Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes

Hong Kuan Ng; Du Xiang; Ady Suwardi; Guangwei Hu; Ke Yang; Yunshan Zhao; Tao Liu; Zhonghan Cao; Huajun Liu; Shisheng Li; Jing Cao; Qiang Zhu; Zhaogang Dong; Chee Kiang Ivan Tan; Dongzhi Chi; Cheng-Wei Qiu; Kedar Hippalgaonkar; Goki Eda; Ming Yang; Jing Wu

arXiv · 2307.07787

Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes

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Abstract

In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion.

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Hong Kuan Ng, Du Xiang, Ady Suwardi, Guangwei Hu, Ke Yang, Yunshan Zhao, Tao Liu, Zhonghan Cao, Huajun Liu, Shisheng Li, Jing Cao, Qiang Zhu, Zhaogang Dong, Chee Kiang Ivan Tan, Dongzhi Chi, Cheng-Wei Qiu, Kedar Hippalgaonkar, Goki Eda, Ming Yang, Jing Wu. 2023-07-15. Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes. https://arxiv.org/abs/2307.07787

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