arXiv subjects

Seong-Gon Kim

Publications and source records attributed to Seong-Gon Kim.

At least 19 recordsLinked to original sources

arXiv2026

Predicting spin orbit coupling effect in the electronic and magnetic properties of cobalt (Co) doped WSe2 monolayer

The electronic and magnetic properties of cobalt (Co) doped monolayer (ML) tungsten diselenide (WSe2) are investigated using the density functional theory with the on-site Hubbard potential correction (DFT+U) for the localized d orbitals of Co atom taking into account the spin orbit coupling (SOC) interaction. The results show that the substitution of Co at the W sites of ML WSe2 is energetically favorable under Se rich environment. We noticed that the Hund's exchange splitting (ΔH_{ex}) is dominant over the crystal field splitting (Δ_{cf}). The induced magnetic moment due to the Co-doped defect is ~3.00 μ_B per Co atom. The magnetic interaction between two Co atoms at the nearest neighbor separation depends mainly on the concentration of the impurity atoms. The calculated value of curie temperature (TC) is increasing with increasing impurity concentration satisfying the Zener model. Based on the results, it can be proposed that the Co-doped WSe2 monolayer is potential candidate to apply in spintronics, optoelectronics, and magnetic storage devices.

cond-mat.mtrl-sci↗

arXiv2026

Ballistic transport in nanodevices based on single-crystalline Cu thin film

In ballistic transport, the movement of charged carriers is essentially unimpeded by scattering events. In this limit, microscopic parameters such as crystal momentum, spin and quantum phases are well conserved, allowing electrons to maintain their quantum coherence over longer distances. Nanoscale materials, like carbon nanotubes, graphene, and nanowires, exhibit ballistic transport. However, their scalability in devices is significantly limited. While deposited metal films offer excellent scalability for nanodevices, achieving ballistic transport in these films poses a challenge due to their short electronic mean free path. Here, we investigated the electronic transport in cross-geometry devices fabricated with 90 nm-thick copper films without grain boundaries. We observed ballistic transport in devices with channel width smaller than 150 nm below 85 K by measuring negative bend resistance. Our findings would open the opportunity for probing intrinsic quantum properties of Cu, and for realizing scalable low-loss signal transmission and high-quality interconnects in semiconductor devices.

cond-mat.mes-hall↗

arXiv2024

Topological Fermi-arc surface state covered by floating electrons on a two-dimensional electride

Two-dimensional electrides can acquire topologically non-trivial phases due to intriguing interplay between the cationic atomic layers and anionic electron layers. However, experimental evidence of topological surface states has yet to be verified. Here, via angle-resolved photoemission spectroscopy (ARPES) and scanning tunnelling microscopy (STM), we probe the magnetic Weyl states of the ferromagnetic electride $[Gd_{2}$C]^{2+}\cdot2e^{-}$. In particular, the presence of Weyl cones and Fermi-arc states is demonstrated through photon energy-dependent ARPES measurements, agreeing with theoretical band structure calculations. Notably, the STM measurements reveal that the Fermi-arc states exist underneath a floating quantum electron liquid on the top Gd layer, forming double-stacked surface states in a heterostructure. Our work thus not only unveils the non-trivial topology of the $[Gd_{2}$C]^{2+}\cdot2e^{-}$ electride but also realizes a surface heterostructure that can host phenomena distinct from the bulk.

cond-mat.mtrl-sci↗

arXiv2023

Electronic properties of kagome metal ScV6Sn6 using high field torque magnetometry

This work presents electronic properties of the kagome metal ScV6Sn6 using de Haas-van Alphen (dHvA) oscillations and density functional theory (DFT) calculations. The torque signal with the applied fields up to 43 T shows clear dHvA oscillations with six major frequencies, five of them are below 400 T (low frequencies) and one is nearly 2800 T (high frequency). The Berry phase calculated using the Landau level fan diagram near the quantum limit is approximately π, which suggests the non-trivial band topology in ScV6Sn6. To explain the experimental data, we computed the electronic band structure and Fermi surface using DFT in both the pristine and charge density wave (CDW) phases. Our results confirm that the CDW phase is energetically favorable, and the Fermi surface undergoes a severe reconstruction in the CDW state. Furthermore, the angular dependence of the dHvA frequencies are consistent with the DFT calculations. The detailed electronic properties presented here are invaluable for understanding the electronic structure and CDWorder in ScV6Sn6, as well as in other vanadium-based kagome systems.

cond-mat.str-el↗

arXiv2023

First-principles prediction of structural, magnetic properties of Cr-substituted strontium hexaferrite, and its site preference

To investigate the structural and magnetic properties of Cr-doped M-type strontium hexaferrite (SrFe$_{12}$O$_{19}$) with x = (0.0, 0.5, 1.0), we perform first-principles total-energy calculations relied on density functional theory. Based on the calculation of the substitution energy of Cr in strontium hexaferrite and formation probability analysis, we conclude that the doped Cr atoms prefer to occupy the 2a, 12k, and 4f$_{2}$ sites which is in good agreement with the experimental findings. Due to Cr$^{3+}$ ion moment, 3 {$μ_B$}, smaller than that of Fe$^{3+}$ ion, 5 {$μ_B$}, saturation magnetization (M$_{s}$) reduce rapidly as the concentration of Cr increases in strontium hexaferrite. The magnetic anisotropic field $\left(H_{a}\right)$ rises with an increasing fraction of Cr despite a significant reduction of magnetization and a slight increase of magnetocrystalline anisotropy $\left(K_{1}\right)$.The cause for the rise in magnetic anisotropy field $\left(H_{a}\right)$ with an increasing fraction of Cr is further emphasized by our formation probability study. Cr$^{3+}$ ions prefer to occupy the 2a sites at lower temperatures, but as the temperature rises, it is more likely that they will occupy the 12k site. Cr$^{3+}$ ions are more likely to occupy the 12k site than the 2a site at a specific annealing temperature (>700°C).

cond-mat.mtrl-sci↗

arXiv2022

Quantum electron liquid and its possible phase transition

Purely quantum electron systems exhibit intriguing correlated electronic phases by virtue of quantum fluctuations in addition to electron-electron interactions. To realize such quantum electron systems, a key ingredient is dense electrons decoupled from other degrees of freedom. Here, we report the discovery of a pure quantum electron liquid, which spreads up to ~ 3 Å in the vacuum on the surface of electride crystal. An extremely high electron density and its weak hybridisation with buried atomic orbitals evidence the quantum and pure nature of electrons, that exhibit a polarized liquid phase as demonstrated by our spin-dependent measurement. Further, upon enhancing the electron correlation strength, the dynamics of quantum electrons changes to that of non-Fermi liquid along with an anomalous band deformation, suggestive of a transition to a hexatic liquid crystal phase. Our findings cultivate the frontier of quantum electron systems, and serve as a platform for exploring correlated electronic phases in a pure fashion.

cond-mat.str-el↗

arXiv2022

First principle investigations of the structural, electronic, and phase stability in 2D layered ZnSb

Recently, the two dimensional (2D) materials have become a potential candidates for various technological applications in spintronics and optoelectronics. In the present study, the structural, electronic, and phase stability of 2D layered ZnSb compounds of four different phases viz. wurzite(w), tetragonal (t), hexagonal (h), and orthorhombic (o) have been tuned using the first principle calculations based on density functional theory (DFT). We invoked the Perdew-Burke-Ernzerhof (PBE) functional and the projected augmented wave (PAW) method during all the calculations. Based on our numerical results, we predicted the novel tetragonal phase as stable phase of ZnSb next to existing orthorhombic structure. We reported the pressure induced phase transition between orthorhombic to tetragonal phase at 12.48 GPa/atom. The projected density of states indicates the strong p-d hybridization between Sb-5p and Zn-3d states confirming the nature of strong covalent bonding between them. The electronic band structures suggest that t-ZnSb, w-ZnSb, and h-ZnSb are metallic in nature whereas o-ZnSb is semiconducting with narrow band gap of 0.03 eV using PBE. We predicted the possibility of extracting the two dimensional (2D) monolayer sheet in t-ZnSb and o-ZnSb according to the exfoliation energy criterion. In addition, the 2D monolayer (ML) of o-ZnSb has been predicted to be dynamically stable but that of t-ZnSb is not stable as manifested in phonon dispersion bands. Surprisingly, the semiconducting band gap nature of o-ZnSb changes from indirect and narrow to direct and sizable while going from 3D bulk to 2D ML structure. Further, we estimated the value of work functions for the surfaces of t-ZnSb and o-ZnSb as 4.61 eV and 4.04 eV respectively. Such materials can find the niche applications in next generation electronic devices utilizing 2D hetero-structures.

physics.comp-ph↗

arXiv2020

Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor

We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.

cond-mat.mtrl-sci↗

arXiv2018

Correlation between site preference and magnetic properties of Zn-Sn-substituted strontium hexaferrite

The site preference and magnetic properties of Zn, Sn and Zn-Sn substituted M-type strontium hexaferrite (SrFe$_{12}$O$_{19}$) have been investigated using first-principles total energy calculations based on density functional theory. The site occupancy of substituted atoms were estimated by calculating the substitution energies of different configurations. The distribution of different configurations during the annealing process at high temperature was determined using the formation probabilities of configurations to calculate magnetic properties of substituted strontium hexaferrite. We found that the magnetization and magnetocrystalline anisotropy are closely related to the distributions of Zn-Sn ions on the five Fe sites. Our calculation show that in SrFe$_{11.5}$Zn$_{0.5}$O$_{19}$, Zn atoms prefer to occupy $4f_1$, $12k$, and $2a$ sites with occupation probability of 78%, 19% and 3%, respectively, while in SrFe$_{11.5}$SnO$_{19}$, Sn atoms occupy the $12k$ and $4f_2$ sites with occupation probability of 54% and 46%, respectively. We also found that in SrFe$_{11}$Zn$_{0.5}$Sn$_{0.5}$O$_{19}$, (Zn,Sn) atom pairs prefer to occupy the ($4f_1$, $4f_2$), ($4f_1$, $12k$) and ($12k$, $12k$) sites with occupation probability of 82%, 8% and 6%, respectively. Our calculation shows that the increase of magnetization and the reduction of magnetic anisotropy in Zn-Sn substituted M-type strontium hexaferrite as observed experimentally is due to the occupation of (Zn,Sn) pairs at the ($4f_1$, $4f_2$) sites.

cond-mat.mtrl-sci↗

arXiv2015

Site occupancy and magnetic properties of Al-substituted M-type strontium hexaferrite

We use first-principles total-energy calculations based on density functional theory to study the site occupancy and magnetic properties of Al-substituted $M$-type strontium hexaferrite SrFe$_{12-x}$Al$_{x}$O$_{19}$ with $x=0.5$ and $x=1.0$. We find that the non-magnetic Al$^{3+}$ ions preferentially replace Fe$^{3+}$ ions at two of the majority spin sites, $2a$ and $12k$, eliminating their positive contribution to the total magnetization causing the saturation magnetization $M_s$ to be reduced as Al concentration $x$ is increased. Our formation probability analysis further provides the explanation for increased magnetic anisotropy field when the fraction of Al is increased. Although Al$^{3+}$ ions preferentially occupy the $2a$ sites at a low temperature, the occupation probability of the $12k$ site increases with the rise of the temperature. At a typical annealing temperature ($> 700\,^{\circ}{\rm C}$) Al$^{3+}$ ions are much more likely to occupy the $12k$ site than the $2a$ site. Although this causes the magnetocrystalline anisotropy $K_1$ to be reduced slightly, the reduction in $M_s$ is much more significant. Their combined effect causes the anisotropy field $H_a$ to increase as the fraction of Al is increased, consistent with recent experimental measurements.

cond-mat.mtrl-sci↗

arXiv2014

Structural, elastic and thermal properties of cementite (Fe$_3$C) calculated using Modified Embedded Atom Method

Structural, elastic and thermal properties of cementite (Fe$_3$C) were studied using a Modified Embedded Atom Method (MEAM) potential for iron-carbon (Fe-C) alloys. Previously developed Fe and C single element potentials were used to develop an Fe-C alloy MEAM potential, using a statistically-based optimization scheme to reproduce structural and elastic properties of cementite, the interstitial energies of C in bcc Fe as well as heat of formation of Fe-C alloys in L$_{12}$ and B$_1$ structures. The stability of cementite was investigated by molecular dynamics simulations at high temperatures. The nine single crystal elastic constants for cementite were obtained by computing total energies for strained cells. Polycrystalline elastic moduli for cementite were calculated from the single crystal elastic constants of cementite. The formation energies of (001), (010), and (100) surfaces of cementite were also calculated. The melting temperature and the variation of specific heat and volume with respect to temperature were investigated by performing a two-phase (solid/liquid) molecular dynamics simulation of cementite. The predictions of the potential are in good agreement with first-principles calculations and experiments.

cond-mat.mtrl-sci↗

arXiv2013

Theory of magnetic enhancement in strontium hexaferrite through Zn-Sn pair substitution

We study the site occupancy and magnetic properties of Zn-Sn substituted M-type Sr-hexaferrite SrFe$_{12-x}$(Zn$_{0.5}$Sn$_{0.5}$)$_x$O$_{19}$ with x = 1 using first-principles total-energy calculations. We find that in a ground-state configuration Zn-Sn ions preferentially occupy $4f_1$ and $4f_2$ sites unlike the model previously suggested by Ghasemi et al. [J. Appl. Phys, \textbf{107}, 09A734 (2010)], where Zn$^{2+}$ and Sn$^{4+}$ ions occupy the $2b$ and $4f_2$ sites. Density-functional theory calculations show that our model has a lower total energy by more than 0.2 eV per unit cell compared to Ghasemi's model. More importantly, the latter does not show an increase in saturation magnetization ($M_s$) compared to the pure $M$-type Sr-hexaferrite, in disagreement with the experiment. On the other hand, our model correctly predicts a rapid increase in $M_s$ as well as a decrease in magnetic anisotropy compared to the pure $M$-type Sr-hexaferrite, consistent with experimental measurements.

cond-mat.mtrl-sci↗

arXiv2012

MEAM potentials for Al, Si, Mg, Cu, and Fe alloys

A set of Modified Embedded Atom Method (MEAM) potentials for the interactions between Al, Si, Mg, Cu, and Fe was developed from a combination of each element's MEAM potential in order to study metal alloying. Previously published MEAM parameters of single elements have been improved for better agreement to the generalized stacking fault energy (GSFE) curves when compared with ab-initio generated GSFE curves. The MEAM parameters for element pairs were constructed based on the structural and elastic properties of element pairs in the NaCl reference structure garnered from ab-initio calculations, with adjustment to reproduce the ab-initio heat of formation of the most stable binary compounds. The new MEAM potentials were validated by comparing the formation energies of defects, equilibrium volumes, elastic moduli, and heat of formation for several binary compounds with ab-initio simulations and experiments. Single elements in their ground state crystal structure were subjected to heating to test the potentials at elevated temperatures. An Al potential was modified to avoid formation of an unphysical solid structure at high temperatures. The thermal expansion coefficient of a compound with the composition of AA 6061 alloy was evaluated and compared with experimental values. MEAM potential tests performed in this work, utilizing the universal Atomistic Simulation Environment (ASE), are distributed to facilitate reproducibility of the results.

cond-mat.mtrl-sci↗

arXiv2012

The effects of Vanadium on the strength of a bcc Fe Σ3(111)[1-10] grain boundary

The effects of micro-alloying element, vanadium, on a bcc Fe Σ3(111)[1-10] symmetric tilt grain boundary strength are studied using density functional theory calculations. The lowest energy configuration of the grain boundary structure are obtained from the first-principles calculations. The substitutional and interstitial point defect formation energies of vanadium in the grain boundary are compared. The substitutional defect is prefered to interstitial one. The segregation energies of vanadium onto the grain boundary and its fractured surfaces are computed. The cohesive energy calculation of the grain boundary with and without vanadium show that vanadium strengthen the bcc iron Σ3(111)[1-10] grain boundary.

cond-mat.mtrl-sci↗

arXiv2007

Ground-state structure of the hydrogen double vacancy on Pd(111)

We determine the ground-state structure of a double vacancy in a hydrogen monolayer on the Pd(111) surface. We represent the double vacancy as a triple vacancy containing one additional hydrogen atom. The potential-energy surface for a hydrogen atom moving in the triple vacancy is obtained by density-functional theory, and the wave function of the fully quantum hydrogen atom is obtained by solving the Schrödinger equation. We find that an H atom in a divacancy defect experiences significant quantum effects, and that the ground-state wave function is centered at the hcp site rather than the fcc site normally occupied by H atoms on Pd(111). Our results agree well with scanning tunneling microscopy images.

cond-mat.mtrl-sci↗

arXiv2007

Structure of AlSb(001) and GaSb(001) Surfaces Under Extreme Sb-rich Conditions

We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions. For AlSb(001), the predictions are in excellent agreement with experimentally observed reconstructions. For GaSb(001), we show that previously proposed model accounts for the experimentally observed reconstructions under Ga-rich growth conditions, but fails to explain the experimental observations under Sb-rich conditions. We propose a new model that has a substantially lower surface energy than all (nx5)-like reconstructions proposed previously and that, in addition, leads to a simulated STM image in better agreement with experiment than existing models. However, this new model has higher surface energy than some of (4x3)-like reconstructions, models with periodicity that has not been observed. Hence we conclude that the experimentally observed (1x5) and (2x5) structures on GaSb(001) are kinetically limited rather than at the ground state.

cond-mat.mtrl-sci↗

arXiv2007

The effect of Fe atoms on the adsorption of a W atom on W(100) surface

We report a first-principles calculation that models the effect of iron (Fe) atoms on the adsorption of a tungsten (W) atom on W(100) surfaces. The adsorption of a W atom on a clean W(100) surface is compared with that of a W atom on a W(100) surface covered with a monolayer of Fe atoms. The total energy of the system is computed as the function of the height of the W adatom. Our result shows that the W atom first adsorbs on top of the Fe monolayer. Then the W atom can replace one of the Fe atoms through a path with a moderate energy barrier and reduce its energy further. This intermediate site makes the adsorption (and desorption) of W atoms a two-step process in the presence of Fe atoms and lowers the overall adsorption energy by nearly 2.4 eV. The Fe atoms also provide a surface for W atoms to adsorb facilitating the diffusion of W atoms. The combination of these two effects result in a much more efficient desorption and diffusion of W atoms in the presence of Fe atoms. Our result provides a fundamental mechanism that can explain the activated sintering of tungsten by Fe atoms.

cond-mat.mtrl-sci↗

arXiv2007

A multi-objective optimization procedure to develop modified-embedded-atom-method potentials: an application to magnesium

We have developed a multi-objective optimization (MOO) procedure to construct modified-embedded-atom-method (MEAM) potentials with minimal manual fitting. This procedure has been applied successfully to develop a new MEAM potential for magnesium. The MOO procedure is designed to optimally reproduce multiple target values that consist of important materials properties obtained from experiments and first-principles calculations based on density-functional theory (DFT). The optimized target quantities include elastic constants, cohesive energies, surface energies, vacancy formation energies, and the forces on atoms in a variety of structures. The accuracy of the new potential is assessed by computing several material properties of Mg and comparing them with those obtained from other potentials previously published. We found that the present MEAM potential yields a significantly better overall agreement with DFT calculations and experiments.

cond-mat.mtrl-sci↗