arXiv subjects

Shengbai Zhang

Publications and source records attributed to Shengbai Zhang.

At least 55 records · Page 3Linked to original sources

arXiv2018

Nexus networks in carbon honeycombs

Nexus metals represent a new type of topological material in which nodal lines merge at nexus points. Here, we propose novel networks in nexus systems through intertwining between nexus fermions and additional nodal lines. These nexus networks can be realized in several recently synthesized carbon honeycomb materials. In these carbon honeycombs, we demonstrate a phase transition between a nexus network and a system with triply-degenerate points and additional nodal lines. The Landau level spectra show unusual magnetic transport properties in the nexus networks. Our results pave the way toward realizations of new topological materials with novel transport properties beyond standard Weyl/Dirac semimetals.

cond-mat.mtrl-sci↗

arXiv2018

Long Range Magnetic order stabilized by acceptors

Tuning magnetic order in magnetic semiconductors is a long sought goal. A proper concentration of acceptors can dramatically suppress local magnetic order in favor of the long one. Using Mn and an acceptor codoped LiZnAs as an example, we demonstrate, by first-principles calculation, the emergence of a long-range magnetic order. This intriguing phenomenon can be understood from an interplay between an acceptor-free magnetism and a band coupling magnetism. Our observation thus lays the ground for a precise control of the magnetic order in future spintronic devices.

cond-mat.mtrl-sci↗

arXiv2018

Quantum oscillation in carrier transport in two-dimensional junctions

Two-dimensional (2D) device structures have recently attracted considerable attention. Here, we show that most 2D device structures, regardless vertical or lateral, act as a lateral monolayer-bilayer-monolayer junction in their operation. In particular, a vertical structure cannot function as a vertical junction as having been widely believed in the literature. Moreover, due to a larger electrostatic screening, the bilayer region in the junction always has a smaller band gap than its monolayer counterpart. As a result, a potential well, aside from the usual potential barrier, will form universally in the bilayer region to affect the hole or electron quantum transport in the form of transmission or reflection. Taking black phosphorus as an example, we show that an oscillation in the transmission coefficient can be clearly resolved in a two-electrode prototypical device by non-equilibrium Green function combined with density functional theory calculations and the results can be qualitatively understood using a simple quantum well model. The presence of the quantum well is vital to 2D device design, including the effective tuning of quantum transmission by a vertical electric field.

cond-mat.mes-hall↗

arXiv2017

Built-in potential and band alignment of matter

The built-in potential is the interfacial potential difference due to electric dipole at the interface of two dissimilar materials. It is of central importance to the understanding of many phenomena in electrochemistry, electrical engineering, and materials science because it determines the band alignment at the interfaces. Despite its importance, its exact sign and magnitude have generally been recognized as an ill-defined quantity for more than half a century. Here, we provide a universal definition of the built-in potential. Furthermore, the built-in potential is explicitly determined by the bulk (i.e., innate) properties of the constituent materials when the system is in electronic equilibrium, while the interface plays a role only in the absence of equilibrium. Our quantitative theory enables a unified description of a variety of important properties in all types of interfaces, ranging from work functions and Schottky barriers in electronic devices to open circuit voltages and electrode potentials in electrochemical cells.

cond-mat.mtrl-sci↗

arXiv2017

Tunable spin states in two-dimensional magnet CrI3

The recent discovery of ferromagnetic single-layer CrI3 creates ample opportunities for studying fundamental properties of atomically-thin magnets. By using first-principles calculations and model analysis, we show that a lateral strain and/or charge doping can have unexpected effects on the magnetic properties of CrI3. In particular, strain tunes the magnetic order and anisotropy: (1) a compressive strain leads to a phase transition from a ferromagnetic insulator to an antiferromagnetic insulator, while (2) a tensile strain can flip the magnetic orientation from off-plane to in-plane. Interestingly, we find that the phase boundary for the first transition is insensitive to charge doping, whereas that of the second one can be significantly modulated by electron doping.

cond-mat.mes-hall↗

arXiv2017

Prediction of Ideal Topological Semimetals with Triply Degenerate Points in NaCu$_3$Te$_2$ Family

Triply degenerate points (TDPs) in band structure of a crystal can generate novel TDP fermions without high-energy counterparts. Although identifying ideal TDP semimetals, which host clean TDP fermions around the Fermi level ($E_F$) without coexisting of other quasiparticles, is critical to explore the intrinsic properties of this new fermion, it is still a big challenge and has not been achieved up to now. Here, we disclose an effective approach to search for ideal TDP semimetals via selective band crossing between antibonding $s$ and bonding $p$ orbitals along a line in the momentum space with $C_{3v}$ symmetry. Applying this approach, we have successfully identified the NaCu$_3$Te$_2$ family of compounds to be ideal TDP semimetals, where two and only two pairs of TDPs are located around the $E_F$. Moreover, we reveal an interesting mechanism to modulate energy splitting between a pair of TDPs, and illustrate the intrinsic features of TDP Fermi arcs in these ideal TDP semimetals.

cond-mat.mtrl-sci↗

arXiv2017

A Class of topological nodal rings and its realization in carbon networks

Topological nodal rings can be classified into three types according to the slopes in their energy dispersion. The first two are made of type-I and II nodal points, respectively, while the third is made of both. In carbon networks, all three types can exist. Under strain, phase transitions from a topological metal to a semiconductor, take place, and at the transition points, these nodal rings shrink into type-I, II, and III semi-Dirac points. These topological features exhibit diverse electron-hole pocket patterns and Landau levels, which give rise to exotic transport properties.

cond-mat.mtrl-sci↗

arXiv2017

Three-dimensional Pentagon Carbon with a genesis of emergent fermions

Carbon, the basic building block of our universe, enjoys a vast number of allotropic structures. Owing to its bonding characteristic, most carbon allotropes possess the motif of hexagonal rings. Here, with first-principles calculations, we discover a new metastable three-dimensional carbon allotrope entirely composed of pentagon rings. The unique structure of this "Pentagon Carbon" leads to extraordinary electronic properties, making it a cornucopia of emergent topological fermions. Under lattice strain, Pentagon Carbon exhibits topological phase transitions, generating a series of novel quasiparticles, from isospin-1 triplet fermions, to triply-degenerate fermions, and further to concatenated Weyl-loop fermions. Its Landau level spectrum also exhibits distinct features, including a huge number of almost degenerate chiral Landau bands, implying pronounced magneto-transport signals. Our work not only discovers a remarkable carbon allotrope with highly rare structural motifs, it also reveals a fascinating hierarchical particle genesis with novel topological fermions beyond the Dirac and Weyl paradigm.

cond-mat.mtrl-sci↗

arXiv2017

Chemical-disorder-caused Medium Range Order in Covalent Glass

How atoms in covalent solids rearrange over a medium-range length-scale during amorphization is a long pursued question whose answer could profoundly shape our understanding on amorphous (a-) networks. Based on ab-intio calculations and reverse Monte Carlo simulations of experiments, we surprisingly find that even though the severe chemical disorder in a-GeTe undermined the prevailing medium range order (MRO) picture, it is responsible for the experimentally observed MRO. That this thing could happen depends on a novel atomic packing scheme. And this scheme results in a kind of homopolar bond chain-like polyhedral clusters. Within this scheme, the formation of homopolar bonds can be well explained by an electron-counting model and further validated by quantitative bond energy analysis based. Our study suggests that the underlying physics for chemical disorder in a-GeTe is intrinsic and universal to all severely chemically disordered covalent glasses.

cond-mat.dis-nn↗

arXiv2016

Band alignment of two-dimensional lateral heterostructures

Recent experimental synthesis of two-dimensional (2D) heterostructures opens a door to new opportunities in tailoring the electronic properties for novel 2D devices. Here, we show that a wide range of lateral 2D heterostructures could have a prominent advantage over the traditional three-dimensional (3D) heterostructures, because their band alignments are insensitive to the interfacial conditions. They should be at the Schottky-Mott limits for semiconductor-metal junctions and at the Anderson limits for semiconductor junctions, respectively. This fundamental difference from the 3D heterostructures is rooted in the fact that, in the asymptotic limit of large distance, the effect of the interfacial dipole vanishes for 2D systems. Due to the slow decay of the dipole field and the dependence on the vacuum thickness, however, studies based on first-principles calculations often failed to reach such a conclusion. Taking graphene/hexagonal-BN and MoS2/WS2 lateral heterostructures as the respective prototypes, we show that the converged junction width can be order of magnitude longer than that for 3D junctions. The present results provide vital guidance to high-quality transport devices wherever a lateral 2D heterostructure is involved.

physics.comp-ph↗

arXiv2016

Semi-Dirac Semimetal in Silicene Oxide

Semi-Dirac semimetal is a material exhibiting linear band dispersion in one direction and quadratic band dispersion in the orthogonal direction and, therefore, hosts massless and massive fermions at the same point in the momentum space. While a number of interesting physical properties have been predicted in semi-Dirac semimetals, it has been rare to realize such materials in condensed matters. Based on the fact that some honeycomb materials are easily oxidized or chemically absorb other atoms, here, we theoretically propose an approach of modifying their band structures by covalent addition of group-VI elements and strain engineering. We predict a silicene oxide with chemical formula of Si2O to be a candidate of semi-Dirac semimetal. Our approach is backed by the analysis and understanding of the effect of p-orbital frustration on the band structure of the graphene-like materials.

cond-mat.mes-hall↗

arXiv2016

Enhanced van der Waals epitaxy via electron transfer-enabled interfacial dative bond formation

Enhanced van der Waals (vdW) epitaxy of semiconductors on layered vdW substrate is identified as the formation of dative bonds. For example, despite that NbSe2 is a vdW layered material, first-principles calculations reveal that the bond strength at CdTe-NbSe2 interface is five times as large as that of vdW interaction at CdTe-graphene interface. The unconventional chemistry here is enabled by an effective net electron transfer from Cd dangling-bond states at CdTe surface to metallic non-bonding NbSe2 states, which is a necessary condition to activate the Cd for enhanced binding with Se.

physics.comp-ph↗

arXiv2016

Chalcogenide Perovskites- an Emerging Class of Ionic Semiconductors

We report the synthesis and characterization of a novel class of ionic semiconductor materials- inorganic chalcogenide perovskites. Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts. Their crystal structures were identified by XRD and composition by EDX. UV-vis and photoluminescence measurements confirmed that they are direct gap semiconductors with band gap values consistent with theoretical predictions. By adopting an anion alloying approach, we demonstrate widely tunable band gap from 1.73 eV to 2.87 eV. These strongly ionic semiconductors provide a new avenue for engineering the semiconducting properties for applications such as energy harvesting, solid state lighting and sensing.

cond-mat.mtrl-sci↗

arXiv2016

Electron and phonon properties and gas storage in carbon honeycomb

A new kind of three-dimensional carbon allotropes, termed carbon honeycomb (CHC), has recently been synthesized [PRL 116, 055501 (2016)]. Based on the experimental results, a family of graphene networks are constructed, and their electronic and phonon properties are calculated by using first principles methods. All networks are porous metal with two types of electron transport channels along the honeycomb axis and they are isolated from each other: one type of channels is originated from the orbital interactions of the carbon zigzag chains and is topologically protected, while the other type of channels is from the straight lines of the carbon atoms that link the zigzag chains and is topologically trivial. The velocity of the electrons can reach ~10^6 m/s. Phonon transport in these allotropes is strongly anisotropic, and the thermal conductivities can be very low when compared with graphite by at least a factor of 15. Our calculations further indicate that these porous carbon networks possess high storage capacity for gaseous atoms and molecules in agreement with experiment.

cond-mat.mtrl-sci↗

arXiv2016

Transition of thermal rectification in silicon nanocones

Current understanding of thermal rectification asserts that the rectification ratio (R), which measures the relative heat flux between two ends of a nanostructure, is determined by its geometric asymmetry. The higher the asymmetry, the higher the R. However, by using nonequilibrium molecular dynamics method we have calculated thermal transport in Si nanocones as an example, the results show that such an understanding may be incorrect and R may not increase monotonically with geometric asymmetry. Rather, R exhibits a sharp reverse when the vertex angle (θ) of the nanocone is approximately 90°. In other words, when θ > 90°, R decreases, rather than increasing. We show that this abnormal behavior is originated from a change in the thermal transport mechanism. At small θs, phonon transport is dominated by localized modes, especially for transport from tip to bottom. At large θs, however, these localized modes disappear, leading to R decrease.

cond-mat.mes-hall↗

arXiv2016

Coexistence of flat bands and Dirac bands in a carbon-Kagome-lattice family

The Dirac bands and flat bands are difficult to coexist because they represent two extreme ends of electronic properties. However, in this paper, we propose a carbon-Kagome-lattice (CKL) family based on first-principles calculations, and the coexistence of Dirac and flat bands are observed in this series of three-dimensional carbon structures. The flat bands are originated from the orbital interactions of the Kagome lattices, while the Dirac bands are related to the carbon zigzag chains. A tight-binding model is used to explain the various band structures in different CKLs. The coexistence of flat and Dirac bands around the Fermi level implies that CKL structures maybe can serve as superconductors. In addition, electronic properties of the thinnest CKL slabs, only consisting of benzene rings, are studied. Flat bands are found in the band spectra of the two-dimensional structures, and split into spin-up and spin-down bands because of strong correlated effect in the case of hole doping.

cond-mat.mtrl-sci↗

arXiv2016

Towards Three-Dimensional Weyl-SurfaceSemimetals in Graphene Networks

Graphene as a two-dimensional (2D) topological Dirac semimetal has attracted much attention for its outstanding properties and potential applications. However, three-dimensional (3D) topological semimetals for carbon materials are still rare. Searching for such materials with salient physics has become a new direction for carbon research. Here, using first-principles calculations and tight-binding modeling, we study three types of 3D graphene networks whose properties inherit those of Dirac electrons in graphene. In the band structures of these materials, two flat Weyl surfaces appear in the Brillouin zone (BZ), which straddle the Fermi level and are robust against external strain. When the networks are cut, the resulting lower-dimensional slabs and nanowires remain to be semimetallic with Weyl line-like and point-like Fermi surfaces, respectively. Between the Weyl lines, flat surface bands emerge with strong magnetism when each surface carbon atom is passivated by one hydrogen atom. The robustness of these structures can be traced back to a bulk topological invariant, ensured by the sublattice symmetry, and to the one-dimensional (1D) Weyl semimetal behavior of the zigzag carbon chain, which has been the common backbone to all these structures. The flat Weyl-surface semimetals may enable applications in correlated electronics, as well as in energy storage, molecular sieve, and catalysis because of their good stability, porous geometry, and large superficial area.

cond-mat.mtrl-sci↗

arXiv2015

Atomically Resolved FeSe/SrTiO3(001) Interface Structure by Scanning Transmission Electron Microscopy

Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. By combined in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and ex-situ scanning transmission electron microscopy (STEM) studies, we report on atomically resolved structure including both lattice constants and actual atomic positions of the FeSe/STO interface under both non-superconducting and superconducting states. We observed TiO2 double layers (DLs) and significant atomic displacements in the top two layers of STO, lattice compression of the Se-Fe-Se triple layer, and relative shift between bottom Se and topmost Ti atoms. By imaging the interface structures under various superconducting states, we unveil a close correlation between interface structure and superconductivity. Our atomic-scale identification of FeSe/STO interface structure provides useful information on investigating the pairing mechanism of this interface-enhanced high-temperature superconducting system.

cond-mat.supr-con↗