arXiv subjects

Shengwei Jiang

Publications and source records attributed to Shengwei Jiang.

At least 19 recordsLinked to original sources

arXiv2026

Chiral superconductors and competing states across a Lifshitz transition in rhombohedral pentalayer graphene

Rhombohedral multilayer graphene hosts a distinctive low-energy electronic structure in which strong Coulomb interactions and nontrivial quantum geometry intertwine to generate exotic quantum states. Recent experiments reported signatures of chiral superconductivity in electron-doped rhombohedral multilayer graphene within the spin- and valley-polarized regime. Here we map the normal-state fermiology surrounding chiral superconductivity in rhombohedral pentalayer graphene. Quantum oscillation measurements reveal an electrically controlled Lifshitz transition between a simply-connected circular quarter-metal Fermi surface and an annular quarter-metal Fermi surface. The Lifshitz boundary itself shifts with perpendicular magnetic field, consistent with the strongly momentum-dependent orbital magnetic moment of the low-energy band. Approaching the transition from either side, the electron effective mass becomes strongly enhanced, implying the formation of a nearly dispersionless band bottom and a strongly reduced kinetic-energy scale. This singular electronic structure produces a regime of exceptionally strong instability in which chiral superconductivity competes with Wigner crystalline phases and reentrant quantum Hall states. In particular, two superconducting regions with signatures of orbital time-reversal-symmetry breaking lie on opposite sides of the Lifshitz boundary and have comparable transition temperatures, yet the annular-side state is suppressed by a substantially smaller perpendicular magnetic field. Our calculation finds comparable chiral pairing tendencies on the two parent Fermi surfaces while producing a much lower orbital-Zeeman pair-breaking scale and an additional finite-momentum pairing tendency for the annular state. These results identify Fermi-surface topology as a key control parameter for chiral superconductivity in rhombohedral graphene.

cond-mat.mes-hall↗

arXiv2026

Giant Surface-driven Nonlinear Hall Effect in BiTeCl at Room Temperature

The nonlinear Hall effect (NLHE) provides a pathway to generate a Hall response in time-reversal-symmetric yet inversion-symmetry-broken systems. NLHE can rectify an alternating current into a transverse direct voltage, making it attractive for radio-frequency rectification, energy harvesting, and terahertz detection, applications for which device miniaturization remains a central pursuit. In this context, the inherent inversion symmetry breaking at surfaces is particularly appealing: because symmetry is necessarily broken at the surface of any crystal, irrespective of whether its bulk is centrosymmetric, surface-driven nonlinear responses lift the stringent constraint on bulk symmetry and open a route toward compact device architectures. Here we report the observation of a giant, surface-driven second-order nonlinear Hall effect in the Rashba-type polar semiconductor BiTeCl at room temperature. The determined second-order nonlinear Hall susceptibility at 300 K reaches 1.68 $\mu$mV$^{-1}$, which is 80 times larger than that of the best previously reported surface-dominated systems. We attribute this giant response to the synergistic interplay between BiTeCl's polar crystal structure and its rich surface states: the polar stacking renders the top and bottom surfaces inequivalent, so that the nonlinear response originates from a single surface without compensation from the other. Symmetry and scaling analyses suggest that both skew-scattering and side-jump mechanisms contribute to the observed effect. Our findings not only identify BiTeCl as a promising platform for future applications utilizing the NLHE, but also establish the asymmetry between the opposite surfaces of a polar crystal as a general design principle for discovering surface-driven materials with larger nonlinear Hall responses.

cond-mat.mtrl-sci↗

arXiv2026

Interference-Enhanced Large Electron-Phonon Coupling from Raman-active Breathing Modes in Moir\'e Semiconductors

Superconductivity was recently observed in twisted WSe2 and MoTe2, raising a central question: is the pairing driven by electronic correlations, by phonons, or by both? Answering it requires determining the electron-phonon coupling (EPC) in these moir\'e semiconductors, whose calculation in realistic supercells of thousands of atoms lies beyond the reach of direct first-principles methods. Here we combine filling-dependent Raman spectroscopy with machine-learning first-principles calculations to obtain the EPC mode by mode in supercells of up to tens of thousands of atoms. Raman reveals only a few moir\'e phonons whose frequencies shift strongly with filling; we trace this to an interference selection rule: a phonon couples strongly only when its displacement texture matches the static lattice-reconstruction pattern, and is otherwise suppressed by destructive interference. The rule selects the low- and high-frequency breathing modes seen in Raman and makes the coupling peak at large twist angles, near those at which superconductivity appears. Lattice-reconstruction interference thus emerges as an organizing principle for moir\'e EPC, pointing to a substantial, potentially dominant, phonon contribution to large-angle pairing.

cond-mat.supr-con↗

arXiv2026

Stacking-order-dependent electronic properties of MoTe2/WSe2 moir\'e bilayers

Transition metal dichalcogenide (TMD) moir\'e bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved optical second harmonic generation (SHG) is the most used technique for stacking order characterization but unverified for most heterobilayers. Here we calibrate the optical SHG for angle-aligned MoTe2/WSe2 bilayers by the scanning transmission electron microscopy (STEM). We directly compare the transport and magnetic properties and the electronic phase diagram for two distinct stacking orders. With the calibrated stacking order assignment, we clarify the interpretation of earlier results, including the nature of the Chern insulator, mechanism of an electric-field-tuned metal-insulator transition at half band filling, and the Kondo lattice physics. Our work provides a consistent picture of the relation between the stacking order and the electronic properties of MoTe2/WSe2 moir\'e bilayers.

cond-mat.mes-hall↗

arXiv2026

Twist-angle evolution from valley-polarized fractional topological phases to valley-degenerate superconductivity in twisted bilayer MoTe2

Moir\'e superlattices formed by semiconducting transition metal dichalcogenides (TMDs) provide a highly tunable platform for investigating strongly correlated and topological quantum phases. As a prototypical example, twisted bilayer MoTe2 (tMoTe2) has been shown to host fractional topological phases, such as zero-field fractional Chern insulators (FCIs) exhibiting fractional quantum anomalous Hall (FQAH) effects. However, how these correlated topological phases evolve with twist angle and compete with other quantum phases in tMoTe2 remains largely unexplored. Here we report a systematic transport study of twist-angle-dependent phase diagrams in tMoTe2 across a range of 3.8{\deg}-5.78{\deg}, revealing an evolution from fractionalized states of matter with spontaneous valley polarization to valley-degenerate superconductivity. At relatively small twist angles, partially-filled Chern bands of tMoTe2 host FQAH states following the Jain sequence, together with signatures of an anomalous composite Fermi liquid at moir\'e hole filling factor {\nu}h = 1/2. Increasing twist angle progressively suppresses fractional topological phases and reconstructs the half-filled Chern band into symmetry-breaking integer Chern insulating states. At {\nu}h = 1, we observe a transition from robust integer quantum anomalous Hall (IQAH) insulators at small angles to displacement-field-tuned, topologically trivial correlated insulators at larger angles. Remarkably, at a twist angle of 5.78{\deg}, superconductivity emerges adjacent to the correlated insulating phase, with a phase diagram closely resembling that recently reported in twisted bilayer WSe2 (tWSe2). Our results uncover a unified twist-angle-driven phase evolution linking fractional topology, symmetry breaking, magnetic order, and superconductivity, providing new insight into the emergent quantum phenomena in moir\'e systems.

cond-mat.mes-hall↗

arXiv2026

Emergence of a symmetry-broken Chern insulator near a moir\'e Kondo breakdown

Moir\'e semiconductors built on angle-aligned transition metal dichalcogenide (TMD) heterobilayers provide a physical realization of the Kondo lattice model, in which one TMD layer is prepared in a Mott insulating state supporting a lattice of local magnetic moments and the other layer in a metallic state supporting itinerant carriers. The artificial Kondo lattice enables the exploration of exotic states of matter near a continuously tunable Kondo breakdown. Here we report the emergence of a symmetry-broken Chern insulator at a moir\'e hole filling factor 4/3 in angle-aligned MoTe2/WSe2 moir\'e bilayers, which realize a chiral Kondo lattice. The symmetry-broken Chern insulator, which exhibits integer quantized Hall conductance at a fractional moir\'e filling, breaks the translational symmetry of the lattice spontaneously; it also appears only near a magnetic field-induced Kondo breakdown in the mixed-valence regime of the material. We further demonstrate that the magnetic field required to induce the Kondo breakdown and to stabilize the symmetry-broken Chern insulator is twist angle dependent. The results present new opportunities for exploring the subtle interplay between topology and Kondo interactions in moir\'e semiconductors.

cond-mat.mes-hall↗

arXiv2026

Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2

Moir\'e semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moir\'e potential. However, limited interlayer coupling strength and the lack of efficient tuning methods hinder further exploration of correlated phenomena in moir\'e semiconductors. Here we introduce a cryogenic dual-gated diamond-anvil platform using helium as a pressure medium, enabling reversible hydrostatic tuning together with magneto-optical spectroscopy in twisted bilayer WSe2. Pressure enhances the moir\'e potential, redshifts excitons, and stabilizes Stoner ferromagnetism otherwise absent at a 3.1-degree twist. Simultaneously, the half-filled C = 1 Chern insulating state strengthens, exhibiting a reduced saturation field. Moreover, we observe a topological phase transition from a Chern insulator to a Mott insulator at around 2 GPa. First-principles calculations reveal that a Gamma-to-K valence-band-maximum switching drives this transition by converting an Ising-like topological K-valley miniband into a spin-degenerate trivial Gamma miniband. Our findings demonstrate hydrostatic pressure as a powerful, continuous control axis for correlated magnetism and topological band engineering in moir\'e materials.

cond-mat.mtrl-sci↗

arXiv2026

Electric-field-tuned consecutive topological phase transitions between distinct correlated insulators in moire MoTe2/WSe2 heterobilayer

Consecutive topological phase transitions (TPTs) between strongly correlated electronic phases that differ simultaneously in symmetry breaking and topological order are of fundamental interest in condensed matter physics, yet are rarely realized experimentally. We report two consecutive electric-field-driven TPTs at half filling (nu = 1) in angle-aligned MoTe2/WSe2 moire heterobilayers. With increasing out-of-plane displacement field, a geometrically frustrated Mott insulator evolves into a ferromagnetic quantum anomalous Hall (QAH) Mott insulator, i.e., a spin-polarized topological Mott insulator without an observable charge-gap closure, and subsequently into an antiferromagnetic, valley-coherent Mott insulator (VC-AFM) accompanied by a continuous charge-gap collapse and the emergence of a critical metallic state. Layer-resolved magnetic circular dichroism (MCD), magneto-transport, and compressibility measurements jointly determine the phase diagram. The high-field evolution of the antiferromagnetic state reveals a metamagnetic-like transition at a critical field B*, above which a Chern insulating transport response reappears. Our results establish the MoTe2/WSe2 moire platform as a tunable realization of an extended Kane-Mele-Hubbard model hosting sequential correlation-topology-intertwined transitions.

cond-mat.str-el↗

arXiv2026

Ferroelectricity in Atomically Thin Metallic TaNiTe$_5$ with Ultrahigh Carrier Density

Ferroelectric metals, characterized by the coexistence of ferroelectricity and metallic conductivity, present a fundamental challenge due to the screening effect of free charge carriers on the long-range electric dipole order. Existing strategies to circumvent this obstacle include employing two-dimensional (2D) crystals, where reduced dimensionality and low carrier densities suppress screening, or designing materials of van der Waals (vdW) superlattice with spatially separated and decoupled conductive and nearly insulating ferroelectric layers. Here, we report an alternative paradigm in TaNiTe5, where an ultrahigh carrier density coexists with an out-of-plane ferroelectric order within the same surface monolayer. Using piezoresponse force microscopy (PFM), we observed robust ferroelectric behavior in TaNiTe5 down to single-unit-cell thickness (~1.3 nm) at room temperature. Scanning transmission electron microscopy (STEM) gives structural evidence that the ferroelectricity might originate from the vertical displacement of outmost Te atoms on the surface, breaking the inversion symmetry. Concurrently, electrical transport measurements reveal a metallic state with a carrier density on the order of 10$^{15}$ cm$^{-2}$ (or 10$^{22}$ cm$^{-3}$) -- comparable to that of Copper (Cu). Our findings establish a unique platform for exploring the interplay between ferroelectricity and an ultrahigh density of mobile carriers in the 2D limit.

cond-mat.mtrl-sci↗

arXiv2026

Mechanical sensing of metamagnetic tricriticality in two-dimensional CrI3

Layered Ising metamagnets are antiferromagnetic (AF) materials consisting of monolayer Ising ferromagnets coupled to each other via interlayer AF interactions. They exhibit rich magnetic phase diagrams, featuring tricritical and critical end points, due to the competing magnetic interactions and the Ising anisotropy. While conventional thermodynamic probes can identify these critical points in bulk Ising metamagnets, achieving this in the two-dimensional (2D) limit, where enhanced fluctuation effects can substantially modify critical phenomena, remains to be realized. Here, we combine specific heat capacity (C_V) and magnetic circular dichroism measurements to identify these critical points, extract a tricritical exponent, and map out the complete magnetic phase diagram of 2D Ising metamagnetic CrI3. This is achieved in a nanomechanical device of 6-layer CrI3, in which a direct measurement of the temperature derivative of its mechanical resonance frequency gives C_V. The tricritical point is identified by the onset of an abrupt spin-flip transition on one side and, on the other side, by a vanishing specific heat {\lambda}-anomaly for a continuous AF phase transition. In contrast, only the spin-flip transition remains near the critical end point. Our results establish nanomechanical calorimetry as a general route to classify metamagnetic phase transitions and to study multicritical phenomena in 2D magnets.

cond-mat.mes-hall↗

arXiv2026

Superconductivity in non-centrosymmetric rhombohedral NbSe2

Crystal stacking offers a powerful yet underexplored route to engineer symmetry in layered superconductors. Here we report superconductivity in rhombohedral-stacked NbSe2 (3R-NbSe2), a non-centrosymmetric polytype in which global inversion symmetry is removed by stacking alone. Using comprehensive structural, transport, magnetic, and thermodynamic measurements, we establish superconductivity as a bulk property of the 3R phase and find that the in-plane upper critical field exceeds the Pauli paramagnetic limit, indicating the persistence of strong Ising-type spin-orbit coupling. Unlike the thickness-dependent superconductivity in centrosymmetric 2H-NbSe2, the superconducting transition temperature in 3R-NbSe2 shows little dependence on layer number but exhibits an unusually strong sensitivity to disorder. We further observe strongly enhanced nonlinear optical and electrical responses near the superconducting transition, consistent with stacking-induced inversion-symmetry breaking. Our results identify 3R-NbSe2 as a single-phase platform in which stacking engineering reshapes superconductivity and enables nonlinear transport phenomena in layered materials.

cond-mat.supr-con↗

arXiv2025

Moir\'e-modulated $\Gamma$ valley in twisted bilayer and twisted double-bilayer MoTe$_2$

Twisted MoTe$_2$ hosts intriguing correlated quantum phenomena including the fractional quantum anomalous Hall effect in twisted bilayer (t-BL) MoTe$_2$ near 3.7$^\circ$, which is sensitive to the twist angle and moir\'e superlattices. Here, we directly visualize the twist-angle-modulated electronic structure of t-BL and twisted double-bilayer (t-DBL) near this critical angle. We find that the moir\'e superlattice not only modifies the relative energy between $\Gamma$ and K valleys in t-BL MoTe$_2$, but also strongly reconstructs the $\Gamma$ valley for both t-BL and t-DBL. Specifically, the deep $p_z$-derived band at $\Gamma$ exhibits a distinct splitting that systematically varies with increasing twist angle. Theoretical analysis suggests that this modulation arises from the twist-angle-dependent lattice relaxation, especially interfacial corrugations. Our work directly visualizes the moir\'e-modulated electronic structure and provides key spectroscopic information of lattice relaxation and interlayer interactions underlying the physics of twisted MoTe$_2$.

cond-mat.str-el↗

arXiv2025

From fractional Chern insulators to topological electronic crystals in moir\'e MoTe2: quantum geometry tuning via remote layer

The quantum geometry of Bloch wavefunctions,encoded in the Berry curvature and quantum metric, is believed to be a decisive ingredient in stabilizing fractional quantum anomalous Hall (FQAH) effect(i.e., fractional Chern insulator, FCI, at zero magnetic field), against competing symmetry-breaking phases.A direct experimental demonstration of quantum geometry-driven switching between distinct correlated topological phases, however, has been lacking. Here, we report experimental evidence of such a switch in a high-quality 3.7 twisted MoTe2 (tMoTe2) device consisting of both A-A bilayer and A-AB trilayer regions. While composite Fermi liquid CFL/FQAH phases are established in A-A tMoTe2,the A-AB region-effectively an A-A moire bilayer proximitized by a remote B layer-develops a series of topological electronic crystal (TEC, also referred to as generalized QAH crystal, QAHC) states with integer quantized Hall conductance at commensurate fractional fillings v=1/2, 2/3, and an incommensurate filling factor v=0.53.The electrostatic phase diagram is mapped out by combined transport and optical measurements, showing that these TEC states emerge within the first moir'e valence band prior to any charge transfer to the B layer. Exact diagonalization (ED) incorporating the remote-layer-induced intralayer potential demonstrates a transition from a CFL-like manifold in the A-A limit to a Chern number C=1 ground-state consistent with a TEC at v=1/2 , accompanied by the further breakdown of ideal band geometry. Our results provide experimental evidence of quantum geometry-tuned competition between FQAH/CFL and TEC phases in a moir\'e Chern band and pave the way for further exploring correlation-driven topological phenomena by tuning quantum geometry.

cond-mat.mes-hall↗

arXiv2025

Signatures of unconventional superconductivity near reentrant and fractional quantum anomalous Hall insulators

Two-dimensional moir\'e Chern bands provide an exceptional platform for exploring a variety of many-body quantum phases at zero magnetic field within a lattice system. One particular intriguing possibility is that flat Chern bands can, in principle, support exotic superconducting phases together with fractional topological phases. Here, we report the observation of integer and fractional quantum anomalous Hall effects, the reentrant quantum anomalous Hall effect, and superconductivity within the first moir\'e Chern band of twisted bilayer MoTe2. The superconducting phase emerges from a normal state exhibiting anomalous Hall effects. Our results present the first example of superconductivity emerging within a flat Chern band that simultaneously hosts fractional quantum anomalous effects, a phenomenon never observed in any other systems. Our work expands the understanding of emergent quantum phenomena in moir\'e Chern bands, and offers a nearly ideal platform for engineering Majorana and parafermion zero modes in gate-controlled hybrid devices.

cond-mat.mes-hall↗

arXiv2025

Evidence of competing ground states between fractional Chern insulator and antiferromagnetism in moir\'e MoTe2

Two-dimensional moire materials present unprecedented opportunities to explore quantum phases of matter arising from the interplay of band topology and strong correlations.One of the most striking examples is the recent observation of fractional quantum anomalous Hall (FQAH) effect in twisted bilayer MoTe$_2$ (tMoTe2) with relatively large twist angles(~3.7deg-3.9deg). The electronic ground states are usually expected to be sensitive to the twist angle, as the twist angle determines the electron bandwidth and correlation strength in the moire system. Here, we report the observation of unexpected competing magnetic ground states in tMoTe2 moire superlattice, on which balance can be tipped by both twist angle and electric field (E). Specifically, we observed anomalous antiferromagnetic (AFM) ground states with zero Hall resistance at both v_h=1 and 2/3, at intermediate twist angles ~3deg. The AFM orders are suppressed by applying vertical E, and emergent ferromagnetism accompanied by integer Chern insulator (ICI) or fractional Chern insulator (FCI) states are observed near the critical E (E_c) of moire superlattice symmetry transition. Our results demonstrate tMoTe2 as a fascinating platform for exploring unexpected correlated phases with nontrivial topology and fractional excitations and point to electric-field-controlled ultralow-power spin-valleytronic devices.

cond-mat.mes-hall↗

arXiv2024

Interplay between topology and correlations in the second moir\'e band of twisted bilayer MoTe2

Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moir\'e systems. To date, experimental studies mainly focus on the first moir\'e flat band, except a very recent work that studied novel transport properties in higher moir\'e bands of a 2.1{\deg} tMoTe2 device. Here, we present the systematical transport study of approximately 3{\deg} tMoTe2 devices, especially for the second moir\'e band. At {\nu} = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1{\deg} tMoTe2 device. On the other hand, we observed ferromagnetism in the second moir\'e band, and a Chern insulator state driven by out-of-plane magnetic fields at {\nu} = -3. At {\nu} = -2.2 to -2.7, finite temperature resistivity minimum with 1/T scaling at low temperatures, and large out-of-plane negative magnetoresistance have been observed. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moir\'e flat band based on twisted MoTe2 platform.

cond-mat.mes-hall↗

arXiv2024

Observation of possible excitonic charge density waves and metal-insulator transitions in atomically thin semimetals

Charge density wave (CDW) is a collective quantum phenomenon with a charge modulation in solids1-2. Condensation of electron and hole pairs with finite momentum will lead to such an ordered state3-7. However, lattice symmetry breaking manifested as the softening of phonon modes can occur simultaneously, which makes it difficult to disentangle the origin of the transition8-14. Here, we report a condensed phase in low dimensional HfTe2, whereas angle-resolved photoemission spectroscopy (ARPES) measurements show a metal-insulator transition by lowering the temperature in single triatomic layer (TL) HfTe2. A full gap opening, renormalization of the bands, and emergence of replica bands at the M point are observed in the low temperatures, indicating formation of a CDW in the ground state.Raman spectroscopy shows no sign of lattice distortion within the detection limit. The results are corroborated by first-principles calculations, demonstrating the electronic origin of the CDW. By adding more layers, the phase transition is suppressed and completely destroyed at 3 TL because of the increased screening around the Fermi surface. Interestingly, a small amount of electron doping in 1 TL film during the growth significantly raises the transition temperature (TC), which is attributed to a reduced screening effect and a more balanced electron and hole carrier density. Our results indicate a CDW formation mechanism consistent with the excitonic insulator phase in low dimensional HfTe2 and open up opportunity for realization of novel quantum states based on exciton condensation.

cond-mat.mes-hall↗

arXiv2023

Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2

The interplay between strong correlations and topology can lead to the emergence of intriguing quantum states of matter. One well-known example is the fractional quantum Hall effect, where exotic electron fluids with fractionally charged excitations form in partially filled Landau levels. The emergence of topological moiré flat bands provides exciting opportunities to realize the lattice analogs of both the integer and fractional quantum Hall states without the need for an external magnetic field. These states are known as the integer and fractional quantum anomalous Hall (IQAH and FQAH) states. Here, we present direct transport evidence of the existence of both IQAH and FQAH states in twisted bilayer MoTe2 (AA stacked). At zero magnetic field, we observe well-quantized Hall resistance of h/e2 around moiré filling factor ν = -1 (corresponding to one hole per moiré unit cell), and nearly-quantized Hall resistance of 3h/2e2 around ν = -2/3, respectively. Concomitantly, the longitudinal resistance exhibits distinct minima around ν = -1 and -2/3. The application of an electric field induces topological quantum phase transition from the IQAH state to a charge transfer insulator at ν = -1, and from the FQAH state to a generalized Wigner crystal state, further transitioning to a metallic state at ν = -2/3. Our study paves the way for the investigation of fractionally charged excitations and anyonic statistics at zero magnetic field based on semiconductor moiré materials.

cond-mat.mes-hall↗