arXiv subjects

S. Straessler

Publications and source records attributed to S. Straessler.

13 recordsLinked to original sources

arXiv2005

Tunneling-percolation origin of nonuniversality: theory and experiments

A vast class of disordered conducting-insulating compounds close to the percolation threshold is characterized by nonuniversal values of transport critical exponent t, in disagreement with the standard theory of percolation which predicts t = 2.0 for all three dimensional systems. Various models have been proposed in order to explain the origin of such universality breakdown. Among them, the tunneling-percolation model calls into play tunneling processes between conducting particles which, under some general circumstances, could lead to transport exponents dependent of the mean tunneling distance a. The validity of such theory could be tested by changing the parameter a by means of an applied mechanical strain. We have applied this idea to universal and nonuniversal RuO2-glass composites. We show that when t > 2 the measured piezoresistive response Γ, i. e., the relative change of resistivity under applied strain, diverges logarithmically at the percolation threshold, while for t = 2, Γdoes not show an appreciable dependence upon the RuO2 volume fraction. These results are consistent with a mean tunneling dependence of the nonuniversal transport exponent as predicted by the tunneling-percolation model. The experimental results are compared with analytical and numerical calculations on a random-resistor network model of tunneling-percolation.

cond-mat.dis-nn↗

arXiv2003

A model of transport nonuniversality in thick-film resistors

We propose a model of transport in thick-film resistors which naturally explains the observed nonuniversal values of the conductance exponent t extracted in the vicinity of the percolation transition. Essential ingredients of the model are the segregated microstructure typical of thick-film resistors and tunneling between the conducting grains. Nonuniversality sets in as consequence of wide distribution of interparticle tunneling distances.

cond-mat.dis-nn↗

arXiv2003

Segregated tunneling-percolation model for transport nonuniversality

We propose a theory of the origin of transport nonuniversality in disordered insulating-conducting compounds based on the interplay between microstructure and tunneling processes between metallic grains dispersed in the insulating host. We show that if the metallic phase is arranged in quasi-one dimensional chains of conducting grains, then the distribution function of the chain conductivities g has a power-law divergence for g -> 0 leading to nonuniversal values of the transport critical exponent t. We evaluate the critical exponent t by Monte Carlo calculations on a cubic lattice and show that our model can describe universal as well nonuniversal behavior of transport depending on the value of few microstructural parameters. Such segregated tunneling-percolation model can describe the microstructure of a quite vast class of materials known as thick-film resistors which display universal or nonuniversal values of t depending on the composition.

cond-mat.dis-nn↗

arXiv2002

Critical behavior of the piezoresistive response in RuO2-glass composites

We re-analyse earlier measurements of resistance R and piezoresistance K in RuO2-based thick-film resistors. The percolating nature of transport in these systems is well accounted by values of the transport exponent t larger than its universal value t=2.0. Furthermore, we show that the RuO2 volume fraction dependence of the piezoresistance data fit well with a logarithmically divergence at the percolation thresold. We argue that the universality breakdown and divergent piezoresistive response could be understood in the framework of a tunneling-percolating model proposed a few years ago to apply in carbon-black--polymer composites. We propose a new tunneling-percolating theory based on the segregated microstructure common to many thick-film resistors, and show that this model can in principle describe the observed universality breakdown and the divergent piezoresistance.

cond-mat.dis-nn↗

arXiv2002

Piezoresistivity and conductance anisotropy of tunneling-percolating systems

Percolating networks based on interparticle tunneling conduction are shown to yield a logarithmic divergent piezoresistive response close to the critical point as long as the electrical conductivity becomes nonuniversal. At the same time, the piezoresistivity or, equivalently, the conductivity anisotropy exponent $λ$ remains universal also when the conductive exponent is not, suggesting a purely geometric origin of $λ$. We discuss our results in relation to the nature of transport for a variety of materials such as carbon-black--polymer composites and RuO_2-glass systems which show nonuniversal transport properties and coexistence between tunneling and percolating behaviors.

cond-mat.dis-nn↗

arXiv2002

Anisotropic random resistor networks: a model for piezoresistive response of thick-film resistors

A number of evidences suggests that thick-film resistors are close to a metal-insulator transition and that tunneling processes between metallic grains are the main source of resistance. We consider as a minimal model for description of transport properties in thick-film resistors a percolative resistor network, with conducting elements governed by tunneling. For both oriented and randomly oriented networks, we show that the piezoresistive response to an applied strain is model dependent when the system is far away from the percolation thresold, while in the critical region it acquires universal properties. In particular close to the metal-insulator transition, the piezoresistive anisotropy show a power law behavior. Within this region, there exists a simple and universal relation between the conductance and the piezoresistive anisotropy, which could be experimentally tested by common cantilever bar measurements of thick-film resistors.

cond-mat.dis-nn↗

arXiv2002

Piezoresistive anisotropy of percolative granular metals

The piezoresistive response of granular metals under uniaxial strain is strongly dependent on the concentration of the conducting phase. Here we show that the piezoresistive anisotropy is reduced as the system approaches its percolation thresold, following a power law behavior in the critical region. We propose a simple relation between the conductance and the piezoresistive anisotropy which could be used in relation to real materials and notably to the thick film resistors.

cond-mat.dis-nn↗

arXiv2001

Nonadiabatic Channels in the Superconducting Pairing of Fullerides

We show the intrinsic inconsistency of the conventional phonon mediated theory of superconductivity in relation to the observed properties of Rb$_3$C$_{60}$. The recent, highly accurate measurement of the carbon isotope coefficient $α_{\rm C}=0.21$, together with the high value of $T_c$ (30 K) and the very small Fermi energy $E_{\rm F}$ (0.25 eV), unavoidably implies the opening of nonadiabatic channels in the superconducting pairing. We estimate these effects and show that they are actually the key elements for the high value of $T_c$ in these materials compared to the very low values of graphite intercalation compounds.

cond-mat.supr-con↗

arXiv2001

Longitudinal and transversal piezoresistive response of granular metals

In this paper, we study the piezoresistive response and its anisotropy for a bond percolation model of granular metals. Both effective medium results and numerical Monte Carlo calculations of finite simple cubic networks show that the piezoresistive anisotropy is a strongly dependent function of bond probability p and of bond conductance distribution width Δg. We find that piezoresistive anisotropy is strongly suppressed as p is reduced and/or Δg is enhanced and that it vanishes at the percolation thresold p=p_c. We argue that a measurement of the piezoresistive anisotropy could be a sensitive tool to estimate critical metallic concentrations in real granular metals.

cond-mat.dis-nn↗

arXiv2000

Gauge factor enhancement driven by heterogeneity in thick-film resistors

We present a simple picture of the gauge factor (GF) enhancement in highly heterogeneous materials such as thick-film resistors. We show that when the conducting phase is stiffer than the insulating one, the local strains within this latter are enhanced with respect to the averaged macroscopic strain. Within a simple model of electron tunneling processes, we show that the enhanced local strain leads to values of GF higher than those expected for a homogeneous system. Moreover we provide formulas relating the enhancement of GF to the elastic and microstructural characteristics of TFRs.

cond-mat.dis-nn↗

arXiv2000

A survey of nonadiabatic superconductivity in cuprates and fullerides

High-$T_c$ superconductors are characterized by very low carrier densities. This feature leads to two fundamental consequences: on one hand the Fermi energies are correspondingly small and they can be of the same order of phonon frequencies. In such a situation nonadiabatic corrections arising from the breakdown of Migdal's theorem can not be longer neglected. In addition, small carrier densities imply poor screening and correlation effects have to be taken into account. We present a comprehensive overview of the theory of superconductivity generalized into the nonadiabatic regime which is qualitatively different from the conventional one. In this framework some of the observed properties of the cuprates and the fullerene compounds can be naturally accounted for, and a number of theoretical predictions are proposed that can be experimentally tested.

cond-mat.supr-con↗

arXiv2000

Failure of the Migdal-Eliashberg Theory of Superconductivity in Rb_3C_60

We discuss the compatibility of the most accurate experimental data with the ordinary Migdal-Eliashberg theory of superconductivity in the fullerene compound Rb_3C_60. By using different model phonon spectra we conclude that the experimental data can be fitted only by invoking an electron-phonon coupling of order λ\simeq 3. This exceedingly high value is unphysical and it is not consistent with the basic assumptions of the Migdal-Eliashberg theory. On the contrary, by relaxing the adiabatic hypothesis on which the Migdal-Eliashberg theory rests, the experimental data can be fitted by much more realistic values of λ. This generalized theory predicts also characteristic features absent in the Migdal-Eliashberg framework which can be experimentally tested.

cond-mat.supr-con↗

arXiv2000

Gauge factor of thick film resistors: outcomes of the variable range hopping model

Despite a large amount of data and numerous theoretical proposals, the microscopic mechanism of transport in thick film resistors remains unclear. However, recent low temperature measurements point toward a possible variable range hopping mechanism of transport. Here we examine how such a mechanism affects the gauge factor of thick film resistors. We find that at sufficiently low temperatures $T$, for which the resistivity follows the Mott's law $R(T)\sim \exp(T_0/T)^{1/4}$, the gauge factor GF is proportional to $(T_0/T)^{1/4}$. Moreover, the inclusion of Coulomb gap effects leads to ${\rm GF}\sim (T_0'/T)^{1/2}$ at lower temperatures. In addition, we study a simple model which generalizes the variable range hopping mechanism by taking into account the finite mean inter-grain spacing. Our results suggest a possible experimental verification of the validity of the variable range hopping in thick film resistors.

cond-mat.dis-nn↗