arXiv subjects

Shishen Yan

Publications and source records attributed to Shishen Yan.

At least 19 recordsLinked to original sources

arXiv2026

Engineering Molecular Rectification: Mechanisms, Modulation Strategies, and Device Integration

Molecular rectifiers, as prototypical components of molecular electronics, present unique opportunities for pushing device miniaturization to its ultimate limits. Nevertheless, challenges including limited rectification ratios (RR), insufficient robustness, and poor reproducibility impede their practical deployment. To make molecular rectifiers competitive with silicon-based devices, it is important to fully understand the design principles and fabrication methods from both mechanistic and experimental perspectives. By holistically considering the transport mechanisms, modulation strategies, fabrication, characterization techniques, and theoretical simulations, this review provides a comprehensive overview of molecular rectifiers. Representative examples of conceptually significant and high-performance molecular rectifier systems are highlighted to illustrate the relationships between rectification mechanisms, molecular design strategies, and device realization. Building on these discussions, we present an outlook for current bottlenecks and future directions to guide the development of molecular rectifiers. This review aims to serve as both a conceptual framework and a technical reference for researchers working at the intersection of molecular electronics and nanoscale device engineering in the post-CMOS era.

cond-mat.mtrl-sci↗

arXiv2026

Weak Magnetic Sensing via Floquet Driving in an Active Cavity Magnon Coupled System

While significant advancements have been made in weak magnetic field detection, conventional high-sensitivity techniques are often limited by requirements for cryogenic operation or bulky setups. In this work, we develop a sensitive alternating magnetic field sensor based on a coupled system of an active microwave cavity and yttrium iron garnet (YIG), with the components implemented on printed circuit boards (PCBs). By introducing electrically tunable gain to compensate for cavity losses, we substantially improve both the quality factor and the signal intensity. Under the coupled system, Floquet modulation is induced by the alternating magnetic field, allowing for weak field detection by driving a specific hybrid mode and measuring the resulting Floquet sidebands. This miniaturized device operates at room temperature, achieving a detection limit of 121 pT/\sqrt{Hz}.

cond-mat.mes-hall↗

arXiv2025

A voltage-responsive strongly dipolar-coupled macrospin network with emergent dynamics for computing

Emergent behavior, which arises from local interactions between simple elements, is pervasive in nature. It underlies the energy-efficient computing in our brains. However, realizing such dynamics in artificial materials, particularly under low-energy stimuli, remains a fundamental challenge. While dipole-dipole interactions are typically suppressed in magnetic storage, here we harness and amplify them to construct a strongly dipolar-coupled network of SmCo5 macrospins at wafer scale, which can exhibit intrinsic interaction-driven collective dynamics in response to voltage pulses. The network combines three essential ingredients: strong dipolar coupling by large single-domain macrospin, giant voltage control of coercivity over nearly 1000-fold, and disordered network topology with frustrated Ising-like energy landscape. When stimulated by 1 V pulses, the network enters a regime where interaction-driven magnetic behaviors emerge, including spontaneous demagnetization, greatly enhanced magnetization modulation, reversible freeze and resume evolution and stochastic convergence toward low-energy magnetic configurations. All these behaviors are completely absent at the single-nanomagnet level. Furthermore, by constructing micromagnetic models of the strongly dipolar-coupled macrospin networks, we show that the resulting nonlinear, high-dimensional collective dynamics, intrinsic to strongly-interacting systems, can enable accurate chaotic Mackey-Glass prediction and multiclass drone-signal classification. Our work establishes the voltage-responsive strongly-coupled SmCo5 network as a mesoscopic platform for probing emergent magnetic dynamics previously inaccessible under ambient conditions. It also suggests a fundamental distinct route towards scalable, low-voltage computing, one rooted in native physical interaction-driven collective dynamics at the network level.

cond-mat.mtrl-sci↗

arXiv2025

Negative Charge Transfer: Ground State Precursor towards High Energy Batteries

Modern energy applications, especially electric vehicles, demand high energy batteries. However, despite decades of intensive efforts, the highest energy density and commercially viable batteries are still based on LiCoO2, the very first generation of cathode materials. The technical bottleneck is the stability of oxide-based cathodes at high operating voltages. The fundamental puzzle is that we actually never understood the redox mechanism of LiCoO2. Conventional wisdom generally defines redox to be centered on cations at low voltages, and on anions, i.e. oxygen, at high voltages by forming oxidized chemical states like O2 or peroxo-species. Here, through in-situ and ex-situ spectroscopy coupled with theoretical calculations, we show that high-energy layered cathodes, represented by LiCoO2 and LiNiO2, operate through enhancement of negative charge transfer (NCT) ground states upon charging throughout the whole voltage range - i.e., NCT evolution itself is the intrinsic redox mechanism regardless of voltage ranges. NCT inherently engages high covalency and oxygen holes, leading to optimized performance without conventional redox centers in LiCoO2. The level of NCT, i.e., number of ligand holes, naturally explains many seemingly controversial results. The redefinition of redox mechanism reveals the pathway toward viable high energy battery electrodes.

cond-mat.mtrl-sci↗

arXiv2025

Coexistence and tunability of orbital and spin Hall effects in RuO$_2$

Altermagnetic materials, especially RuO$_2$, have recently attracted considerable attention for their unique magnetic properties and energy-efficient spintronic applications. However, recent experimental studies have reported highly conflicting signatures regarding altermagnetic spin splitting and charge--spin interconversion (CSI) in RuO$_2$. While some experiments link efficient CSI to non-relativistic altermagnetic spin-splitting effects, others observe large CSI signals in non-spin-splitting RuO$_2$, which are instead explained by relativistic inverse spin Hall effects. In this work, based on first-principles calculations, we reveal that these controversial experimental results originate from a phase-dependent coexistence and relative dominance of the orbital Hall effect (OHE) and spin Hall effect (SHE) in RuO$_2$. We systematically investigate the OHE and SHE in both altermagnetic and nonmagnetic phases of RuO$_2$. Our results show that the altermagnetic state hosts a giant OHE that exceeds the SHE by two orders of magnitude and carries an opposite sign. This dominant OHE can generate experimentally observed "SHE-like" voltages through orbital-to-spin conversion, explaining previously reported altermagnetic CSI signals. In contrast, OHE of nonmagnetic RuO$_2$ is suppressed and a large relativistic SHE emerges, in agreement with recent angle-resolved photoemission and spin-pumping experiments. Finally, we demonstrate that the coexistence of OHE and SHE is tunable via chemical doping, enabling on-demand modulation of CSI in in RuO$_2$. Our work provides a new physical mechanism for understanding CSI in RuO$_2$ and highlights the central role of orbital transport.

cond-mat.mtrl-sci↗

arXiv2025

Ultrasensitive Magnetometer based on Cusp Points of the Photon-Magnon Synchronization Mode

Ultrasensitive magnetometers based on spin resonances have led to remarkable achievements. However, the gyromagnetic ratios of these spin resonances that determine the responsivity of magnetometers to weak magnetic fields are inherently constrained by the Land$\acute{e}$ g-factor of particles, such as the electron, with a constant gyromagnetic ratio of $\gamma_e=2\pi\times28$ GHz/T. Here, we demonstrate an ultrasensitive magnetometer based on the cusp point (CP) of photon-magnon synchronization modes (PMSMs). The PMSM's gyromagnetic ratio at the CP is enhanced to $37\gamma_e$ and further amplified to $236\gamma_e$ by utilizing the sixth-order oscillating mode of the PMSM. Moreover, the emission linewidth of the PMSM can be reduced to 0.06 Hz, resulting in excellent sensitivity to weak magnetic fields. These outstanding properties position our magnetometer to potentially achieve superior sensitivity to conventional magnetometers. Our work introduces a cost-effective prototype for the next generation of magnetometry, and may advance scientific research and technologies that rely on ultrasensitive magnetic field detection.

cond-mat.mes-hall↗

arXiv2025

Tailoring spin reorientation and magnetic interaction for room-temperature spintronics in Tb-Doped SmFeO3 single crystal

Selective doping with different R-site ions in rare-earth perovskite RFeO3 compounds offers an effective way to achieve atomic-scale tuning of the complex exchange interactions. In this study, the spin reorientation temperature of Tb-doped SmFeO3 (Sm0.7Tb0.3FeO3) single crystal is lowered to approximately 350 K, making it more suitable for room-temperature applications. Notably, the magnetic compensation point is absent at low temperatures, and both R3+ and Fe3+ ion moments can be fully saturated under high magnetic fields, suggesting that Tb3+ doping drives the R3+ and Fe3+ sublattices toward ferromagnetic coupling. Moreover, the hysteresis loop along the a-axis transitions from a double triangle shape below the spin reorientation temperature to a rectangular shape above the spin reorientation temperature, and the nucleation field exhibits a strong dependence on both the measurement temperature and the maximum applied magnetic field. Above results can be explained by a modified two-domain model with mean field correction. The results of magnetic domain measurements indicate that the emergence of the double-triangular hysteresis loop is jointly determined by domain wall motion and the nonlinear response of the parasitic magnetic moment along the a-axis. These findings provide valuable insights and new materials for advancing the use of RFeO3 compounds in spintronics.

cond-mat.mtrl-sci↗

arXiv2021

In Operando magnetometry study on the charge storage mechanism of SnCo alloy lithium ion batteries

In view of the long-standing controversy over the reversibility of transition metals in Sn-based alloys as anode for Li-ion batteries, an in situ real-time magnetic monitoring method was used to investigate the evolution of Sn-Co intermetallic during the electrochemical cycling. Sn-Co alloy film anodes with different compositions were prepared via magnetron sputtering without using binders and conductive additives. The magnetic responses showed that the Co particles liberated by Li insertion recombine fully with Sn during the delithiation to reform Sn-Co intermetallic into stannum richer phases Sn7Co3. However, as the Co content increases, it can only recombine partially with Sn into cobalt richer phases Sn3Co7. The unconverted Co particles may form a dense barrier layer and prevent the full reaction of Li with all the Sn in the anode, leading to lower capacities. These critical results shed light on understanding the reaction mechanism of transition metals, and provide valuable insights toward the design of high-performance Sn alloy based anodes.

cond-mat.mtrl-sci↗

arXiv2019

Enhanced spin transfer torque in platinum/ferromagnetic-metal structures by optimizing the platinum thickness

Spin transfer torque (STT) driven by a charge current plays a key role in magnetization switching in heavy-metal/ferromagnetic-metal structures. The STT efficiency defined by the ratio between the effective field due to STT and the current density, is required to be improved to reduce energy compulsions in the STT-based spintronic devices. In this work, using the harmonic Hall measurement method, we experimentally studied the STT efficiency in platinum(Pt)/FM structures as a function of the Pt thickness. We found that the STT efficiency strongly depends on the Pt thickness and reaches a maximum value of 4.259 mT/($10^6$A/$cm^{2}$) for the 1.8-nm-thickness Pt sample. This result indicates that competition between spin Hall effect (SHE) and Rashba effect as well as spin diffusion process across the Pt layer determines the Pt thickness for the maximum STT efficiency. We demonstrated the role played by the spin diffusion besides the spin current generation mechanisms in improvement of the STT efficiency, which is helpful in designing STT-based devices.

cond-mat.mtrl-sci↗

arXiv2019

Electrical control of spin mixing conductance in a Y$_3$Fe$_5$O$_{12}$/Platinum bilayer

We report a tunable spin mixing conductance, up to $\pm 22\%$, in a Y${}_{3}$Fe${}_{5}$O${}_{12}$/Platinum (YIG/Pt) bilayer.This control is achieved by applying a gate voltage with an ionic gate technique, which exhibits a gate-dependent ferromagnetic resonance line width. Furthermore, we observed a gate-dependent spin pumping and spin Hall angle in the Pt layer, which is also tunable up to $\pm$ 13.6\%. This work experimentally demonstrates spin current control through spin pumping and a gate voltage in a YIG/Pt bilayer, demonstrating the crucial role of the interfacial charge density for the spin transport properties in magnetic insulator/heavy metal bilayers.

cond-mat.mes-hall↗

arXiv2019

Enhanced Interfacial Dzyaloshinskii-Moriya Interaction in annealed Pt/Co/MgO structures

The interfacial Dzyaloshinskii-Moriya interaction (iDMI) is attracting great interests for spintronics. An iDMI constant larger than 3 mJ/m^2 is expected to minimize the size of skyrmions and to optimize the DW dynamics. In this study, we experimentally demonstrate an enhanced iDMI in Pt/Co/X/MgO ultra-thin film structures with perpendicular magnetization. The iDMI constants were measured using a field-driven creep regime domain expansion method. The enhancement of iDMI with an atomically thin insertion of Ta and Mg is comprehensively understood with the help of ab-initio calculations. Thermal annealing has been used to crystallize the MgO thin layer for improving tunneling magneto-resistance (TMR), but interestingly it also provides a further increase of the iDMI constant. An increase of the iDMI constant up to 3.3 mJ/m^2 is shown, which could be promising for the scaling down of skyrmion electronics.

cond-mat.mes-hall↗

arXiv2018

Fingerprint oxygen redox reactions in batteries through high-efficiency mapping of resonant inelastic X-ray scattering (mRIXS)

Realizing reversible reduction-oxidation (Redox) reactions of lattice oxygen in batteries is a promising way to improve the energy and power density. However, conventional oxygen absorption spectroscopy fails to distinguish the critical oxygen chemistry in oxide-based battery electrodes. Therefore, high-efficiency full-range mapping of resonant inelastic X-ray scattering (mRIXS) has been developed as a reliable probe of oxygen redox reactions. Here, based on mRIXS results collected from a series of Li1.17Ni0.21Co0.08Mn0.54O2 electrodes at different electrochemical states and its comparison with peroxides, we provide a comprehensive analysis of five components observed in the mRIXS results. While almost all the components change upon electrochemical cycling, comparison with peroxide species show that only two evolving features correspond to the critical oxidized oxygen states. One is a specific feature at 531.0eV excitation and 523.7eV emission energy, the other is a low-energy loss feature. We show that both features evolve with electrochemical cycling of Li1.17Ni0.21Co0.08Mn0.54O2 electrodes, and could be used for characterizing oxygen redox states in battery electrodes. This work is the first benchmark for a complete assignment of all the important mRIXS features collected from battery materials, which provides guidelines for future studies in characterization, analysis and theoretical calculation for probing and understanding oxygen redox reactions.

physics.chem-ph↗

arXiv2018

High Reversibility of Lattice Oxygen Redox in Na-ion and Li-ion Batteries Quantified by Direct Bulk Probes of both Anionic and Cationic Redox Reactions

The reversibility and cyclability of anionic redox in battery electrodes hold the key to its practical employments. Here, through mapping of resonant inelastic X-ray scattering (mRIXS), we have independently quantified the evolving redox states of both cations and anions in Na2/3Mg1/3Mn2/3O2. The bulk-Mn redox emerges from initial discharge and is quantified by inverse-partial fluorescence yield (iPFY) from Mn-L mRIXS. Bulk and surface Mn activities likely lead to the voltage fade. O-K super-partial fluorescence yield (sPFY) analysis of mRIXS shows 79% lattice oxygen-redox reversibility during initial cycle, with 87% capacity sustained after 100 cycles. In Li1.17Ni0.21Co0.08Mn0.54O2, lattice-oxygen redox is 76% initial-cycle reversible but with only 44% capacity retention after 500 cycles. These results unambiguously show the high reversibility of lattice-oxygen redox in both Li-ion and Na-ion systems. The contrast between Na2/3Mg1/3Mn2/3O2 and Li1.17Ni0.21Co0.08Mn0.54O2 systems suggests the importance of distinguishing lattice-oxygen redox from other oxygen activities for clarifying its intrinsic properties.

physics.chem-ph↗

arXiv2018

Terahertz Spin Transfer Torque Oscillator Based on a Synthetic Antiferromagnet

Bloch-Bloembergen-Slonczewski equation is adopted to simulate magnetization dynamics in spin-valve based spin-transfer torque oscillator with synthetic antiferromagnet acting as a free magnetic layer. High frequency up to the terahertz scale is predicted in synthetic antiferromagnet spin-transfer torque oscillator with no external magnetic field if the following requirements are fulfilled: antiferromagnetic coupling between synthetic antiferromagnetic layers is sufficiently strong, and the thickness of top (bottom) layer of synthetic antiferromagnet is sufficiently thick (thin) to achieve a wide current density window for the high oscillation frequency. Additionally, the transverse relaxation time of the free magnetic layer should be sufficiently larger compared with the longitudinal relaxation time. Otherwise, stable oscillation cannot be sustained or scenarios similar to regular spin valve-based spin-transfer torque oscillator with relatively low frequency will occur. Our calculations pave a new way for exploring THz spintronics devices.

physics.app-ph↗

arXiv2016

Who pumps spin current into nonmagnetic-metal (NM) layer in YIG/NM multilayers at ferromagnetic resonance?

Spin pumping in Yttrium-iron-garnet (YIG)/nonmagnetic-metal (NM) layer systems under ferromagnetic resonance (FMR) conditions is a popular method of generating spin current in the NM layer. A good understanding of the spin current source is essential in extracting spin Hall angle of the NM and in potential spintronics applications. It is widely believed that spin current is pumped from precessing YIG magnetization into NM layer. Here, by combining microwave absorption and DC-voltage measurements on YIG/Pt and YIG/NM1/NM2 (NM1=Cu or Al, NM2=Pt or Ta), we unambiguously showed that spin current in NM came from the magnetized NM surface (in contact with YIG) due to the magnetic proximity effect (MPE), rather than the precessing YIG magnetization. This conclusion is reached through our unique detecting method where the FMR microwave absorption of the magnetized NM surface, hardly observed in the conventional FMR experiments, was greatly amplified when the electrical detection circuit was switched on.

cond-mat.mtrl-sci↗

arXiv2015

Strong enhancement of critical current density in both low & high fields and flux pinning mechanism under hydrostatic pressure in optimally doped (Ba,K)Fe2As2 single crystals

Strong pinning depends on the pinning force strength and number density of effective defects. Using hydrostatic pressure method, we demonstrate that hydrostatic pressure up to 1.2 GPa can significantly enhance flux pinning or Jc by a factor of up to 5 especially in both low and high fields in optimally doped Ba0.6K0.4Fe2As2 crystals. Our analysis on the flux pining mechanism indicate that both pinning centre number density (Np) and pinning force (Fp) are greatly increased by the pressure and contribute to strong pinning.

cond-mat.supr-con↗

arXiv2015

Evidence for Half-Metallicity in n-type HgCr2Se4

High quality HgCr$_2$Se$_4$ single crystals have been investigated by magnetization, electron transport and Andreev reflection spectroscopy. In the ferromagnetic ground state, the saturation magnetic moment of each unit cell corresponds to an integer number of electron spins (3 $μ_B$/Cr$^{3+}$), and the Hall effect measurements suggest n-type charge carriers. Spin polarizations as high as $97\%$ were obtained from fits of the differential conductance spectra of HgCr$_2$Se$_4$/Pb junctions with the modified Blonder-Tinkham-Klapwijk (BTK) theory. The temperature and bias-voltage dependencies of the sub-gap conductance are consistent with recent theoretical calculations based on spin active scatterings at a superconductor/half metal interface. Our results suggest that n-HgCr$_2$Se$_4$ is a half metal, in agreement with theoretical calculations that also predict undoped HgCr$_2$Se$_4$ is a magnetic Weyl semimetal.

cond-mat.mes-hall↗

arXiv2015

Disorder Enhanced Nuclear Spin Relaxation at Landau Level Filling Factor One

The nuclear spin relaxation rate (1/$T_1$) is measured for GaAs two-dimensional electron systems in the quantum Hall regime with an all-electrical technique for agitating and probing the nuclear spins. A "tilted plateau" feature is observed near the Landau level filling factor $ν=1$ in 1/$T_1$ versus $ν$. Both width and magnitude of the plateau increase with decreasing electron density. At low temperatures, 1/$T_1$ exhibits an Arrhenius temperature dependence within the tilted plateau regime. The extracted energy gaps are up to two orders of magnitude smaller than the corresponding charge transport gaps. These results point to a nontrivial mechanism for the disorder enhanced nuclear spin relaxation, in which microscopic inhomogeneities play a key role for the low energy spin excitations related to skyrmions.

cond-mat.mes-hall↗