arXiv subjects

Shanshan Liu

Publications and source records attributed to Shanshan Liu.

41 records · Page 3Linked to original sources

arXiv2019

Neural Machine Reading Comprehension: Methods and Trends

Machine reading comprehension (MRC), which requires a machine to answer questions based on a given context, has attracted increasing attention with the incorporation of various deep-learning techniques over the past few years. Although research on MRC based on deep learning is flourishing, there remains a lack of a comprehensive survey summarizing existing approaches and recent trends, which motivated the work presented in this article. Specifically, we give a thorough review of this research field, covering different aspects including (1) typical MRC tasks: their definitions, differences, and representative datasets; (2) the general architecture of neural MRC: the main modules and prevalent approaches to each; and (3) new trends: some emerging areas in neural MRC as well as the corresponding challenges. Finally, considering what has been achieved so far, the survey also envisages what the future may hold by discussing the open issues left to be addressed.

cs.CL↗

arXiv2019

Representations and cohomologies of Hom-pre-Lie algebras

In this paper, first we study dual representations and tensor representations of Hom-pre-Lie algebras. Then we develop the cohomology theory of Hom-pre-Lie algebras in term of the cohomology theory of Hom-Lie algebras. As applications, we study linear deformations of Hom-pre-Lie algebras, which are characterized by the second cohomology groups of Hom-pre-Lie algebras with the coefficients in the regular representation. The notion of a Nijenhuis operator on a Hom-pre-Lie algebra is introduced which can generate trivial linear deformations of a Hom-pre-Lie algebra. Finally, we introduce the notion of a Hessian structure on a Hom-pre- Lie algebra, which is a symmetric nondegenerate 2-cocycle with the coefficient in the trivial representation. We also introduce the notion of an $\huaO$-operator on a Hom-pre-Lie algebra, by which we give an equivalent characterization of a Hessian structure.

math.RA↗

arXiv2017

Evolution of Weyl orbit and quantum Hall effect in Dirac semimetal Cd3As2

Owing to the coupling between open Fermi arcs on opposite surfaces, topological Dirac semimetals exhibit a new type of cyclotron orbit in the surface states known as Weyl orbit. Here, by lowering the carrier density in Cd3As2 nanoplates, we observe a crossover from multiple- to single-frequency Shubnikov-de Haas (SdH) oscillations when subjected to out-of-plane magnetic field, indicating the dominant role of surface transport. With the increase of magnetic field, the SdH oscillations further develop into quantum Hall state with non-vanishing longitudinal resistance. By tracking the oscillation frequency and Hall plateau, we observe a Zeeman-related splitting and extract the Landau level index as well as sub-band number. Different from conventional two-dimensional systems, this unique quantum Hall effect may be related to the quantized version of Weyl orbits. Our results call for further investigations into the exotic quantum Hall states in the low-dimensional structure of topological semimetals.

cond-mat.mtrl-sci↗

arXiv2016

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a relatively high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 us. Importantly, the device shows no sign of degradation after 1 million cycles of operation. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

cond-mat.mes-hall↗

arXiv2015

ReS2-based field-effect transistors and photodetectors

Atomically-thin two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, we report on the fabrication of ReS2 field-effect transistors via the encapsulation of ReS2 nanosheets in a high-\k{appa} Al2O3 dielectric environment. Low-temperature transport measurements allowed us to observe a direct metal-to-insulator transition originating from strong electron-electron interactions. Remarkably, the photodetectors based on ReS2 exhibit gate-tunable photoresponsivity up to 16.14 A/W and external quantum efficiency reaching 3,168 %, showing a competitive device performance to those reported in graphene, MoSe2, GaS and GaSe-based photodetectors. Our study unambiguously distinguishes ReS2 as a new candidate for future applications in electronics and optoelectronics.

cond-mat.mtrl-sci↗