SearcharxivSearch

arXiv subjects

Shisheng Li

Publications and source records attributed to Shisheng Li.

17 recordsLinked to original sources

Asymptotics of the Tchoukaillon array and a conjecture of Beluhov

The Tchoukaillon array is an infinite array of the positive integers, arising from a one-row Mancala solitaire, in which each positive integer occurs exactly once. Its zeroth column is the Flavius Josephus sieve and its zeroth row is the sequence of Tchoukaillon numbers; the asymptotics of these two edges are classical results of Andersson and of Broline and Loeb. On the basis of numerical evidence, N. Beluhov conjectured (as relayed by Knuth) that the general entry $T_{i,j}$ satisfies $T_{i,j} \approx (πi+2j)^2/(4π)$ as $i,j \to \infty$. We prove this conjecture. In fact we establish the stronger uniform estimate $T_{i,j} = (πi+2j+2)^2/(4π) + O((i+j+1)^{4/3})$, in which both constants $π$ and $2$ are produced by the array's own recursion through a Wallis product, independently of the two edge theorems. Equivalently, the square root of the entry is asymptotically linear, $\sqrt{T_{i,j}} = (\sqrtπ/2)\, i + (1/\sqrtπ)(j+1) + O((i+j+1)^{1/3})$, the linear blend of the two edge growth-rates. As corollaries we obtain that the level regions $\{T_{i,j} \le V\}$ are triangles up to a boundary of width $O(V^{1/6})$, and an $O(\sqrt{M})$ algorithm that locates the row and column of a given integer $M$.

math.CO

Every natural number is a sum of distinct semiprime unit fractions

We prove that every natural number is a finite sum of distinct unit fractions whose denominators are semiprimes (products of two distinct primes). This is the $ω=2$ integer case of a problem of Erdős and Graham, stated only as a conjecture by Butler, Erdős and Graham (Integers 15 (2015), A51), who proved the $ω=3$ analogue. Counterintuitively the problem hardens as $ω$ decreases -- the induction's feed thins -- so $ω=2$ is the hard case; our proof adapts the Butler-Erdős-Graham induction to this thin-feed regime, where the entire content of the induction step reduces to an explicit onset inequality $Y_0(N)\le\min\{β(N),β'(N)\}$, proved for all $N\ge10$ by Olson's addition theorem and elementary Chebyshev bounds above a finite, machine-checked base range. The same engine extends to the rationals: for every squarefree $b$, every $a/b$ above an explicit threshold $\min\{B_{N_b}/6,\,1/5\}$ is $ω=2$ representable, unconditionally. As an application we give the first complete proof of the rational $ω=3$ statement -- every $a/b$ with squarefree $b$ is a sum of distinct sphenic unit fractions -- that Butler, Erdős and Graham conjectured but left unpublished; a descent settles every $ω\ge3$. What remains open is the $ω=2$ regime below this threshold, which we reduce to a single explicit conjecture -- that the gap-free floor of a semiprime subset-sum set tends to zero. This work is a human-AI collaboration: AI tools (notably Anthropic's Claude, used through Claude Code) contributed substantially to the Lean formalisation, the experiments, and the writing; correspondingly, every result is machine-checked in Lean 4 / Mathlib (no sorry; two cited classical axioms, plus the native_decide compiler-trust base for the finite computations), so its correctness is independent of the tools used.

math.NT

Nonexistence of Whirling-Knight Tours at Half Coil Count for $n \equiv 4, 6 \pmod 8$

A whirling knight's tour is a Hamiltonian cycle in the digraph of counter-clockwise knight steps about the centre of an $n \times n$ board; its coil count $c$ is the winding number around the centre. We prove that no such tour with $c = n/2$ exists when $n \equiv 4 \pmod 8$ ($n \ge 4$) or $n \equiv 6 \pmod 8$ ($n \ge 6$), settling a conjecture of Beluhov. For each residue class we exhibit a closed-form Farkas certificate for infeasibility of a cycle-cover LP relaxation; the two certificates are structurally distinct.

math.CO

$\mathit{SB}(3,n)$ has no Hamiltonian cycle when $n$ is even: a sign-of-permutation proof, with extension to all odd $m\equiv 3\pmod 4$

We resolve exercise 7.2.2.4--224 of Knuth's Pre-Fascicle 8a (10 April 2026 draft, rated [46]): the digraph $\mathit{SB}(3,n)$ has no Hamiltonian cycle when $n$ is even. The argument is a sign-of-permutation obstruction. Writing the successor map of a candidate Hamiltonian cycle as $f_S = A_b \circ σ$, $\operatorname{sgn}(A_b)=+1$ when $m$ is odd, so $\operatorname{sgn}(f_S)=\operatorname{sgn}(σ)$ for every choice set $S$. A short dihedral Burnside computation shows $\operatorname{sgn}(σ)=-1$ on $Σ_3^n$ for even $n$, contradicting the sign $+1$ required of a single $3^n$-cycle. The same argument gives the stronger statement that $\mathit{SB}(m,n)$ has no Hamiltonian cycle whenever $m$ is odd with $m\equiv 3\pmod 4$ and $n$ is even; this restricts the residue classes in which Knuth's hint to Ex.~225 (existence of Hamiltonian cycles in $\mathit{SB}(m,n)$ for all $m>3$ and $n>2$) can hold.

math.CO

A note on the parameter $\ell$ in Buchbinder--Feldman's deterministic submodular matroid algorithm

Buchbinder and Feldman recently gave a deterministic $(1-1/e-\varepsilon)$-approximation for maximizing a non-negative monotone submodular function subject to a matroid constraint, with query complexity $\widetilde{O}_\varepsilon(nr)$. Their algorithm uses an integer parameter $\ell$, which Buchbinder and Feldman fix to $\ell = 1 + \lceil 1/\varepsilon \rceil$ via a loose bound on $(1+1/\ell)^{-\ell}$. We point out two purely elementary refinements. First, the classical Pólya--Szegő inequality $(1+1/\ell)^{-\ell} \le e^{-1}(1+1/(2\ell))$ replaces the loose step in their proof and permits $\ell = \lceil 1/(2e\varepsilon) \rceil$, shrinking the hidden constant in $\widetilde{O}_\varepsilon(nr)$ by a factor $\approx 2^{0.816/\varepsilon}$. Second, an alternating-series tail bound for $\log(1+t)$ yields the asymptotically sharp inequality $(1+1/\ell)^{-\ell} \le e^{-1}\exp(1/(2\ell) - 1/(3\ell^2) + 1/(4\ell^3))$, matching the true expansion of $(1+1/\ell)^{-\ell}$ through order $\ell^{-3}$ and translating into $\ell_\star = 1/(2e\varepsilon) - 5/12 + O(\varepsilon)$. The asymptotic class $\widetilde{O}_\varepsilon(nr)$ of the query complexity is unchanged in either case; only the implicit constant in $\varepsilon$ is improved. All inequalities in this note are formalized and machine-checked in Lean 4 against Mathlib.

cs.DS

One-Dimensional Crystallographic Etching of Few-Layer WS$_2$

Layer number-dependent band structures and symmetry are vital for the electrical and optical characteristics of two-dimensional (2D) transition metal dichalcogenides (TMDCs). Harvesting 2D TMDCs with tunable thickness and properties can be achieved through top-down etching and bottom-up growth strategies. In this study, we report a pioneering technique that utilizes the migration of in-situ generated Na-W-S-O droplets to etch out one-dimensional (1D) nanotrenches in few-layer WS$_2$. 1D WS$_2$ nanotrenches were successfully fabricated on the optically inert bilayer WS$_2$, showing pronounced photoluminescence and second harmonic generation signals. Additionally, we demonstrate the modulation of inkjet-printed Na$_2$WO$_4$-Na$_2$SO$_4$ particles to switch between the etching and growth modes by manipulating the sulfur supply. This versatile approach enables the creation of 1D nanochannels on 2D TMDCs. Our research presents exciting prospects for the top-down and bottom-up fabrication of 1D-2D mixed-dimensional TMDC nanostructures, expanding their use for photonic and optoelectronic applications.

physics.app-ph

Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes

In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion.

cond-mat.mtrl-sci

Probing Electronic States in Monolayer Semiconductors through Static and Transient Third-Harmonic Spectroscopy

Electronic states and their dynamics are of critical importance for electronic and optoelectronic applications. Here, we probe various relevant electronic states in monolayer MoS2, such as multiple excitonic Rydberg states and free-particle energy bands, with a high relative contrast of up to >200 via broadband (from ~1.79 to 3.10 eV) static third-harmonic spectroscopy, which is further supported by theoretical calculations. Moreover, we introduce transient third-harmonic spectroscopy to demonstrate that third-harmonic generation can be all-optically modulated with a modulation depth exceeding ~94% at ~2.18 eV, providing direct evidence of dominant carrier relaxation processes, associated with carrier-exciton and carrier-phonon interactions. Our results indicate that static and transient third-harmonic spectroscopies are not only promising techniques for the characterization of monolayer semiconductors and their heterostructures, but also a potential platform for disruptive photonic and optoelectronic applications, including all-optical modulation and imaging.

physics.optics

Mixed-Salt Enhanced Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides

The usage of molten salts, e.g., Na2MoO4 and Na2WO4, has shown great success in the growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). In comparison with the halide salt (i.e., NaCl, NaBr, KI)-assisted growth (Salt 1.0), the molten salt-assisted vapor-liquid-solid (VLS) growth technique (Salt 2.0) has improved the reproducibility, efficiency and scalability of synthesizing 2D TMDCs. However, the growth of large-area MoSe2 and WTe2 is still quite challenging with the use Salt 2.0 technique. In this study, a renewed Salt 2.0 technique using mixed salts (e.g., Na2MoO4-Na2SeO3 and Na2WO4-Na2TeO3) is developed for the enhanced CVD growth of 2D MoSe2 and WTe2 crystals with large grain size and yield. Continuous monolayer MoSe2 film with grain size of 100-250 μm or isolated flakes up to ~ 450 μm is grown on a halved 2-inch SiO2/Si wafer. Our study further confirms the synergistic effect of Na+ and SeO32- in the enhanced CVD growth of wafer-scale monolayer MoSe2 film. And thus, the addition of Na2SeO3 and Na2TeO3 into the transition metal salts could be a general strategy for the enhanced CVD growth of many other 2D selenides and tellurides.

cond-mat.mtrl-sci

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) with unique electrical properties are fascinating materials used for future electronics. However, the strong Fermi level pinning effect at the interface of TMDCs and metal electrodes always leads to high contact resistance, which seriously hinders their application in 2D electronics. One effective way to overcome this is to use metallic TMDCs or transferred metal electrodes as van der Waals (vdW) contacts. Alternatively, using highly conductive doped TMDCs will have a profound impact on the contact engineering of 2D electronics. Here, a novel chemical vapor deposition using mixed molten salts is established for vapor-liquid-solid growth of high-quality rhenium (Re) and vanadium (V)-doped TMDC monolayers with high controllability and reproducibility. A tunable semiconductor to metal transition is observed in the Re and V-doped TMDCs. Electrical conductivity increases up to a factor of 108 in the degenerate V-doped WS2 and WSe2. Using V-doped WSe2 as vdW contact, the on-state current and on/off ratio of WSe2-based field-effect transistors have been substantially improved (from ~10-8 to 10-5 A; ~104 to 108), compared to metal contacts. Future studies on lateral contacts and interconnects using doped TMDCs will pave the way for 2D integrated circuits and flexible electronics.

cond-mat.mtrl-sci

Structure, preparation, and applications of 2D material-based metal-semiconductor heterostructures

Two-dimensional (2D) materials family with its many members and different properties has recently drawn great attention. Thanks to their atomic thickness and smooth surface, 2D materials can be constructed into heterostructures or homostructures in the fashion of out-of-plane perpendicular stacking or in-plane lateral stitching, resulting in unexpected physical and chemical properties and applications in many areas. In particular, 2D metal-semiconductor heterostructures or homostructures (MSHSs) which integrate 2D metals and 2D semiconductors, have shown great promise in future integrated electronics and energy-related applications. In this review, MSHSs with different structures and dimensionalities are first introduced, followed by several ways to prepare them. Their applications in electronics and optoelectronics, energy storage and conversion, and their use as platforms to exploit new physics are then discussed. Finally, we give our perspectives about the challenges and future research directions in this emerging field.

physics.app-ph

Does the metallic 1T phase WS2 really exist?

The electronic and optical properties of transition metal dichalcogenides (TMDCs) in distinctive phases, such as 1H, 1T, and 1T' phases, are of fundamental importance for variety of applications. The 1H phase has been understood as a direct bandgap semiconductor. On the other hand, the electronic properties of the 1T and 1T' phases remain controversy in the theoretical and experimental perspectives. In this study, we explore the optical properties of monolayer WS2 in 1H, 1T, and 1T' phases using Raman and photoluminescence, corroborated with the atomic structure identified by scanning transmission electron microscopy. Despite of earlier theoretical investigations which all predict the metallic 1T phase, we experimentally discovered that the 1T-phase WS2 is a direct band gap semiconductor and optically indistinguishable from the 1H phase. In a sharp contrast, the 1T'-phase WS2 shows a gapless nature in its bandstructure with the quenched exciton transition as expected. Our experimental findings may give an interesting twist on the existing literatures reporting the metallic nature of 1T phase because the 1T phase has a strong tendency to co-exist with the metallic 1T' phase.

cond-mat.mtrl-sci

Wafer-Scale and Deterministic Patterned Growth of Monolayer MoS2 via Vapor-Liquid-Solid Method

Vapor transportation is the core process in growing transition-metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). One inevitable problem is the spatial inhomogeneity of the vapors. The non-stoichiometric supply of transition-metal precursors and chalcogen leads to poor control in products' location, morphology, crystallinity, uniformity and batch to batch reproducibility. While vapor-liquid-solid (VLS) growth involves molten precursors at the growth temperatures higher than their melting points. The liquid sodium molybdate can precipitate solid MoS2 monolayers when saturated with sulfur vapor. Taking advantage of the VLS growth, we achieved three kinds of important achievements: (a) 4-inch-wafer-scale uniform growth of MoS2 flakes on SiO2/Si substrates, (b) 2-inch-wafer-scale growth of continuous MoS2 film with a grain size exceeding 100 um on sapphire substrates, and (c) pattern (site-controlled) growth of MoS2 flakes and film. We clarified that the VLS growth thus pave the new way for the high-efficient, scalable synthesis of two-dimensional TMDC monolayers.

cond-mat.mtrl-sci

Vapor-Liquid-Solid Growth of Monolayer MoS2 Nanoribbons

Chemical vapor deposition (CVD) of two-dimensional (2D) materials such as monolayer MoS2 typically involves the conversion of vapor-phase precursors to a solid product in a process that may be described as a vapor-solid-solid (VSS) mode. Here, we report the first demonstration of vapor-liquid-solid (VLS) growth of monolayer MoS2 yielding highly crystalline ribbon-shaped structures with a width of a few tens of nanometers to a few micrometers. The VLS growth mode is triggered by the reaction between molybdenum oxide and sodium chloride, which results in the formation of molten Na-Mo-O droplets. These droplets mediate the growth of MoS2 ribbons in the "crawling mode" when saturated with sulfur on a crystalline substrate. Our growth yields straight and kinked ribbons with a locally well-defined orientation, reflecting the regular horizontal motion of the liquid droplets during growth. Using atomic-resolution scanning transmission electron microscopy (STEM) and second harmonic generation (SHG) microscopy, we show that the ribbons are homoepitaxially on monolayer MoS2 surface with predominantly 2H- or 3R-type stacking. These findings pave the way to novel devices with structures of mixed dimensionalities.

cond-mat.mtrl-sci

Topological Weyl phase transition in Mo$_x$W$_{1-x}$Te$_2$

Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginzburg-Landau paradigm but are instead associated with changes in bulk topological invariants and associated topological surface states. In the case of a Weyl semimetal this phase transition is particularly unusual because it involves the creation of bulk chiral charges and the nucleation of topological Fermi arcs. Here we image a topological phase transition to a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ with changing composition $x$. Using pump-probe ultrafast angle-resolved photoemission spectroscopy (pump-probe ARPES), we directly observe the nucleation of a topological Fermi arc at $x_c \sim 7\%$, showing the critical point of a topological Weyl phase transition. For Mo dopings $x < x_c$, we observe no Fermi arc, while for $x > x_c$, the Fermi arc gradually extends as the bulk Weyl points separate. Our results demonstrate for the first time the creation of magnetic monopoles in momentum space. Our work opens the way to manipulating chiral charge and topological Fermi arcs in Weyl semimetals for transport experiments and device applications.

cond-mat.mtrl-sci

Discovery of a new type of topological Weyl fermion semimetal state in Mo$_x$W$_{1-x}$Te$_2$

The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in TaAs it has proven challenging to study the rich transport phenomena arising from emergent Weyl fermions. The series Mo$_x$W$_{1-x}$Te$_2$ are inversion-breaking, layered, tunable semimetals already under study as a promising platform for new electronics and recently proposed to host Type II, or strongly Lorentz-violating, Weyl fermions. Here we report the discovery of a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ at $x = 25\%$. We use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe a topological Fermi arc above the Fermi level, demonstrating a Weyl semimetal. The excellent agreement with calculation suggests that Mo$_x$W$_{1-x}$Te$_2$ is the first Type II Weyl semimetal. We also find that certain Weyl points are at the Fermi level, making Mo$_x$W$_{1-x}$Te$_2$ a promising platform for transport and optics experiments on Weyl semimetals.

cond-mat.mtrl-sci

Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals

Chemical vapor deposition (CVD) of two-dimensional (2D) tungsten dichalcogenide crystals requires steady flow of tungsten source in the vapor phase. This often requires high temperature and low pressure due to the high sublimation point of tungsten oxide precursors. We demonstrate atmospheric pressure CVD of WSe2 and WS2 monolayers at moderate temperatures (700 ~ 850 oC) using alkali metal halides (MX where M= Na or K and X=Cl, Br or I) as the growth promoters. We attribute the facilitated growth to the formation of volatile tungsten oxyhalide species during growth, which leads to efficient delivery of the precursor to the growth substrates. The monolayer crystals were found to be free of unintentional doping with alkali metal and halogen atoms. Good field-effect transistor (FET) performances with high current on/off ratio ~10 7, hole and electron mobilities up to 102 and 26 cm2 V 1 s-1 for WSe2 and electron mobility of ~14 cm2 V-1 s-1 for WS2 devices were achieved.

cond-mat.mtrl-sci