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Sergio Valencia

Publications and source records attributed to Sergio Valencia.

16 recordsLinked to original sources

Writing and erasing skyrmions by single ultrafast laser pulses in monolayer Janus 2D magnets

Skyrmions in 2D magnets are promising candidates for nonvolatile, low-power, and high-density spintronic memories. However, their experimental realization at the 2D limit remains challenging, owing to the difficulty in engineering the required chiral magnetic interactions. Here, we report the creation and direct imaging of N\'eel-type skyrmions in Janus 2D chromium chalcogenides using synchrotron X-ray photoemission electron microscopy, and scanning nitrogen-vacancy magnetometry, which exhibit field-free stability, nonvolatility, and size tunability. First-principles calculations and micromagnetic simulations reveal that Janus-surface-induced inversion-symmetry breaking enhances the Dzyaloshinskii-Moriya interaction, providing the microscopic mechanism for skyrmion stabilization and tunability. We further achieve reversible skyrmion writing and erasing using a single ultrafast laser pulse in a magnetic field as low as 300 Oe, demonstrating the excellent manipulability of this 2D magnetic system. These results establish Janus engineering as a route to creating and manipulating nonvolatile skyrmions in atomically thin magnets, with implications for skyrmion-based low-power spintronic devices.

cond-mat.mtrl-sci

USFetal: Tools for Fetal Brain Ultrasound Compounding

Ultrasound offers a safe, cost-effective, and widely accessible technology for fetal brain imaging, making it especially suitable for routine clinical use. However, it suffers from view-dependent artifacts, operator variability, and a limited field of view, which make interpretation and quantitative evaluation challenging. Ultrasound compounding aims to overcome these limitations by integrating complementary information from multiple 3D acquisitions into a single, coherent volumetric representation. This work provides four main contributions: (1) We present the first systematic categorization of computational strategies for fetal brain ultrasound compounding, including both classical techniques and modern learning-based frameworks. (2) We implement and compare representative methods across four key categories - multi-scale, transformation-based, variational, and deep learning approaches - emphasizing their core principles and practical advantages. (3) Motivated by the lack of full-view, artifact-free ground truth required for supervised learning, we focus on unsupervised and self-supervised strategies and introduce two new deep learning based approaches: a self-supervised compounding framework and an adaptation of unsupervised deep plug-and-play priors for compounding. (4) We conduct a comprehensive evaluation on ten multi-view fetal brain ultrasound datasets, using both expert radiologist scoring and standard quantitative image-quality metrics. We also release the USFetal Compounding Toolbox, publicly available to support benchmarking and future research. Keywords: Ultrasound compounding, fetal brain, deep learning, self-supervised, unsupervised.

eess.IV

Spontaneous nonreciprocal transport in a gate-tunable ferromagnetic Rashba 2-dimensional electron gas

The broken inversion symmetry at interfaces of complex oxides gives rise to emergent phenomena, including ferromagnetism and Rashba spin-orbit coupling (SOC), which profoundly influence the electronic structure by entangling spin and momentum. While the interplay between Rashba SOC and ferromagnetism is theoretically intriguing, its experimental manifestations remain largely unexplored. Here, we demonstrate that ferromagnetic 2DEGs at SrTiO$_3$-based interfaces exhibit spontaneous nonreciprocal transport - a distinctive hallmark of Rashba ferromagnets - even in the absence of an external magnetic field. This nonreciprocal response, along with clear signatures of ferromagnetism such as anisotropic magnetoresistance and the anomalous Hall effect (AHE), is strongly tunable by gate voltage. Remarkably, the AHE not only varies in amplitude but even reverses sign, reflecting a subtle interplay between Fermi level position and Berry curvature distribution. These results establish SrTiO$_3$ 2DEGs as a model platform for studying Rashba ferromagnetism and demonstrate active control over transport phenomena in time- and inversion-symmetry-broken systems, paving the way for gate-tunable spintronic devices.

cond-mat.str-el

Analog control of electrical conductivity in La0.5Sr0.5FeO3-{\delta} through oxygen deficiency induced magnetic transition

Switchability of materials properties by applying controlled stimuli such as voltage pulses is an emerging field of study with applicability in adaptive and programmable devices like neuromorphic transistors or non-emissive smart displays. One of the most exciting approaches to modulate materials performance is mobile ion/vacancy insertion for inducing changes in relevant electrical, optical, or magnetic properties, among others. Unveiling the interplay between changes in the concentration of mobile defects (like oxygen vacancies) and functional properties in relevant materials represents a step forward for underpinning the emerging oxide iontronics discipline. In this work, electrochemical oxide-ion pumping cells were fabricated for an analog control of the oxygen stoichiometry in thin films of mixed ionic-electronic conductor La0.5Sr0.5FeO3-{\delta}. We demonstrate over more than 4 orders of magnitude electronic conductivity control within the same crystallographic phase through the precise and continuous voltage control of the oxygen stoichiometry. We show that behind the modification of the transport properties of the material lays a paramagnetic-to-antiferromagnetic transition. We exploit such magnetoelectric coupling to show control over the exchange interaction between La0.5Sr0.5FeO3-{\delta} and a ferromagnetic Co layer deposited on top.

cond-mat.mtrl-sci

Domain nucleation across the metal-insulator transition of self-strained V2O3 films

Bulk V2O3 features concomitant metal-insulator (MIT) and structural (SPT) phase transitions at TC ~ 160 K. In thin films, where the substrate clamping can impose geometrical restrictions on the SPT, the epitaxial relation between the V2O3 film and substrate can have a profound effect on the MIT. Here we present a detailed characterization of domain nucleation and growth across the MIT in (001)-oriented V2O3 films grown on sapphire. By combining scanning electron transmission microscopy (STEM) and photoelectron emission microscopy (PEEM), we imaged the MIT with planar and vertical resolution. We observed that upon cooling, insulating domains nucleate at the top of the film, where strain is lowest, and expand downwards and laterally. This growth is arrested at a critical thickness of 50 nm from the substrate interface, leaving a persistent bottom metallic layer. As a result, the MIT cannot take place in the interior of films below this critical thickness. However, PEEM measurements revealed that insulating domains can still form on a very thin superficial layer at the top interface. Our results demonstrate the intricate spatial complexity of the MIT in clamped V2O3, especially the strain-induced large variations along the c-axis. Engineering the thickness-dependent MIT can provide an unconventional way to build out-of-plane geometry devices by using the persistent bottom metal layer as a native electrode.

cond-mat.mtrl-sci

Probing magnetic ordering in air stable iron-rich van der Waals minerals

In the rapidly expanding field of two-dimensional materials, magnetic monolayers show great promise for the future applications in nanoelectronics, data storage, and sensing. The research in intrinsically magnetic two-dimensional materials mainly focuses on synthetic iodide and telluride based compounds, which inherently suffer from the lack of ambient stability. So far, naturally occurring layered magnetic materials have been vastly overlooked. These minerals offer a unique opportunity to explore air-stable complex layered systems with high concentration of local moment bearing ions. We demonstrate magnetic ordering in iron-rich two-dimensional phyllosilicates, focusing on mineral species of minnesotaite, annite, and biotite. These are naturally occurring van der Waals magnetic materials which integrate local moment baring ions of iron via magnesium/aluminium substitution in their octahedral sites. Due to self-inherent capping by silicate/aluminate tetrahedral groups, ultra-thin layers are air-stable. Chemical characterization, quantitative elemental analysis, and iron oxidation states were determined via Raman spectroscopy, wavelength disperse X-ray spectroscopy, X-ray absorption spectroscopy, and X-ray photoelectron spectroscopy. Superconducting quantum interference device magnetometry measurements were performed to examine the magnetic ordering. These layered materials exhibit paramagnetic or superparamagnetic characteristics at room temperature. At low temperature ferrimagnetic or antiferromagnetic ordering occurs, with the critical ordering temperature of 38.7 K for minnesotaite, 36.1 K for annite, and 4.9 K for biotite. In-field magnetic force microscopy on iron bearing phyllosilicates confirmed the paramagnetic response at room temperature, present down to monolayers.

cond-mat.mtrl-sci

Strain-induced Shape Anisotropy in Antiferromagnetic Structures

We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different domain structures and we identify magnetoelastic interactions that are distinct for different domain configurations. We reproduce the experimental observations by modeling the magnetoelastic interactions, considering spontaneous strain induced by the domain configuration, as well as elastic strain due to the substrate and the shape of the patterns. This allows us to demonstrate and explain how the variation of the aspect ratio of rectangular elements can be used to control the antiferromagnetic ground state domain configuration. Shape-dependent strain does not only need to be considered in the design of antiferromagnetic devices, but can potentially be used to tailor their properties, providing an additional handle to control antiferromagnets.

cond-mat.mtrl-sci

Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$

Rashba interfaces yield efficient spin-charge interconversion and give rise to nonreciprocal transport phenomena. Here, we report magnetotransport experiments in few-nanometer-thick films of PdCoO$_2$, a delafossite oxide known to display a large Rashba splitting and surface ferromagnetism. By analyzing the angle dependence of the first- and second-harmonic longitudinal and transverse resistivities, we identify a Rashba-driven unidirectional magnetoresistance that competes with the anomalous Nernst effect below the Curie point. We estimate a Rashba coefficient of 0.75 {\pm} 0.3 eV Å and argue that our results qualify delafossites as a new family of oxides for nano-spintronics and spin-orbitronics, beyond perovskite materials.

cond-mat.mes-hall

Identification of Néel vector orientation in antiferromagnetic domains switched by currents in NiO/Pt thin films

Understanding the electrical manipulation of antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequency. Focusing on collinear insulating antiferromagnetic NiO/Pt thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel vector direction changes. We demonstrate electrical switching between different T-domains by current pulses, finding that the Néel vector orientation in these domains is along $[\pm5\ \pm5\ 19]$, different compared to the bulk $<11\bar{2}>$ directions. The final state of the Néel vector $\textbf{n}$ switching after current pulses $\textbf{j}$ along the $[1\ \pm1\ 0]$ directions is $\textbf{n}\parallel \textbf{j}$. By comparing the observed Néel vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as $b_{0}+2b_{1}=3*10^7 J\ m^{-3}$ . This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.

cond-mat.mtrl-sci

Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films

Reading the magnetic state of antiferromagnetic (AFM) thin films is key for AFM spintronic devices. We investigate the underlying physics behind the spin Hall magnetoresistance (SMR) of bilayers of platinum and insulating AFM hematite (α-Fe2O3) and find an SMR efficiency of up to 0.1%, comparable to ferromagnetic based structures. To understand the observed complex SMR field dependence, we analyse the effect of misalignments of the magnetic axis that arise during growth of thin films, by electrical measurements and direct magnetic imaging, and find that a small deviation can result in significant signatures in the SMR response. This highlights the care that must be taken when interpreting SMR measurements on AFM spin textures.

cond-mat.mtrl-sci

Giant topological Hall effect in correlated oxide thin films

Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures also amplify magnetoelectric effects or electroresistance in mesostructures. However, how spatially varying spin textures may influence electron transport in the presence of correlations remains unclear. Here we demonstrate a very large topological Hall effect (THE) in thin films of a lightly electron-doped charge-transfer insulator, (Ca, Ce)MnO3. Magnetic force microscopy reveals the presence of magnetic bubbles, whose density vs. magnetic field peaks near the THE maximum, as is expected to occur in skyrmion systems. The THE critically depends on carrier concentration and diverges at low doping, near the metal-insulator transition. We discuss the strong amplification of the THE by correlation effects and give perspectives for its non-volatile control by electric fields.

cond-mat.mtrl-sci

Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging

We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

cond-mat.mtrl-sci

Strain-gradient-induced magnetic anisotropy in straight-stripe mixed-phase bismuth ferrites: An insight into flexomagnetic phenomenon

Implementation of antiferromagnetic compounds as active elements in spintronics has been hindered by their insensitive nature against external perturbations which causes difficulties in switching among different antiferromagnetic spin configurations. Electrically-controllable strain gradient can become a key parameter to tune the antiferromagnetic states of multiferroic materials. We have discovered a correlation between an electrically-written straight-stripe mixed-phase boundary and an in-plane antiferromagnetic spin axis in highly-elongated La-5%-doped BiFeO$_{3}$ thin films by performing polarization-dependent photoemission electron microscopy in conjunction with cluster model calculations. Model Hamiltonian calculation for the single-ion anisotropy including the spin-orbit interaction has been performed to figure out the physical origin of the link between the strain gradient present in the mixed phase area and its antiferromagnetic spin axis. Our findings enable estimation of the strain-gradient-induced magnetic anisotropy energy per Fe ion at around 5$\times$10$^{-12}$ eV m, and provide a new pathway towards an electric-field-induced 90$^{\circ}$ rotation of antiferromagnetic spin axis at room temperature by flexomagnetism.

cond-mat.str-el

2D layered transport properties from topological insulator Bi$_2$Se$_3$ single crystals and micro flakes

Low-field magnetotransport measurements of topological insulators such as Bi$_2$Se$_3$ are important for revealing the nature of topological surface states by quantum corrections to the conductivity, such as weak-antilocalization. Recently, a rich variety of high-field magnetotransport properties in the regime of high electron densities ($\sim10^{19}$ cm$^{-3}$) were reported, which can be related to additional two-dimensional layered conductivity, hampering the identification of the topological surface states. Here, we report that quantum corrections to the electronic conduction are dominated by the surface states for a semiconducting case, which can be analyzed by the Hikami-Larkin-Nagaoka model for two coupled surfaces in the case of strong spin-orbit interaction. However, in the metallic-like case this analysis fails and additional two-dimensional contributions need to be accounted for. Shubnikov-de Haas oscillations and quantized Hall resistance prove as strong indications for the two-dimensional layered metallic behavior. Temperature-dependent magnetotransport properties of high-quality Bi$_2$Se$_3$ single crystalline exfoliated macro and micro flakes are combined with high resolution transmission electron microscopy and energy-dispersive x-ray spectroscopy, confirming the structure and stoichiometry. Angle-resolved photoemission spectroscopy proves a single-Dirac-cone surface state and a well-defined bulk band gap in topological insulating state. Spatially resolved core-level photoelectron microscopy demonstrates the surface stability.

cond-mat.mtrl-sci

Local electrical control of magnetic order and orientation by ferroelastic domain arrangements just above room temperature

Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical control of macroscopic magnetic properties including magnetization and coercive field. Here we show that ferroelastic domains can be used to control both magnetic order and magnetization direction at the nanoscale with a voltage. We use element-specific x-ray imaging to map the magnetic domains as a function of temperature and voltage in epitaxial FeRh on ferroelastic BaTiO3. Exploiting the nanoscale phase-separation of FeRh, we locally interconvert between ferromagnetism and antiferromagnetism with a small electric field just above room temperature. Our results emphasize the importance of nanoscale ferroic domain structure to achieve enhanced coupling in artificial multiferroics.

cond-mat.mes-hall

Observation of a valence transition in (Pr,Ca)CoO3 cobaltites: charge migration at the metal-insulator transition

X-ray absorption spectroscopy measurements in Pr0.5Ca0.5CoO3 and (Pr,Y)0.55Ca0.45CoO3 compositions reveal that the valence of praseodymium ions is stable and essentially +3 (Pr [4f 2]) in the metallic state, but abruptly changes when carriers localize approaching the oxidation state +4 (Pr [4f 1]). This mechanism appears to be the driving force of the metal-insulator transition. The ground insulating state of Pr0.5Ca0.5CoO3 is an homogeneous Co3.5-d state stabilized by a charge transfer from Pr to Co sites: 1/2Pr3+ + Co3.5 \to 1/2Pr3+2d + Co3.5-d, with 2d \approx 0.26 e-.

cond-mat.mtrl-sci