arXiv subjects

Shao-Chun Li

Publications and source records attributed to Shao-Chun Li.

At least 19 recordsLinked to original sources

arXiv2025

Ripple-assisted adsorption of noble gases on graphene at room temperature

Controllable gas adsorption is critical for both scientific and industrial fields, and high-capacity adsorption of gases on solid surfaces provides a significant promise due to its high-safety and low-energy consumption. However, the adsorption of nonpolar gases, particularly noble gases, poses a considerable challenge under atmospheric pressure and room temperature (RT). Here, we theoretically simulate and experimentally realize the stable adsorption of noble gases like xenon (Xe), krypton (Kr), argon (Ar), and helium (He) on highly rippled graphene at RT. The elemental characteristics of adsorbed Xe are confirmed by electron energy loss spectroscopy and X-ray photoelectron spectroscopy. The adsorbed gas atoms are crystalized with periodic arrangements. These adsorbed noble gases on graphene exhibit high stability at RT and can be completely desorbed at approximately 350 °C without damaging the intrinsic lattice of graphene. The structural and physical properties of graphene are significantly influenced by the adsorbed gas, and they fully recover after desorption. Additionally, this controllable adsorption could be generalized to other layered adsorbents such as NbSe2, MoS2 and carbon nanotubes. We anticipate that this ripple-assisted adsorption will not only re-define the theoretical framework of gas adsorption, but also accelerate advancements in gas storage and separation technologies, as well as enhance the applications in catalysis, surface modification, and other related fields.

cond-mat.mtrl-sci↗

arXiv2023

Checkerboard order state in superconducting FeSe/SrTiO3(001) monolayer

Ordered electronic states have been extensively explored in cuprates and iron-based unconventional superconductors, but seldom observed in the epitaxial FeSe/SrTiO3(001) monolayer (FeSe/STO) with an enhanced superconducting transition temperature (Tc). Here, by using scanning tunneling microscopy/ spectroscopy (STM/STS), we reveal a checkerboard charge order in the epitaxial FeSe/STO monolayer, with a period of four times the inter-Fe-atom distance along two perpendicular directions of the Fe lattice. This ordered state is uniquely present in the superconducting FeSe/STO monolayer, even at liquid nitrogen temperature, but absent in the non-superconducting FeSe monolayer or bilayer. Quasiparticle interference (QPI) measurements further confirm it as a static order without an energy-dependent dispersion and gapped out within the superconductivity gap. The intensity of the charge order shows an enhancement near the superconducting transition temperature, thus implying a correlation with the high-Tc superconductivity in the FeSe/STO monolayer. This study provides a new basis for exploring the ordered electronic states and their interplay with high-Tc superconductivity in the FeSe monolayer.

cond-mat.supr-con↗

arXiv2020

Kinetics-Limited Two-Step Growth of van der Waals Puckered Honeycomb Sb Monolayer

Puckered honeycomb Sb monolayer, the structural analog of black phosphorene, has been recently successfully grown by means of molecular beam epitaxy. However, little is known to date about the growth mechanism for such puckered honeycomb monolayer. In this study, by using scanning tunneling microscopy in combination with first-principles density functional theory calculations, we unveil that the puckered honeycomb Sb monolayer takes a kinetics-limited two-step growth mode. As the coverage of Sb increases, the Sb atoms firstly form the distorted hexagonal lattice as the half layer, and then the distorted hexagonal half-layer transforms into the puckered honeycomb lattice as the full layer. These results provide the atomic-scale insight in understanding the growth mechanism of puckered honeycomb monolayer, and can be instructive to the direct growth of other monolayers with the same structure.

cond-mat.mtrl-sci↗

arXiv2020

Tuning the electronic structure of α-antimonene monolayer through interface engineering

The interfacial charge transfer from the substrate may influence the electronic structure of the epitaxial van der Waals (vdW) monolayers and thus their further technological applications. For instance, the freestanding Sb monolayer in puckered honeycomb phase (α-antimonene), the structural analog of black phosphorene, was predicted to be a semiconductor, but the epitaxial one behaves as a gapless semimetal when grown on the Td-WTe2 substrate. Here, we demonstrate that interface engineering can be applied to tune the interfacial charge transfer and thus the electron band of epitaxial monolayer. As a result, the nearly freestanding (semiconducting) α-antimonene monolayer with a band gap of ~170 meV was successfully obtained on the SnSe substrate. Furthermore, a semiconductor-semimetal crossover is observed in the bilayer α-antimonene. This study paves the way towards modifying the electron structure in two-dimensional vdW materials through interface engineering.

cond-mat.mtrl-sci↗

arXiv2020

Ferromagnetic MnSn monolayer epitaxially grown on silicon substrate

Two-dimensional (2D) ferromagnetic materials have been exhibiting promising potential in applications, such as spintronics devices. To grow epitaxial magnetic films on silicon substrate, in the single-layer limit, is practically important but challenging. In this study, we realized the epitaxial growth of MnSn monolayer on Si(111) substrate, with an atomically thin Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$- buffer layer, and controlled the MnSn thickness with atomic-layer precision. We discovered the ferromagnetism in MnSn monolayer with the Curie temperature (Tc) of ~54 K. As the MnSn film is grown to 4 monolayers, Tc increases accordingly to ~235 K. The lattice of the epitaxial MnSn monolayer as well as the Sn/Si(111)-$2\sqrt{3}\times2\sqrt{3}$ is perfectly compatible with silicon, and thus an sharp interface is formed between MnSn, Sn and Si. This system provides a new platform for exploring the 2D ferromagnetism, integrating magnetic monolayers into silicon-based technology, and engineering the spintronics heterostructures.

cond-mat.mtrl-sci↗

arXiv2020

Quasiparticle Interference Evidence of the Topological Fermi Arc States in Chiral Fermionic Semimetal CoSi

Chiral fermions in solid state feature "Fermi arc" states, connecting the surface projections of the bulk chiral nodes. The surface Fermi arc is a signature of nontrivial bulk topology. Unconventional chiral fermions with an extensive Fermi arc traversing the whole Brillouin zone have been theoretically proposed in CoSi. Here, we use scanning tunneling microscopy / spectroscopy to investigate quasiparticle interference at various terminations of a CoSi single crystal. The observed surface states exhibit chiral fermion-originated characteristics. These reside on (001) and (011) but not (111) surfaces with pi-rotation symmetry, spiral with energy, and disperse in a wide energy range from ~-200 to ~+400 mV. Owing to the high-energy and high-space resolution, a spin-orbit coupling-induced splitting of up to ~80 mV is identified. Our observations are corroborated by density functional theory and provide strong evidence that CoSi hosts the unconventional chiral fermions and the extensive Fermi arc states.

cond-mat.mtrl-sci↗

arXiv2019

Realization of metallic state in 1T-TaS2 with persisting long-range order of charge density wave

Metallization of 1T-TaS2 is generally initiated at the domain boundary of charge density wave (CDW), at the expense of its long-range order. However, we demonstrate in this study that the metallization of 1T-TaS2 can be also realized without breaking the long-range CDW order upon surface alkali doping. By using scanning tunneling microscopy, we find the long-range CDW order is always persisting, and the metallization is instead associated with additional in-gap excitations. Interestingly, the in-gap excitation is near the top of the lower Hubbard band, in contrast to a conventional electron-doped Mott insulator where it is beneath the upper Hubbard band. In combination with the numerical calculations, we suggest that the appearance of the in-gap excitations near the lower Hubbard band is mainly due to the effectively reduced on-site Coulomb energy by the adsorbed alkali ions.

cond-mat.str-el↗

arXiv2019

Van der Waals heteroepitaxial growth of monolayer Sb in puckered honeycomb structure

Atomically thin two-dimensional (2D) crystals have gained tremendous attentions owing to their potential impacts to the future electronics technologies, as well as the exotic phenomena emerging in these materials. Monolayer of α phase Sb (α-antimonene) that shares the same puckered structure as black phosphorous, has been predicted to be stable with precious properties. However, the experimental realization still remains challenging. Here, we successfully grow high-quality monolayer α-antimonene, with the thickness finely controlled. The α-antimonene exhibits great stability upon exposure to air. Combining scanning tunneling microscope, density functional theory calculations and transport measurement, it is found that the electron band crossing the Fermi level exhibits a linear dispersion with a fairly small effective mass, and thus a good electrical conductivity. All of these properties make the α-antimonene promising in the future electronic applications.

cond-mat.mtrl-sci↗

arXiv2019

Turning ZrTe5 into semiconductor through atomic intercalation

In this work, we use the liquid ammonia method to successfully intercalate potassium atoms into ZrTe5 single crystal, and find a transition from semimetal to semiconductor at low temperature in the intercalated ZrTe5. The resistance anomalous peak is gradually suppressed and finally disappears with increasing potassium concentration. Whilst, the according sign reversal is always observed in the Hall resistance measurement. We tentatively attribute the semimetal-semiconductor transition to the lattice expansion induced by atomic intercalation and thereby a larger energy band gap.

cond-mat.mtrl-sci↗

arXiv2019

Superconductivity in Potassium-intercalated Td-WTe2

To realize topological superconductor is one of the most attracting topics because of its great potential in quantum computation. In this study, we successfully intercalate potassium (K) into the van der Waals gap of type II Weyl semimetal WTe2, and discover the superconducting state in KxWTe2 through both electrical transport and scanning tunneling spectroscopy measurements. The superconductivity exhibits an evident anisotropic behavior. Moreover, we also uncover the coexistence of superconductivity and the positive magneto-resistance state. Structural analysis substantiates the negligible lattice expansion induced by the intercalation, therefore suggesting K-intercalated WTe2 still hosts the topological nontrivial state. These results indicate that the K-intercalated WTe2 may be a promising candidate to explore the topological superconductor.

cond-mat.supr-con↗

arXiv2018

Unveiling the Charge Density Wave Inhomogeneity and Pseudogap State in 1T-TiSe2

By using scanning tunneling microscopy (STM) / spectroscopy (STS), we systematically characterize the electronic structure of lightly doped 1T-TiSe2, and demonstrate the existence of the electronic inhomogeneity and the pseudogap state. It is found that the intercalation induced lattice distortion impacts the local band structure and reduce the size of the charge density wave (CDW) gap with the persisted 2x2 spatial modulation. On the other hand, the delocalized doping electrons promote the formation of pseudogap. Domination by either of the two effects results in the separation of two characteristic regions in real space, exhibiting rather different electronic structures. Further doping electrons to the surface confirms that the pseudogap may be the precursor for the superconducting gap. This study suggests that the competition of local lattice distortion and the delocalized doping effect contribute to the complicated relationship between charge density wave and superconductivity for intercalated 1T-TiSe2.

cond-mat.str-el↗

arXiv2017

Observation of Coulomb gap in the quantum spin Hall candidate single-layer 1T'-WTe$_2$

The two-dimensional topological insulators (2DTI) host a full gap in the bulk band, induced by spin-orbit coupling (SOC) effect, together with the topologically protected gapless edge states. However, the SOC-induced gap is usually small, and it is challenging to suppress the bulk conductance and thus to realize the quantum spin Hall (QSH) effect. In this study, we find a novel mechanism to effectively suppress the bulk conductance. By using the quasiparticle interference (QPI) technique with scanning tunneling spectroscopy (STS), we demonstrate that the QSH candidate single-layer 1T'-WTe$_2$ has a semi-metal bulk band structure with no full SOC-induced gap. Surprisingly, in this two-dimensional system, we find the electron interactions open a Coulomb gap which is always pinned at the Fermi energy (E$_F$). The opening of the Coulomb gap can efficiently diminish the bulk state at the E$_F$ and is in favor of the observation of the quantized conduction of topological edge states.

cond-mat.mes-hall↗

arXiv2017

High-buckled R3 stanene with topologically nontrivial energy gap

Stanene has been predicted to be a two-dimensional topological insulator (2DTI). Its low-buckled atomic geometry and the enhanced spin-orbit coupling are expected to cause a prominent quantum spin hall (QSH) effect. However, most of the experimentally grown stanene to date displays a metallic state without a real gap, possibly due to the chemical coupling with the substrate and the stress applied by the substrate. Here,we demonstrate an efficient way of tuning the atomic buckling in stanene to open a topologically nontrivial energy gap. Via tuning the growth kinetics, we obtain not only the low-buckled 1x1 stanene but also an unexpected high-buckled R3xR3 stanene on the Bi(111) substrate. Scanning tunneling microscopy (STM) study combined with density functional theory (DFT) calculation confirms that the R3xR3 stanene is a distorted 1x1 structure with a high-buckled Sn in every three 1x1 unit cells. The high-buckled R3xR3 stanene favors a large band inversion at the Γ point, and the spin orbital coupling open a topologically nontrivial energy gap. The existence of edge states as verified in both STM measurement and DFT calculation further confirms the topology of the R3xR3 stanene. This study provides an alternate way to tune the topology of monolayer 2DTI materials.

cond-mat.mtrl-sci↗

arXiv2017

Direct Visualization of 2D Topological Insulator in Single-layer 1T'-WTe2

We grow nearly freestanding single-layer 1T'-WTe2 on graphitized 6H-SiC(0001) by using molecular beam epitaxy (MBE), and characterize its electronic structure with scanning tunneling microscopy / spectroscopy (STM/STS). We demonstrate the existence of topological edge states at the periphery of single-layer WTe2 islands. Surprisingly, we also find a band gap in the bulk and the semiconducting behaviors of the single-layer WTe2 at low temperature, which is likely resulted from an incommensurate charge density wave (CDW) transition. The realization of two-dimensional topological insulators (2D TIs) in single-layer transition metal dichalcogenide (TMD) thus provides a promising platform for further exploration of the 2D TIs' physics and related applications.

cond-mat.mtrl-sci↗

arXiv2017

Aggregation of BiTe Monolayer on Bi$_2$Te$_3$(111) Induced by Diffusion of Intercalated Atoms in van der Waals Gap

We report a post-growth aging mechanism of Bi$_2$Te$_3$(111) films with scanning tunneling microscopy in combination with density functional theory calculation. It is found that a monolayered structure with a squared lattice symmetry gradually aggregates from surface steps. Theoretical calculations indicate that the van der Waals (vdW) gap not only acts as a natural reservoir for self-intercalated Bi and Te atoms, but also provides them easy diffusion pathways. Once hopping out of the gap, these defective atoms prefer to develop into a two dimensional BiTe superstructure on the Bi$_2$Te$_3$(111) surface driven by positive energy gain. Considering the common nature of weakly bonding between vdW layers, we expect such unusual diffusion and aggregation of the intercalated atoms may be of general importance for most kinds of vdW layered materials.

cond-mat.mtrl-sci↗

arXiv2016

Tailoring Kinetics on a Topological Insulator Surface by Defect-Induced Strain: Pb Mobility on Bi2Te3

Heteroepitaxial structures based on Bi$_{2}$Te$_{3}$-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth on such TIs. In this process, adatom mobility is a key factor. We demonstrate that Pb mobility on the Bi$_{2}$Te$_{3}$(111) surface can be modified by the engineering local strain, ε, which is induced around the point-like defects intrinsically forming in the Bi$_{2}$Te$_{3}$(111) thin film grown on a Si(111)-7 $\times$ 7 substrate. Scanning tunneling microscopy observations of Pb adatom and cluster distributions and first-principles density functional theory (DFT) analyses of the adsorption energy and diffusion barrier E$_{d}$ of Pb adatom on Bi$_{2}$Te$_{3}$(111) surface show a significant influence of ε. Surprisingly, E$_d$ reveals a cusp-like dependence on ε due to a bifurcation in the position of the stable adsorption site at the critical tensile strain ε$_{c}$ $ \approx $ 0.8%. This constitutes a very different strain-dependence of diffusivity from all previous studies focusing on conventional metal or semiconductor surfaces. Kinetic Monte Carlo simulations of Pb deposition, diffusion, and irreversible aggregation incorporating the DFT results reveal adatom and cluster distributions compatible with our experimental observations.

cond-mat.mtrl-sci↗

arXiv2016

Real-space characterization of reactivity towards water at Bi2Te3(111) surface

Surface reactivity is important in modifying the physical and chemical properties of surface sensitive materials, such as the topological insulators (TIs). Even though many studies addressing the reactivity of TIs towards external gases have been reported, it is still under heavy debate whether and how the topological insulators react with H$_2$O. Here, we employ scanning tunneling microscopy (STM) to directly probe the surface reaction of Bi$_2$Te$_3$ towards H$_2$O. Surprisingly, it is found that only the top quintuple layer is reactive to H$_2$O, resulting in a hydrated Bi bilayer as well as some Bi islands, which passivate the surface and prevent from the subsequent reaction. A reaction mechanism is proposed with H$_2$Te and hydrated Bi as the products. Unexpectedly, our study indicates the reaction with water is intrinsic and not dependent on any surface defects. Since water inevitably exists, these findings provide key information when considering the reactions of Bi$_2$Te$_3$ with residual gases or atmosphere.

cond-mat.mtrl-sci↗

arXiv2016

Observation of Majorana fermions with spin selective Andreev reflection in the vortex of topological superconductor

Majorana fermion (MF) whose antiparticle is itself has been predicted in condensed matter systems. Signatures of the MFs have been reported as zero energy modes in various systems. More definitive evidences are highly desired to verify the existence of the MF. Very recently, theory has predicted MFs to induce spin selective Andreev reflection (SSAR), a novel magnetic property which can be used to detect the MFs. Here we report the first observation of the SSAR from MFs inside vortices in Bi2Te3/NbSe2 hetero-structure, in which topological superconductivity was previously established. By using spin-polarized scanning tunneling microscopy/spectroscopy (STM/STS), we show that the zero-bias peak of the tunneling differential conductance at the vortex center is substantially higher when the tip polarization and the external magnetic field are parallel than anti-parallel to each other. Such strong spin dependence of the tunneling is absent away from the vortex center, or in a conventional superconductor. The observed spin dependent tunneling effect is a direct evidence for the SSAR from MFs, fully consistent with theoretical analyses. Our work provides definitive evidences of MFs and will stimulate the MFs research on their novel physical properties, hence a step towards their statistics and application in quantum computing.

cond-mat.supr-con↗