arXiv subjects

Shimpei Ono

Publications and source records attributed to Shimpei Ono.

At least 19 recordsLinked to original sources

arXiv2025

Reversible magneto ionics in crystallized W Co20Fe60B20 MgO HfO2 ultra-thin films with perpendicular magnetic anisotropy

We have investigated electric field (E-field) induced modulation of perpendicular magnetic anisotropy (PMA) in both amorphous and crystalline W/CoFeB/MgO/HfO2 ultra-thin films. We find that in the amorphous state, the E-field effect is volatile and reversible, which is consistent with the conventional electrostatic effect through charge accumulation and depletion. In the crystallized system annealed at 370°C, we find that two effects are at play, a non-volatile and reversible voltage-induced effect on PMA and an electrostatic response. We discuss these results in terms of higher oxygen mobility at the crystallized CoFeB-MgO interface, which induces a non-volatile magnetoionic response. Modulating PMA in crystallized CoFeB-MgO materials through ionic migration opens the path to integrating magneto-ionics in full magnetic tunnel junctions.

cond-mat.mtrl-sci↗

arXiv2024

Control of the magnetic anisotropy in multi-repeat Pt/Co/Al heterostructures using magneto-ionic gating

Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in Ta/Pt/[Co/Al/Pt]$_n$/Co/Al/AlO$_\text{x}$ multilayer stacks comprising $n +1$ Co layers and its impact on the magnetic properties of the multilayers. We demonstrate that the perpendicular magnetic anisotropy can be reversibly quenched through gate-driven oxidation of the intermediary Al layer between Co and AlO$_\text{x}$, enabling dynamic control of the magnetic layers contributing to the out-of-plane remanence - varying between $n$ and $n +1$. For multilayer configurations with $n = 2$ and $n = 4$, we observe reversible and non-volatile additions of 1/3 and 1/5, respectively, to the anomalous Hall effect amplitude based on the applied gate voltage. Magnetic imaging reveals that the gate-induced spin-reorientation transition occurs through the propagation of a single 90$^{\circ}$ magnetic domain wall separating the perpendicular and in-plane anisotropy states. In the 5-repetition multilayer, the modification leads to a doubling of the period of the magnetic domains at remanence. These results demonstrate that the magneto-ionic control of the anisotropy of a single magnetic layer can be used to control the magnetic properties of coupled multilayer systems, extending beyond the gating effects on a single magnetic layer.

cond-mat.mtrl-sci↗

arXiv2024

Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics

Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying -2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias.

cond-mat.mtrl-sci↗

arXiv2023

Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets

The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems.

cond-mat.mes-hall↗

arXiv2019

Hidden magnetism at the pseudogap critical point of a high temperature superconductor

The mysterious pseudogap phase of cuprate superconductors ends at a critical hole doping level p* but the nature of the ground state below p* is still debated. Here, we show that the genuine nature of the magnetic ground state in La2-xSrxCuO4 is hidden by competing effects from superconductivity: applying intense magnetic fields to quench superconductivity, we uncover the presence of glassy antiferromagnetic order up to the pseudogap boundary p* ~ 0.19, and not above. There is thus a quantum phase transition at p*, which is likely to underlie highfield observations of a fundamental change in electronic properties across p*. Furthermore, the continuous presence of quasi-static moments from the insulator up to p* suggests that the physics of the doped Mott insulator is relevant through the entire pseudogap regime and might be more fundamentally driving the transition at p* than just spin or charge ordering.

cond-mat.supr-con↗

arXiv2019

Giant thermal Hall conductivity from neutral excitations in the pseudogap phase of cuprates

The nature of the pseudogap phase of cuprates remains a major puzzle. Although there are indications that this phase breaks various symmetries, there is no consensus on its fundamental nature. Although Fermi-surface, transport and thermodynamic signatures of the pseudogap phase are reminiscent of a transition into a phase with antiferromagnetic order, there is no evidence for an associated long-range magnetic order. Here we report measurements of the thermal Hall conductivity $κ_{\rm xy}$ in the normal state of four different cuprates (Nd-LSCO, Eu-LSCO, LSCO, and Bi2201) and show that a large negative $κ_{\rm xy}$ signal is a property of the pseudogap phase, appearing with the onset of that phase at the critical doping $p^*$. Since it is not due to charge carriers -- as it persists when the material becomes an insulator, at low doping -- or magnons -- as it exists in the absence of magnetic order -- or phonons -- since skew scattering is very weak, we attribute this $κ_{\rm xy}$ signal to exotic neutral excitations, presumably with spin chirality. The thermal Hall conductivity in the pseudogap phase of cuprates is reminiscent of that found in insulators with spin-liquid states. In the Mott insulator LCO, it attains the highest known magnitude of any insulator.

cond-mat.supr-con↗

arXiv2018

Ionic liquid gating of InAs nanowire-based field effect transistors

We report the operation of a field-effect transistor based on a single InAs nanowire gated by an ionic liquid. Liquid gating yields very efficient carrier modulation with a transconductance value thirty time larger than standard back gating with the SiO2 /Si++ substrate. Thanks to this wide modulation we show the controlled evolution from semiconductor to metallic-like behavior in the nanowire. This work provides the first systematic study of ionic-liquid gating in electronic devices based on individual III-V semiconductor nanowires: we argue this architecture opens the way to a wide range of fundamental and applied studies from the phase-transitions to bioelectronics.

cond-mat.mes-hall↗

arXiv2018

Electric-field control of magnetism in few-layered van der Waals magnet

Manipulating quantum state via electrostatic gating has been intriguing for many model systems in nanoelectronics. When it comes to the question of controlling the electron spins, more specifically, the magnetism of a system, tuning with electric field has been proven to be elusive. Recently, magnetic layered semiconductors have attracted much attention due to their emerging new physical phenomena. However, challenges still remain in the demonstration of a gate controllable magnetism based on them. Here, we show that, via ionic gating, strong field effect can be observed in few-layered semiconducting Cr$_{2}$Ge$_{2}$Te$_{6}$ devices. At different gate doping, micro-area Kerr measurements in the studied devices demonstrate tunable magnetization loops below the Curie temperature, which is tentatively attributed to the moment re-balance in the spin-polarized band structure. Our findings of electric-field controlled magnetism in van der Waals magnets pave the way for potential applications in new generation magnetic memory storage, sensors, and spintronics.

cond-mat.mes-hall↗

arXiv2013

Ubiquitous Interplay between Charge Ordering and High-Temperature Superconductivity in Cuprates

Besides superconductivity, copper-oxide high temperature superconductors are susceptible to other types of ordering. We use scanning tunneling microscopy and resonant elastic x-ray scattering measurements to establish the formation of charge ordering in the high-temperature superconductor Bi2Sr2CaCu2O8+x. Depending on the hole concentration, the charge ordering in this system occurs with the same period as those found in Y-based or La-based cuprates, and displays the analogous competition with superconductivity. These results indicate the similarity of charge organization competing with superconductivity across different families of cuprates. We observe this charge ordering to leave a distinct electron-hole asymmetric signature (and a broad resonance centered at +20 meV) in spectroscopic measurements, thereby indicating that it is likely related to the organization of holes in a doped Mott insulator.

cond-mat.supr-con↗

arXiv2013

Detection of electronic nematicity using scanning tunneling microscopy

Electronic nematic phases have been proposed to occur in various correlated electron systems and were recently claimed to have been detected in scanning tunneling microscopy (STM) conductance maps of the pseudogap states of the cuprate high-temperature superconductor Bi2Sr2CaCu2O8+x (Bi-2212). We investigate the influence of anisotropic STM tip structures on such measurements and establish, with a model calculation, the presence of a tunneling interference effect within an STM junction that induces energy-dependent symmetry-breaking features in the conductance maps. We experimentally confirm this phenomenon on different correlated electron systems, including measurements in the pseudogap state of Bi-2212, showing that the apparent nematic behavior of the imaged crystal lattice is likely not due to nematic order but is related to how a realistic STM tip probes the band structure of a material. We further establish that this interference effect can be used as a sensitive probe of changes in the momentum structure of the sample's quasiparticles as a function of energy.

cond-mat.str-el↗

arXiv2012

Band-Like Electron Transport in Organic Transistors and Implication of the Molecular Structure for Performance Optimization

Single-crystal organic field-effect transistors (OFETs) based on p-channel molecular semiconductors have led to breakthrough carrier mobilities and to the observation of band-like transport. These results represent the limit in our quest for the ultimate OFET performance. However, band-like transport has not been reported for n-channel OFETs and, for p-channel transistors, it is not understood why it occurs only for certain molecular materials. Here we report band-like electron transport for n-channel OFETs based on PDIF-CN2 single-crystals. Devices with different gate dielectrics - vacuum, Cytop, PMMA - are compared and we find that the performance is suppressed for those with larger dielectric constant. This phenomenon parallels that observed for holes in p-channel OFETs, however, the magnitude of the suppression is smaller, an effect that can be rationalized by the semiconductor molecular structure and crystal packing. A quantitative analysis of our findings, together with results on different high-quality p-channel transistors, indicates the importance of the interplay between the semiconductor molecular polarizability and the structure of the charge transport layers in the crystal, as a key factor enabling band-like transport. Based on these considerations, we suggest unprecedented structure-property relationships useful for performance optimization of high-mobility organic transistors.

cond-mat.mtrl-sci↗

arXiv2010

Appearance of fluctuating stripes at the onset of the pseudogap in the high-Tc Superconductor Bi2Sr2CaCu2O8+x

Doped Mott insulators have been shown to have a strong propensity to form patterns of holes and spins often referred to as stripes. In copper-oxides, doping also gives rise to the pseudogap state, which transforms into a high temperature superconductor with sufficient doping or by reducing the temperature. A long standing question has been the interplay between pseudogap, which is generic to all hole-doped cuprates, and stripes, whose static form occurs in only one family of cuprates over a narrow range of the phase diagram. Here we examine the spatial reorganization of electronic states with the onset of the pseudogap state at T* in the high-temperature superconductor Bi2Sr2CaCu2O8+x using spectroscopic mapping with the scanning tunneling microscope (STM). We find that the onset of the pseudogap phase coincides with the appearance of electronic patterns that have the predicted characteristics of fluctuating stripes. As expected, the stripe patterns are strongest when the hole concentration in the CuO2 planes is close to 1/8 (per Cu). While demonstrating that the fluctuating stripes emerge with the onset of the pseudogap state and occur over a large part of the cuprate phase diagram, our experiments indicate that they are a consequence of pseudogap behavior rather than its cause.

cond-mat.supr-con↗

arXiv2010

Electron-boson glue function derived from electronic Raman scattering

Raman scattering cross sections depend on photon polarization. In the cuprates nodal and antinodal directions are weighted more strongly in $B_{2g}$ and $B_{1g}$ symmetry, respectively. On the other hand in angle-resolved photoemission spectroscopy (ARPES), electronic properties are measured along well-defined directions in momentum space rather than their weighted averages. In contrast, the optical conductivity involves a momentum average over the entire Brillouin zone. Newly measured Raman response data on high-quality Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals up to high energies have been inverted using a modified maximum entropy inversion technique to extract from $B_{1g}$ and $B_{2g}$ Raman data corresponding electron-boson spectral densities (glue) are compared to the results obtained with known ARPES and optical inversions. We find that the $B_{2g}$ spectrum agrees qualitatively with nodal direction ARPES while the $B_{1g}$ looks more like the optical spectrum. A large peak around $30 - 40\,$meV in $B_{1g}$, much less prominent in $B_{2g}$, is taken as support for the importance of $(π,π)$ scattering at this frequency.

cond-mat.supr-con↗

arXiv2010

Quantitative comparison of single- and two-particle properties in the cuprates

We explore the strong variations of the electronic properties of copper-oxygen compounds across the doping phase diagram in a quantitative way. To this end we calculate the electronic Raman response on the basis of results from angle-resolved photoemission spectroscopy (ARPES). In the limits of our approximations we find agreement on the overdoped side and pronounced discrepancies at lower doping. In contrast to the successful approach for the transport properties at low energies, the Raman and the ARPES data cannot be reconciled by adding angle-dependent momentum scattering. We discuss possible routes towards an explanation of the suppression of spectral weight close to the $(π,0)$ points which sets in abruptly close to 21% doping.

cond-mat.supr-con↗

arXiv2010

Stability of exfoliated Bi$_2$Sr$_2$Dy$_x$Ca$_{1-x}$Cu$_2$O$_{8+δ}$ studied by Raman microscopy

Nanometer thick cuprates are an appealing platform for devices as well as exploring the roles of dimensionality, disorder, and free carrier density in these compounds. To this end we have produced exfoliated crystals of Bi2Sr2CaCu2O8 on oxidized silicon substrates. The exfoliated crystals were characterized via Atomic Force and polarized Raman microscopies. Proper procedures for production, handling and monitoring of these thin oxides are described. Subtle differences between the exfoliated and bulk crystals are also discussed.

cond-mat.supr-con↗

arXiv2010

Nanoscale Proximity Effect in the High Temperature Superconductor Bi-2212

High temperature cuprate superconductors exhibit extremely local nanoscale phenomena and strong sensitivity to doping. While other experiments have looked at nanoscale interfaces between layers of different dopings, we focus on the interplay between naturally inhomogeneous nanoscale regions. Using scanning tunneling microscopy to carefully track the same region of the sample as a function of temperature, we show that regions with weak superconductivity can persist to elevated temperatures if bordered by regions of strong superconductivity. This suggests that it may be possible to increase the maximum possible transition temperature by controlling the distribution of dopants.

cond-mat.supr-con↗

arXiv2009

Diamagnetism and Cooper pairing above $T_c$ in cuprates

In the cuprate superconductors, Nernst and torque magnetization experiments have provided evidence that the disappearance of the Meissner effect at $T_c$ is caused by the loss of long-range phase coherence, rather than the vanishing of the pair condensate. Here we report a series of torque magnetization measurements on single crystals of $\mathrm{La_{2-x}Sr_xCuO_4}$ (LSCO), $\mathrm{Bi_2Sr_{2-y}La_yCuO_6}$ (Bi 2201), $\mathrm{Bi_2Sr_2CaCu_2O_{8+δ}}$ (Bi 2212) and optimal $\mathrm{YBa_2Cu_3O_7}$. Some of the measurements were taken to fields as high as 45 T. Focusing on the magnetization above $T_c$, we show that the diamagnetic term $M_d$ appears at an onset temperature $T^M_{onset}$ high above $T_c$. We construct the phase diagram of both LSCO and Bi 2201 and show that $T^M_{onset}$ agrees with the onset temperature of the vortex Nernst signal $T^ν_{onset}$. Our results provide thermodynamic evidence against a recent proposal that the high-temperature Nernst signal in LSCO arises from a quasiparticle contribution in a charge-ordered state.

cond-mat.supr-con↗

arXiv2009

Extending Universal Nodal Excitations Optimizes Superconductivity in Bi2Sr2CaCu2O8+d

Understanding the mechanism by which d-wave superconductivity in the cuprates emerges and is optimized by doping the Mott insulator is one of the major outstanding problems in condensed matter physics. Our high-resolution scanning tunneling microscopy measurements of the high transition temperature (Tc) superconductor Bi2Sr2CaCu2O8+d show that samples with different Tcs in the low doping regime follow a remarkably universal d-wave low energy excitation spectrum, indicating a doping independent nodal gap. We demonstrate that Tc instead correlates with the fraction of the Fermi surface over which the samples exhibit the universal spectrum. Optimal Tc is achieved when all parts of the Fermi surface follow this universal behavior. Increasing temperature above Tc turns the universal spectrum into an arc of gapless excitations, while overdoping breaks down the universal nodal behavior.

cond-mat.supr-con↗