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arXiv · 1902.03005

Enhanced Interfacial Dzyaloshinskii-Moriya Interaction in annealed Pt/Co/MgO structures

Anni Cao·Runze Chen·Xueying Zhang·Xinran Wang·Shiyang Lu·Shishen Yan·Bert Koopmans·Weisheng Zhao
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Abstract

The interfacial Dzyaloshinskii-Moriya interaction (iDMI) is attracting great interests for spintronics. An iDMI constant larger than 3 mJ/m^2 is expected to minimize the size of skyrmions and to optimize the DW dynamics. In this study, we experimentally demonstrate an enhanced iDMI in Pt/Co/X/MgO ultra-thin film structures with perpendicular magnetization. The iDMI constants were measured using a field-driven creep regime domain expansion method. The enhancement of iDMI with an atomically thin insertion of Ta and Mg is comprehensively understood with the help of ab-initio calculations. Thermal annealing has been used to crystallize the MgO thin layer for improving tunneling magneto-resistance (TMR), but interestingly it also provides a further increase of the iDMI constant. An increase of the iDMI constant up to 3.3 mJ/m^2 is shown, which could be promising for the scaling down of skyrmion electronics.

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Anni Cao, Runze Chen, Xueying Zhang, Xinran Wang, Shiyang Lu, Shishen Yan, Bert Koopmans, Weisheng Zhao. 2019-02-08. Enhanced Interfacial Dzyaloshinskii-Moriya Interaction in annealed Pt/Co/MgO structures. https://doi.org/10.1088/1361-6528/ab62cd

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