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Seohyeon Park

Publications and source records attributed to Seohyeon Park.

3 recordsLinked to original sources

Real-Time Execution with Autoregressive Policies

Real-time execution, enabled by asynchronous inference that ensures both smooth action trajectories and fast reactivity, is critical for realistic deployments of large-scale Vision-Language-Action models. However, recent work on real-time execution primarily focuses on variants of diffusion policies, even though it is more critical for autoregressive policies given their slower rollout speed in synchronous inference. In contrast, we demonstrate that autoregressive policies can achieve real-time execution by adjusting the tokenization horizon and applying constrained decoding, thereby guaranteeing strict latency bounds that enable multi-trajectory decoding to maximize performance. Across simulated and real-world environments, we find that the autoregressive policy consistently outperforms its equivalent-level flow-matching policy counterpart while achieving significantly improved task completion speeds from synchronous inference. Coupled with the inherent advantages of autoregressive policies, such as faster convergence and better generalizability in instruction-following, these results confirm that autoregressive policies can remain a competitive policy type supporting real-time execution.

cs.RO

First Demonstration of HZO/beta-Ga2O3 Ferroelectric FinFET with Improved Memory Window

We have experimentally demonstrated the effectiveness of beta-gallium oxide (beta-Ga2O3) ferroelectric fin field-effect transistors (Fe-FinFETs) for the first time. Atomic layer deposited (ALD) hafnium zirconium oxide (HZO) is used as the ferroelectric layer. The HZO/beta-Ga2O3 Fe-FinFETs have wider counterclockwise hysteresis loops in the transfer characteristics than that of conventional planar FET, achieving record-high memory window (MW) of 13.9 V in a single HZO layer. When normalized to the actual channel width, FinFETs show an improved ION/IOFF ratio of 2.3x10^7 and a subthreshold swing value of 110 mV/dec. The enhanced characteristics are attributed to the low-interface state density (Dit), showing good interface properties between the beta-Ga2O3 and HZO layer. The enhanced polarization due to larger electric fields across the entire ferroelectric layer in FinFETs is validated using Sentaurus TCAD. After 5x10^6 program/erase (PGM/ERS) cycles, the MW was maintained at 9.2 V, and the retention time was measured up to 3x10^4 s with low degradation. Therefore, the ultrawide bandgap (UWBG) Fe-FinFET was shown to be one of the promising candidates for high-density non-volatile memory devices.

physics.app-ph

Interval-censored linear quantile regression

Censored quantile regression has emerged as a prominent alternative to classical Cox's proportional hazards model or accelerated failure time model in both theoretical and applied statistics. While quantile regression has been extensively studied for right-censored survival data, methodologies for analyzing interval-censored data remain limited in the survival analysis literature. This paper introduces a novel local weighting approach for estimating linear censored quantile regression, specifically tailored to handle diverse forms of interval-censored survival data. The estimation equation and the corresponding convex objective function for the regression parameter can be constructed as a weighted average of quantile loss contributions at two interval endpoints. The weighting components are nonparametrically estimated using local kernel smoothing or ensemble machine learning techniques. To estimate the nonparametric distribution mass for interval-censored data, a modified EM algorithm for nonparametric maximum likelihood estimation is employed by introducing subject-specific latent Poisson variables. The proposed method's empirical performance is demonstrated through extensive simulation studies and real data analyses of two HIV/AIDS datasets.

stat.ME