arXiv subjects

S. V. Novikov

Publications and source records attributed to S. V. Novikov.

29 records · Page 2Linked to original sources

arXiv2013

Charge carrier transport in molecularly doped polycarbonate as a test case for the dipolar glass model

We present the results of Monte-Carlo simulations of the charge carrier transport in a disordered molecular system containing spatial and energetic disorders using the dipolar glass model. Model parameters of the material were chosen to fit a typical polar organic photoconductor polycarbonate doped with 30% of aromatic hydrazone, whose transport properties are well documented in literature. Simulated carrier mobility demonstrates a usual Poole-Frenkel field dependence and its slope is very close to the experimental value without using any adjustable parameter. At room temperature transients are universal with respect to the electric field and transport layer thickness. At the same time, carrier mobility does not depend on the layer thickness and transients develop a well-defined plateau where the current does not depend on time, thus demonstrating a non-dispersive transport regime. Tails of the transients decay as power law with the exponent close to -2. This particular feature indicates that transients are close to the boundary between dispersive and non-dispersive transport regimes. Shapes of the simulated transients are in very good agreement with the experimental ones. In summary, we provide a first verification of a self-consistency of the dipolar glass transport model, where major transport parameters, extracted from the experimental transport data, are then used in the transport simulation, and the resulting mobility field dependence and transients are in very good agreement with the initial experimental data.

cond-mat.mtrl-sci↗

arXiv2013

Hopping charge transport in organic materials

General properties of the transport of charge carriers (electrons and holes) in disordered organic materials are discussed. It was demonstrated that the dominant part of the total energetic disorder in organic material is usually provided by the electrostatic disorder, generated by randomly located and oriented dipoles and quadrupoles. For this reason this disorder is strongly spatially correlated. Spatial correlation directly governs the field dependence of the carrier drift mobility. Shape of the current transients, which is of primary importance for a correct determination of the carrier mobility, is considered. A notable feature of the electrostatic disorder is its modification in the vicinity of the electrode, and this modification takes place without modification of the structure of the material. It is shown how this phenomenon affects characteristics of the charge injection. We consider also effect of inter-charge interaction on charge transport.

cond-mat.mtrl-sci↗

arXiv2008

Distribution of averages in a correlated Gaussian medium as a tool for the estimation of the cluster distribution on size

Calculation of the distribution of the average value of a Gaussian random field in a finite domain is carried out for different cases. The results of the calculation demonstrate a strong dependence of the width of the distribution on the spatial correlations of the field. Comparison with the simulation results for the distribution of the size of the cluster indicates that the distribution of an average field could serve as a useful tool for the estimation of the asymptotic behavior of the distribution of the size of the clusters for "deep" clusters where value of the field on each site is much greater than the rms disorder.

cond-mat.dis-nn↗

arXiv2008

Hopping charge transport in disordered organic materials: where is the disorder?

Effect of energetic disorder on charge carrier transport in organic materials has been reexamined. A reliable method for mobility calculation and subsequent evaluation of relevant disorder parameters has been discussed. This method is well suited for a direct calculation of the magnitude of dipolar disorder $σ_\textrm{dip}$ in polar organic materials from the current transients. Calculation of $σ_\textrm{dip}$ for several transport materials with varying concentration of polar dopants gives concentration dependences that are in reasonable agreement with theoretical predictions. A possible solution of the puzzle concerning the disorder effect on the mobility temperature dependence has been suggested.

cond-mat.dis-nn↗

arXiv2008

Calculation of the dynamical critical exponent in the model A of critical dynamics to order ε^4

A new method based on the R'-operation of the renormalization theory is proposed for the numerical calculation of the renormalization constants in the theory of critical behaviour. The problem of finding residues of the poles of the Green's functions at ε= 0, where ε= 4 - d, is reduced to the evaluation of multiple UV-finite integrals, which can be performed by means of standard integration programs. The method is used to calculate the renormalization group functions of the model A of critical dynamics in four-loop approximation. Dynamical exponent z of the model A is calculated in the fourth order of the ε-expansion.

cond-mat.stat-mech↗

arXiv2006

Anomalous scaling in two and three dimensions for a passive vector field advected by a turbulent flow

A model of the passive vector field advected by the uncorrelated in time Gaussian velocity with power-like covariance is studied by means of the renormalization group and the operator product expansion. The structure functions of the admixture demonstrate essential power-like dependence on the external scale in the inertial range (the case of an anomalous scaling). The method of finding of independent tensor invariants in the cases of two and three dimensions is proposed to eliminate linear dependencies between the operators entering into the operator product expansions of the structure functions. The constructed operator bases, which include the powers of the dissipation operator and the enstrophy operator, provide the possibility to calculate the exponents of the anomalous scaling.

nlin.CD↗

arXiv2005

Roughness-induced energetic disorder at the metal/organic interface

The amplitude of the roughness-induced energetic disorder at the metal/organic interface is calculated. It was found that for moderately rough electrodes, the correction to the electrostatic image potential at the charge location is small. For this reason, roughness-induced energetic disorder cannot noticeably affect charge carrier injection, contrary to the recent reports.

cond-mat.mtrl-sci↗

arXiv2005

Energetic disorder at the metal/organic semiconductor interface

The physics of organic semiconductors is dominated by the effects of energetic disorder. We show that image forces reduce the electrostatic component of the total energetic disorder near an interface with a metal electrode. Typically, the variance of energetic disorder is dramatically reduced at the first few layers of organic semiconductor molecules adjacent to the metal electrode. Implications for charge injection into organic semiconductors are discussed.

cond-mat.mtrl-sci↗

arXiv2004

Search For Hole Mediated Ferromagnetism In Cubic (Ga,Mn)N

Results of magnetisation measurements on p-type zincblende-(Ga,Mn)N are reported. In addition to a small high temperature ferromagnetic signal, we detect ferromagnetic correlation among the remaining Mn ions, which we assign to the onset of hole-mediated ferromagnetism in (Ga,Mn)N.

cond-mat.mtrl-sci↗

arXiv2003

P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy

Cubic (zinc-blende) Ga1-xMnxN layers were grown by plasma-assisted molecular beam epitaxy on GaAs (001) substrates. Some of the structures also contained cubic AlN buffer layers. Auger Electron Spectroscopy and Secondary Ion Mass Spectroscopy studies clearly confirmed the incorporation of Mn into cubic GaN, the Mn being uniformly distributed through the layer. X-ray diffraction studies demonstrated that the Mn-doped GaN films are cubic and do not show phase separation up to a Mn concentrations of x<0.1. P-type conductivity for the cubic Ga1-xMnxN layers was observed for a wide range of the Mn doping levels. The measured hole concentration at room temperature depends non-linearly on the Mn incorporation and varies from 3x10^16 to 5x10^18 cm-3.

cond-mat.mtrl-sci↗

arXiv2000

Anomalous scaling of a passive scalar in the presence of strong anisotropy

Field theoretic renormalization group and the operator product expansion are applied to a model of a passive scalar field, advected by the Gaussian strongly anisotropic velocity field. Inertial-range anomalous scaling behavior is established, and explicit asymptotic expressions for the n-th order structure functions of scalar field are obtained; they are represented by superpositions of power laws with nonuniversal (dependent on the anisotropy parameters) anomalous exponents. In the limit of vanishing anisotropy, the exponents are associated with tensor composite operators built of the scalar gradients, and exhibit a kind of hierarchy related to the degree of anisotropy: the less is the rank, the less is the dimension and, consequently, the more important is the contribution to the inertial-range behavior. The leading terms of the even (odd) structure functions are given by the scalar (vector) operators. For the finite anisotropy, the exponents cannot be associated with individual operators (which are essentially ``mixed'' in renormalization), but the aforementioned hierarchy survives for all the cases studied. The second-order structure function is studied in more detail using the renormalization group and zero-mode techniques.

nlin.CD↗