arXiv subjects

Seng Huat Lee

Publications and source records attributed to Seng Huat Lee.

At least 37 records · Page 2Linked to original sources

arXiv2023

Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4

We report c-axis transport studies on magnetic topological insulators Mn(Bi1-xSbx)2Te4. We performed systematic c-axis magnetoresistivity measurements under high magnetic fields (up to 35 T) on several representative samples. We find the lightly hole- and lightly electron-doped samples, while both having the same order of magnitude of carrier density and similar spin-flop transitions, exhibit sharp contrast in electronic anisotropy and transport mechanism. The electronic anisotropy is remarkably enhanced for the lightly hole-doped sample relative to pristine MnBi2Te4 but not for the lightly electron-doped sample. The lightly electron-doped sample displays a giant negative longitudinal magnetoresistivity (LMR) induced by the spin-valve effect at the spin-flop transition field, whereas the lightly hole-doped sample exhibits remarkable negative LMR consistent with the chiral anomaly behavior of a Weyl semimetal. Furthermore, we find the large negative LMR of the lightly hole-doped sample extends to a wide temperature range above the Néel temperature (T_N) where the magnetoconductivity is proportional to B^2. This fact, together with the short-range intralayer ferromagnetic correlation revealed in isothermal magnetization measurements, suggests the possible presence of the Weyl state above T_N. These results demonstrate that in the c-axis magnetotransport of Mn(Bi1-xSbx)2Te4, the spin scattering is dominant in the lightly electron-doped sample but overwhelmed by the chiral anomaly effect in the lightly hole-doped sample due to the presence of the Weyl state. These findings extend the understanding of the transport properties of Mn(Bi1-xSbx)2Te4.

cond-mat.mtrl-sci↗

arXiv2023

Large Violation of the Wiedemann Franz Law in Heusler, Ferromagnetic, Weyl Semimetal Co$_2$MnAl

The Wiedemann-Franz (WF) law relates the electronic component of the thermal conductivity to the electrical conductivity in metals through the Lorenz number. The WF law has proven to be remarkably robust, however violations have been observed in many topological materials. In this work, we report thermoelectric measurements conducted on Heusler, ferromagnetic, Weyl semimetal Co$_2$MnAl which shows a drastic, temperature dependent violation of the WF law below 300 K. We then discuss our result in the context of known physical explanations for WF law violation. Both the magnitude and temperature dependence of the violation in Co2MnAl are extreme, indicating that there may be more than one effect contributing to the violation in this system.

cond-mat.mtrl-sci↗

arXiv2023

Evidence of Weyl Fermion Enhanced Thermal Conductivity Under Magnetic Fields in Antiferromagnetic Topological Insulator Mn(Bi(1-x)Sb(x))2Te4

We report thermal conductivity and Seebeck effect measurements on Mn(Bi1-xSbx)2Te4 (MBST) with x = 0.26 under applied magnetic fields below 50 K. Our data shows clear indications of the electronic structure transition induced by the antiferromagnetic (AFM) to ferromagnetic (FM) transition driven by applied magnetic field as well as significant positive magnetothermal conductivity in the Weyl semimetal state of MBST. Further, by examining the dependence of magnetothermal conductivity on field orientation for MBST and comparison with the magnetothermal conductivity of MnBi2Te4 we see evidence of a contribution to thermal conductivity due to Weyl fermions in the FM phase of MBST. From the temperature dependence of Seebeck coefficient under magnetic fields for MBST, we also observed features consistent with the Fermi surface evolution from a hole pocket in the paramagnetic state to a Fermi surface with coexistence of electron and hole pockets in the FM state. These findings provide further evidence for the field-driven topological phase transition from an AFM topological insulator to a FM Weyl semimetal.

cond-mat.mtrl-sci↗

arXiv2023

Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals

Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature in magnetic topological semimetals is attracting enormous interest due to its fundamental importance and technological relevance. Mechanisms resulting in large intrinsic AHE include diverging Berry curvature in Weyl semimetals, anticrossing nodal rings or points of non-trivial bands, and noncollinear spin structures. Here we show that a half-topological semimetal (HTS) state near a topological critical point can provide a new mechanism for driving an exceptionally large AHE. We reveal this through a systematic experimental and theoretical study of the antiferromagnetic (AFM) half-Heusler compound TbPdBi. We not only observed an unusual AHE with a surprisingly large anomalous Hall angle ΘH (tan ΘH ~ 2, the largest among the antiferromagnets) in its field-driven ferromagnetic (FM) phase, but also found a distinct Hall resistivity peak in the canted AFM phase within a low field range, where its isothermal magnetization is nearly linearly dependent on the field. Moreover, we observed a nearly isotropic, giant negative magnetoresistance with a magnitude of ~98%. Our in-depth theoretical modelling demonstrates that these exotic transport properties originate from the HTS state. A minimal Berry curvature cancellation between the trivial spin-up and nontrivial spin-down bands results not only in an extremely large AHE, but it also enhances the spin polarization of the spin-down bands substantially and thus leads to a giant negative magnetoresistance. Our study advances the understanding of the interplay between band topology and magnetism and offers new clues for materials design for spintronics and other applications.

cond-mat.mes-hall↗

arXiv2023

Layer-by-layer disentanglement of Bloch states via frequency-domain photoemission

Layer-by-layer material engineering has enabled exotic quantum phenomena such as interfacial superconductivity and the quantum anomalous Hall effect. Meanwhile, deciphering electronic states layer-by-layer remains a fundamental scientific challenge. This is exemplified by the difficulty in understanding the layer origins of topological electronic states in magnetic topological insulators, which is key to understanding and controlling topological quantum phases. Here, we report a layer-encoded frequency-domain ARPES experiment on a magnetic topological insulator (MnBi2Te4)(Bi2Te3) to characterize the layer origins of electronic states. Infrared laser excitations launch coherent lattice vibrations with the layer index encoded by the vibration frequency; photoemission spectroscopy tracks the electron dynamics, where the layer information is decoded in the frequency domain. This layer-frequency correspondence reveals a surprising wavefunction relocation of the topological surface state from the top magnetic layer into the buried second layer, reconciling the controversy over the vanishing broken-symmetry energy gap in (MnBi2Te4)(Bi2Te3) and its related compounds. The layer-frequency correspondence can be harnessed to disentangle electronic states layer-by-layer in a broad class of van der Waals superlattices.

cond-mat.mes-hall↗

arXiv2022

Strong Room-Temperature Bulk Nonlinear Hall Effect in a Spin-Valley Locked Dirac Material

Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE's applications.

cond-mat.mes-hall↗

arXiv2022

Anomalous Landau quantization in intrinsic magnetic topological insulators

The intrinsic magnetic topological insulators, Mn(Bi1-xSbx)2Te4, in their spin-aligned strong field configuration have been identified as a Weyl semimetal with single pair of Weyl nodes1-4. A direct consequence of the Weyl state is the layer-dependent Chern number (C) in thin film quantization. Previous reports in MnBi2Te4 thin films revealed the higher C states in the spin alignment by either increasing the film thickness5 or controlling chemical potential into electron doping6-8. A clear picture of the higher Chern states is still missing as the situation is complicated by the emerging of surface band Landau levels (LLs) in magnetic field. Here, we report a tunable layer-dependent of C= 1 state with the Sb substitutions by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dualgated devices, consistent with the calculations of the bulk Weyl point separations in the compounds. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted from a theory of surface and bulk spin-polarized Landau levels spectrum in thin film magnetic topological insulators. Our results demonstrate that Mn(Bi1-xSbx)2Te4 thin films provide a highly tunable platform for probing the physics of the anomalous Landau quantization that is strongly sensitive to magnetic order.

cond-mat.mes-hall↗

arXiv2022

Nanomechanical Characterization of an Antiferromagnetic Topological Insulator

The antiferromagnetic topological insulator MnBi2Te4 (MBT) exhibits an ideal platform to study exotic topological phenomena and magnetic properties. The transport signatures of magnetic phase transitions in the MBT family materials have been well-studied. However, their mechanical properties and magneto-mechanical coupling have not been well-explored. We use nanoelectromechanical systems to study the intrinsic magnetism in MBT thin flakes via their magnetostrictive coupling. We investigate mechanical resonance signatures of magnetic phase transitions from antiferromagnetic (AFM) to canted antiferromagnetic (cAFM) to ferromagnetic (FM) phases versus magnetic field at different temperatures. The spin-flop transitions in MBT are revealed by frequency shifts of mechanical resonance. With temperatures going above TN, the transitions disappear in the resonance frequency map, consistent with transport measurements. We use a magnetostrictive model to correlate the frequency shifts with the spin-canting states. Our work demonstrates a technique to study magnetic phase transitions, magnetization and magnetoelastic properties of the magnetic topological insulator.

cond-mat.mes-hall↗

arXiv2022

Infrared Plasmons Propagate through a Hyperbolic Nodal Metal

Metals are canonical plasmonic media at infrared and optical wavelengths, allowing one to guide and manipulate light at the nano-scale. A special form of optical waveguiding is afforded by highly anisotropic crystals revealing the opposite signs of the dielectric functions along orthogonal directions. These media are classified as hyperbolic and include crystalline insulators, semiconductors and artificial metamaterials. Layered anisotropic metals are also anticipated to support hyperbolic waveguiding. Yet this behavior remains elusive, primarily because interband losses arrest the propagation of infrared modes. Here, we report on the observation of propagating hyperbolic waves in a prototypical layered nodal-line semimetal ZrSiSe. The observed waveguiding originates from polaritonic hybridization between near-infrared light and nodal-line plasmons. Unique nodal electronic structures simultaneously suppress interband loss and boost the plasmonic response, ultimately enabling the propagation of infrared modes through the bulk of the crystal.

cond-mat.mes-hall↗

arXiv2022

SnP$_2$S$_6$: A Promising Infrared Nonlinear Optical Crystal with Strong Non-Resonant Second Harmonic Generation and Phase-matchability

High-power infrared laser systems with broadband tunability are of great importance due to their wide range of applications in spectroscopy and free-space communications. These systems require nonlinear optical (NLO) crystals for wavelength up/down conversion using sum/difference frequency generation, respectively. NLO crystals need to satisfy many competing criteria, including large nonlinear optical susceptibility, large laser induced damage threshold (LIDT), wide transparency range and phase-matchability. Here, we report bulk single crystals of SnP_2S_6 with a large non-resonant SHG coefficient of d33= 53 pm/V at 1550nm and a large LIDT of 350 GW/cm^2 for femtosecond laser pulses. It also exhibits a broad transparency range from 0.54 μm to 8.5μm (bandgap of ~2.3 eV) and can be both Type I and Type II phase-matched. The complete linear and SHG tensors are measured as well as predicted by first principles calculations, and they are in excellent agreement. A proximate double-resonance condition in the electronic band structure for both the fundamental and the SHG light is shown to enhance the non-resonant SHG response. Therefore, SnP2S6 is an outstanding candidate for infrared laser applications.

physics.optics↗

arXiv2021

Interlayer magnetophononic coupling in MnBi2Te4

The emergence of magnetism in quantum materials creates a platform to realize spin-based applications in spintronics, magnetic memory, and quantum information science. A key to unlocking new functionalities in these materials is the discovery of tunable coupling between spins and other microscopic degrees of freedom. We present evidence for interlayer magnetophononic coupling in the layered magnetic topological insulator MnBi2Te4. Employing magneto-Raman spectroscopy, we observe anomalies in phonon scattering intensities across magnetic field-driven phase transitions, despite the absence of discernible static structural changes. This behavior is a consequence of a magnetophononic wave-mixing process that allows for the excitation of zone-boundary phonons that are otherwise 'forbidden' by momentum conservation. Our microscopic model based on density functional theory calculations reveals that this phenomenon can be attributed to phonons modulating the interlayer exchange coupling. Moreover, signatures of magnetophononic coupling are also observed in the time domain through the ultrafast excitation and detection of coherent phonons across magnetic transitions. In light of the intimate connection between magnetism and topology in MnBi2Te4, the magnetophononic coupling represents an important step towards coherent on-demand manipulation of magnetic topological phases.

cond-mat.mtrl-sci↗

arXiv2021

An Integrated Quantum Material Testbed with Multi-Resolution Photoemission Spectroscopy

We present the development of a multi-resolution photoemission spectroscopy (MRPES) setup which probes quantum materials in energy, momentum, space, and time. This versatile setup integrates three light sources in one photoemission setup, and can conveniently switch between traditional angle-resolved photoemission spectroscopy (ARPES), time-resolved ARPES (trARPES), and micron-scale spatially resolved ARPES ($μ$ARPES). It provides a first-time all-in-one solution to achieve an energy resolution $< 4$ meV, a time resolution $< 35$ fs, and a spatial resolution $\sim 10$ $μ$m in photoemission spectroscopy. Remarkably, we obtain the shortest time resolution among the trARPES setups using solid-state nonlinear crystals for frequency upconversion. Furthermore, this MRPES setup is integrated with a shadow-mask assisted molecular beam epitaxy system, which transforms the traditional photoemission spectroscopy into a quantum device characterization instrument. We demonstrate the functionalities of this novel quantum material testbed using FeSe/SrTiO$_3$ thin films and MnBi$_4$Te$_7$ magnetic topological insulators.

physics.ins-det↗

arXiv2021

Origins of electronic bands in antiferromagnetic topological insulator MnBi$_2$Te$_4$

Despite the rapid progress in understanding the first intrinsic magnetic topological insulator MnBi$_2$Te$_4$, its electronic structure remains a topic under debates. Here we perform a thorough spectroscopic investigation into the electronic structure of MnBi$_2$Te$_4$ via laser-based angle-resolved photoemission spectroscopy. Through quantitative analysis, we estimate an upper bound of 3 meV for the gap size of the topological surface state. Furthermore, our circular dichroism measurements reveal band chiralities for both the topological surface state and quasi-2D bands, which can be well reproduced in a band hybridization model. A numerical simulation of energy-momentum dispersions based on a four-band model with an additional step potential near the surface provides a promising explanation for the origin of the quasi-2D bands. Our study represents a solid step forward in reconciling the existing controversies in the electronic structure of MnBi$_2$Te$_4$, and provides an important framework to understand the electronic structures of other relevant topological materials MnBi$_{2n}$Te$_{3n+1}$.

cond-mat.mtrl-sci↗

arXiv2021

Direct evidence of ferromagnetism in MnSb2Te4

We report the magnetic imaging of ferromagnetic domains in the van der Waals single crystal MnSb2Te4 from two different sources using cryogenic magnetic force microscopy. The magnetic field dependence of the domains reveals very weak pinning of domain walls in MnSb2Te4, resulting in a negligibly small magnetic hysteresis loop. The temperature dependence of the domain contrast reveals a mean field like behavior, in good agreement with that of bulk magnetization measurements.

cond-mat.mtrl-sci↗

arXiv2020

Topological Magnetoelectric Switching on the Atomic Scale

Intrinsic magnetic topological insulators from MnBi2Te4 family promise realization of axion insulator, a theoretically predicted state of matter capable to mutually convert electric and magnetic signals, and whose properties are reminiscent of cosmological axion dark matter. Here we report the first experimental realization of room-temperature axionic single-spin switch in topological metamaterial MnBi2Te3. The metamaterial was in situ created in the scanning tunneling microscopy (STM) experiment by removing Te atomic layer from MnBi2Te4 surface using STM tip. Room temperature STM study of MnBi2Te3 revealed atomic scale variations of exchange gap and formation of nanoscale spin bubbles pinned at subsurface defects. We found that individual spin states in MnBi2Te3 can be reversibly switched using local electric field of STM tip with magnetoelectric response comparable to the theoretically predicted response of axion insulator. The observed topological surface magnetism develops significantly above bulk Néel temperature.

cond-mat.mtrl-sci↗

arXiv2020

Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4

The discovery of Weyl semimetals (WSMs) has fueled tremendous interest in condensed matter physics. WSMs require breaking of either inversion symmetry (IS) or time-reversal symmetry (TRS); they can be categorized into type-I and type-II WSMs, characterized by un-tilted and strongly tilted Weyl cones respectively. Type-I WSMs with breaking of IS or TRS and type-II WSMs with IS breaking have been realized experimentally, but TRS-breaking type-II WSM still remains elusive. In this article, we report an ideal TRS-breaking type-II WSM with only one pair of Weyl nodes observed in the antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4 under magnetic fields. This state is manifested by a large intrinsic anomalous Hall effect, a non-trivial $\mathrm{π}$ Berry phase of the cyclotron orbit and a large positive magnetoresistance in the ferromagnetic phase at an optimal sample composition. Our results establish a promising platform for exploring the physics underlying the long-sought, ideal TRS breaking type-II WSM.

cond-mat.mtrl-sci↗

arXiv2020

Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.

cond-mat.mtrl-sci↗

arXiv2020

Two phase transitions driven by surface electron-doping in WTe$_2$

WTe$_2$ is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here we demonstrate two non-monotonic changes in the electronic structure of WTe$_2$ upon \textit{in-situ} electron doping. The first phase transition is interpreted in terms of a shear displacement of the top WTe$_2$ layer, which realizes a local crystal structure not normally found in bulk WTe$_2$. The second phase transition is associated with stronger interactions between the dopant atoms and the host, both through hybridization and electric field. These results demonstrate that electron-doping can drive structural and electronics changes in bulk WTe$_2$ with implications for realizing nontrivial band structure changes in heterointerfaces and devices.

cond-mat.mtrl-sci↗