arXiv subjects

S. Studenikin

Publications and source records attributed to S. Studenikin.

6 recordsLinked to original sources

arXiv2026

Radiowave-induced Resistance Oscillations

Microwave-induced resistance oscillations (MIROs) occur when a 2D electron gas is subjected to radiation of frequency $ω= 2 πf$ and varying magnetic field $B$. MIROs are periodic in $1/B$, with the period determined by the radiation frequency $ω$, and their amplitude scales with the radiation power. Stepping from single-photon transitions between Landau levels, MIROs are found on the low-field side of the cyclotron resonance, $ω_c \lesssim ω$, where $ω_c$ is the cyclotron frequency. Here, we report on another class of magneto resistance oscillations, which are induced by high-intensity radiation in the radio frequency range and occur at $ω_c \gg ω$. These oscillations are independent of frequency $ω$, can be either $1/B$ or $1/B^2$-periodic, and their period is controlled by the radiation electric field. We further show that using a displacement model in the limit of short-range (``sharp'') disorder we can extract the radiation field and the width of the cyclotron resonance.

cond-mat.mes-hall↗

arXiv2018

Phase Diagram of Quantum Hall Breakdown and Non-linear Phenomena for InGaAs/InP Quantum Wells

We investigate non-linear magneto-transport in a Hall bar device made from a strained InGaAs/InP quantum well: a material system with attractive spintronic properties. From extensive maps of the longitudinal differential resistance (r_xx) as a function of current and magnetic (B-) field phase diagrams are generated for quantum Hall breakdown in the strong quantum Hall regime reaching filling factor $ν$=1. By careful illumination the electron sheet density (n) is incremented in small steps and this provides insight into how the transport characteristics evolve with n. We explore in depth the energetics of integer quantum Hall breakdown and provide a simple picture for the principal features in the r_xx maps. A simple tunneling model that captures a number of the characteristic features is introduced. Parameters such as critical Hall electric fields and the exchange-enhanced g-factors for odd-filling factors including nu=1 are extracted. A detailed examination is made of the B-field dependence of the critical current as determined by two different methods and compiled for different values of n. A simple rescaling procedure that allows the critical current data points obtained from r_xx maxima for even-filling to collapse on to a single curve is demonstrated. Exchange-enhanced g-factors for odd-filling are extracted from the compiled data and are compared to those determined by conventional thermal activation measurements. The exchange-enhanced g-factor is found to increase with decreasing n.

cond-mat.dis-nn↗

arXiv2018

Large magnetoresistance by Pauli blockade in hydrogenated graphene

We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute the observed positive, in-plane, magnetoresistance to Pauli-blockade of hopping conduction induced by spin polarization. Our work shows that spin polarization in concert with electron-electron interaction can play a dominant role in magnetotransport within an atomic monolayer.

cond-mat.mes-hall↗

arXiv2009

Time Resolved Control of Electron Tunnelling Times and Single-shot Spin Readout in a Quantum Dot

We are pursuing a capability to perform time resolved manipulations of single spins in quantum dot circuits involving more than two quantum dots. In this paper, we demonstrate full counting statistics as well as averaging techniques we use to calibrate the tunnel barriers. We make use of this to implement the Delft protocol for single shot single spin readout in a device designed to form a triple quantum dot potential. We are able to tune the tunnelling times over around three orders of magnitude. We obtain a spin relaxation time of 300 microseconds at 10T.

cond-mat.mes-hall↗

arXiv2009

Silencing noisy 2DEG wafers

Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant telegraph noise problems can be made to produce 'quiet' devices if a thin insulator layer is placed between the gates and the GaAs/AlGaAs heterostructure. A slow drift in the resulting devices is attributed to the trapping of charges within the specific insulator used. This charge can be manipulated, leading to strategies for stabilizing the device.

cond-mat.mes-hall↗

arXiv2006

Coherent Transport Through a Quadruple Point in a Few Electron Triple Dot

A few electron double electrostatic lateral quantum dot can be transformed into a few electron triple quantum dot by applying a different combination of gate voltages. Quadruple points have been achieved at which all three dots are simultaneously on resonance. At these special points in the stability diagram four occupation configurations are possible. Both charge detection and transport experiments have been performed on this device. In this short paper we present data and confirm that transport is coherent by observing a Pi phase shift in magneto-conductance oscillations as one passes through the quadruple point.

cond-mat.mes-hall↗