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Shi Liu

Publications and source records attributed to Shi Liu.

At least 91 records · Page 5Linked to original sources

Modular development of deep potential for complex solid solutions

The multicomponent oxide solid solution is a versatile platform to tune the delicate balance between competing spin, charge, orbital, and lattice degrees of freedom for materials design and discovery. The development of compositionally complex oxides with superior functional properties has been largely empirical and serendipitous, in part due to the exceedingly complex chemistry and structure of solid solutions that span a range of length scales. The classical molecular dynamics (MD), as a powerful statistical method to investigate materials properties over large spatial and temporal scales, often plays a secondary role in computer-aided materials discovery because of the limited availability and accuracy of classical force fields. Here, we introduce the strategy of ``modular developing deep potential" (ModDP) that enables a systematic development and improvement of deep neural network-based model potential, termed as deep potential, for complex solid solutions with minimum human intervention. The converged training database associated with an end-member material is treated as an independent module and is reused to train the deep potential of solid solutions via a concurrent learning procedure. We apply ModDP to obtain classical force fields of two technologically important solid solutions, Pb$_x$Sr$_{1-x}$TiO$_3$ and Hf$_x$Zr$_{1-x}$O$_2$. For both materials systems, a single model potential is capable of predicting various properties of solid solutions including temperature-driven and composition-driven phase transitions over a wide range of compositions. In particular, the deep potential of Pb$_x$Sr$_{1-x}$TiO$_3$ reproduces a few known topological textures such as polar vortex lattice and electric dipole waves in PbTiO$_3$/SrTiO$_3$ superlattices, paving the way for MD investigations on the dynamics of topological structures in response to external stimuli.

cond-mat.mtrl-sci↗

Semiconducting nonperovskite ferroelectric oxynitride designed ab initio

Recent discovery of HfO2-based and nitride-based ferroelectrics that are compatible to the semiconductor manufacturing process have revitalized the field of ferroelectric-based nanoelectronics. Guided by a simple design principle of charge compensation and density functional theory calculations, we discover HfO2-like mixed-anion materials, TaON and NbON, can crystallize in the polar Pca21 phase with a strong thermodynamic driving force to adopt anion ordering spontaneously. Both oxynitrides possess large remnant polarization, low switching barriers, and unconventional negative piezoelectric effect, making them promising piezoelectrics and ferroelectrics. Distinct from HfO2 that has a wide band gap, both TaON and NbON can absorb visible light and have high charge carrier mobilities, suitable for ferroelectric photovoltaic and photocatalytic applications. This new class of multifunctional nonperovskite oxynitride containing economical and environmentally benign elements offer a platform to design and optimize high-performing ferroelectric semiconductors for integrated systems.

cond-mat.mtrl-sci↗

Structural Polymorphism Kinetics Promoted by Charged Oxygen Vacancies in HfO$_2$

Defects such as oxygen vacancy are widely considered to be critical for the performance of HfO2-based devices, and yet atomistic mechanisms underlying various exotic effects such as wake-up and fluid imprint remain elusive. Here, guided by a lattice-mode-matching criterion, we systematically study the phase transitions between different polymorphs of hafnia under the influences of neutral and positively charged oxygen vacancies by mapping out the minimum energy pathways using a first-principles-based variable-cell nudged elastic band technique. We find that the positively charged oxygen vacancy can substantially promote the transition of various nonpolar phases to the polar phase kinetically, enabled by a transient high-energy tetragonal phase and extreme charge-carrier-inert ferroelectricity of the polar $Pca2_1$ phase. The intricate coupling between structural polymorphism kinetics and the charge state of the oxygen vacancy has important implications for the origin of ferroelectricity in HfO$_2$-based thin films as well as wake-up, fluid imprint, and inertial switching.

cond-mat.mtrl-sci↗

XNLI: Explaining and Diagnosing NLI-based Visual Data Analysis

Natural language interfaces (NLIs) enable users to flexibly specify analytical intentions in data visualization. However, diagnosing the visualization results without understanding the underlying generation process is challenging. Our research explores how to provide explanations for NLIs to help users locate the problems and further revise the queries. We present XNLI, an explainable NLI system for visual data analysis. The system introduces a Provenance Generator to reveal the detailed process of visual transformations, a suite of interactive widgets to support error adjustments, and a Hint Generator to provide query revision hints based on the analysis of user queries and interactions. Two usage scenarios of XNLI and a user study verify the effectiveness and usability of the system. Results suggest that XNLI can significantly enhance task accuracy without interrupting the NLI-based analysis process.

cs.HC↗

Depolarization Induced III-V Triatomic Layers with Tristable Polarization States

The integration of ferroelectrics that exhibit high dielectric, piezoelectric, and thermal susceptibilities with the mainstream semiconductor industry will enable novel device types for widespread applications, and yet there are few silicon-compatible ferroelectrics suitable for device downscaling. We demonstrate with first-principles calculations that the enhanced depolarization field at the nanoscale can be utilized to soften unswitchable wurtzite III-V semiconductors, resulting in ultrathin two-dimensional (2D) sheets possessing reversible polarization states. A 2D sheet of AlSb consisting of three atomic planes is identified to host both ferroelectricity and antiferroelectricity, and the tristate switching is accompanied by a metal-semiconductor transition. The thermodynamics stability and potential synthesizability of the triatomic layer are corroborated with phonon spectrum calculations, ab initio molecular dynamics, and variable-composition evolutionary structure search. We propose a 2D AlSb-based homojunction field effect transistor that supports three distinct and nonvolatile resistance states. This new class of III-V semiconductor-derived 2D materials with dual ferroelectricity and antiferroelectricity opens up the possibility for nonvolatile multibit-based integrated nanoelectronics.

cond-mat.mtrl-sci↗

One Dimensional Ferroelectric Nanothreads with Axial and Radial Polarization

Long-range ferroelectric crystalline order usually fades away as the spatial dimension decreases, hence there are few two-dimensional (2D) ferroelectrics and far fewer one-dimensional (1D) ferroelectrics. Due to the depolarization field, low-dimensional ferroelectrics rarely possess the polarization along the direction of reduced dimensionality. Here, using first-principles density functional theory, we explore the structural evolution of nanoribbons of varying widths constructed by cutting the 2D sheet of ferroelectric $α$-III$_2$IV$_3$ (III=Al, Ga, In; VI=S, Se, Te). We discover a one-dimensional ferroelectric nanothread (1DFENT) of ultrasmall diameter with both axial and radial polarization, potentially enabling ultra-dense data storage with a 1D domain of just three unit cells being the functional unit. The polarization in 1DFENT of Ga$_2$Se$_3$ exhibits an unusual piezoelectric response: a stretching stress along the axial direction will increase both axial and radial polarization, referred to as auxetic piezoelectric effect. Utilizing the intrinsically flat electronic bands, we demonstrate the coexistence of ferroelectricity and ferromagnetism in 1DFENT and a counterintuitive charge-doping-induced metal-to-insulator transition. The 1DFENT with both axial and radial polarization offers a counterexample to the Mermin--Wagner theorem in 1D and suggests a new platform for the design of ultrahigh-density memory and the exploration of exotic states of matter.

cond-mat.mtrl-sci↗

Canvas: Isolated and Adaptive Swapping for Multi-Applications on Remote Memory

Remote memory techniques for datacenter applications have recently gained a great deal of popularity. Existing remote memory techniques focus on the efficiency of a single application setting only. However, when multiple applications co-run on a remote-memory system, significant interference could occur, resulting in unexpected slowdowns even if the same amounts of physical resources are granted to each application. This slowdown stems from massive sharing in applications' swap data paths. Canvas is a redesigned swap system that fully isolates swap paths for remote-memory applications. Canvas allows each application to possess its dedicated swap partition, swap cache, prefetcher, and RDMA bandwidth. Swap isolation lays a foundation for adaptive optimization techniques based on each application's own access patterns and needs. We develop three such techniques: (1) adaptive swap entry allocation, (2) semantics-aware prefetching, and (3) two-dimensional RDMA scheduling. A thorough evaluation with a set of widely-deployed applications demonstrates that Canvas minimizes performance variation and dramatically reduces performance degradation.

cs.OS↗

Origin of ferroelectricity in magnesium doped zinc oxide

Recent experiments demonstrated robust ferroelectricity in Mg-doped ZnO (ZMO) of the wurtzite structure, hinting at a promising strategy to substantially expand the list of ferroelectrics by doping conventional piezoelectrics. We investigate the origin of ferroelectricity in ZMO with first-principles density functional theory (DFT). The general argument that the Mg alloying could soften the ionic potential energy surface of ZMO for polarization reversal is overly simplified. Our DFT calculations reveal that even at a high Mg concentration, the energy difference ($ΔU$) between the polar and nonpolar phases remains prohibitively large for ZMO systems when the strain is fixed to the polar phase. Interestingly, the magnitude of $ΔU$ becomes substantially smaller when the strain relaxation is allowed, approaching the value of typical perovskite ferroelectrics such as PbTiO$_3$ with increasing Mg doping concentrations. The enabled switchability of ZMO systems is attributed to a hexagonal phase of MgO that is much lower in energy than its wurtzite counterpart. Detailed orbital and bonding analysis supports that the intra-atomic $3d_{z^2}$-$4p_z$ orbital self-mixing of Zn plays an important role in stabilizing the polar wurtzite phase, the lack of which is responsible for the low-energy nonpolar hexagonal phase of MgO.

cond-mat.mtrl-sci↗

Onsite and intersite electronic correlations in the Hubbard model for halide perovskites

Halide perovskites (HPs) are widely viewed as promising photovoltaic and light-emitting materials for their suitable band gaps in the visible spectrum. Density functional theory (DFT) calculations employing (semi)local exchange-correlation functionals usually underestimate the band gaps for these systems. Accurate descriptions of the electronic structures of HPs often demand higher-order levels of theory such as the Heyd-Scuseria-Ernzerhof (HSE) hybrid density functional and GW approximations that are much more computationally expensive than standard DFT. Here, we investigate three representative types of HPs, ABX3 halide perovskites, vacancy-ordered double perovskites (VODPs), and bond disproportionated halide perovskites (BDHPs), using DFT+U+V with onsite U and intersite V Hubbard parameters computed self-consistently without a priori assumption. The inclusion of Hubbard corrections improves the band gap prediction accuracy for all three types of HPs to a similar level of advanced methods. Moreover, the self-consistent Hubbard U is a meaningful indicator of the true local charge state of multivalence metal atoms in HPs. The inclusion of the intersite Hubbard V is crucial to properly capture the hybridization between valence electrons on neighboring atoms in BDHPs that have breathing-mode distortions of halide octahedra. In particular, the simultaneous convergence of both Hubbard parameters and crystal geometry enables a band gap prediction accuracy superior to HSE for BDHPs but at a fraction of the cost. Our work highlights the importance of using self-consistent Huabbard parameters when dealing with HPs that often possess intricate competitions between onsite localization and intersite hybridization.

cond-mat.mtrl-sci↗

Three Dimensional Activity Volcano Plot under External Electric Field

An external electric field (EEF) can impact a broad range of catalytic processes beyond redox systems. Computational design of catalysts under EEFs targeting specific operation conditions essentially requires accurate predictions of the response of a complex physicochemical system to collective parameters such as EEF strength/direction and temperature. Here, we develop a first-principles-based multiscale approach that enables efficient EEF-dependent kinetic modeling of heterogeneous catalysis. Taking steam reforming of methanol as an example, we find that the methanol conversion rate exhibits strong nonlinear response to temperature and EEF, and the optimal field line and constant carbon concentration line defined in the temperature--EEF parameter space serve as powerful metrics for catalyst design. Assisted with a deep neural network, we establish a three-dimensional activity volcano plot under EEFs for thousands of metallic alloys.

cond-mat.mtrl-sci↗

Structural Phase Transitions in SrTiO3 from Deep Potential Molecular Dynamics

Strontium titanate (SrTiO3) is regarded as an essential material for oxide electronics. One of its many remarkable features is subtle structural phase transition, driven by antiferrodistortive lattice mode, from a high-temperature cubic phase to a low-temperature tetragonal phase. Classical molecular dynamics (MD) simulation is an efficient technique to reveal atomistic features of phase transition, but its application is often limited by the accuracy of empirical interatomic potentials. Here, we develop an accurate deep potential (DP) model of SrTiO3 based on a machine learning method using data from first-principles density functional theory (DFT) calculations. The DP model has DFT-level accuracy, capable of performing efficient MD simulations and accurate property predictions. Using the DP model, we investigate the temperature-driven cubic-to-tetragonal phase transition and construct the in-plane biaxial strain-temperature phase diagram of SrTiO3. The simulations demonstrate that strain-induced ferroelectric phase is characterized by two order parameters, ferroelectric distortion and antiferrodistortion, and the ferroelectric phase transition has both displacive and order-disorder characters. This works lays the foundation for the development of accurate DP models of other complex perovskite materials.

cond-mat.mtrl-sci↗

Two-dimensional ferroelectric metal for electrocatalysis

The coexistence of metallicity and ferroelectricity has been an intriguing and controversial phenomenon as these two material properties are considered incompatible in bulk. We clarify the concept of ferroelectric metal by revisiting the original definitions for ferroelectric and metal. Two-dimensional (2D) ferroelectrics with out-of-plane polarization can be engineered via layer stacking to a genuine ferroelectric metal characterized by switchable polarization and non-zero density of states at the Fermi level. We demonstrate that 2D ferroelectric metals can serve as electrically-tunable, high-quality electrocatalysts.

cond-mat.mtrl-sci↗

Accurate force field of two-dimensional ferroelectrics from deep learning

The discovery of two-dimensional (2D) ferroelectrics with switchable out-of-plane polarization such as monolayer $α$-In$_2$Se$_3$ offers a new avenue for ultrathin high-density ferroelectric-based nanoelectronics such as ferroelectric field effect transistors and memristors. The functionality of ferroelectrics depends critically on the dynamics of polarization switching in response to an external electric/stress field. Unlike the switching dynamics in bulk ferroelectrics that have been extensively studied, the mechanisms and dynamics of polarization switching in 2D remain largely unexplored. Molecular dynamics (MD) using classical force fields is a reliable and efficient method for large-scale simulations of dynamical processes with atomic resolution. Here we developed a deep neural network-based force field of monolayer In$_2$Se$_3$ using a concurrent learning procedure that efficiently updates the first-principles-based training database. The model potential has accuracy comparable with density functional theory (DFT), capable of predicting a range of thermodynamic properties of In$_2$Se$_3$ polymorphs and lattice dynamics of ferroelectric In$_2$Se$_3$. Pertinent to the switching dynamics, the model potential also reproduces the DFT kinetic pathways of polarization reversal and 180$^\circ$ domain wall motions. Moreover, isobaric-isothermal ensemble MD simulations predict a temperature-driven $α\rightarrow β$ phase transition at the single-layer limit, as revealed by both local atomic displacement and Steinhardt's bond orientational order parameter $Q_4$. Our work paves the way for further research on the dynamics of ferroelectric $α$-In$_2$Se$_3$ and related systems.

cond-mat.mtrl-sci↗

Two-dimensional multiferroic metal with voltage-tunable magnetization and metallicity

We design a multiferroic metal that combines seemingly incompatible ferromagnetism, ferroelectricity, and metallicity by hole doping a two-dimensional (2D) ferroelectric with high density of states near the Fermi level. The strong magnetoelectric effect is demonstrated in hole-doped and arsenic-doped monolayer α-In2Se3 using first-principles calculations. Taking advantage of the oppositely charged surfaces created by an out-of-plane polarization, the 2D magnetization and metallicity can be electrically switched on and off in an asymmetrically doped monolayer. The substitutional arsenic defect pair exhibits an intriguing electric field-tunable charge disproportionation process accompanied with an on-off switch of local magnetic moments. The charge ordering process can be controlled by tuning the relative strength of on-site Coulomb repulsion and defect dipole-polarization coupling via strain engineering. Our design principle relying on no transition metal broadens the materials design space for 2D multiferroic metals.

cond-mat.mtrl-sci↗

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

The discovery of ferroelectric HfO2 in thin films and more recently in bulk is an important breakthrough because of its silicon-compatibility and unexpectedly persistent polarization at low dimensions, but the origin of its ferroelectricity is still under debate. The stabilization of the metastable polar orthorhombic phase was often considered as the cumulative result of various extrinsic factors such as stress, grain boundary, and oxygen vacancies as well as phase transition kinetics during the annealing process. We propose a novel mechanism to stabilize the polar orthorhombic phase over the nonpolar monoclinic phase that is the bulk ground state. Our first-principles calculations demonstrate that the doubly positively charged oxygen vacancy, an overlooked defect but commonly presented in binary oxides, is critical for the stabilization of ferroelectric phase. The charge state of oxygen vacancy serves as a new degree of freedom to control the thermodynamic stability of competing phases of wide-band-gap oxides.

physics.comp-ph↗

On-demand quantum spin Hall insulators controlled by two-dimensional ferroelectricity

The coexistence of ferroelectric and topological orders in two-dimensional (2D) atomic crystals allows non-volatile and switchable quantum spin Hall states. Here we offer a general design principle for 2D bilayer heterostructures that can host ferroelectricity and nontrivial band topology simultaneously using only topologically trivial building blocks. The built-in electric field arising from the out-of-plane polarization across the heterostrucuture enables a robust control of the band gap size and band inversion strength, which can be utilized to manipulate topological phase transitions. Using first-principles calculations, we demonstrate a series of bilayer heterostructures are 2D ferroelectric topological insulators (2DFETIs) characterized with a direct coupling between band topology and polarization state. We propose a few 2DFETI-based quantum electronics including domain-wall quantum circuits and topological memristor.

cond-mat.mtrl-sci↗

Establishing quasi-linear quadrupole functional topology by oxygen-vacancy engineering at a ferroelectric domain wall

Oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to unique conductive, magnetic and even superconductive functionalities they induce. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects that enable unusual symmetries and are relevant for low-energy switching technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of oxygen vacancies has remained elusive. Here, stable individual oxygen vacancies were found and engineered in situ at domain walls of seminal titanate perovskite ferroics. The atomic-scale strain, electric-field, charge and dipole-moment distribution around these vacancies were characterized by combining advanced transmission electron microscopy and first-principle methodologies. 3-5 % tensile strain was observed at the immediate surrounding unit cells of the vacancies. The dipole-moment distribution around the vacancy was found to be an alternating head-to-head $-$ tail-to-tail $-$ head-to-head structure, giving rise to a quasi-linear quadrupole topology. Reduction of the nearby Ti ion as well as enhanced charging and electric-field concentration near the vacancy confirmed the quadrupole structure and illustrated its local effects on the electrical and structural properties. Significant intra-band states were found in the unit cell of the vacancies, proposing a meaningful domain-wall conductivity. Oxygen-vacancy engineering and controllable quadrupoles that enable pre-determining both atomic-scale and global functional properties offer a promising platform of electro-mechanical topological solitons and device miniaturization in metal oxides.

cond-mat.mtrl-sci↗

First-Principles Study of Two-Dimensional Ferroelectrics Using Self-Consistent Hubbard Parameters

The discovery of two-dimensional (2D) materials possessing switchable spontaneous polarization with atomic thickness opens up exciting opportunities to realize ultrathin, high-density electronic devices with potential applications ranging from memories and sensors to photocatalysis and solar cells. First-principles methods based on density functional theory (DFT) have facilitated the discovery and design of 2D ferroelectrics (FEs). However, DFT calculations employing local and semilocal exchange-correlation functionals failed to predict accurately the band gaps for this family of low-dimensional materials. Here, we present a DFT+$U$+$V$ study on 2D FEs represented by single-layer $α$-In$_2$Se$_3$ and its homologous III$_2$-VI$_3$ compounds with both out-of-plane and in-plane polarization, using Hubbard parameters computed from first-principles. We find that ACBN0, a pseudo-hybrid density functional that allows self-consistent determination of $U$ parameters, improves the prediction of band gaps for all investigated 2D FEs with a computational cost much lower than the hybrid density functional. The inter-site Coulomb interaction $V$ becomes critical for accurate descriptions of the electronic structures of van der Waals heterostructures such as bilayer In$_2$Se$_3$ and In$_2$Se$_3$/InTe. Pertinent to the study of FE-based catalysis, we find that the application of self-consistent $U$ corrections can strongly affect the adsorption energies of open-shell molecules on the polar surfaces of 2D FEs.

cond-mat.mtrl-sci↗