arXiv subjects

Sayeef Salahuddin

Publications and source records attributed to Sayeef Salahuddin.

At least 55 records · Page 3Linked to original sources

arXiv2017

Electric Current Induced Ultrafast Demagnetization

We report the magnetic response of Co/Pt multilayers to picosecond electrical heating. Using photoconductive Auston switches, we generate electrical pulses with 5.5 picosecond duration and hundreds of pico-Joules to pass through Co/Pt multilayers. The electrical pulse heats the electrons in the Co/Pt multilayers and causes an ultrafast reduction in the magnetic moment. A comparison between optical and electrically induced demagnetization of the Co/Pt multilayers reveals significantly different dynamics for optical vs. electrical heating. We attribute the disparate dynamics to the dependence of the electron-phonon interaction on the average energy and total number of initially excited electrons.

cond-mat.mes-hall↗

arXiv2017

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field Effect Transistors

Ballistic quantum transport calculations based on the non-equilbrium Green's function formalism show that field-effect transistor devices made from chevron-type graphene nanoribbons (CGNRs) could exhibit negative differential resistance with peak-to-valley ratios in excess of 4800 at room temperature as well as steep-slope switching with 6 mV/decade subtheshold swing over five orders of magnitude and ON-currents of 88$μ$A/$μ$m. This is enabled by the superlattice-like structure of these ribbons that have large periodic unit cells with regions of different effective bandgap, resulting in minibands and gaps in the density of states above the conduction band edge. The CGNR ribbon used in our proposed device has been previously fabricated with bottom-up chemical synthesis techniques and could be incorporated into an experimentally-realizable structure.

cond-mat.mes-hall↗

arXiv2017

Thickness Dependence of Spin-Orbit Torques in Ferrimagnetic GdFeCo Alloys

So far, studies of spin-orbit torques (SOT) in ferromagnets with perpendicular magnetic anisotropy (PMA) have been restricted to ultra thin samples, while a systematic study of its thickness dependence is still lacking in literature. In this article we discuss the thickness dependence of SOT in GdFeCo samples with bulk PMA. We show that the effective SOT fields are decreasing inversely as a function of thickness while the spin-Hall angle stays constant, as expected from angular momentum conservation. Further we show that even 30nm thick GdFeCo samples can be switched with SOT. This has important technological implications as the switching efficiency does not depend on the thickness. Finally, we investigate the composition dependence of SOT in 30nm thick GdFeCo samples and find that the spin torque effective field diverges at the magnetization compensation point.

cond-mat.mes-hall↗

arXiv2016

Ultrafast Magnetization Reversal by Picosecond Electrical Pulses

The field of spintronics involves the study of both spin and charge transport in solid state devices with a view toward increasing their functionality and efficiency. Alternatively, the field of ultrafast magnetism focuses on the use of femtosecond laser pulses to excite electrons in magnetic materials, which allows the magnetic order to be dramatically changed on unprecedented sub-picosecond time-scales. Here, we unite these two distinct research activities by using picosecond electrical pulses to rapidly excite electrons in a magnetic metal. We are able to deterministically and repetitively reverse the magnetization of a GdFeCo film with sub-10 picosecond electrical pulses. The magnetization reverses in ~10ps, which is more than an order of magnitude faster than any other electrically controlled magnetic switching. We attribute the deterministic switching of the magnetization to ultrafast excitation of the electrons, a fundamentally different mechanism from other current driven switching mechanisms such as spin-transfer-torque (STT) or spin-orbit-torque (SOT). The energy density required for switching is measured and the process is found to be efficient, projecting to only 4 fJ needed to switch a (20 nm)^3 cell, which is comparable to other state-of-the-art STT-MRAM memory devices. This discovery will launch a new field of research into picosecond spintronic phenomena and devices.

cond-mat.mes-hall↗

arXiv2016

The mechanical back-action of a spin-wave resonance in a magnetoelastic thin film on a surface acoustic wave

Surface acoustic waves (SAWs) traveling on the surface of a piezoelectric crystal can, through the magnetoelastic interaction, excite traveling spin-wave resonance in a magnetic film deposited on the substrate. This spin-wave resonance in the magnetic film creates a time dynamic surface stress of magnetoelastic origin that acts back on the surface of the piezoelectric and modifies the SAW propagation. Unlike previous analyses that treat the excitation as a magnon-phonon polariton, here the magnetoelastic film is treated as a perturbation modifying boundary conditions on the SAW. We use acoustical perturbation theory to find closed form expressions for the back-action surface stress and strain fields and the resultant SAW velocity shifts and attenuation. We demonstrate that the shear stress fields associated with this spin-wave back-action also generate effective surface currents on the piezoelectric both in-phase and out-of-phase with the driving SAW potential. Characterization of these surface currents and their applications in determination of the magnetoelastic coupling are discussed. The perturbative calculation is carried out explicitly to first order (a regime corresponding to many experimental situations of current interest) and we provide a sketch of the implications of the theory at higher order.

cond-mat.mtrl-sci↗

arXiv2016

Electron-phonon interaction during optically induced ultrafast magnetization dynamics of Au/GdFeCo bilayers

The temperature evolution of GdFeCo electrons following optical heating plays a key role in all optical switching of GdFeCo and is primarily governed by the strength of coupling between electrons and phonons. Typically, the strength of electron-phonon coupling in a metal is deduced by monitoring changes in reflectance following optical heating and then analyzing the transient reflectance with a simple two-temperature thermal model. In a magnetic metal, the change in reflectance cannot be assumed to depend only the electron and phonon temperatures because a metal's reflectance also depends on the magnetization. To deduce the electron-phonon coupling constant in GdFeCo, we analyze thermal transport in Au and GdFeCo bilayers following optical heating of the GdFeCo electrons. We use the reflectance of the Au layer to monitor the temperature evolution of the Au phonons. By interpreting the response of the bilayer to heating with a thermal model, we determine the electron-phonon coupling constant in GdFeCo to be 6 x 10^17 W/(m^3-K) corresponding to an electron-phonon relaxation time in GdFeCo of ~150 fs.

cond-mat.mtrl-sci↗

arXiv2016

Spin-Orbit Torques in ferrimagnetic GdFeCo Alloys

The spin-orbit torque switching of ferrimagnetic Gd$_x$(Fe$_{90}$Co$_{10}$)$_{100-x}$ films was studied for both transition metal (TM)-rich and rare earth (RE)-rich configurations. The spin-orbit torque driven magnetization switching follows the same handedness in TM-rich and RE-rich samples with respect to the total magnetization, but the handedness of the switching is reversed with respect to the TM magnetization. This indicates that the sign of the spin-orbit-torque-driven magnetic switching follows the total magnetization, although transport based techniques such as anomalous Hall effect are only sensitive to the transition metal magnetization. These results provide important insight into the physics of spin angular momentum transfer in materials with antiferromagnetically coupled sublattices.

cond-mat.mes-hall↗

arXiv2015

Single Crystal Functional Oxides on Silicon

Single crystalline thin films of complex oxides show a rich variety of functional properties such as ferroelectricity, piezoelectricity, ferro and antiferromagnetism etc. that have the potential for completely new electronic applications (1-2). Direct synthesis of such oxides on Si remains challenging due to the fundamental crystal chemistry and mechanical incompatibility of dissimilar interfaces (3-16). Here we report integration of thin (down to 1 unit cell) single crystalline, complex oxide films onto Si substrates, by epitaxial transfer at room temperature. In a field effect transistor using a transferred Pb0.2Zr0.8TiO3 (PZT) layer as the gate insulator, we demonstrate direct reversible control of the semiconductor channel charge with polarization state. These results represent the realization of long pursued but yet to be demonstrated single crystal functional oxides on-demand on silicon.

cond-mat.mtrl-sci↗

arXiv2015

Switching of Perpendicularly Polarized Nanomagnets with Spin Orbit Torque without an External Magnetic Field by Engineering a Tilted Anisotropy

Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a perpendicularly polarized magnet due to symmetry reasons. On the other hand, perpendicularly polarized magnets are preferred over in-plane magnets for high-density data storage applications due to their significantly larger thermal stability in ultra-scaled dimensions. Here we show that it is possible switch a perpendicularly polarized magnet by SOT without needing an external magnetic field. This is accomplished by engineering an anisotropy in the magnets such that the magnetic easy axis slightly tilts away from the film-normal. Such a tilted anisotropy breaks the symmetry of the problem and makes it possible to switch the magnet deterministically. Using a simple Ta/CoFeB/MgO/Ta heterostructure, we demonstrate reversible switching of the magnetization by reversing the polarity of the applied current. This demonstration presents a new approach for controlling nanomagnets with spin orbit torque.

cond-mat.mtrl-sci↗

arXiv2014

Negative Capacitance in a Ferroelectric Capacitor

The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy dissipation in conventional electronics, often termed as Boltzmann Tyranny. Negative capacitance in ferroelectric materials, which stems from the stored energy of phase transition, could provide a solution, but a direct measurement of negative capacitance has so far been elusive. Here we report the observation of negative capacitance in a thin, epitaxial ferroelectric film. When a voltage pulse is applied, the voltage across the ferroelectric capacitor is found to be decreasing with time-in exactly the opposite direction to which voltage for a regular capacitor should change. Analysis of this inductance-like behavior from a capacitor presents an unprecedented insight into the intrinsic energy profile of the ferroelectric material and could pave the way for completely new applications.

cond-mat.mes-hall↗

arXiv2014

Deterministic Domain Wall Motion Orthogonal To Current Flow Due To Spin Orbit Torque

Deterministic control of domain walls orthogonal to the direction of current flow is demonstrated by exploiting spin orbit torque in a perpendicularly polarized Ta/CoFeB/MgO multilayer in presence of an in-plane magnetic field. Notably, such orthogonal motion with respect to current flow is not possible from traditional spin transfer torque driven domain wall propagation even in presence of an external magnetic field. Reversing the polarity of either the current flow or the in-plane field is found to reverse the direction of the domain wall motion. From these measurements, which are unaffected by any conventional spin transfer torque by symmetry, we estimate the spin orbit torque efficiency of Ta to be 0.08.

cond-mat.mtrl-sci↗

arXiv2013

High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector

One important use of layered semiconductors such as molybdenum disulfide (MoS2) could be in making novel heterojunction devices leading to functionalities unachievable using conventional semiconductors. Here we demonstrate an ultrafast metal-semiconductor-metal heterojunction photodetector, made of MoS2 and amorphous silicon (a-Si), with rise and fall times of about 0.3 ms. This is more than an order of magnitude improvement over response times of conventional a-Si (~5 ms) and best reported MoS2 devices (~50 ms). The van-der-waals heterojunction presented here yields a high photoresponsivity of 210 mA/W at green light-the wavelength used in commercial imaging systems. This responsivity is 4X larger than that of the best MoS2 devices, and 2X larger than that of commercial a-Si devices. The 10X improvement in speed with high photoresponsivity provides a potential solution to a decades-long problem for thin film imagers and could find applications in large area electronics such as biomedical imaging and x-ray fluoroscopy.

cond-mat.mtrl-sci↗

arXiv2013

Non-volatile Spin Switch for Boolean and Non-Boolean Logic

We show that the established physics of spin valves together with the recently discovered giant spin-Hall effect could be used to construct Read and Write units that can be integrated into a single spin switch with input-output isolation, gain and fan-out similar to CMOS inverters, but with the information stored in nanomagnets making it non-volatile. Such spin switches could be interconnected, with no external amplification, just with passive circuit elements, to perform logic operations. Moreover, since the digitization and storage occurs naturally in the magnets, the voltages can be used to implement analog weighting for non-Boolean logic.

cond-mat.mes-hall↗

arXiv2012

Dissipative Transport in Rough Edge Graphene Nanoribbon Tunnel Transistors

We have studied quantum transport in Graphene Nanoribbon Tunnel Field-Effect Transistors. Unlike other studies on similar structures, we have included dissipative processes induced by inelastic electron-phonon scattering and edge roughness in the nanoribbon self-consistently within a non-equilibrium transport simulation. Our results show that the dissipative scattering imposes a limit to the minimum OFF current and a minimum subthreshold swing that can be obtained even for long channel lengths where direct source-drain tunneling is inhibited. The edge roughness, in presence of dissipative scattering, somewhat surprisingly, shows a classical behavior where it mostly reduces the maximum ON current achievable in this structure.

cond-mat.mes-hall↗

arXiv2012

A Massively Parallel Time Domain Phase Field Model for Multi-domain Ferroelectric Device Simulation

In this work, we report a massively parallel and time domain implementation of the 3D phase field model that can reach beyond micron scale and consider for arbitrary electrical and mechanical boundary conditions. The first part of the paper describes the theory and the numerical implementation of the model. A mixed-mode approach of finite difference and finite element grid has been used for calculating the nonlocal electrostatic and elastic interactions respectively. All the local and non-local interactions are shown to scale linearly up to thousands of processors. This massive parallelization allows us to directly compare our results with multiple experiments at the same size scale. The second part of the paper presents results of ferroelectric switching in devices based on the multi-ferroic BiFeO$_{3}$. We have particularly emphasized the importance of charge driven domain growth and the effect of electrical boundary conditions that explain the temporal evolution of ferroelectric domains observed in recent experiments. We also predict a mechanism of controlling domain size in the multi-domain ferroelectric switching that could be useful for practical applications.

cond-mat.mtrl-sci↗

arXiv2011

Intrinsic Cut-off Frequency in Scaled Graphene Transistors

Using 2-D self-consistent ballistic quantum transport simulations, we investigate the short-channel behavior of graphene field-effect transistors and its impact on the device transconductance and subsequently the intrinsic cut-off frequency (fT). Although with thin oxides, fT expectedly scales inversely with the gate length, significant band-to-band tunneling at OFF state leads to a departure from this trend in case of thick oxides. We also examine the effect of achieving better electrostatics at the cost of increased gate capacitance and illustrate that this can indeed degrade the fT. These considerations should be implicit in the optimization of graphene transistors for high-frequency applications.

cond-mat.mes-hall↗

arXiv2011

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/μm at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 μm.

cond-mat.mtrl-sci↗

arXiv2011

Role of Phonon Scattering in Graphene Nanoribbon Transistors: Non-Equilibrium Green's Function Method with Real Space Approach

Mode space approach has been used so far in NEGF to treat phonon scattering for computational efficiency. Here we perform a more rigorous quantum transport simulation in real space to consider interband scatterings as well. We show a seamless transition from ballistic to dissipative transport in graphene nanoribbon transistors by varying channel length. We find acoustic phonon (AP) scattering to be the dominant scattering mechanism within the relevant range of voltage bias. Optical phonon scattering is significant only when a large gate voltage is applied. In a longer channel device, the contribution of AP scattering to the dc current becomes more significant.

cond-mat.mes-hall↗