Stacking-order-dependent electronic properties of MoTe2/WSe2 moir\'e bilayers

Zhongdong Han; Wenjin Zhao; Eegene Clara Chung; Chia-Hao Lee; Zui Tao; Zhengchao Xia; Yichi Zhang; Yiyu Xia; Jekwan Lee; Bowen Shen; Ariana Ray; Yu-Tsun Shao; Tingxin Li; Shengwei Jiang; Yihang Zeng; Kenji Watanabe; Takashi Taniguchi; David Muller; Kin Fai Mak; Jie Shan

arXiv · 2605.21233

Stacking-order-dependent electronic properties of MoTe2/WSe2 moir\'e bilayers

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Abstract

Transition metal dichalcogenide (TMD) moir\'e bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved optical second harmonic generation (SHG) is the most used technique for stacking order characterization but unverified for most heterobilayers. Here we calibrate the optical SHG for angle-aligned MoTe2/WSe2 bilayers by the scanning transmission electron microscopy (STEM). We directly compare the transport and magnetic properties and the electronic phase diagram for two distinct stacking orders. With the calibrated stacking order assignment, we clarify the interpretation of earlier results, including the nature of the Chern insulator, mechanism of an electric-field-tuned metal-insulator transition at half band filling, and the Kondo lattice physics. Our work provides a consistent picture of the relation between the stacking order and the electronic properties of MoTe2/WSe2 moir\'e bilayers.

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Zhongdong Han, Wenjin Zhao, Eegene Clara Chung, Chia-Hao Lee, Zui Tao, Zhengchao Xia, Yichi Zhang, Yiyu Xia, Jekwan Lee, Bowen Shen, Ariana Ray, Yu-Tsun Shao, Tingxin Li, Shengwei Jiang, Yihang Zeng, Kenji Watanabe, Takashi Taniguchi, David Muller, Kin Fai Mak, Jie Shan. 2026-05-20. Stacking-order-dependent electronic properties of MoTe2/WSe2 moir\'e bilayers. https://arxiv.org/abs/2605.21233

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