arXiv subjects

Shashwata Chattopadhyay

Publications and source records attributed to Shashwata Chattopadhyay.

7 recordsLinked to original sources

arXiv2026

Photo-thermoelectrics of a distributed Schottky junction system: Delineating the photo and thermal currents

Hybrid materials, consisting of diverse materials combined in various configurations, exhibit intriguing opto-electronic properties and are a focal point of research in functional materials. However, achieving precise predictability and tunability of their macroscopic properties in terms of the control parameters remains a challenge. One promising approach involves leveraging self-organization through eutectic growth and subsequent engineering via annealing to engineer niche properties. Here, the electronic properties of eutectic NiTiO$_3$-TiO$_2$ samples and their H$_2$-reduced counterpart Ni-TiO$_2$ are investigated, where the latter features high aspect ratio TiO$_2$ nanostructures decorated with nodular Ni globules. By exploiting this unique architecture and capitalizing on the nanostructuring processes alongside material properties, performance enhancement of photoactive devices is shown. Further, the competing mechanisms of photo-driven and photo-thermal-driven transport is delineated to characterize the overall photo-response of the system. The ability for self-powered functionality further showcases this approach as a promising strategy for developing efficient self-powered devices.

physics.app-ph↗

arXiv2026

Investigating Sulfur Vacancy Passivation in Monolayer MoS2 FETs via Optically Coupled Low-Frequency Electrical Noise Spectroscopy

Transition metal dichalcogenide monolayers are promising materials for electronic and photonic applications, yet the performance of chemical vapour deposition grown films is severely limited by native sulphur vacancies that introduce mid-gap trap states, degrade carrier mobility, and elevate electrical noise. Here we investigate octane thiol passivation of sulphur vacancies in monolayer MoS2 field effect transistors, combining x-ray photoelectron spectroscopy, photoluminescence, and Raman scattering with electrical transport and optically coupled low-frequency noise spectroscopy. Thiol treatment reduces the sulphur vacancy concentration from 7.5% to 5%, which increases the channel resistance 35-fold while restoring gate switching with an on/off ratio of 10^4 and improving field-effect mobility from 1 to 5 cm^2/Vs. Low frequency noise spectroscopy directly quantifies the defect suppression: the Hooge parameter drops by more than two orders of magnitude after passivation. Gate-dependent noise confirms carrier mobility fluctuation as the dominant dark noise mechanism, while optical excitation drives a crossover to carrier number fluctuation dominated noise, reflecting preferential interaction of photogenerated carriers with residual vacancy states via generation-recombination trapping, a mechanistic distinction inaccessible to gate- bias measurements alone. Density functional theory calculations corroborate these findings, showing suppression of vacancy-induced mid-gap states by more than 50% and partial restoration of the intrinsic bandgap. These results establish optically coupled low-frequency noise spectroscopy as a sensitive, low-cost, and non-destructive tool for quantifying defect passivation in TMDC-based devices.

cond-mat.mtrl-sci↗

arXiv2023

Anisotropic transport and Negative Resistance in a polycrystalline metal-semiconductor (Ni-TiO2) hybrid

We investigate anomalous electrical transport properties of a Ni-TiO2 hybrid system displaying a unique nanostructured morphology. The system undergoes an insulator to metal transition below 150 K with a low temperature metallic phase that shows negative resistance in a four-probe configuration. Temperature dependent transport measurements and numerical modelling show that the anomalies originate from the dendritic architecture of the TiO2 backbone interspersed with Ni nanoparticles that paradoxically renders this polycrystalline, heterogeneous system highly anisotropic. The study critiques inferences that may be drawn from four-probe transport measurements and offers valuable insights into modelling conductivity of anisotropic hybrid materials.

cond-mat.mtrl-sci↗

arXiv2023

Leveraging Plasmonic Hot Electrons to Quench Defect Emission in Metal -- Semiconductor Nanostructured Hybrids: Experiment and Modeling

Modeling light-matter interaction in hybrid plasmonic materials is vital to their widening relevance from optoelectronics to photocatalysis. Here, we explore photoluminescence from ZnO nanorods (ZNR) embedded with gold nanoparticles (Au NPs). A progressive increase in Au NP concentration introduces significant structural disorder and defects in the ZNRs, which paradoxically quenches defect related visible photoluminescence (PL) while intensifying the near band edge (NBE) emission. Under UV excitation, the simulated semi-classical model realizes PL from ZnO with sub-band gap defect states, eliciting visible emissions that are absorbed by Au NPs to generate a non-equilibrium hot carrier distribution. The photo-stimulated hot carriers, transferred to ZnO, substantially modify its steady-state luminescence, reducing NBE emission lifetime and altering the abundance of ionized defect states, finally reducing visible emission. The simulations show that the change in the interfacial band bending at the Au-ZnO interface under optical illumination facilitates charge transfer between the components. This work provides a general foundation to observe and model the hot carrier dynamics in hybrid plasmonic systems.

cond-mat.mtrl-sci↗

arXiv2023

Mobility enhancement in CVD-grown monolayer MoS2 via patterned substrate induced non-uniform straining

The extraordinary mechanical properties of 2D TMDCs make them ideal candidates for investigating strain-induced control of various physical properties. Here we explore the role of non-uniform strain in modulating optical, electronic and transport properties of semiconducting, chemical vapour deposited monolayer MoS2, on periodically nanostructured substrates. A combination of spatially resolved spectroscopic and electronic properties explore and quantify the differential strain distribution and carrier density on a monolayer, as it conformally drapes over the periodic nanostructures. The observed accumulation in electron density at the strained regions is supported by theoretical calculations which form the likely basis for the ensuing 60x increase in field effect mobility in strained samples. Though spatially non-uniform, the pattern induced strain is shown to be readily controlled by changing the periodicity of the nanostructures thus providing a robust yet useful macroscopic control on strain and mobility in these systems.

cond-mat.mtrl-sci↗

arXiv2021

Tailoring Infrared Absorption and Thermal Emission with Ultrathin-film Interferences in Epsilon-Near-Zero Media

Engineering nanophotonic mode dispersions in ultrathin, planar structures enables significant control over infrared perfect absorption (PA) and thermal emission characteristics. Here, using simulations, the wavelength and angular ranges over which ultrathin, low loss, epsilon-near-zero (ENZ) films on a reflecting surface most efficiently absorb and re-radiate are identified, and the design parameters that tailor the ENZ mode dispersion within these limits are investigated. While the absorption is spectrally limited to wavelengths where the refractive index ($n$) lies below unity, the angular limits are determined by the ENZ material dispersion in this range. A model of ultrathin-film interference is developed to provide physical insight into the absorption resonances in this regime, occurring well below the conventional quarter-wavelength thickness limit. Driven by non-trivial phase shifts incurred on reflection at the $n<1$ surface, these resonant interferences are shown to be universal wave phenomena in planar structures having appropriate index contrast, extending beyond ENZ materials. Selective choice of material, film thickness and loss allows fine-tailoring the mode dispersions, enabling wide variation in spectral range ($ \sim 0.1 - 1.0 μm$) and precise directional control of spectrally and angularly narrow-band PA and thermal radiation, paving the way towards efficient ENZ-based infrared optical and thermal coatings.

physics.optics↗

arXiv2021

Selective Enhancement in Phonon Scattering leads to High Thermoelectric Figure of Merit in ZnO -- Graphene Oxide Core-shell Nanohybrids

ZnO is a promising candidate as an environment friendly thermoelectric (TE) material. However, the poor TE figure of merit (zT) needs to be addressed to achieve significant TE efficiency for commercial applications. Here we demonstrate that selective enhancement in phonon scattering leads to increase in zT of RGO encapsulated Al-doped ZnO core shell nanohybrids, synthesized via a facile and scalable method. The incorporation of 1 at% Al with 1.5 wt% RGO into ZnO (AGZO) has been found to show significant enhancement in zT (=0.52 at 1100 K) which is an order of magnitude larger compared to that of bare undoped ZnO. Photoluminescence and X-ray photoelectron spectroscopy measurements confirm that RGO encapsulation significantly quenches surface oxygen vacancies in ZnO along with nucleation of new interstitial Zn donor states. Tunneling spectroscopy reveals that the band gap of ~ 3.4 eV for bare ZnO reduces effectively to ~ 0.5 eV upon RGO encapsulation, facilitating charge transport. The electrical conductivity enhancement also benefits from the more than 95% densification achieved, using the spark plasma sintering method, which aids reduction of GO into RGO. The same Al doping and RGO capping synergistically brings about drastic reduction of thermal conductivity, through enhanced phonon-phonon and point defect-phonon scatterings. These opposing effects on electrical and thermal conductivities enhances the power factors as well as the zT value. Overall, a practically viable route for synthesis of oxide - RGO TE material which could find its practical applications for the high-temperature TE power generation.

cond-mat.mtrl-sci↗