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arXiv · 2001.06941

Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor

Dinh Loc Duong·Seong-Gon Kim·Young Hee Lee
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Abstract

We demonstrate the gate-tunability of the long-range magnetic order in a p-type V-doped WSe2 monolayer using ab initio calculations. We found that at a low V-doping concentration limit, the long-range ferromagnetic order is enhanced by increasing the hole density. In contrast, the short-range antiferromagnetic order is manifested at a high electron density by full compensation of the p-type V doping concentration. The hole-mediated long-range magnetic exchange is ~70 meV, thus strongly suggesting the ferromagnetism in V-doped WSe2 at room temperature. Our findings on strong coupling between charge and spin order in V-doped WSe2 provide plenty of room for multifunctional gate-tunable spintronics.

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Dinh Loc Duong, Seong-Gon Kim, Young Hee Lee. 2020-01-20. Gate modulation of the long-range magnetic order in a vanadium-doped WSe2 semiconductor. https://doi.org/10.1063/5.0010730

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