolition measurements using EIT-based weak nonlinear interactions.

quant-ph↗

Coupling of nitrogen-vacancy centers in diamond to a GaP waveguide

The optical coupling of guided modes in a GaP waveguide to nitrogen-vacancy (NV) centers in diamond is demonstrated. The electric field penetration into diamond and the loss of the guided mode are measured. The results indicate that the GaP-diamond system could be useful for realizing coupled microcavity-NV devices for quantum information processing in diamond.

quant-ph↗

Decoherence measurement of single phonons using spectral interference

A technique to measure the decoherence time of optical phonons in a solid is presented. Phonons are excited with a pair of time delayed 80 fs, near infrared pulses via spontaneous, transient Raman scattering. The fringe visibility of the resulting Stokes pulse pair, as a function of time delay, is used to measure the phonon dephasing time. The method avoids the need to use either narrow band or few femtosecond pulses and is useful for low phonon excitations. The dephasing time of phonons created in bulk diamond is measured to be tau = 6.8ps (1.56cm-1).

quant-ph↗

Creating diamond color centers for quantum optical applications

Nitrogen vacancy (NV) centers in diamond have distinct promise as solid-state qubits. This is because of their large dipole moment, convenient level structure and very long room-temperature coherence times. In general, a combination of ion irradiation and subsequent annealing is used to create the centers, however for the rigorous demands of quantum computing all processes need to be optimized, and decoherence due to the residual damage caused by the implantation process itself must be mitigated. To that end we have studied photoluminescence (PL) from NV$^-$, NV$^0$ and GR1 centers formed by ion implantation of 2MeV He ions over a wide range of fluences. The sample was annealed at $600^{\circ}$C to minimize residual vacancy diffusion, allowing for the concurrent analysis of PL from NV centers and irradiation induced vacancies (GR1). We find non-monotic PL intensities with increasing ion fluence, monotonic increasing PL in NV$^0$/NV$^-$ and GR1/(NV$^0$ + NV$^1$) ratios, and increasing inhomogeneous broadening of the zero-phonon lines with increasing ion fluence. All these results shed important light on the optimal formation conditions for NV qubits. We apply our findings to an off-resonant photonic quantum memory scheme using vibronic sidebands.

quant-ph↗

Single nitrogen vacancy centers in chemical vapor deposited diamond nanocrystals

Nanodiamond crystals containing single color centers have been grown by chemical vapor deposition (CVD). The fluorescence from individual crystallites was directly correlated with crystallite size using a combined atomic force and scanning confocal fluorescence microscope. Under the conditions employed, the optimal size for single optically active nitrogen-vacancy (NV) center incorporation was measured to be 60 to 70 nm. The findings highlight a strong dependence of NV incorporation on crystal size, particularly with crystals less than 50 nm in size.

cond-mat.mtrl-sci↗

Stark shift control of single optical centers in diamond

Lifetime limited optical excitation lines of single nitrogen vacancy (NV) defect centers in diamond have been observed at liquid helium temperature. They display unprecedented spectral stability over many seconds and excitation cycles. Spectral tuning of the spin selective optical resonances was performed via the application of an external electric field (i.e. the Stark shift). A rich variety of Stark shifts were observed including linear as well as quadratic components. The ability to tune the excitation lines of single NV centers has potential applications in quantum information processing.

quant-ph↗

Room temperature coherent control of coupled single spins in solid

Coherent coupling between single quantum objects is at the heart of modern quantum physics. When coupling is strong enough to prevail over decoherence, it can be used for the engineering of correlated quantum states. Especially for solid-state systems, control of quantum correlations has attracted widespread attention because of applications in quantum computing. Such coherent coupling has been demonstrated in a variety of systems at low temperature1, 2. Of all quantum systems, spins are potentially the most important, because they offer very long phase memories, sometimes even at room temperature. Although precise control of spins is well established in conventional magnetic resonance3, 4, existing techniques usually do not allow the readout of single spins because of limited sensitivity. In this paper, we explore dipolar magnetic coupling between two single defects in diamond (nitrogen-vacancy and nitrogen) using optical readout of the single nitrogen-vacancy spin states. Long phase memory combined with a defect separation of a few lattice spacings allow us to explore the strong magnetic coupling regime. As the two-defect system was well-isolated from other defects, the long phase memory times of the single spins was not diminished, despite the fact that dipolar interactions are usually seen as undesirable sources of decoherence. A coherent superposition of spin pair quantum states was achieved. The dipolar coupling was used to transfer spin polarisation from a nitrogen-vacancy centre spin to a nitrogen spin, with optical pumping of a nitrogen-vacancy centre leading to efficient initialisation. At the level anticrossing efficient nuclear spin polarisation was achieved. Our results demonstrate an important step towards controlled spin coupling and multi-particle entanglement in the solid state.

quant-ph↗

Implantation of labelled single nitrogen vacancy centers in diamond using 15N

Nitrogen-vacancy (NV-) color centers in diamond were created by implantation of 7 keV 15N (I = 1/2) ions into type IIa diamond. Optically detected magnetic resonance was employed to measure the hyperfine coupling of the NV- centers. The hyperfine spectrum from 15NV- arising from implanted 15N can be distinguished from 14NV- centers created by native 14N (I = 1) sites. Analysis indicates 1 in 40 implanted 15N atoms give rise to an optically observable 15NV- center. This report ultimately demonstrates a mechanism by which the yield of NV- center formation by nitrogen implantation can be measured.

cond-mat.mtrl-sci↗

Controlled single electron transfer between Si:P dots

We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.

cond-mat.mes-hall↗

Photochromism in single nitrogen-vacancy defect in diamond

Photochromism in single nitrogen-vacancy optical centers in diamond is demonstrated. Time-resolved optical spectroscopy shows that intense irradiation at 514 nm switches the nitrogen-vacancy defects to the negative form. This defect state relaxes back to the neutral form under dark conditions. Temporal anticorrelation of photons emitted by the different charge states of the optical center unambiguously indicates that the nitrogen-vacancy defect accounts for both 575 nm and 638 nm emission bands. Possible mechanism of photochromism involving nitrogen donors is discussed.

cond-mat.mtrl-sci↗

Diamond chemical vapor deposition on optical fibers for fluorescence waveguiding

A technique has been developed for depositing diamond crystals on the endfaces of optical fibers and capturing the fluorescence generated by optically active defects in the diamond into the fiber. This letter details the diamond growth on optical fibers and transmission of fluorescence through the fiber from the nitrogen-vacancy (N-V) color center in diamond. Control of the concentration of defects incorporated during the chemical vapor deposition (CVD) growth process is also demonstrated. These are the first critical steps in developing a fiber coupled single photon source based on optically active defect centers in diamond.

cond-mat.mtrl-sci↗

Fabrication of single nickel-nitrogen defects in diamond by chemical vapor deposition

Fabrication of single nickel-nitrogen (NE8) defect centers in diamond by chemical vapor deposition is demonstrated. Under continuous-wave 745 nm laser excitation single defects were induced to emit single photon pulses at 797 nm with a linewidth of 1.5 nm at room temperature. Photon antibunching of single centers was demonstrated using a Hanbury-Brown and Twiss interferometer. Confocal images revealed approximately 10^6 optically active sites/cm^2 in the synthesized films. The fabrication of an NE8 based single photon source in synthetic diamond is important for fiber based quantum cryptography. It can also be used as an ideal point-like source for near-field optical microscopy.

cond-mat.mtrl-sci↗