arXiv subjects

S. Prawer

Publications and source records attributed to S. Prawer.

At least 19 recordsLinked to original sources

arXiv2020

Anisotropic three-dimensional weak localization in ultrananocrystalline diamond films with nitrogen inclusions

We present a study of the structural and electronic properties of ultra-nanocrystalline diamond films that were modified by adding nitrogen to the gas mixture during chemical vapour deposition growth. Hall bar devices were fabricated from the resulting films to investigate their electrical conduction as a function of both temperature and magnetic field. Through low-temperature magnetoresistance measurements, we present strong evidence that the dominant conduction mechanism in these films can be explained by a combination of 3D weak localization (3DWL) and thermally activated hopping at higher temperatures. An anisotropic 3DWL model is then applied to extract the phase-coherence time as function of temperature, which shows evidence of a power law dependence in good agreement with theory.

cond-mat.mes-hall↗

arXiv2020

Cryogenic platform for coupling color centers in diamond membranes to a fiberbased microcavity

We operate a fiberbased cavity with an inserted diamond membrane containing ensembles of silicon vacancy centers (SiV$^-$) at cryogenic temperatures $ \geq4~$K. The setup, sample fabrication and spectroscopic characterization is described, together with a demonstration of the cavity influence by the Purcell effect. This paves the way towards solid state qubits coupled to optical interfaces as long-lived quantum memories.

quant-ph↗

arXiv2019

Enhanced widefield quantum sensing with nitrogen-vacancy ensembles using diamond nanopillar arrays

Quantum sensors based on optically active defects in diamond such as the nitrogen vacancy (NV) centre represent a promising platform for nanoscale sensing and imaging of magnetic, electric, temperature and strain fields. Enhancing the optical interface to such defects is key to improving the measurement sensitivity of these systems. Photonic nanostructures are often employed in the single emitter regime for this purpose, but their applicability to widefield sensing with NV ensembles remains largely unexplored. Here we fabricate and characterize closely-packed arrays of diamond nanopillars, each hosting its own dense, near-surface ensemble of NV centres. We explore the optimal geometry for diamond nanopillars hosting NV ensembles and realise enhanced spin and photoluminescence properties which lead to increased measurement sensitivities (greater than a factor of 3) when compared to unpatterned surfaces. Utilising the increased measurement sensitivity, we image the mechanical stress tensor in each nanopillar across the arrays and show the fabrication process has negligible impact on in-built stress compared to the unpatterned surface. Our results demonstrate that photonic nanostructuring of the diamond surface is a viable strategy for increasing the sensitivity of ensemble-based widefield sensing and imaging.

physics.optics↗

arXiv2016

Characterization of Three-Dimensional Microstructures in Single Crystal Diamond

We report on the Raman and photoluminescence characterization of three-dimensional microstructures created in single crystal diamond with a Focused Ion Beam (FIB) assisted lift-off technique. The method is based on MeV ion implantation to create a buried etchable layer, followed by FIB patterning and selective etching. In the applications of such microstructures where the properties of high quality single crystal diamond are most relevant, residual damage after the fabrication process represents a critical technological issue. The results of Raman and photoluminescence characterization indicate that the partial distortion of the sp3-bonded lattice and the formation of isolated point defects are effectively removed after thermal annealing, leaving low amounts of residual damage in the final structures. Three-dimensional microstructures in single-crystal diamond offer a large range of applications, such as quantum optics devices and fully integrated opto mechanical assemblies.

cond-mat.mtrl-sci↗

arXiv2016

Fabrication of Ultrathin Single-Crystal Diamond Membranes

We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from single-crystal starting material, the thinnest layers achieved to date are 210 nm thick.

cond-mat.mtrl-sci↗

arXiv2016

An upper limit on the lateral vacancy diffusion length in diamond

Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used, experiments have shown that vacancy-related substrate modification can be inferred tens of microns away from the edge of the mask used to define the implanted region. This could be due to fast diffusion of vacancies from the implanted area during annealing or to a geometric effect related to ion scattering around the mask edges. For quantum and single-atom devices, stray ion damage can be deleterious and must be minimized. In order to profile the distribution of implantation-induced damage, we have used the nitrogen-vacancy colour centre as a sensitive marker for vacancy concentration and distribution following MeV He ion implantation into diamond and annealing. Results show that helium atoms implanted through a mask clamped to the diamond surface are scattered underneath the mask to distances in the range of tens of micrometers from the mask edge. Implantation through a lithographically defined and deposited mask, with no spacing between the mask and the substrate, significantly reduces the scattering to <5 m but does not eliminate it. These scattering distances are much larger than the theoretically estimated vacancy diffusion distance of 260 nm under similar conditions. This paper shows that diffusion, upon annealing, of vacancies created by ion implantation in diamond is limited and the appearance of vacancies many tens of micrometers from the edge of the mask is due to scattering effects.

cond-mat.mtrl-sci↗

arXiv2016

Structural transformation of implanted diamond layers during high temperature annealing

In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond-air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.

cond-mat.mtrl-sci↗

arXiv2016

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.

cond-mat.mtrl-sci↗

arXiv2015

Single-photon emitting diode in silicon carbide

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide (SiC) an ideal material to build such devices. Here, we demonstrate the fabrication of bright single photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of $>$300 kHz), and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single photon source is proposed. These results provide a foundation for the large scale integration of single photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

cond-mat.mtrl-sci↗

arXiv2013

On Chip Manipulation of Single Photons from a Diamond Defect

Operating reconfigurable quantum circuits with single photon sources is a key goal of photonic quantum information science and technology. We use an integrated waveguide device comprising of directional couplers and a reconfigurable thermal phase controller to manipulate single photons emitted from a chromium related colour centre in diamond. Observation of both a wave-like interference pattern and particle-like sub-Poissionian autocorrelation functions demonstrates coherent manipulation of single photons emitted from the chromium related centre and verifies wave particle duality.

quant-ph↗

arXiv2013

Splitting of photo-luminescent emission from nitrogen-vacancy centers in diamond induced by ion-damage-induced stress

We report a systematic investigation on the spectral splitting of negatively charged, nitrogen-vacancy (NV-) photo-luminescent emission in single crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a HPHT diamond, clearly distinguishable spectral components in the NV- emission develop over a range of 4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV- centers for ensemble quantum information protocols.

cond-mat.mtrl-sci↗

arXiv2012

Ambient Nanoscale Sensing with Single Spins Using Quantum Decoherence

Magnetic resonance detection is one of the most important tools used in life-sciences today. However, as the technique detects the magnetization of large ensembles of spins it is fundamentally limited in spatial resolution to mesoscopic scales. Here we detect the natural fluctuations of nanoscale spin ensembles at ambient temperatures by measuring the decoherence rate of a single quantum spin in response to introduced extrinsic target spins. In our experiments 45 nm nanodiamonds with single nitrogen-vacancy (NV) spins were immersed in solution containing spin 5/2 Mn^2+ ions and the NV decoherence rate measured though optically detected magnetic resonance. The presence of both freely moving and accreted Mn spins in solution were detected via significant changes in measured NV decoherence rates. Analysis of the data using a quantum cluster expansion treatment of the NV-target system found the measurements to be consistent with the detection of ~2,500 motionally diffusing Mn spins over an effective volume of (16 nm)^3 in 4.2 s, representing a reduction in target ensemble size and acquisition time of several orders of magnitude over state-of-the-art electron spin resonance detection. These measurements provide the basis for the detection of nanoscale magnetic field fluctuations with unprecedented sensitivity and resolution in ambient conditions.

cond-mat.mes-hall↗

arXiv2012

Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy (~MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickness mask allows the accurate modulation of the depth at which the microchannels are formed, from several μm deep up to the very surface of the sample. By means of cross-sectional transmission electron microscopy (TEM) we demonstrate that the technique allows the direct writing of amorphous (and graphitic, upon suitable thermal annealing) microstructures extending within the insulating diamond matrix in the three spatial directions, and in particular that buried channels embedded in a highly insulating matrix emerge and electrically connect to the sample surface at specific locations. Moreover, by means of electrical characterization both at room temperature and variable temperature, we investigate the conductivity and the charge-transport mechanisms of microchannels obtained by implantation at different ion fluences and after subsequent thermal processes, demonstrating that upon high-temperature annealing, the channels implanted above a critical damage density convert to a stable graphitic phase. These structures have significant impact for different applications, such as compact ionizing radiation detectors, dosimeters, bio-sensors and more generally diamond-based devices with buried three-dimensional all-carbon electrodes.

cond-mat.mtrl-sci↗

arXiv2012

Dynamic stabilization of the optical resonances of single nitrogen-vacancy centers in diamond

We report electrical tuning by the Stark effect of the excited-state structure of single nitrogen-vacancy (NV) centers located less than ~100 nm from the diamond surface. The zero-phonon line (ZPL) emission frequency is controllably varied over a range of 300 GHz. Using high-resolution emission spectroscopy, we observe electrical tuning of the strengths of both cycling and spin-altering transitions. Under resonant excitation, we apply dynamic feedback to stabilize the ZPL frequency. The transition is locked over several minutes and drifts of the peak position on timescales greater than ~100 ms are reduced to a fraction of the single-scan linewidth, with standard deviation as low as 16 MHz (obtained for an NV in bulk, ultra-pure diamond). These techniques should improve the entanglement success probability in quantum communications protocols.

quant-ph↗

arXiv2011

Depletion of nitrogen-vacancy color centers in diamond via hydrogen passivation

We show a marked reduction in the emission from nitrogen-vacancy (NV) color centers in single crystal diamond due to exposure of the diamond to hydrogen plasmas ranging from 700°C to 1000°C. Significant fluorescence reduction was observed beneath the exposed surface to at least 80mm depth after ~10 minutes, and did not recover after post-annealing in vacuum for seven hours at 1100°C. We attribute the fluorescence reduction to the formation of NVH centers by the plasma induced diffusion of hydrogen. These results have important implications for the formation of nitrogen-vacancy centers for quantum applications, and inform our understanding of the conversion of nitrogen-vacancy to NVH, whilst also providing the first experimental evidence of long range hydrogen diffusion through intrinsic high-purity diamond material.

cond-mat.mtrl-sci↗

arXiv2011

Wide range electrical tunability of single photon emission from chromium-based colour centres in diamond

We demonstrate electrical control of the single photon emission spectrum from chromium-based colour centres implanted in monolithic diamond. Under an external electric field the tunability range is typically three orders of magnitude larger than the radiative linewidth and at least one order of magnitude larger than the observed linewidth. The electric and magnetic field dependence of luminescence gives indications on the inherent symmetry and we propose Cr-X or X-Cr-Y type noncentrosymmetric atomic configurations as most probable candidates for these centres.

cond-mat.mes-hall↗

arXiv2010

Imaging and quantum efficiency measurement of chromium emitters in diamond

We present direct imaging of the emission pattern of individual chromium-based single photon emitters in diamond and measure their quantum efficiency. By imaging the excited state transition dipole intensity distribution in the back focal plane of high numerical aperture objective, we determined that the emission dipole is oriented nearly orthogonal to the diamond-air interface. Employing ion implantation techniques, the emitters were engineered with various proximities from the diamond-air interface. By comparing the decay rates from the single chromium emitters at different depths in the diamond crystal, an average quantum efficiency of 28% was measured.

cond-mat.other↗

arXiv2010

Superconducting transition in Nb nanowires fabricated using focused ion beam

Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour is evident. Resistance-temperature data for devices with a physical width of order 100 nm demonstrate suppression of superconductivity, leading to dissipative behaviour that is shown to be consistent with the activation of phase-slip below Tc. This study suggests that by exploiting the Ga-impurity poisoning introduced by the FIB into the periphery of the nanowire, a central superconducting phase-slip nanowire with sub-10 nm dimensions may be engineered within the core of the nanowire.

cond-mat.mes-hall↗