arXiv subjects

S. V. Zaitsev-Zotov

Publications and source records attributed to S. V. Zaitsev-Zotov.

At least 37 records · Page 2Linked to original sources

arXiv2014

Effect of surface defects and few-atomic steps on the local density of states of the atomically-clean surface of topological insulator Bi$_2$Se$_3$

The results of ultra-high vacuum low-temperature scanning-tunneling microscopy (STM) and spectroscopy (STS) of atomically clean (111) surface of the topological insulator Bi$_2$Se$_3$ are presented. We observed several types of new subsurface defects whose location and charge correspond to p-type conduction of grown crystals. The sign of the thermoelectric effect also indicates p-type conduction. STM and STS measurements demonstrate that the chemical potential is always located inside the bulk band gap. We also observed changes in the local density of states in the vicinity of the quintuple layer steps at the studied surface. This changes correspond either to the shift of the Dirac cone position or to the shift of the chemical potential near the step edge.

cond-mat.mes-hall↗

arXiv2014

Indium doping-induced change in the photoconduction spectra of o-TaS3

Impurities and defects are known to affect the properties of the charge density wave (CDW) state but the influence of impurities on the density of states inside the Peierls gap remains largely unexplored. Here we present an experimental study of the effect of indium impurities on photoconduction spectra of CDW compound orthorhombic TaS$_3$. We use the temperature diffusion method to introduce indium into a sample from preliminary attached In contacts. The concentration of In after 23 hours of diffusion is found to be nonuniform and strongly dependent on the distance to the contacts. The diffusion affects the spectral range 0.15-0.25 eV, increasing the photoconduction amplitude linearly with diffusion time. The optical gap value obtained from the measurements is $2Δ= 0.25$ eV and the tail of states below $2Δ$ is associated with the impurities in agreement with the Tüttö-Zawadowski theory. Diffusion-induced modification of current-voltage characteristics and decrease of the Peierls temperature are also observed. Neither changes in photoconduction spectra nor in the Peierls transition temperature of the control sample with Au contacts are found.

cond-mat.str-el↗

arXiv2014

Charge-density waves physics revealed by photoconduction

The results of photoconduction study of the Peierls conductors are reviewed. The studied materials are quasi-one-dimensional conductors with the charge-density wave: K$_{0.3}$MoO$_3$, both monoclinic and orthorhombic TaS$_3$ and also a semiconducting phase of NbS$_3$ (phase I). Experimental methods, relaxation times, effects of illumination on linear and nonlinear charge transport, the electric-field effect on photoconduction and results of the spectral studies are described. We demonstrate, in particular, that a simple model of modulated energy gap slightly smoothed by fluctuations fits the available spectral data fairly well. The level of the fluctuations is surprisingly small and does not exceed a few percent of the optical energy gap value.

cond-mat.mes-hall↗

arXiv2014

Photoconduction in the Peierls conductor monoclinic TaS$_3$

Photoconduction in the monoclinic phase of quasi-one-dimensional conductor TaS$_3$ has been observed at $T < 70$~K. It was studied jointly with low-temperature ohmic and non-linear dark conduction. The strong sample quality dependence of both photoconduction and dark conduction at this temperature region has been observed. Together with a similarity of the main features of the photoconduction characteristic of both monoclinic ({\it m-}TaS$_3$) and orthorhombic ({\it o-}TaS$_3$) samples the following new peculiarities of photoconduction in {\it m-}TaS$_3$ were found: 1) the dependence of the activation energy of photoconduction on temperature, $T$, 2) the change of the recombination mechanism from the linear type to the collisional one at low $T$ with a sample quality growth, 3) the existence of a fine structure of the electric-field dependence of photoconduction. Spectral study gives the Peierls energy gap value $2Δ^*= 0.18$~eV.

cond-mat.str-el↗

arXiv2012

Energy gap revealed by low-temperature scanning-tunnelling spectroscopy of Si(111)-7x7 surface in illuminated slightly-doped crystals

Physical properties of Si(111)-7x7 surface of low-doped n- and p-type Si samples is studied in the liquid helium temperature region by the scanning-tunnelling microscopy and spectroscopy. Conduction required for the study is provided by illumination of the surface. Application of illumination removes completely the band bending near the surface and restores initial population of the surface states. Our results indicate the existence of the energy gap 2Δ = 40 \pm 10 meV in intrinsically-populated Si(111)-7x7 surface.

cond-mat.mes-hall↗

arXiv2011

Photoconduction in CDW conductors

Photoconduction study of quasi-1D conductors allows to distinguish between the single-particle and collective {\it linear} conduction, investigate the effect of screening on collective transport and obtain interesting new details of the electronic energy structure of pure and doped CDW conductors. Here we present results of photoconduction study in quasi-1D conductors o-TaS$_3$, K$_{0.3}$MoO$_3$, and NbS$_3$(I).

cond-mat.mtrl-sci↗

arXiv2011

New phenomena in CDW systems at small scales

The electrophysical properties of quasi-one-dimensional conductors with a charge-density wave change qualitatively upon a decrease in their transverse sizes. A brief review of various finite-size effects and the present-day knowledge of their origin is presented.

cond-mat.mes-hall↗

arXiv2011

Electronic states inside the gap of quasi-one-dimensional conductor NbS_3(I)

The photoconductivity spectra of NbS_3 (phase I) crystals are studied. A drop of photoconductivity corresponding to the Peierls gap edge is observed. Reproducible spectral features are found at energies smaller the energy gap value. The first one is a peak at the energy 0.6 eV that is close to the midgap one. It has a threshold-like dependence of the amplitude on the electrical field applied. Another feature is a peak at the energy 0.9 eV near to the edge of the gap. We ascribe the origin of this peak to the stacking faults. The third one are continuous states between these peaks at energies 0.6-0.8 eV. We observed bleaching of the photoconductivity even below zero at this energies in the high electric field (700 V/cm) and under additional illumination applied.

cond-mat.str-el↗

arXiv2009

Electric-field-dependent energy structure of quasi-one-dimensional conductor o-TaS_3

Energy structure of the Peierls gap in orthorhombic TaS$_3$ is examined by spectral study of photoconduction. The gap edge and energy levels inside the Peierls gap are observed. The amplitude of the energy levels is found to depend on both the temperature and the electric field. The electric field of the order of 10 V/cm affects the energy levels and leads to the redistribution of intensity between peaks. The small value of the electric field indicates participation of the collective state in formation of the energy levels inside the Peierls gap.

cond-mat.str-el↗

arXiv2006

Evidence for collective linear conduction in the Peierls conductor o-TaS_3

Using photoconduction study we demonstrate that the low-temperature Ohmic conduction of TaS$_3$ is not provided by single-particle excitations -- electrons and holes excited over the Peierls gap. Instead, the low-temperature Ohmic conduction is mostly provided by collective excitations having the activation energy about half of the Peierls gap value and shunting the contribution of electrons and holes.

cond-mat.mtrl-sci↗

arXiv2004

Photoconduction and photocontrolled collective effects in the Peierls conductor TaS$_3$

Light illumination of thin crystals of CDW conductor TaS$_3$ is found to result in dramatic changes of both linear ($G$) and nonlinear conduction. The increase of $G$ is accompanied by suppression of the collective conduction, growth of the threshold field $E_T$, and appearance of the switching and hysteretic behavior in the nonlinear conduction. The effects in the nonlinear conduction are associated with increase of CDW elasticity due to illumination that leads in particular to appearance of a relation $E_T\propto G^{1/3}$ expected for the one-dimensional pinning.

cond-mat.str-el↗

arXiv2004

One-dimensional conduction in Charge-Density Wave nanowires

We report a systematic study of the transport properties of coupled one-dimensional metallic chains as a function of the number of parallel chains. When the number of parallel chains is less than 2000, the transport properties show power-law behavior on temperature and voltage, characteristic for one-dimensional systems.

cond-mat.str-el↗

arXiv2004

Peierls transition as spatially inhomogeneous gap suppression

We propose a model of the Peierls transition (PT) taking into account amplitude fluctuations of the charge-density waves and spontaneous thermally activated suppression of the Peierls gap, akin to the phase slip process. The activation results in the exponential growth of the normal phase with increasing temperature. The model fairly describes the behavior of resistance, thermal expansion, Young modulus and specific heat both below and above the PT temperature $T_P$. The PT appears to have a unique nature: it does not comprise $T_P$ as a parameter, and at the same time it has features of the 1st order transition. The possible basis for the model is activation of non-interacting amplitude solitons perturbing large volumes around them.

cond-mat.str-el↗

arXiv2002

Unconventional magnetoresistance in long InSb nanowires

Magnetoresistance in long correlated nanowires of degenerate semiconductor InSb in asbestos matrix (wire diameter of around 5 nm, length 0.1 - 1 mm) is studied over temperature range 2.3 - 300 K. At zero magnetic field the electric conduction $G$ and the current-voltage characteristics of such wires obey the power laws $G\propto T^α$, $I\propto V^β$, expected for one-dimensional electron systems. The effect of magnetic field corresponds to a 20% growth of the exponents $α$, $β$ at H=10 T. The observed magnetoresistance is caused by the magnetic-field-induced breaking of the spin-charge separation and represents a novel mechanism of magnetoresistance.

cond-mat.str-el↗

arXiv2001

Luttinger-liquid-like behavior in bulk crystals of the quasi-one-dimensional conductor NbSe$_3$

CDW/Normal metal/CDW junctions and nanoconstrictions in crystals of the quasi-one-dimensional conductor NbSe$_3$ are manufactured using a focused-ion-beam. It is found that the low-temperature conduction of these structures changes dramatically and loses the features of the charge-density-wave transition. Instead, a dielectric phase is developed. Up to 6-order power-law variations of the conduction as a function of both temperature and electric field can be observed for this new phase. The transition from quasi-one-dimensional behavior to one-dimensional behavior is associated with destruction of the three-dimensional order of the charge-density waves by fluctuations. It results in a recovery of the Luttinger-liquid properties of metallic chains, like it takes place in sliding Luttinger liquid phase.

cond-mat.str-el↗

arXiv2001

Negative Resistance and Local Charge-Density-Wave Dynamics

Charge-density-wave dynamics is studied on a submicron length scale in NbSe_3 and o-TaS_3. Regions of negative absolute resistance are observed in the CDW sliding regime at sufficiently low temperatures. The origin of the negative resistance is attributed to the different forces that the deformed CDW and quasi-particles feel: the force on the CDW is merely caused by a difference of the electric potentials, while the quasi-particle current is governed by a difference of the electrochemical potentials.

cond-mat.str-el↗

arXiv2000

Contributions of spontaneous phase slippage to linear and non-linear conduction near the Peierls transition in thin samples of o-TaS_3

In the Peierls state very thin samples of TaS_3 (cross-section area \sim 10^{-3} mkm^2) are found to demonstrate smearing of the I-V curves near the threshold field. With approaching the Peierls transition temperature, T_P, the smearing evolves into smooth growth of conductance from zero voltage interpreted by us as the contribution of fluctuations to the non--linear conductance. We identify independently the fluctuation contribution to the linear conductance near T_P. Both linear and non-linear contributions depend on temperature with close activation energies \sim (2 - 4) x 10^3 K and apparently reveal the same process. We reject creep of the {\it continuous} charge-density waves (CDWs) as the origin of this effect and show that it is spontaneous phase slippage that results in creep of the CDW. A model is proposed accounting for both the linear and non-linear parts of the fluctuation conduction up to T_P.

cond-mat.mtrl-sci↗

arXiv2000

Convective Term and Transversely Driven Charge-Density Waves

We derive the convective terms in the damping which determine the structure of the moving charge-density wave (CDW), and study the effect of a current flowing transverse to conducting chains on the CDW dynamics along the chains. In contrast to a recent prediction we find that the effect is orders of magnitude smaller, and that contributions from transverse currents of electron- and hole-like quasiparticles to the force exerted on the CDW along the chains act in the opposite directions. We discuss recent experimental verification of the effect and demonstrate experimentally that geometry effects might mimic the transverse current effect.

cond-mat.str-el↗