arXiv subjects

Sajid Husain

Publications and source records attributed to Sajid Husain.

26 records · Page 2Linked to original sources

arXiv2020

Damping-like Torque in Monolayer 1T-TaS$_2$

A damping-like spin orbit torque (SOT) is a prerequisite for ultralow power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition metal dichalcogenide (TMD) TaS$_2$ interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25$\pm$0.03 and the spin Hall conductivity (2.63 $\times$ 10$^5$ $\frac{\hbar}{2e}$ $Ω^{-1}$ m$^{-1}$) is found to be superior to values reported for other TMDs. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS$_2$/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. The dominance of damping-like torque demonstrated in our study provides a promising path for designing next generation conducting TMD based low-powered quantum memory devices.

cond-mat.mes-hall↗

arXiv2019

Impact of the crystal orientation on spin-orbit torques in Fe/Pd bilayers

Spin-orbit torques in ferromagnetic (FM)/non-magnetic (NM) heterostructures offer more energy-efficient means to realize spin-logic devices; however, their strengths are determined by the heterostructure interface. This work examines crystal orientation impact on the spin-orbit torque efficiency in different Fe/Pd bilayer systems. Spin torque ferromagnetic measurements evidence that the damping-like torque efficiency is higher in epitaxial than in polycrystalline bilayer structures while the field-like torque is negligible in all bilayer structures. The strength of the damping-like torque decreases with deterioration of the bilayer epitaxial quality. The present finding provides fresh insight for the enhancement of spin-orbit torques in magnetic heterostructures.

cond-mat.mtrl-sci↗

arXiv2019

Extraordinary efficient spin-orbit torque switching in (W, Ta)/epitaxial-Co60Fe40/TiN heterostructures

The giant spin Hall effect in magnetic heterostructures along with low spin memory loss and high interfacial spin mixing conductance are prerequisites to realize energy efficient spin torque based logic devices. We report giant spin Hall angle (SHA) of 28.67 (5.09) for W (Ta) interfaced epi- Co60Fe40/TiN structures. The spin-orbit torque switching current density (J_Crit) is as low as 1.82 (8.21) MA/cm2 in W (Ta)/Co60Fe40(t_CoFe)/TiN structures whose origin lies in the epitaxial interfaces. These structures also exhibit very low spin memory loss and high spin mixing conductance. These extraordinary values of SHA and therefore ultra-low J_Crit in semiconducting industry compatible epitaxial materials combinations open up a new direction for the realization of energy efficient spin logic devices by utilizing epitaxial interfaces.

cond-mat.mtrl-sci↗

arXiv2019

Spin pumping and spin torque in interfacial tailored Co2FeAl/\b{eta}-Ta layers

The Heusler ferromagnetic (FM) compound Co2FeAl interfaced with a high-spin orbit coupling non-magnetic (NM) layer is a promising candidate for energy efficient spin logic circuits. The circuit potential depends on the strength of angular momentum transfer across the FM/NM interface; hence, requiring low spin memory loss and high spin-mixing conductance. To highlight this issue, spin pumping and spin-transfer torque ferromagnetic resonance measurements have been performed on Co_2FeAl/β-Ta heterostructures tailored with Cu interfacial layers. The interface tailored structure yields an enhancement of the effective spin-mixing conductance. The interface transparency and spin memory loss corrected values of the spin-mixing conductance, spin Hall angle and spin diffusion length are found to be 3.40 \pm 0.01 \times 10^{19} m^{-2}, 0.029 \pm 0.003, and 2.3 \pm 0.5 nm, respectively. Furthermore, a high current modulation of the effective damping of around 2.1 % has been achieved at an applied current density of 1 \times 10^9 A/m^2 , which clearly indicates the potential of using this heterostructure for energy efficient control in spin devices

cond-mat.mtrl-sci↗

arXiv2018

Effect of in-situ electric field assisted growth on anti-phase boundaries in epitaxial Fe3O4 thin films on MgO

Anti-phase boundaries (APBs) normally form as a consequence of the initial growth conditions in all spinel ferrite thin films. The presence of APBs in epitaxial films of the inverse spinel Fe3O4 alters their electronic and magnetic properties due to strong antiferromagnetic (AF) interactions across these boundaries. The effect of using in-situ electric field assisted growth on the migration of APBs in hetero epitaxial Fe3O4(100)/MgO(100) thin films have been explored in the present work. The electric field assisted growth is found to reduce the AF interactions across APBs and as a consequence APBs free thin film like properties are obtained, which have been probed by electronic, magnetic and structural characterization. An increase in energy associated with the nucleation and/or early stage of the growth and, therefore, a corresponding increase in surface mobility of the ad-atoms play a critical role in controlling the density of APBs. This innovative technique can be employed to grow epitaxial spinel thin films with controlled AF interactions across APBs.

cond-mat.mtrl-sci↗

arXiv2017

Spin Pumping in Ion-beam Sputtered Co_{2}FeAl/Mo Bilayers:Interfacial Gilbert Damping

The spin pumping mechanism and associated interfacial Gilbert damping are demonstrated in ion-beam sputtered Co2FeAl (CFA) /Mo bilayer thin films employing ferromagnetic resonance spectroscopy. The dependence of the net spin current transportation on Mo layer thickness, 0 to 10 nm, and the enhancement of the net effective Gilbert damping are reported. The experimental data has been analyzed using spin pumping theory in terms of spin current pumped through the ferromagnet /nonmagnetic metal interface to deduce the effective spin mixing conductance and the spin-diffusion length, which are estimated to be 1.16(0.19)x10^19 m^-2 and 3.50(0.35)nm, respectively. The damping constant is found to be 8.4(0.3)x10^-3 in the Mo(3.5nm) capped CFA(8nm) sample corresponding to a ~42% enhancement of the original Gilbert damping (6.0(0.3)x10^-3) in the uncapped CFA layer. This is further confirmed by inserting a Cu dusting layer which reduces the spin transport across the CFA /Mo interface. The Mo layer thickness dependent net spin current density is found to lie in the range of 1-3 MAm^-2, which also provides additional quantitative evidence of spin pumping in this bilayer thin film system.

cond-mat.mes-hall↗

arXiv2017

Temperature-dependent Gilbert damping of Co2FeAl thin films with different degree of atomic order

Half-metallicity and low magnetic damping are perpetually sought for in spintronics materials and full Heusler alloys in this respect provide outstanding properties. However, it is challenging to obtain the well-ordered half-metallic phase in as-deposited full Heusler alloys thin films and theory has struggled to establish a fundamentals understanding of the temperature dependent Gilbert damping in these systems. Here we present a study of the temperature dependent Gilbert damping of differently ordered as-deposited Co2FeAl full Heusler alloy thin films. The sum of inter- and intraband electron scattering in conjunction with the finite electron lifetime in Bloch states govern the Gilbert damping for the well-ordered phase in contrast to the damping of partially-ordered and disordered phases which is governed by interband electronic scattering alone. These results, especially the ultralow room temperature intrinsic damping observed for the well-ordered phase provide new fundamental insights to the physical origin of the Gilbert damping in full Heusler alloy thin films.

cond-mat.mtrl-sci↗

arXiv2017

Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Films

Magnetic skyrmions are topological spin structures having immense potential for energy efficient spintronic devices. However, observations of skyrmions at room temperature are limited to patterned nanostructures. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature and in zero external magnetic field employing magnetic force microscopy. The skyrmions are observed in a trilayer structure comprised of heavy metal (HM)/ferromagnet (FM)/Oxide interfaces which result in strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations. We also emphasize on room temperature observation of multiple skyrmions which can be stabilized for suitable choices of CFA layer thickness, perpendicular magnetic anisotropy, and i-DMI. These results open up a new paradigm for designing room temperature spintronic devices based on skyrmions in FM continuous thin films.

cond-mat.mtrl-sci↗