arXiv subjects

Seung-Cheol Lee

Publications and source records attributed to Seung-Cheol Lee.

At least 55 records · Page 3Linked to original sources

arXiv2022

Silicene for flexible electronics

The outstanding properties of graphene have laid the foundation for exploring graphene-like two-dimensional systems, commonly referred to as 2D-Xenes. Amongst them, silicene is a front-runner owing to its compatibility with current silicon fabrication technologies. Recent works on silicene have unveiled its useful electronic and mechanical properties. The rapid miniaturization of silicon devices and the useful electro-mechanical properties of silicene necessitates the exploration for potential applications of silicene flexible electronics in the nano electro-mechanical systems. Using a theoretical model derived from the integration of \textit{ab-initio} density-functional theory and quantum transport theory, we investigate the piezoresistance effect of silicene in the nanoscale regime. Like graphene, we obtain a small value of piezoresistance gauge factor of silicene, which is sinusoidally dependent on the transport angle. The small gauge factor of silicene is attributed to its robust Dirac cone and strain-independent valley degeneracy. Based on the obtained results, we propose to use silicene as an interconnect in flexible electronic devices and a reference piezoresistor in strain sensors. This work will hence pave the way for exploring flexible electronics applications in other 2D-Xene materials.

cond-mat.mes-hall↗

arXiv2022

CrysXPP:An Explainable Property Predictor for Crystalline Materials

We present a deep-learning framework, CrysXPP, to allow rapid prediction of electronic, magnetic and elastic properties of a wide range of materials with reasonable precision. Although our work is consistent with several recent attempts to build deep learning-based property predictors, it overcomes some of their limitations. CrysXPP lowers the need for a large volume of tagged data to train a deep learning model by intelligently designing an autoencoder CrysAE and passing the structural information to the property prediction process. The autoencoder in turn is trained on a huge volume of untagged crystal graphs, the designed loss function helps in capturing all their important structural and chemical information. Moreover, CrysXPP uses only a small amount of tagged data for property prediction, and also trains a feature selector that provides interpretability to the results obtained. We demonstrate that CrysXPP convincingly performs better than all the competing and recent baseline algorithms across seven diverse set of properties. Most notably, when given a small amount of experimental data, CrysXPP is consistently able to outperform conventional DFT. We release the large pretrained model CrysAE so that it could be fine-tuned using small amount of tagged data by the research community on various applications with restricted data source.

cond-mat.mtrl-sci↗

arXiv2022

Atomic disorder and Berry phase driven anomalous Hall effect in Co2FeAl Heusler compound

Co2-based Heusler compounds are the promising materials for the spintronics application due to their high Curie temperature, large spin-polarization, large magnetization density, and exotic transport properties. In the present manuscript, we report the anomalous Hall effect (AHE) in a polycrystalline Co2FeAl Heusler compound using combined experimental and theoretical studies. The Rietveld analysis of high-resolution synchrotron x-ray diffraction data reveals a large degree (~50 %) of antisite disorder between Fe and Al atoms. The analysis of anomalous transport data provides the experimental anomalous Hall conductivity (AHC) about 227 S/cm at 2 K with an intrinsic contribution of 155 S/cm, which has nearly constant variation with temperature. The detailed scaling analysis of anomalous Hall resistivity suggests that the AHE in Co2FeAl is governed by the Berry phase driven intrinsic mechanism. Our theoretical calculations reveal that the disorder present in Co2FeAl compound enhances the Berry curvature induced intrinsic AHC.

cond-mat.mtrl-sci↗

arXiv2021

Identifying the critical surface descriptors responsible for the appearance of negative slopes in the adsorption energy scaling relationships

Adsorption energy scaling relationships have now developed beyond their original form, which was more targeted towards the optimization of catalytic sites and the reduction of computational costs in simulations. The recent surge of interest in the adsorption energy scaling relations is to explore the surfaces beyond the transition metals (TMs) as well as reactions involving complicated molecules. Breakdown of such scaling relationships leads to motivating the discovery of novel catalysts with enhanced capabilities. In this work, we report our extensive study on the linear scaling relation (LSR) between oxygen (O), a group VIA element with elements of neighbouring groups such as: Group IIIA (Boron (B), Aluminum (Al)), IVA (Carbon (C), Silicon (Si)), VA (Nitrogen(N),phosphorus(P)) and VIIA (Florine(F)) on magnetic bimetallic surfaces. We found that the slope is positive for only O versus N and F, remaining of the slopes are negative. The present model is based on multiple surface descriptors, particularly spin-averaged d-band center and the surface's magnetic moment, whereas the original scaling theory (Phys. Rev. Lett. 99, 016105 (2007)) was based on a single adsorbate descriptor: adsorbate valency.

cond-mat.mtrl-sci↗

arXiv2021

Probing Photo-excited Charge Carrier Trapping and Defect Formation in Synergistic Doping of SrTiO3

Strontium titanate (SrTiO3) is widely used as a promising photocatalyst due to its unique band edge alignment with respect to the oxidation and reduction potential corresponding to oxygen evolution reaction (OER) and hydrogen evolution reaction (HER). However, further enhancement of the photocatalytic activity in this material could be envisaged through the effective control of oxygen vacancy states. This could substantially tune the photoexcited charge carrier trapping under the influence of elemental functionalization in SrTiO3, corresponding to the defect formation energy. The charge trapping states in SrTiO3 decrease through the substitutional doping in Ti sites with p-block elements like Aluminium (Al) with respect to the relative oxygen vacancies. With the help of electronic structure calculations based on density functional theory (DFT) formalism, we have explored the synergistic effect of doping with both Al and Iridium (Ir) in SrTiO3 from the perspective of defect formation energy, band edge alignment and the corresponding charge carrier recombination probability to probe the photoexcited charge carrier trapping that primarily governs the photocatalytic water splitting process. We have also systematically investigated the ratio-effect of Ir:Al functionalization on the position of acceptor levels lying between Fermi and conduction band in oxygen deficient SrTiO3, which governs the charge carrier recombination and therefore the corresponding photocatalytic efficiency.

cond-mat.mtrl-sci↗

arXiv2021

MatScIE: An automated tool for the generation of databases of methods and parameters used in the computational materials science literature

The number of published articles in the field of materials science is growing rapidly every year. This comparatively unstructured data source, which contains a large amount of information, has a restriction on its re-usability, as the information needed to carry out further calculations using the data in it must be extracted manually. It is very important to obtain valid and contextually correct information from the online (offline) data, as it can be useful not only to generate inputs for further calculations, but also to incorporate them into a querying framework. Retaining this context as a priority, we have developed an automated tool, MatScIE (Material Scince Information Extractor) that can extract relevant information from material science literature and make a structured database that is much easier to use for material simulations. Specifically, we extract the material details, methods, code, parameters, and structure from the various research articles. Finally, we created a web application where users can upload published articles and view/download the information obtained from this tool and can create their own databases for their personal uses.

cs.CL↗

arXiv2021

Cooperation and competition between magnetism and chemisorption

Chemisorption on ferromagnetic and non-magnetic surfaces is discussed within the Newns-Anderson-Grimley model along with the Stoner model of ferromagnetism. In the case of ferromagnetic surfaces, the adsorption energy is formulated in terms of the change in surface magnetic moments. Using such a formulation, we address the issue of how an adsorbate's binding strength depends on the magnetic moments of the surface and how the adsorption process reduces/enhances the magnetic moments of the surface. Our results indicates a possible adsorption energy scaling relationship in terms surface magnetic moments. In the case of non-magnetic surfaces, we formulate a modified stoner criterion and discuss the condition for the appearance of magnetism due to chemisorption on an otherwise non-magnetic surface.

cond-mat.mtrl-sci↗

arXiv2020

Influence of surface structure and strain on indium segregation in InGaAs: a first-principles investigation

The surface segregation of indium atoms in InGaAs is investigated using first-principles calculations based on density functional theory. Through the calculation of segregation energies for (100), (110), and (111) surfaces of GaAs we analyze the decisive role of surface orientation on indium segregation. Further, our calculations reveal that the variation of segregation energy as a function of applied strain strongly depends on surface reconstruction. Obtained segregation energy trends are discussed in light of atomic bonding probed via integrated crystal orbital Hamilton population. Results presented in this paper are anticipated to guide experimental efforts to achieve control on In segregation by managing As-flux along with the application of strain.

cond-mat.mtrl-sci↗

arXiv2020

Population Analysis with Wannier Orbitals

We formulate Wannier orbital overlap population and Wannier orbital Hamilton population to describe the contribution of different orbitals to electron distribution and their interactions. These methods, which are analogous to the well known crystal orbital overlap population and crystal orbital Hamilton population, provide insight into the distribution of electrons at various atom centres and their bonding nature. We apply this formalism in the context of a plane-wave density functional theory calculation. This method provides a means to connect the non-local plane-wave basis to a localised basis by projecting the wave functions from a plane-wave density functional theory calculation on to localized Wannier orbital basis. The main advantage of this formulation is that the spilling factor is strictly zero for insulators and can systematically be made small for metals. We use our proposed method to study and obtain bonding and electron localization insights in five different materials.

physics.comp-ph↗

arXiv2020

Tuning the lattice thermal conductivity in Bismuth Telluride through Cr-doping

Decreasing thermal conductivity of a thermoelectric material is always a prerequisite for its potential application. Using first-principle calculations, we examine the magnetism induced change in lattice thermal transport in bismuth telluride. The source of magnetic moment, Cr in the doped system, weakly magnetizes the coordinated Te atoms to make the latter's phonon softer than that in the pure compound. Though the transition metal dopants do not participate directly in the heat conduction process, the anharmonicity induced by them favor in reducing the lattice thermal conductivity. Large anharmonicity in $(Bi_{0.67}Cr_{0.33})_2Te_3$ reduces the in-plane room temperature lattice thermal conductivity by $\sim 79\%$. The thermal conductivity, strictly, does not vary monotonically with doping concentration. Even, for any particular doping level, the thermal conductivity is different for different configurations which is related to the internal energy of the system. We found that the internal energy variance of 0.03 $eV$ would reduce the in-plane thermal conductivity of the room temperature lattice by at least 60$\%$ for 50$\%$ doping.

cond-mat.mtrl-sci↗

arXiv2020

AMMCR: Ab-initio model for mobility and conductivity calculation by using Rode Algorithm

We present a module to calculate the mobility and conductivity of semi-conducting materials using Rode's algorithm. This module uses a variety of electronic structure inputs derived from the Density Functional Theory (DFT). We have demonstrated good agreement with experimental results for the case of Cadmium Sulfide (CdS). We also provide a comparison with the widely used method, the so called Relaxation Time Approximation (RTA) and demonstrated the improvisation of the results compared to RTA. The present version of the module is interfaced with Vienna ab-initio simulation package (VASP).

cond-mat.mtrl-sci↗

arXiv2019

Scaling relation for the adsorption energies at bimetallic magnetic surfaces: Role of surface magnetic moment and work-function

The scaling relationships between the adsorption energies of different reaction intermediates have a tremendous effect in the field of surface science, particularly in predicting new catalytic materials. In the last few decades, these scaling laws have been extensively studied and interpreted by a number of research groups which makes them almost universally accepted. In this work, we report the breakdown of the standard scaling law in bimetallic transition metal (TM) magnetic surfaces for O and OH adsorbates, where adsorption energies are estimated using density functional theory (DFT).We propose that the scaling relationships do not necessarily rely solely on the adsorbates, they can also be strongly dependent on the surface properties.

cond-mat.mtrl-sci↗

arXiv2019

Gallium-Boron-Phosphide (GaBP$_2$): A New III-V Semiconductor for photovoltaics

Using machine learning (ML) approach, we unearthed a new III-V semiconducting material having an optimal bandgap for high efficient photovoltaics with the chemical composition of Gallium-Boron-Phosphide(GaBP$_2$, space group: Pna2$_1$). ML predictions are further validated by state of the art ab-initio density functional theory (DFT) simulations. The stoichiometric Heyd-Scuseria-Ernzerhof (HSE) bandgap of GaBP$_2$ is noted to 1.65 eV, a close ideal value (1.4-1.5 eV) to reach the theoretical Queisser-Shockley limit. The calculated electron mobility is similar to that of silicon. Unlike perovskites, the newly discovered material is thermally, dynamically and mechanically stable. Above all the chemical composition of GaBP$_2$ are non-toxic and relatively earth-abundant, making it a new generation of PV material. Using ML, we show that with a minimal set of features the bandgap of III-III-V and II-IV-V semiconductor can be predicted up to an RMSE of less than 0.4 eV. We presented a set of scaling laws, which can be used to estimate the bandgap of new III-III-V and II-IV-V semiconductor, with three different crystal phases, within an RMSE of approx. 0.5 eV.

physics.app-ph↗

arXiv2019

Ab-initio semi-classical electronic transport in ZnSe: The role of inelastic scattering mechanisms

We present a detailed ab-initio study of semi-classical transport in n-ZnSe using Rode's iterative method. Inclusion of ionized impurity, piezoelectric, acoustic deformation and polar optical phonon scattering and their relative importance at low and room temperature for various n-ZnSe samples are discussed in depth. We have clearly noted that inelastic polar optical phonon scattering is the most dominant scattering mechanism over most of the temperature region. Our results are in good agreement with the experimental data for the mobility and conductivity obtained at different doping concentrations over a wider range of temperatures. Also we compare these results with the ones obtained with relaxation time approximation (RTA) which clearly demonstrate the superiority of the iterative method over RTA.

cond-mat.mtrl-sci↗

arXiv2019

Inducing half metallicity with alloying in Heusler Compound CoFeMnSb

First principles studies were performed in order to find out the possibility of inducing half-metallicity in Heusler Compound CoFeMnSb, by means of alloying it with 3d-transition metal elements. Proper alloying element is selected through the calculations of formation energies. These calculations were tested with different concentrations of alloying elements at different atomic sites. Among the selected transition metal elements Sc and Ti are proposed to be excellent alloying elements particularly at Mn site. By using these alloying elements complete half metallic behaviour is obtained in CoFeMn0.25Sc0.75Sb, CoFeMn0.75Ti0.25Sb, CoFeMn0.625Ti0.375Sb, CoFeMn0.50Ti0.50Sb, CoFeMn0.25Ti0.75Sb and CoFeTiSb alloys. Shifting of Co-Fe d-states towards lower energy region leads to zero density of states at Fermi level for the spin minority channel. Alloying effects on the electronic structure and magnetization are discussed in details. Thermodynamical stability of these new alloys are major part of this study. The Curie temperatures of CoFeMn0.25Sc0.75Sb and CoFeMn0.75Ti0.25Sb were found to be 324.5 K and 682 K; respectively, showing good candidature for spintronics applications. For understanding the bonding nature of constituent atom of CoFeMnSb, crystal orbital Hamiltonian populations have been analysed.

cond-mat.mtrl-sci↗

arXiv2019

Cu-substituted Fe2P: An emerging candidates for magnetic RAM application

We propose that Cu-substituted Fe$_2$P, (Fe$_{1-x}$Cu$_x$)$_2$P ($x\sim 0.16$), to be an outstanding contender for the STT-MRAM application. Using first principles based calculations in the framework of density functional theory and through Monte Carlo simulations, we demonstrate that this material can be used as ferromagnetic electrode in the magnetic tunnel junction (MTJ) of STT-MRAM due to its moderate perpendicular magnetic anisotropy (PMA), large tunnel magneto-resistance (TMR), good thermal stability and high ferromagnetic transition temperature. We point out that the simplicity in the synthesis, huge abundance, and non-toxicity make this material a very good candidate to replace the current MTJ materials for STT-MRAM such as FePt,~FeCo or FeCoB.

cond-mat.mtrl-sci↗

arXiv2018

Uncovering the puzzle of complex magnetism in Fe16N2: a first-principles based study

The electronic structure and magnetic exchange interactions in pure and V-doped Fe16N2 are studied within the framework of density functional theory. The Curie temperatures were obtained with both mean field approximation (MFA) as well as Monte Carlo (MC) calculations. The Curie temperature (TC) for pure Fe16N2 obtained within MFA are significantly larger than the experimental value, suggesting the importance of thermal fluctuations in these systems, and has a resemblance of a lower dimensional spin system. We also briefly discuss about the various possible factors which may lead to a large magnetic moment in this material. The calculated magnetic susceptibility at zero field shows sharp peak at T=TC which resemble a local moment system. From the nature of exchange interactions we try to figure out the nature of the Fesites which might contain localized d-states. Finally, we point out that Fe16N2 can also act as a good spin injector for the III-V semiconductors in addition to its well promised application as permanent magnet since it has a very high spin polarization (larger compared to elemental ferromagnets) as well as quite smaller lattice mismatch (compared to half-metallic Heusler alloys) with the conventional III-V semiconductors such as GaAs or InGaAs. We further demonstrate this through our calculations for Fe16N2(001)/InGaAs(001) heterostructures which shows the non-negligible spin polarization in the semiconductor (InGaAs) region implying a long spin diffusion length.

cond-mat.mtrl-sci↗

arXiv2018

PASTA: Python Algorithms for Searching Transition stAtes

Chemical reactions are often associated with an energy barrier along the reaction pathway which hinders the spontaneity of the reaction. Changing the energy barrier along the reaction pathway allows one to modulate the performance of a reaction. We present a module, Python Algorithms for Searching Transition stAtes (PASTA), to calculate the energy barrier and locate the transition state of a reaction efficiently. The module is written in python and can perform nudged elastic band, climbing image nudged elastic band and automated nudged elastic band calculations. These methods require the knowledge of the potential energy surface (and its gradient along some direction). This module is written such that it works in conjunction with density functional theory (DFT) codes to obtain this information. Presently it is interfaced with three well known DFT packages: Vienna Ab initio Simulation Package (VASP), Quantum Espresso and Spanish Initiative for Electronic Simulations with Thousands of Atoms (SIESTA). This module is easily extendable and can be interfaced with other DFT, force-field or empirical potential based codes. The uniqueness of the module lies in its user-friendliness. For users with limited computing resources, this module will be an effective tool as it allows to perform the calculations image by image. On the other hand, users with plentiful computing resources (such as users in a high performance computing environment) can perform the calculations for large number of images simultaneously. This module gives users complete flexibility, thereby enabling them to perform calculations on large systems making the best use of the available resources.

physics.comp-ph↗