arXiv subjects

Shengbai Zhang

Publications and source records attributed to Shengbai Zhang.

At least 37 records · Page 2Linked to original sources

arXiv2021

Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing

Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS3 thin films at above 1000 C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS3 thin films at temperatures as low as 500 C, by changing the chemical reaction pathway. The single phase BaZrS3 thin film was confirmed by X-ray diffraction and Raman spectroscopies. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. The fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm2/Vs and 2.6 cm2/Vs, respectively.

cond-mat.mtrl-sci↗

arXiv2021

Realization of AlSb in the double layer honeycomb structure: a robust new class of two-dimensional material

Exploring new two-dimensional (2D) van der Waals (vdW) systems is at the forefront of materials physics. Here, through molecular beam epitaxy on graphene-covered SiC(0001), we report successful growth of AlSb in the double-layer honeycomb (DLHC) structure, a 2D vdW material which has no direct analogue to its 3D bulk and is predicted kinetically stable when freestanding. The structural morphology and electronic structure of the experimental 2D AlSb are characterized with spectroscopic imaging scanning tunneling microscopy and cross-sectional imaging scanning transmission electron microscopy, which compare well to the proposed DLHC structure. The 2D AlSb exhibits a bandgap of 0.93 eV versus the predicted 1.06 eV, which is substantially smaller than the 1.6 eV of bulk. We also attempt the less-stable InSb DLHC structure; however, it grows into bulk islands instead. The successful growth of a DLHC material here opens the door for the realization of a large family of novel 2D DLHC traditional semiconductors with unique excitonic, topological, and electronic properties.

cond-mat.mtrl-sci↗

arXiv2020

Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the phase 2H-1T phase transition which imposes a 3percent directional elongation of the topological 1T phase with respect to the semiconducting 2H. We note that only a few percent 2H- 1T phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with First-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices.

cond-mat.mes-hall↗

arXiv2020

Vector Potential and Surface Magnetic Field in Magnetoelectric Antiferromagnetic Materials

A general formula for the average vector potential of bulk periodic systems is proposed and shown to set the boundary conditions at magnetic interfaces. For antiferromagnetic materials, the study reveals a unique relation between the macroscopic potential and the orientation-dependent magnetic quadrupole, as a result of the different crystalline and magnetic symmetries. In particular, at surfaces and interfaces of a truncated bulk without inversion and time-reversal symmetries, the average vector potential exhibits a discontinuity, which results in an interfacial magnetic field. In general, however, due to the surface and interface electronic and atomic relaxations, additional magnetization may result. For the experimentally-observed magnetoelectric antiferromagnets, in particular, our symmetry analysis suggest that the relaxation effects could well be a system response to the presence of such a potential discontinuity.

cond-mat.mtrl-sci↗

arXiv2020

Realization of Semiconducting Layered Multiferroic Heterojunctions via Asymmetrical Magnetoelectric Coupling

Two-dimensional (2D) semiconducting multiferroics that can effectively couple magnetic and polarization (P) orders have great interest for both fundamental research and technological applications in nanoscale, which are, however, rare in nature. In this study, we propose a general mechanism to realize semiconducting 2D multiferroics via vdW heterojunction engineering, as demonstrated in a typical heterostructure consisting of magnetic bilayer CrI3 (bi-CrI3) and ferroelectric monolayer In2Se3. Interestingly, the novel indirect orbital coupling between Se 4p and Cr 3d orbitals, intermediated by the interfacial I 5p orbitals, are switchable in the opposite P configurations, resulting in an unexpected mechanism of strong asymmetrical magnetoelectric coupling. Therefore, along with the noticeable ferroelectric energy barrier induced by In2Se3, the realization of opposite magnetic orders in opposite P configurations can eventually result in the novel multiferroicity in bi-CrI3/In2Se3. Finally, we demonstrate that our mechanism can generally be applied to design other vdW multiferroics even with tunable layer thickness.

cond-mat.mtrl-sci↗

arXiv2020

Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO

The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 angstrom with an insulating band gap of 6 eV. Our low energy electron diffraction (LEED) measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moiré pattern analysis shows the BeO honeycomb structure maintains long range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complimentary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring novel 2D electronic materials.

cond-mat.mes-hall↗

arXiv2020

Uncovering vacuum level in infinite solid by real-space potential-unfolding

Although real materials are finite in size, electronic structure theory is built on the assumption of infinitely large solid, which led to a longstanding controversy: where is the vacuum level? Here, we introduce an analytic real-space potential-unfolding approach to uncover the vacuum level in infinitely large solid. First-principles calculations show that, in the absence of a physical surface, the bulk band structure, often measured with respect to an average bulk potential, is offset by a hereto unknown and orientation-dependent bulk quadrupole with respect to the vacuum level. By identifying intrinsic contributions of a bulk solid to its surface and interface properties, our theory eliminates the ambiguities surrounding the physical origin of the band alignment between matters.

cond-mat.mtrl-sci↗

arXiv2020

Ti-alloying of BaZrS3 chalcogenide perovskite for photovoltaics

BaZrS3, a prototypical chalcogenide perovskite, has been shown to possess a direct band gap, an exceptionally strong near band edge light absorption, and good carrier transport. Coupled with its great stability, non-toxicity with earth abundant elements, it is thus a promising candidate for thin film solar cells. However, its reported band gap in the range of 1.7-1.8 eV is larger than the optimal value required to reach the Shockley-Queisser limit of a single junction solar cell. Here we report the synthesis of Ba(Zr1-xTix)S3 perovskite compounds with a reduced band gap. It is found that Ti alloying is extremely effective in band gap reduction of BaZrS3: a mere 4 at% alloying decreases the band gap from 1.78 to 1.51 eV, resulting in a theoretical maximum power conversion efficiency of 32%. Higher Ti-alloying concentration is found to destabilize the distorted chalcogenide perovskite phase.

cond-mat.mtrl-sci↗

arXiv2020

Spin-Triplet Excitonic Insulator: The Case of Graphone

While various excitonic insulators have been studied in the literature, due to the perceived too-small spin splitting, spin-triplet excitonic insulator is rare. In two-dimensional systems such as a graphone, however, it is possible, as revealed by first-principles calculations coupled with Bethe-Salpeter equation. The critical temperature, given by an effective Hamiltonian, is 11.5 K. While detecting excitonic insulators is still a daunting challenge, the condensation of triplet excitons will result in spin superfluidity, which can be directly measured by a transport experiment. Nonlocal dielectric screening also leads to an unexpected phenomenon, namely, an indirect-to-direct transition crossover between single-particle band and exciton dispersion in graphone, which offers yet another test by experiment.

cond-mat.mtrl-sci↗

arXiv2019

An Environmentally Stable and Lead-Free Chalcogenide Perovskite

Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein is reported a thin film of BaZrS3, a lead-free chalcogenide perovskite. Photoluminescence and X-ray diffraction measurements show that BaZrS3 is far more stable than methylammonium lead iodide (MAPbI3) in moist environments. Moisture- and light-induced degradations in BaZrS3 and MAPbI3 are compared by using simulations and calculations based on density functional theory. The simulations reveal drastically slower degradation in BaZrS3 due to two factors - weak interaction with water, and very low rates of ion migration. BaZrS3 photo-detecting devices with photo-responsivity of ~46.5 mA W-1 are also reported. The devices retain ~60% of their initial photo-response after 4 weeks in ambient conditions. Similar MAPbI3 devices degrade rapidly and show ~95% decrease in photo-responsivity in just 4 days. The findings establish the superior stability of BaZrS3 and strengthen the case for its use in optoelectronics. New possibilities for thermoelectric energy conversion using these materials are also demonstrated.

physics.app-ph↗

arXiv2019

Fabrication of BaZrS3 chalcogenide perovskite thin films for optoelectronics

BaZrS3 is a prototypical chalcogenide perovskite, an emerging class of unconventional semiconductor. Recent results on powder samples reveal that it is a material with a direct band gap of 1.7-1.8 eV, a very strong light-matter interaction, and a high chemical stability. However, many of the fundamental properties are unknown, hindering the ability to apply BaZrS3 for optoelectronics. Here we report the fabrication of BaZrS3 thin films, by sulfurization of oxide films deposited by pulsed laser deposition. We show that these films are n-type with carrier densities in the range of 10^19-10^20 cm^-3. Depending on the processing temperature, the Hall mobility ranges from 2.1 to 13.7 cm^2/Vs. The absorption coefficient is > 10^5 cm-1 at photon energy > 1.97 eV. Temperature dependent conductivity measurements suggest shallow donor levels. These results assure that BaZrS3 is a promising candidate for optoelectronics such as photodetectors, photovoltaics, and light emitting diodes.

cond-mat.mtrl-sci↗

arXiv2019

Topological carbon materials: a new perspective

Carbon has numerous one-dimensional (1D), two-dimensional (2D), and three-dimensional (3D) allotropic structures. The study of carbon materials has been a major focus of material science and condensed matter physics. Previous studies have identified different classes of topological semimetallic carbon allotropes with different topological phases. In this review, we first give a brief summary of the development of carbon allotropes from 1D to 3D. Next, we discuss topological properties of carbon materials and their physical origin. Then, we consider possible expansion of the topological study of carbon materials to other light-element materials such as boron. Finally, we present future prospects in pursue of topological physics within carbon allotropes.

cond-mat.mtrl-sci↗

arXiv2019

Understanding the origin of bandgap problem in transition and post-transition metal oxides

Improving electronic structure calculations for practical and technologically-important materials has been a never-ending pursue. This is especially true for transition and post-transition metal oxides for which the current first-principles approaches still suffer various drawbacks. Here we present a hierarchical-hybrid functional approach built on the use of pseudopotentials. The key is to introduce a discontinuity in the exchange functional between core and valence electrons. It allows for treating the localization errors of sp and d electrons differently, which have been known to be an important source of error for the band gap. Using ZnO as a prototype, we show the approach is successful in simultaneously reproducing the band gap and d-band position. Remarkably, the same approach, without having to change the hybrid mixing parameters from those of Zn, works reasonably well for other binary 3d transition and post-transition metal oxides across board. Our findings point to a new direction of systematically improving the exchange functional in first-principles calculations.

cond-mat.mtrl-sci↗

arXiv2019

Half Excitonic Insulator: A Single-Spin Bose-Einstein Condensate

First-principles calculations reveal an unusual electronic state (dubbed as half excitonic insulator) in monolayer 1T-MX2 (M = Co, Ni and X = Cl, Br). Its one spin channel has a many-body ground state due to excitonic instability, while the other is characterized by a conventional band insulator gap. This disparity arises from a competition between the band gap and exciton binding energy, which exhibits a spin-dependence due to different orbital occupations. Such a state can be identified by optical absorption measurements and angle-resolved photoemission spectroscopy. Our theory not only provides new insights for the study of exciton condensation in magnetic materials but also suggests that strongly-correlated materials could be fertile candidates for excitonic insulators.

cond-mat.mtrl-sci↗

arXiv2018

Electronic Fingerprints of Cr and V Dopants in Topological Insulator Sb2Te3

By combining scanning tunneling microscopy/spectroscopy and first-principles calculations, we systematically study the local electronic states of magnetic dopants V and Cr in the topological insulator (TI) Sb2Te3. Spectroscopic imaging shows diverse local defect states between Cr and V, which agree with our first-principle calculations. The unique spectroscopic features of V and Cr dopants provide electronic fingerprints for the co-doped magnetic TI samples with the enhanced quantum anomalous Hall effect. Our results also facilitate the exploration of the underlying mechanism of the enhanced quantum anomalous Hall temperature in Cr/V co-doped TIs.

cond-mat.str-el↗

arXiv2018

Enhanced Light Emission from the Ridge of Two-dimensional InSe Flakes

InSe, a newly rediscovered two-dimensional (2D) semiconductor, possesses superior electrical and optical properties as a direct bandgap semiconductor with high mobility from bulk to atomically thin layers, drastically different from transition metal dichalcogenides (TMDCs) in which the direct bandgap only exists at the single layer limit. However, absorption in InSe is mostly dominated by an out-of-plane dipole contribution which results in the limited absorption of normally incident light which can only excite the in-plane dipole at resonance. To address this challenge, we have explored a unique geometric ridge state of the 2D flake without compromising the sample quality. We observed the enhanced absorption at the ridge over a broad range of excitation frequencies from photocurrent and photoluminescence (PL) measurements. In addition, we have discovered new PL peaks at low temperature due to defect states on the ridge, which can be as much as ~ 60 times stronger than the intrinsic PL peak of InSe. Interestingly, the PL of the defects is highly tunable through an external electrical field, which can be attributed to the Stark effect of the localized defects. InSe ridges thus provide new avenues for manipulating light-matter interaction and defect-engineering which are vitally crucial for novel optoelectronic devices based on 2D semiconductors.

cond-mat.mes-hall↗

arXiv2018

Revealing the Biexciton and Trion-exciton Complexes in BN Encapsulated WSe2

Strong Coulomb interactions in single-layer transition metal dichalcogenides (TMDs) result in the emergence of strongly bound excitons, trions and biexcitons. These excitonic complexes possess the valley degree of freedom, which can be exploited for quantum optoelectronics. However, in contrast to the good understanding of the exciton and trion properties, the binding energy of the biexciton remains elusive, with theoretical calculations and experimental studies reporting discrepant results. In this work, we resolve the conflict by employing low-temperature photoluminescence spectroscopy to identify the biexciton state in BN encapsulated single-layer WSe2. The biexciton state only exists in charge neutral WSe2, which is realized through the control of efficient electrostatic gating. In the lightly electron-doped WSe2, one free electron binds to a biexciton and forms the trion-exciton complex. Improved understanding of the biexciton and trion-exciton complexes paves the way for exploiting the many-body physics in TMDs for novel optoelectronics applications.

cond-mat.mes-hall↗

arXiv2018

Realizing intrinsic excitonic insulator by decoupling exciton binding energy from the minimum band gap

Direct-gap materials hold promises for excitonic insulator. In contrast to indirect-gap materials, here the difficulty to distinguish from a Peierls charge density wave is circumvented. However, direct-gap materials still suffer from the divergence of polarizability when the band gap approaches zero, leading to diminishing exciton binding energy. We propose that one can decouple the exciton binding energy from the band gap in materials where band-edge states have the same parity. First-principles calculations of two-dimensional GaAs and experimentally mechanically exfoliated single-layer TiS 3 lend solid supports to the new principle.

cond-mat.mtrl-sci↗