arXiv subjects

Savio Fabretti

Publications and source records attributed to Savio Fabretti.

10 recordsLinked to original sources

arXiv2026

Efficient terahertz optical filtering with large-area all-metal and polymer-metal woven wire meshes

Many components for terahertz (THz) optical filtering are mechanically fragile and are hard to produce with large aperture, making them unsuitable for applications where larger THz beam diameter is required. In this work, the THz optical properties of industrial-grade, readily available and inexpensive woven wire meshes are studied using THz time-domain spectroscopy and numerical simulations. These meshes are meter-sized, free-standing sheet materials that are principally attractive for the use as robust, large-area THz components. Our results show that such meshes can act as efficient, tunable THz bandpass filters due to sharp plasmonic resonance supported by the interwoven metallic wires. Further, the meshes that combine metallic and polymer wires act as efficient THz linear polarizers with a polarization extinction ratio (field) above 60:1 for frequencies below 3 THz.

physics.optics↗

arXiv2026

Time-dependent terahertz dielectric function of ZnTe under two-photon optical excitation at 800 nm wavelength

ZnTe is arguably the most widely used nonlinear crystal for the generation and detection of THz radiation, used in conjunction with sub-bandgap optical excitation by femtosecond lasers operating near 800 nm. The THz dielectric function of ZnTe is the key parameter defining the efficiency and bandwidth of THz generation and detection. Here, we demonstrate that the THz dielectric function of ZnTe undergoes substantial transient modification at 800 nm sub-bandgap excitation under conditions typical for THz generation. These modifications arise from significant free-carrier generation via two-photon absorption of the 800 nm pump, accompanied by the pump-driven activation of the THz-active phonon modes. Using optical pump-THz probe spectroscopy, we characterized the THz dielectric function of ZnTe under 800 nm excitation as a function of pump fluence and pump-probe delay. Analysis of the experimental data within the Drude-Lorentz model provided the generated free carrier density and momentum scattering time, and oscillator strength of the pump activated THz phonon modes, revealing their transient evolution in dependence on the excitation conditions.

cond-mat.other↗

arXiv2025

Terahertz field effect in a two-dimensional semiconductor MoS2

Layered two-dimensional (2D) materials, with their atomic-scale thickness and tunable electronic, optical, and mechanical properties, open many promising pathways to significantly advance modern electronics. The field effect caused by a strong electric field, typically of MV/cm level, applied perpendicular to the material layers, is a highly effective method for controlling these properties. Field effect allows the regulation of the electron flow in transistor channels, improves the photodetector efficiency and spectral range, and facilitates the exploration of novel exotic quantum phenomena in 2D materials. However, existing approaches to induce the field effect in 2D materials utilize circuit-based electrical gating methods fundamentally limited to microwave response rates. Device-compatible ultrafast, sub-picosecond control needed for modern technology and basic science applications still remains a challenge. In this study, we demonstrate such an ultrafast field effect in atomically thin MoS2, an archetypal 2D semiconductor, embedded in a hybrid 3D-2D terahertz nanoantenna structure. This nanoantenna efficiently converts an incident terahertz electric field into the vertical ultrafast gating field in MoS2 while simultaneously enhancing it to the required MV/cm level. We observe the terahertz field effect optically as coherent terahertz-induced Stark shift of characteristic exciton resonances in MoS2. Our results enable novel developments in technology and the fundamental science of 2D materials, where the terahertz field effect is crucial.

cond-mat.mtrl-sci↗

arXiv2022

Disentangling complex current pathways in a metallic Ru/Co bilayer nanostructure using THz spectroscopy

Many modern spintronic technologies, such as spin valves, spin Hall applications, and spintronic THz emitters, are based on electrons crossing buried internal interfaces within metallic nanostructures. However, the complex current pathways within such nanostructures are difficult to disentangle using conventional experimental methods. Here, we measure the conductivity of a technologically relevant Ru/Co bilayer nanostructure in a contact-free fashion using THz time-domain spectroscopy. By applying an effective resistor network to the data, we resolve the complex current pathways within the nanostructure and determine the degree of electronic transparency of the internal interface between the Ru and Co nanolayers.

cond-mat.mes-hall↗

arXiv2019

Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt

The spin Hall magnetoresistance (SMR) effect arises from spin-transfer processes across the interface between a spin Hall active metal and an insulating magnet. While the SMR response of ferrimagnetic and antiferromagnetic insulators has been studied extensively, the SMR of a paramagnetic spin ensemble is not well established. Thus, we investigate herein the magnetoresistive response of as-deposited yttrium iron garnet/platinum thin film bilayers as a function of the orientation and the amplitude of an externally applied magnetic field. Structural and magnetic characterization show no evidence for crystalline order or spontaneous magnetization in the yttrium iron garnet layer. Nevertheless, we observe a clear magnetoresistance response with a dependence on the magnetic field orientation characteristic for the SMR. We propose two models for the origin of the SMR response in paramagnetic insulator/Pt heterostructures. The first model describes the SMR of an ensemble of non-interacting paramagnetic moments, while the second model describes the magnetoresistance arising by considering the total net moment. Interestingly, our experimental data are consistently described by the net moment picture, in contrast to the situation in compensated ferrimagnets or antiferromagnets.

cond-mat.mes-hall↗

arXiv2018

Large anomalous Nernst effect in thin films of the Weyl semimetal Co2MnGa

The magneto-thermoelectric properties of Heusler compound thin films are very diverse. Here, we discuss the anomalous Nernst response of Co$_2$MnGa thin films. We systematically study the anomalous Nernst coefficient as a function of temperature, and we show that unlike the anomalous Hall effect, the anomalous Nernst effect in Co$_2$MnGa strongly varies with temperature. We exploit the on-chip thermometry technique to quantify the thermal gradient, which enables us to directly evaluate the anomalous Nernst coefficient. We compare these results to a reference CoFeB thin film. We show that the 50-nm-thick Co$_2$MnGa films exhibit a large anomalous Nernst effect of -2$μ$V/K at 300 K, whereas the 10-nm-thick Co$_2$MnGa film exhibits a significantly smaller anomalous Nernst coefficient despite having similar volume magnetizations. These findings suggest that the microscopic origin of the anomalous Nernst effect in Co$_2$MnGa is complex and may contain contributions from skew-scattering, side-jump or intrinsic Berry phase. In any case, the large anomalous Nernst coefficent of Co$_2$MnGa thin films at room temperature makes this material system a very promising candidate for efficient spin-caloritronic devices.

cond-mat.mes-hall↗

arXiv2017

Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature

We study the evolution of magnetoresistance with temperature in thin film bilayers consisting of platinum and the antiferromagnet Cr$_2$O$_3$ with its easy axis out of the plane. We vary the temperature from 20 - 60°C, close to the Néel temperature of Cr$_2$O$_3$ of approximately 37°C. The magnetoresistive response is recorded during rotations of the external magnetic field in three mutually orthogonal planes. A large magnetoresistance having a symmetry consistent with a positive spin Hall magnetoresistance is observed in the paramagnetic phase of the Cr$_2$O$_3$, which however vanishes when cooling to below the Néel temperature. Comparing to analogous experiments in a Gd$_3$Ga$_5$O$_{12}$/Pt heterostructure, we conclude that a paramagnetic field induced magnetization in the insulator is not sufficient to explain the observed magnetoresistance. We speculate that the type of magnetic moments at the interface qualitatively impacts the spin angular momentum transfer, with the $3d$ moments of Cr sinking angular momentum much more efficiently as compared to the more localized $4f$ moments of Gd.

cond-mat.mes-hall↗

arXiv2015

Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe3O4 as the reason for the change of the TMR. Additionally, different treatments of the magnetite interface (argon bombardment, annealing at 200°C in oxygen atmosphere) during the preparation of the MTJs have been studied regarding their effect on the performance of the MTJs. A maximum TMR of up to -12% could be observed using both argon bombardment and annealing in oxygen atmosphere, despite exposing the magnetite surface to atmospheric conditions before the deposition of the MgO barrier.

cond-mat.mtrl-sci↗

arXiv2014

Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields

We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T=0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.

cond-mat.mtrl-sci↗

arXiv2010

Fabrication of superconducting MgB2 thin films by magnetron co-sputtering on (001) MgO substrates

We fabricated superconducting MgB2 thin films on (001) MgO substrates. The samples were prepared by magnetron rf and dc co-sputtering on heated substrates. They were annealed ex-situ for one hour at temperatures between 450°C and 750°C. We will show that the substrate temperature during the sputtering process and the post annealing temperatures play a crucial role in forming MgB2 superconducting thin films. We achieved a critical onset temperature of 27.1K for a film thickness of 30nm. The crystal structures were measured by x-ray diffraction.

cond-mat.supr-con↗